CN102110657A - 双位快闪存储器的制作方法 - Google Patents
双位快闪存储器的制作方法 Download PDFInfo
- Publication number
- CN102110657A CN102110657A CN2009102474938A CN200910247493A CN102110657A CN 102110657 A CN102110657 A CN 102110657A CN 2009102474938 A CN2009102474938 A CN 2009102474938A CN 200910247493 A CN200910247493 A CN 200910247493A CN 102110657 A CN102110657 A CN 102110657A
- Authority
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- China
- Prior art keywords
- dielectric layer
- gate dielectric
- flash memory
- etching
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 230000015654 memory Effects 0.000 title abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 238000005530 etching Methods 0.000 claims abstract description 48
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910000449 hafnium oxide Inorganic materials 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 230000035484 reaction time Effects 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 16
- 238000001259 photo etching Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 229910001439 antimony ion Inorganic materials 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- IUBCUJZHRZSKDG-UHFFFAOYSA-N C(C)N(C)[Hf] Chemical compound C(C)N(C)[Hf] IUBCUJZHRZSKDG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009102474938A CN102110657A (zh) | 2009-12-29 | 2009-12-29 | 双位快闪存储器的制作方法 |
US12/978,346 US20110156123A1 (en) | 2009-12-29 | 2010-12-23 | Method for manufacturing twin bit structure cell with hafnium oxide layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009102474938A CN102110657A (zh) | 2009-12-29 | 2009-12-29 | 双位快闪存储器的制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102110657A true CN102110657A (zh) | 2011-06-29 |
Family
ID=44174771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102474938A Pending CN102110657A (zh) | 2009-12-29 | 2009-12-29 | 双位快闪存储器的制作方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20110156123A1 (zh) |
CN (1) | CN102110657A (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2695966B1 (en) | 2012-08-06 | 2018-10-03 | IMEC vzw | ALD method |
US8803223B2 (en) | 2012-09-11 | 2014-08-12 | Macronix International Co., Ltd. | SONOS device and method for fabricating the same |
US8501566B1 (en) * | 2012-09-11 | 2013-08-06 | Nanya Technology Corp. | Method for fabricating a recessed channel access transistor device |
US10395941B1 (en) * | 2018-08-21 | 2019-08-27 | Globalfoundries Inc. | SADP method with mandrel undercut spacer portion for mandrel space dimension control |
CN110620115B (zh) * | 2019-05-23 | 2022-03-18 | 上海华力集成电路制造有限公司 | 1.5t sonos闪存的制造方法 |
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US759368A (en) * | 1903-08-18 | 1904-05-10 | Nels Halverson | Vehicle-spring. |
JP3555200B2 (ja) * | 1994-11-08 | 2004-08-18 | 日産自動車株式会社 | アンチスキッド制御装置 |
US5658822A (en) * | 1996-03-29 | 1997-08-19 | Vanguard International Semiconductor Corporation | Locos method with double polysilicon/silicon nitride spacer |
US5918124A (en) * | 1997-10-06 | 1999-06-29 | Vanguard International Semiconductor Corporation | Fabrication process for a novel multi-storage EEPROM cell |
JP4293385B2 (ja) * | 1998-01-27 | 2009-07-08 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
US6040605A (en) * | 1998-01-28 | 2000-03-21 | Hitachi, Ltd. | Semiconductor memory device |
US6187659B1 (en) * | 1999-08-06 | 2001-02-13 | Taiwan Semiconductor Manufacturing Company | Node process integration technology to improve data retention for logic based embedded dram |
US6538292B2 (en) * | 2001-03-29 | 2003-03-25 | Macronix International Co. Ltd. | Twin bit cell flash memory device |
US6521949B2 (en) * | 2001-05-03 | 2003-02-18 | International Business Machines Corporation | SOI transistor with polysilicon seed |
US7012297B2 (en) * | 2001-08-30 | 2006-03-14 | Micron Technology, Inc. | Scalable flash/NV structures and devices with extended endurance |
