TW571439B - Addressing and sensing a cross-point diode memory array - Google Patents
Addressing and sensing a cross-point diode memory array Download PDFInfo
- Publication number
- TW571439B TW571439B TW091108561A TW91108561A TW571439B TW 571439 B TW571439 B TW 571439B TW 091108561 A TW091108561 A TW 091108561A TW 91108561 A TW91108561 A TW 91108561A TW 571439 B TW571439 B TW 571439B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- electrodes
- circuit
- address lines
- group
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 264
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 10
- 238000003491 array Methods 0.000 claims description 4
- 230000002079 cooperative effect Effects 0.000 claims 4
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 241000287107 Passer Species 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
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- 230000005540 biological transmission Effects 0.000 description 3
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- 239000010408 film Substances 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
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- 230000002441 reversible effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/875,496 US6567295B2 (en) | 2001-06-05 | 2001-06-05 | Addressing and sensing a cross-point diode memory array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW571439B true TW571439B (en) | 2004-01-11 |
Family
ID=25365914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091108561A TW571439B (en) | 2001-06-05 | 2002-04-25 | Addressing and sensing a cross-point diode memory array |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6567295B2 (enExample) |
| EP (1) | EP1265248A3 (enExample) |
| JP (1) | JP3895640B2 (enExample) |
| KR (1) | KR20020092831A (enExample) |
| CN (1) | CN100378863C (enExample) |
| TW (1) | TW571439B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI491024B (zh) * | 2009-11-02 | 2015-07-01 | Micron Technology Inc | 用於增加記憶體密度之方法、結構及裝置 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5673218A (en) | 1996-03-05 | 1997-09-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
| US7064879B1 (en) * | 2000-04-07 | 2006-06-20 | Microsoft Corporation | Magnetically actuated microelectrochemical systems actuator |
| US6956757B2 (en) * | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
| WO2002027768A2 (en) * | 2000-09-27 | 2002-04-04 | Nüp2 Incorporated | Fabrication of semiconductor devices |
| US6775048B1 (en) * | 2000-10-31 | 2004-08-10 | Microsoft Corporation | Microelectrical mechanical structure (MEMS) optical modulator and optical display system |
| JP2002343562A (ja) * | 2001-05-11 | 2002-11-29 | Pioneer Electronic Corp | 発光ディスプレイ装置及びその製造方法 |
| US6804959B2 (en) * | 2001-12-31 | 2004-10-19 | Microsoft Corporation | Unilateral thermal buckle-beam actuator |
| US6797163B2 (en) * | 2002-03-28 | 2004-09-28 | Tetra Holding (Us), Inc. | Filtration devices |
| US7053519B2 (en) * | 2002-03-29 | 2006-05-30 | Microsoft Corporation | Electrostatic bimorph actuator |
| US6813182B2 (en) * | 2002-05-31 | 2004-11-02 | Hewlett-Packard Development Company, L.P. | Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet |
| US6876594B2 (en) * | 2002-12-26 | 2005-04-05 | Texas Instruments Incorporated | Integrated circuit with programmable fuse array |
| US7179534B2 (en) * | 2003-01-31 | 2007-02-20 | Princeton University | Conductive-polymer electronic switch |
| US6980465B2 (en) * | 2003-12-19 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Addressing circuit for a cross-point memory array including cross-point resistive elements |
| US7106639B2 (en) * | 2004-09-01 | 2006-09-12 | Hewlett-Packard Development Company, L.P. | Defect management enabled PIRM and method |
| US7462513B2 (en) * | 2005-08-22 | 2008-12-09 | Lexmark International, Inc. | Methods for making printed fuse devices |
| US7486534B2 (en) * | 2005-12-08 | 2009-02-03 | Macronix International Co., Ltd. | Diode-less array for one-time programmable memory |
| KR101048199B1 (ko) | 2006-11-20 | 2011-07-08 | 파나소닉 주식회사 | 비휘발성 반도체 기억 장치 및 그 제조 방법 |
| US7583554B2 (en) * | 2007-03-02 | 2009-09-01 | Freescale Semiconductor, Inc. | Integrated circuit fuse array |
| US7813157B2 (en) * | 2007-10-29 | 2010-10-12 | Contour Semiconductor, Inc. | Non-linear conductor memory |
| US20090225621A1 (en) * | 2008-03-05 | 2009-09-10 | Shepard Daniel R | Split decoder storage array and methods of forming the same |
| WO2009149061A2 (en) * | 2008-06-02 | 2009-12-10 | Contour Semiconductor, Inc. | Diode decoder array with non-sequential layout and methods of forming the same |
| US8325556B2 (en) * | 2008-10-07 | 2012-12-04 | Contour Semiconductor, Inc. | Sequencing decoder circuit |
| WO2013046217A2 (en) * | 2011-06-13 | 2013-04-04 | Indian Institute Of Technology Bombay | Selector device for bipolar rram |
| JP2013069928A (ja) * | 2011-09-22 | 2013-04-18 | Toshiba Corp | 不揮発性半導体記憶装置 |
| US10978007B2 (en) * | 2018-12-03 | 2021-04-13 | Sharp Life Science (Eu) Limited | AM-EWOD circuit configuration with sensing column detection circuit |
| CN116413678A (zh) * | 2021-12-29 | 2023-07-11 | 深圳市速腾聚创科技有限公司 | 阴极选址驱动电路、可寻址驱动电路及激光发射电路 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE757114A (fr) * | 1969-10-08 | 1971-03-16 | Western Electric Co | Memoire a matrice de points de croisement |
| US4385368A (en) * | 1980-11-24 | 1983-05-24 | Raytheon Company | Programmable read only memory |
| US4795657A (en) * | 1984-04-13 | 1989-01-03 | Energy Conversion Devices, Inc. | Method of fabricating a programmable array |
| US4782340A (en) * | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
| JPH04348068A (ja) * | 1991-03-18 | 1992-12-03 | Toshiba Corp | 半導体記憶装置 |
| US5889694A (en) * | 1996-03-05 | 1999-03-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
| US6285582B1 (en) * | 2000-03-20 | 2001-09-04 | Epitaxial Technologies, Llc | Two-dimensional resonant tunneling diode memory system |
| US6385075B1 (en) * | 2001-06-05 | 2002-05-07 | Hewlett-Packard Company | Parallel access of cross-point diode memory arrays |
-
2001
- 2001-06-05 US US09/875,496 patent/US6567295B2/en not_active Expired - Lifetime
-
2002
- 2002-04-25 TW TW091108561A patent/TW571439B/zh not_active IP Right Cessation
- 2002-06-04 KR KR1020020031325A patent/KR20020092831A/ko not_active Ceased
- 2002-06-05 EP EP02253898A patent/EP1265248A3/en not_active Withdrawn
- 2002-06-05 CN CNB021224471A patent/CN100378863C/zh not_active Expired - Lifetime
- 2002-06-05 JP JP2002164627A patent/JP3895640B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI491024B (zh) * | 2009-11-02 | 2015-07-01 | Micron Technology Inc | 用於增加記憶體密度之方法、結構及裝置 |
| US9337237B2 (en) | 2009-11-02 | 2016-05-10 | Micron Technology, Inc. | Methods, structures and devices for increasing memory density |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1397952A (zh) | 2003-02-19 |
| US20020191434A1 (en) | 2002-12-19 |
| CN100378863C (zh) | 2008-04-02 |
| JP3895640B2 (ja) | 2007-03-22 |
| KR20020092831A (ko) | 2002-12-12 |
| JP2003059281A (ja) | 2003-02-28 |
| EP1265248A3 (en) | 2003-09-17 |
| US6567295B2 (en) | 2003-05-20 |
| EP1265248A2 (en) | 2002-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |