KR20020092831A - 어드레싱 회로와, 메모리 회로와, 집적 회로와, 데이터판정 방법 및 기록 방법 - Google Patents

어드레싱 회로와, 메모리 회로와, 집적 회로와, 데이터판정 방법 및 기록 방법 Download PDF

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Publication number
KR20020092831A
KR20020092831A KR1020020031325A KR20020031325A KR20020092831A KR 20020092831 A KR20020092831 A KR 20020092831A KR 1020020031325 A KR1020020031325 A KR 1020020031325A KR 20020031325 A KR20020031325 A KR 20020031325A KR 20020092831 A KR20020092831 A KR 20020092831A
Authority
KR
South Korea
Prior art keywords
memory
diode
circuit
array
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020031325A
Other languages
English (en)
Korean (ko)
Inventor
타우시그칼
엘더리챠드
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 컴퍼니(델라웨어주법인) filed Critical 휴렛-팩커드 컴퍼니(델라웨어주법인)
Publication of KR20020092831A publication Critical patent/KR20020092831A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
KR1020020031325A 2001-06-05 2002-06-04 어드레싱 회로와, 메모리 회로와, 집적 회로와, 데이터판정 방법 및 기록 방법 Ceased KR20020092831A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/875,496 2001-06-05
US09/875,496 US6567295B2 (en) 2001-06-05 2001-06-05 Addressing and sensing a cross-point diode memory array

Publications (1)

Publication Number Publication Date
KR20020092831A true KR20020092831A (ko) 2002-12-12

Family

ID=25365914

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020031325A Ceased KR20020092831A (ko) 2001-06-05 2002-06-04 어드레싱 회로와, 메모리 회로와, 집적 회로와, 데이터판정 방법 및 기록 방법

Country Status (6)

Country Link
US (1) US6567295B2 (enExample)
EP (1) EP1265248A3 (enExample)
JP (1) JP3895640B2 (enExample)
KR (1) KR20020092831A (enExample)
CN (1) CN100378863C (enExample)
TW (1) TW571439B (enExample)

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US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US7064879B1 (en) * 2000-04-07 2006-06-20 Microsoft Corporation Magnetically actuated microelectrochemical systems actuator
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
WO2002027768A2 (en) * 2000-09-27 2002-04-04 Nüp2 Incorporated Fabrication of semiconductor devices
US6775048B1 (en) * 2000-10-31 2004-08-10 Microsoft Corporation Microelectrical mechanical structure (MEMS) optical modulator and optical display system
JP2002343562A (ja) * 2001-05-11 2002-11-29 Pioneer Electronic Corp 発光ディスプレイ装置及びその製造方法
US6804959B2 (en) * 2001-12-31 2004-10-19 Microsoft Corporation Unilateral thermal buckle-beam actuator
US6797163B2 (en) * 2002-03-28 2004-09-28 Tetra Holding (Us), Inc. Filtration devices
US7053519B2 (en) * 2002-03-29 2006-05-30 Microsoft Corporation Electrostatic bimorph actuator
US6813182B2 (en) * 2002-05-31 2004-11-02 Hewlett-Packard Development Company, L.P. Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
US6876594B2 (en) * 2002-12-26 2005-04-05 Texas Instruments Incorporated Integrated circuit with programmable fuse array
US7179534B2 (en) * 2003-01-31 2007-02-20 Princeton University Conductive-polymer electronic switch
US6980465B2 (en) * 2003-12-19 2005-12-27 Hewlett-Packard Development Company, L.P. Addressing circuit for a cross-point memory array including cross-point resistive elements
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US7462513B2 (en) * 2005-08-22 2008-12-09 Lexmark International, Inc. Methods for making printed fuse devices
US7486534B2 (en) * 2005-12-08 2009-02-03 Macronix International Co., Ltd. Diode-less array for one-time programmable memory
KR101048199B1 (ko) 2006-11-20 2011-07-08 파나소닉 주식회사 비휘발성 반도체 기억 장치 및 그 제조 방법
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
WO2009149061A2 (en) * 2008-06-02 2009-12-10 Contour Semiconductor, Inc. Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US8461566B2 (en) * 2009-11-02 2013-06-11 Micron Technology, Inc. Methods, structures and devices for increasing memory density
WO2013046217A2 (en) * 2011-06-13 2013-04-04 Indian Institute Of Technology Bombay Selector device for bipolar rram
JP2013069928A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置
US10978007B2 (en) * 2018-12-03 2021-04-13 Sharp Life Science (Eu) Limited AM-EWOD circuit configuration with sensing column detection circuit
CN116413678A (zh) * 2021-12-29 2023-07-11 深圳市速腾聚创科技有限公司 阴极选址驱动电路、可寻址驱动电路及激光发射电路

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Publication number Priority date Publication date Assignee Title
BE757114A (fr) * 1969-10-08 1971-03-16 Western Electric Co Memoire a matrice de points de croisement
US4385368A (en) * 1980-11-24 1983-05-24 Raytheon Company Programmable read only memory
US4795657A (en) * 1984-04-13 1989-01-03 Energy Conversion Devices, Inc. Method of fabricating a programmable array
US4782340A (en) * 1986-08-22 1988-11-01 Energy Conversion Devices, Inc. Electronic arrays having thin film line drivers
JPH04348068A (ja) * 1991-03-18 1992-12-03 Toshiba Corp 半導体記憶装置
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6285582B1 (en) * 2000-03-20 2001-09-04 Epitaxial Technologies, Llc Two-dimensional resonant tunneling diode memory system
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays

Also Published As

Publication number Publication date
CN1397952A (zh) 2003-02-19
TW571439B (en) 2004-01-11
US20020191434A1 (en) 2002-12-19
CN100378863C (zh) 2008-04-02
JP3895640B2 (ja) 2007-03-22
JP2003059281A (ja) 2003-02-28
EP1265248A3 (en) 2003-09-17
US6567295B2 (en) 2003-05-20
EP1265248A2 (en) 2002-12-11

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