US6700771B2 (en) * | 2001-08-30 | 2004-03-02 | Micron Technology, Inc. | Decoupling capacitor for high frequency noise immunity |
US6816517B2 (en) * | 2001-09-25 | 2004-11-09 | International Business Machines Corporation | Micro-electromechanical devices for wavelength tunable lasers |
US6884734B2 (en) * | 2001-11-20 | 2005-04-26 | International Business Machines Corporation | Vapor phase etch trim structure with top etch blocking layer |
US6639271B1 (en) * | 2001-12-20 | 2003-10-28 | Advanced Micro Devices, Inc. | Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same |
KR100493022B1 (ko) * | 2002-07-10 | 2005-06-07 | 삼성전자주식회사 | Sonos 구조를 갖는 불휘발성 메모리 소자의 제조 방법 |
US6806517B2 (en) * | 2003-03-17 | 2004-10-19 | Samsung Electronics Co., Ltd. | Flash memory having local SONOS structure using notched gate and manufacturing method thereof |
US7329914B2 (en) * | 2004-07-01 | 2008-02-12 | Macronix International Co., Ltd. | Charge trapping memory device with two separated non-conductive charge trapping inserts and method for making the same |
US20060046403A1 (en) * | 2004-08-31 | 2006-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming separated charge-holding regions in a semiconductor device |
US7132337B2 (en) * | 2004-12-20 | 2006-11-07 | Infineon Technologies Ag | Charge-trapping memory device and method of production |
GB0517195D0 (en) * | 2005-08-23 | 2005-09-28 | Cambridge Display Tech Ltd | Molecular electronic device structures and fabrication methods |
KR100665230B1 (ko) * | 2005-10-24 | 2007-01-09 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조 방법 |
TWI287868B (en) * | 2005-11-17 | 2007-10-01 | Ememory Technology Inc | Single-poly non-volatile memory device |
US7482236B2 (en) * | 2006-01-06 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a sidewall SONOS memory device |
US20080061359A1 (en) * | 2006-02-04 | 2008-03-13 | Chungho Lee | Dual charge storage node with undercut gate oxide for deep sub-micron memory cell |
US7521317B2 (en) * | 2006-03-15 | 2009-04-21 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device and structure thereof |
US7432156B1 (en) * | 2006-04-20 | 2008-10-07 | Spansion Llc | Memory device and methods for its fabrication |
US7915123B1 (en) * | 2006-04-20 | 2011-03-29 | Spansion Llc | Dual charge storage node memory device and methods for fabricating such device |
US7732281B1 (en) * | 2006-04-24 | 2010-06-08 | Spansion Llc | Methods for fabricating dual bit flash memory devices |
JP2008028249A (ja) * | 2006-07-24 | 2008-02-07 | Matsushita Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
US7518912B2 (en) * | 2006-08-25 | 2009-04-14 | Powerchip Semiconductor Corp. | Multi-level non-volatile memory |
CN100576472C (zh) * | 2006-12-12 | 2009-12-30 | 中芯国际集成电路制造(上海)有限公司 | 具有非晶硅monos存储单元结构的半导体器件及其制造方法 |
US7666739B2 (en) * | 2006-12-20 | 2010-02-23 | Spansion Llc | Methods for fabricating a split charge storage node semiconductor memory |
US7579238B2 (en) * | 2007-01-29 | 2009-08-25 | Freescale Semiconductor, Inc. | Method of forming a multi-bit nonvolatile memory device |
KR100877100B1 (ko) * | 2007-04-16 | 2009-01-09 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 제조 방법 |
KR100906014B1 (ko) * | 2007-06-11 | 2009-07-06 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
JP5425378B2 (ja) * | 2007-07-30 | 2014-02-26 | スパンション エルエルシー | 半導体装置の製造方法 |
TW200913162A (en) * | 2007-09-11 | 2009-03-16 | Univ Nat Chiao Tung | Nonvolatile memory device with nanowire channel and a method for fabricating the same |
CN101996951B (zh) * | 2009-08-20 | 2013-09-11 | 中芯国际集成电路制造(上海)有限公司 | 非易失性存储器结构及其形成方法 |
-
2009
- 2009-12-29 CN CN2009102474938A patent/CN102110657A/zh active Pending
-
2010
- 2010-12-23 US US12/978,346 patent/US20110156123A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US20110156123A1 (en) | 2011-06-30 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121120 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121120 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110629 |