KR20030011067A - 일체로 내장된 플래시 메모리 및 ｓ램 메모리를 갖는이동통신장치 - Google Patents

일체로 내장된 플래시 메모리 및 ｓ램 메모리를 갖는이동통신장치 Download PDF

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Publication number
KR20030011067A
KR20030011067A KR1020027007785A KR20027007785A KR20030011067A KR 20030011067 A KR20030011067 A KR 20030011067A KR 1020027007785 A KR1020027007785 A KR 1020027007785A KR 20027007785 A KR20027007785 A KR 20027007785A KR 20030011067 A KR20030011067 A KR 20030011067A
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KR
South Korea
Prior art keywords
flash
memory
flash memory
macro
macros
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020027007785A
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English (en)
Korean (ko)
Inventor
자산자이
심몬즈스테펜
엘허스세이니자랄
유니콜라스케이
칸사피
Original Assignee
퀄컴 인코포레이티드
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Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20030011067A publication Critical patent/KR20030011067A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Storage Device Security (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020027007785A 1999-12-17 2000-12-14 일체로 내장된 플래시 메모리 및 ｓ램 메모리를 갖는이동통신장치 Withdrawn KR20030011067A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/465,665 1999-12-17
US09/465,665 US6407949B1 (en) 1999-12-17 1999-12-17 Mobile communication device having integrated embedded flash and SRAM memory

Publications (1)

Publication Number Publication Date
KR20030011067A true KR20030011067A (ko) 2003-02-06

Family

ID=23848684

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027007785A Withdrawn KR20030011067A (ko) 1999-12-17 2000-12-14 일체로 내장된 플래시 메모리 및 ｓ램 메모리를 갖는이동통신장치

Country Status (12)

Country Link
US (2) US6407949B1 (enExample)
EP (4) EP1710806B1 (enExample)
JP (5) JP4795598B2 (enExample)
KR (1) KR20030011067A (enExample)
CN (1) CN1411601A (enExample)
AT (1) ATE339764T1 (enExample)
AU (1) AU2271301A (enExample)
CA (4) CA2704894A1 (enExample)
DE (1) DE60030765T2 (enExample)
ES (1) ES2269213T3 (enExample)
HK (1) HK1052248A1 (enExample)
WO (1) WO2001045106A2 (enExample)

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Also Published As

Publication number Publication date
HK1052248A1 (zh) 2003-09-05
EP1238393A2 (en) 2002-09-11
DE60030765D1 (de) 2006-10-26
JP4795598B2 (ja) 2011-10-19
WO2001045106A3 (en) 2002-01-10
JP5123410B2 (ja) 2013-01-23
US6392925B2 (en) 2002-05-21
EP1713079A1 (en) 2006-10-18
JP2012141993A (ja) 2012-07-26
JP2003517168A (ja) 2003-05-20
EP1710806A1 (en) 2006-10-11
EP1710806B1 (en) 2016-02-03
JP2014160485A (ja) 2014-09-04
EP1713080A1 (en) 2006-10-18
CA2704893A1 (en) 2001-06-21
CA2393143A1 (en) 2001-06-21
DE60030765T2 (de) 2007-09-13
WO2001045106A2 (en) 2001-06-21
JP2011192290A (ja) 2011-09-29
JP2012141994A (ja) 2012-07-26
CA2704894A1 (en) 2001-06-21
US6407949B1 (en) 2002-06-18
JP5801436B2 (ja) 2015-10-28
EP1238393B1 (en) 2006-09-13
US20010036109A1 (en) 2001-11-01
CA2704892A1 (en) 2001-06-21
AU2271301A (en) 2001-06-25
CN1411601A (zh) 2003-04-16
EP1713079B1 (en) 2018-03-21
JP5453471B2 (ja) 2014-03-26
ES2269213T3 (es) 2007-04-01
ATE339764T1 (de) 2006-10-15

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20020617

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid