CN101996951B - 非易失性存储器结构及其形成方法 - Google Patents
非易失性存储器结构及其形成方法 Download PDFInfo
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- CN101996951B CN101996951B CN2009100567285A CN200910056728A CN101996951B CN 101996951 B CN101996951 B CN 101996951B CN 2009100567285 A CN2009100567285 A CN 2009100567285A CN 200910056728 A CN200910056728 A CN 200910056728A CN 101996951 B CN101996951 B CN 101996951B
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- alumina
- polysilicon gate
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- 238000000034 method Methods 0.000 title claims abstract description 63
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000002210 silicon-based material Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 7
- 238000010276 construction Methods 0.000 claims description 50
- 229920005591 polysilicon Polymers 0.000 claims description 42
- 239000002159 nanocrystal Substances 0.000 claims description 23
- 238000005516 engineering process Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 230000002146 bilateral effect Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000001413 cellular effect Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- HIXXWWAPSBAUHL-CQSZACIVSA-N (2S)-2-amino-3-(1H-indol-3-yl)-2,3-dimethylbutanoic acid Chemical compound CC([C@](N)(C(=O)O)C)(C1=CNC2=CC=CC=C12)C HIXXWWAPSBAUHL-CQSZACIVSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PICXIOQBANWBIZ-UHFFFAOYSA-N zinc;1-oxidopyridine-2-thione Chemical class [Zn+2].[O-]N1C=CC=CC1=S.[O-]N1C=CC=CC1=S PICXIOQBANWBIZ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
Abstract
Description
Claims (18)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100567285A CN101996951B (zh) | 2009-08-20 | 2009-08-20 | 非易失性存储器结构及其形成方法 |
US12/704,502 US8114732B2 (en) | 2009-08-20 | 2010-02-11 | Method for manufacturing twin bit structure cell with Al2O3/nano-crystalline Si layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100567285A CN101996951B (zh) | 2009-08-20 | 2009-08-20 | 非易失性存储器结构及其形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101996951A CN101996951A (zh) | 2011-03-30 |
CN101996951B true CN101996951B (zh) | 2013-09-11 |
Family
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CN2009100567285A Expired - Fee Related CN101996951B (zh) | 2009-08-20 | 2009-08-20 | 非易失性存储器结构及其形成方法 |
Country Status (2)
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US (1) | US8114732B2 (zh) |
CN (1) | CN101996951B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097383B (zh) * | 2009-12-15 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102097385B (zh) * | 2009-12-15 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102097490A (zh) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102110658B (zh) * | 2009-12-29 | 2013-07-17 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
CN102110657A (zh) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | 双位快闪存储器的制作方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661592A (en) * | 1995-06-07 | 1997-08-26 | Silicon Light Machines | Method of making and an apparatus for a flat diffraction grating light valve |
US5918124A (en) | 1997-10-06 | 1999-06-29 | Vanguard International Semiconductor Corporation | Fabrication process for a novel multi-storage EEPROM cell |
JP4293385B2 (ja) * | 1998-01-27 | 2009-07-08 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
US7012297B2 (en) * | 2001-08-30 | 2006-03-14 | Micron Technology, Inc. | Scalable flash/NV structures and devices with extended endurance |
US6700771B2 (en) * | 2001-08-30 | 2004-03-02 | Micron Technology, Inc. | Decoupling capacitor for high frequency noise immunity |
US6884734B2 (en) * | 2001-11-20 | 2005-04-26 | International Business Machines Corporation | Vapor phase etch trim structure with top etch blocking layer |
US6639271B1 (en) * | 2001-12-20 | 2003-10-28 | Advanced Micro Devices, Inc. | Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same |
CN100505268C (zh) * | 2005-03-21 | 2009-06-24 | 旺宏电子股份有限公司 | 存储装置以及访问存储器单元的方法 |
GB0517195D0 (en) * | 2005-08-23 | 2005-09-28 | Cambridge Display Tech Ltd | Molecular electronic device structures and fabrication methods |
US20080061359A1 (en) * | 2006-02-04 | 2008-03-13 | Chungho Lee | Dual charge storage node with undercut gate oxide for deep sub-micron memory cell |
JP2008028249A (ja) | 2006-07-24 | 2008-02-07 | Matsushita Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
US7518912B2 (en) | 2006-08-25 | 2009-04-14 | Powerchip Semiconductor Corp. | Multi-level non-volatile memory |
US7666739B2 (en) * | 2006-12-20 | 2010-02-23 | Spansion Llc | Methods for fabricating a split charge storage node semiconductor memory |
KR100877100B1 (ko) | 2007-04-16 | 2009-01-09 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 제조 방법 |
TW200913162A (en) * | 2007-09-11 | 2009-03-16 | Univ Nat Chiao Tung | Nonvolatile memory device with nanowire channel and a method for fabricating the same |
-
2009
- 2009-08-20 CN CN2009100567285A patent/CN101996951B/zh not_active Expired - Fee Related
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2010
- 2010-02-11 US US12/704,502 patent/US8114732B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8114732B2 (en) | 2012-02-14 |
CN101996951A (zh) | 2011-03-30 |
US20110045649A1 (en) | 2011-02-24 |
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C06 | Publication | ||
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ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121025 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20121025 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C14 | Grant of patent or utility model | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130911 Termination date: 20200820 |
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CF01 | Termination of patent right due to non-payment of annual fee |