KR20030093204A - 유기질 유전체 에칭 중 탄화수소 첨가를 통한마이크로마스킹 제거 - Google Patents
유기질 유전체 에칭 중 탄화수소 첨가를 통한마이크로마스킹 제거 Download PDFInfo
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- KR20030093204A KR20030093204A KR10-2003-7010534A KR20037010534A KR20030093204A KR 20030093204 A KR20030093204 A KR 20030093204A KR 20037010534 A KR20037010534 A KR 20037010534A KR 20030093204 A KR20030093204 A KR 20030093204A
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- 238000005530 etching Methods 0.000 title claims abstract description 66
- 229930195733 hydrocarbon Natural products 0.000 title claims abstract description 37
- 150000002430 hydrocarbons Chemical class 0.000 title claims abstract description 37
- 239000004215 Carbon black (E152) Substances 0.000 title claims abstract description 32
- 239000003989 dielectric material Substances 0.000 title description 4
- 230000008030 elimination Effects 0.000 title 1
- 238000003379 elimination reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000000654 additive Substances 0.000 claims abstract description 23
- 230000000996 additive effect Effects 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 36
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 8
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 abstract description 5
- 239000005977 Ethylene Substances 0.000 abstract description 5
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 102
- 235000012431 wafers Nutrition 0.000 description 45
- 239000000463 material Substances 0.000 description 29
- 239000007789 gas Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000006117 anti-reflective coating Substances 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000003085 diluting agent Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 244000025254 Cannabis sativa Species 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 244000132059 Carica parviflora Species 0.000 description 2
- 235000014653 Carica parviflora Nutrition 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000003039 volatile agent Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010963 scalable process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (18)
- 웨이퍼 유전층의 특징부 에칭 방법으로서,- 반응 챔버 내에 웨이퍼를 배치하고,- 탄화수소 첨가제와 활성 에칭제를 포함하는 에칭제 기체를 반응 챔버 내로 유입시키며,- 상기 에칭제 기체로부터 플라즈마를 상기 반응 챔버 내에 형성하고, 그리고- 상기 유전층 일부에서 특징부를 에칭하는,이상의 단계를 포함하는 것을 특징으로 하는 웨이퍼 유전층의 특징부 에칭 방법.
- 제 1 항에 있어서, 상기 유전층이 하드마스크층 아래에 놓이는 것을 특징으로 하는 방법.
- 제 2 항에 있어서, 상기 탄화수소가 CH4, C2H4, C2H6중에서 선택되는 것을 특징으로 하는 방법.
- 제 3 항에 있어서, 상기 탄화수소가 1 sccm 이상의 유량을 가지는 것을 특징으로 하는 방법.
- 제 4 항에 있어서, 하드마스크 스퍼터링을 감소시키기 위해 상기 탄화수소로부터 폴리머층을 상기 하드마스크층 위에 형성하고 이와 동시에 상기 하드마스크층 위의 폴리머층을 에칭하여 제거하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 5 항에 있어서, 상기 탄화수소가 3 내지 20 sccm의 유량을 가지는 것을 특징으로 하는 방법.
- 제 6 항에 있어서, 상기 하드마스크가 포토레지스트 마스크 아래에 위치하고, 상기 유전층이 유기질 유전층인 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 하드 마스크 에칭을 실행하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 2 항에 있어서, 하드 마스크 에칭을 실행하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 9 항에 있어서, 하드마스크 스퍼터링을 감소시키기 위해 하드마스크층 위에 폴리머층을 형성하고 이와 동시에 에칭하여 제거하는 단계를 추가로 포함하는 것을 특징으로 하는 방법.
- 제 10 항에 있어서, 상기 탄화수소가 1sccm 이상의 유량을 가지는 것을 특징으로 하는 방법.
- 제 11 항에 있어서, 상기 하드마스크가 포토레지스트 마스크 아래에 배치되고, 상기 유전층이 유기질 유전층인 것을 특징으로 하는 방법.
