DE69739825D1 - Sektorbasierter Halbleiterspeicher mit verstellbaren Sektoradressen - Google Patents

Sektorbasierter Halbleiterspeicher mit verstellbaren Sektoradressen

Info

Publication number
DE69739825D1
DE69739825D1 DE69739825T DE69739825T DE69739825D1 DE 69739825 D1 DE69739825 D1 DE 69739825D1 DE 69739825 T DE69739825 T DE 69739825T DE 69739825 T DE69739825 T DE 69739825T DE 69739825 D1 DE69739825 D1 DE 69739825D1
Authority
DE
Germany
Prior art keywords
sector
semiconductor memory
based semiconductor
adjustable
addresses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739825T
Other languages
English (en)
Inventor
Simone Bartoli
Vincenzo Dima
Mauro Luigi Sali
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69739825D1 publication Critical patent/DE69739825D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE69739825T 1997-09-24 1997-09-24 Sektorbasierter Halbleiterspeicher mit verstellbaren Sektoradressen Expired - Lifetime DE69739825D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97830467A EP0905704B1 (de) 1997-09-24 1997-09-24 Sektorbasierter Halbleiterspeicher mit verstellbaren Sektoradressen

Publications (1)

Publication Number Publication Date
DE69739825D1 true DE69739825D1 (de) 2010-05-12

Family

ID=8230782

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739825T Expired - Lifetime DE69739825D1 (de) 1997-09-24 1997-09-24 Sektorbasierter Halbleiterspeicher mit verstellbaren Sektoradressen

Country Status (3)

Country Link
US (1) US6401164B1 (de)
EP (1) EP0905704B1 (de)
DE (1) DE69739825D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6279114B1 (en) 1998-11-04 2001-08-21 Sandisk Corporation Voltage negotiation in a single host multiple cards system
US6591327B1 (en) * 1999-06-22 2003-07-08 Silicon Storage Technology, Inc. Flash memory with alterable erase sector size
US6407949B1 (en) 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory
US6654847B1 (en) * 2000-06-30 2003-11-25 Micron Technology, Inc. Top/bottom symmetrical protection scheme for flash
US6704850B1 (en) 2000-08-23 2004-03-09 Triscend Corporation Method and apparatus for determining the width of a memory subsystem
US6877063B1 (en) * 2000-12-22 2005-04-05 Xilinx, Inc. Multiple memory aliasing for a configurable system-on-chip
JP4731020B2 (ja) * 2001-01-24 2011-07-20 富士通セミコンダクター株式会社 半導体記憶装置、セクタアドレス変換回路、アドレス変換方法及び半導体記憶装置の使用方法
JP2002329396A (ja) * 2001-04-26 2002-11-15 Fujitsu Ltd バンク構成を変更可能なフラッシュメモリ
JP3827540B2 (ja) * 2001-06-28 2006-09-27 シャープ株式会社 不揮発性半導体記憶装置および情報機器
KR100452038B1 (ko) * 2002-11-20 2004-10-08 주식회사 하이닉스반도체 플래쉬 메모리 장치
US7082525B2 (en) 2002-10-02 2006-07-25 Sandisk Corporation Booting from non-linear memory
US8949548B2 (en) 2003-09-12 2015-02-03 Broadcom Corporation System and method of sharing memory by arbitrating through an internal data bus
US7325121B2 (en) * 2003-09-12 2008-01-29 Broadcom Corporation System and method of utilizing off-chip memory
US7594135B2 (en) 2003-12-31 2009-09-22 Sandisk Corporation Flash memory system startup operation
US7414891B2 (en) * 2007-01-04 2008-08-19 Atmel Corporation Erase verify method for NAND-type flash memories
US8510497B2 (en) * 2009-07-29 2013-08-13 Stec, Inc. Flash storage device with flexible data format

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446534A (en) * 1980-12-08 1984-05-01 National Semiconductor Corporation Programmable fuse circuit
JPS63290018A (ja) * 1987-05-21 1988-11-28 Mitsubishi Electric Corp 論理回路
US6009495A (en) * 1989-12-29 1999-12-28 Packard Bell Nec Protected address range in an electrically erasable programmable read only memory
US5261068A (en) * 1990-05-25 1993-11-09 Dell Usa L.P. Dual path memory retrieval system for an interleaved dynamic RAM memory unit
US5473775A (en) * 1991-10-11 1995-12-05 Kabushiki Kaisha Toshiba Personal computer using flash memory as BIOS-ROM
JPH06119230A (ja) * 1992-10-06 1994-04-28 Fujitsu Ltd 半導体記憶装置
US5522076A (en) * 1993-05-13 1996-05-28 Kabushiki Kaisha Toshiba Computer system having BIOS (basic input/output system)-ROM (Read Only Memory) writing function
US5568641A (en) * 1995-01-18 1996-10-22 Hewlett-Packard Company Powerfail durable flash EEPROM upgrade
DE69523481T2 (de) * 1995-05-31 2002-05-23 Macronix Int Co Ltd Technik zum rekonfigurieren eines speichers hoher dichte
US5627784A (en) * 1995-07-28 1997-05-06 Micron Quantum Devices, Inc. Memory system having non-volatile data storage structure for memory control parameters and method

Also Published As

Publication number Publication date
EP0905704A1 (de) 1999-03-31
EP0905704B1 (de) 2010-03-31
US6401164B1 (en) 2002-06-04

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