- 제 10 항에 있어서, 상기 하드마스크가 포토레지스트 마스크 아래에 배치되고, 상기 유전층이 유기질 유전층인 것을 특징으로 하는 방법.
- - 반응 챔버 내에 웨이퍼를 배치하고,- 탄화수소 첨가제와 활성 에칭제를 포함하는 에칭제 기체를 반응챔버 내로 유입시키며,- 상기 에칭제 기체로부터 플라즈마를 반응 챔버 내에 형성하고, 그리고- 상기 유전층 일부에서 특징부를 에칭하는이상의 단계를 포함하는 방법에 의해 특징부가 에칭되는, 웨이퍼 상에 한개 이상의 유전층에 형성되는 특징부를 가지는 집적 회로.
- 제 14 항에 있어서, 상기 유전층이 하드마스크 층 아래에 위치하는 것을 특징으로 하는 집적 회로.
- 제 15 항에 있어서, 하드마스크 스퍼터링을 감소시키기 위해, 하드마스크층 위에 폴리머층을 형성함과 동시에 폴리머층을 에칭하여 제거하는 단계를 추가로 포함하는 것을 특징으로 하는 집적 회로.
- 제 16 항에 있어서, 상기 하드마스크가 포토레지스트 마스크 아래에 배치되고, 상기 유전층이 유기질 유전층인 것을 특징으로 하는 집적 회로.
- 제 17 항에 있어서, 하드 마스크 에칭을 실행하는 단계를 추가로 포함하는 것을 특징으로 하는 집적 회로.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/782,437 | 2001-02-12 | ||
US09/782,437 US6620733B2 (en) | 2001-02-12 | 2001-02-12 | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
PCT/US2002/003615 WO2002065530A2 (en) | 2001-02-12 | 2002-02-07 | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
Publications (2)
Publication Number | Publication Date |
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KR20030093204A true KR20030093204A (ko) | 2003-12-06 |
KR100854609B1 KR100854609B1 (ko) | 2008-08-27 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020037010534A KR100854609B1 (ko) | 2001-02-12 | 2002-02-07 | 피쳐 에칭 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6620733B2 (ko) |
KR (1) | KR100854609B1 (ko) |
CN (1) | CN1286153C (ko) |
AU (1) | AU2002247089A1 (ko) |
TW (1) | TW535197B (ko) |
WO (1) | WO2002065530A2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101468249B1 (ko) * | 2007-05-24 | 2014-12-03 | 램 리써치 코포레이션 | 액티브 하드 마스크의 플라즈마 식각 동안 인-시튜 포토레지스트 스트립 |
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2001
- 2001-02-12 US US09/782,437 patent/US6620733B2/en not_active Expired - Lifetime
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2002
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- 2002-02-07 CN CNB028081528A patent/CN1286153C/zh not_active Expired - Fee Related
- 2002-02-07 AU AU2002247089A patent/AU2002247089A1/en not_active Abandoned
- 2002-02-07 KR KR1020037010534A patent/KR100854609B1/ko active IP Right Grant
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KR101468249B1 (ko) * | 2007-05-24 | 2014-12-03 | 램 리써치 코포레이션 | 액티브 하드 마스크의 플라즈마 식각 동안 인-시튜 포토레지스트 스트립 |
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Publication number | Publication date |
---|---|
WO2002065530A3 (en) | 2003-05-15 |
AU2002247089A1 (en) | 2002-08-28 |
WO2002065530B1 (en) | 2003-07-24 |
CN1502119A (zh) | 2004-06-02 |
US6620733B2 (en) | 2003-09-16 |
CN1286153C (zh) | 2006-11-22 |
WO2002065530A2 (en) | 2002-08-22 |
TW535197B (en) | 2003-06-01 |
US20020110992A1 (en) | 2002-08-15 |
KR100854609B1 (ko) | 2008-08-27 |
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