CN100378863C - 寻址和读出交叉点二极管存储器阵列的电路和方法 - Google Patents

寻址和读出交叉点二极管存储器阵列的电路和方法 Download PDF

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Publication number
CN100378863C
CN100378863C CNB021224471A CN02122447A CN100378863C CN 100378863 C CN100378863 C CN 100378863C CN B021224471 A CNB021224471 A CN B021224471A CN 02122447 A CN02122447 A CN 02122447A CN 100378863 C CN100378863 C CN 100378863C
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CN
China
Prior art keywords
memory array
address lines
diode
addressing
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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CNB021224471A
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English (en)
Chinese (zh)
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CN1397952A (zh
Inventor
C·陶斯
R·埃尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Hewlett Packard Co
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Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1397952A publication Critical patent/CN1397952A/zh
Application granted granted Critical
Publication of CN100378863C publication Critical patent/CN100378863C/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
CNB021224471A 2001-06-05 2002-06-05 寻址和读出交叉点二极管存储器阵列的电路和方法 Expired - Lifetime CN100378863C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/875,496 US6567295B2 (en) 2001-06-05 2001-06-05 Addressing and sensing a cross-point diode memory array
US09/875496 2001-06-05

Publications (2)

Publication Number Publication Date
CN1397952A CN1397952A (zh) 2003-02-19
CN100378863C true CN100378863C (zh) 2008-04-02

Family

ID=25365914

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021224471A Expired - Lifetime CN100378863C (zh) 2001-06-05 2002-06-05 寻址和读出交叉点二极管存储器阵列的电路和方法

Country Status (6)

Country Link
US (1) US6567295B2 (enExample)
EP (1) EP1265248A3 (enExample)
JP (1) JP3895640B2 (enExample)
KR (1) KR20020092831A (enExample)
CN (1) CN100378863C (enExample)
TW (1) TW571439B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US7064879B1 (en) * 2000-04-07 2006-06-20 Microsoft Corporation Magnetically actuated microelectrochemical systems actuator
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
WO2002027768A2 (en) * 2000-09-27 2002-04-04 Nüp2 Incorporated Fabrication of semiconductor devices
US6775048B1 (en) * 2000-10-31 2004-08-10 Microsoft Corporation Microelectrical mechanical structure (MEMS) optical modulator and optical display system
JP2002343562A (ja) * 2001-05-11 2002-11-29 Pioneer Electronic Corp 発光ディスプレイ装置及びその製造方法
US6804959B2 (en) * 2001-12-31 2004-10-19 Microsoft Corporation Unilateral thermal buckle-beam actuator
US6797163B2 (en) * 2002-03-28 2004-09-28 Tetra Holding (Us), Inc. Filtration devices
US7053519B2 (en) * 2002-03-29 2006-05-30 Microsoft Corporation Electrostatic bimorph actuator
US6813182B2 (en) * 2002-05-31 2004-11-02 Hewlett-Packard Development Company, L.P. Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
US6876594B2 (en) * 2002-12-26 2005-04-05 Texas Instruments Incorporated Integrated circuit with programmable fuse array
US7179534B2 (en) * 2003-01-31 2007-02-20 Princeton University Conductive-polymer electronic switch
US6980465B2 (en) * 2003-12-19 2005-12-27 Hewlett-Packard Development Company, L.P. Addressing circuit for a cross-point memory array including cross-point resistive elements
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US7462513B2 (en) * 2005-08-22 2008-12-09 Lexmark International, Inc. Methods for making printed fuse devices
US7486534B2 (en) * 2005-12-08 2009-02-03 Macronix International Co., Ltd. Diode-less array for one-time programmable memory
KR101048199B1 (ko) 2006-11-20 2011-07-08 파나소닉 주식회사 비휘발성 반도체 기억 장치 및 그 제조 방법
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
WO2009149061A2 (en) * 2008-06-02 2009-12-10 Contour Semiconductor, Inc. Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US8461566B2 (en) * 2009-11-02 2013-06-11 Micron Technology, Inc. Methods, structures and devices for increasing memory density
WO2013046217A2 (en) * 2011-06-13 2013-04-04 Indian Institute Of Technology Bombay Selector device for bipolar rram
JP2013069928A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置
US10978007B2 (en) * 2018-12-03 2021-04-13 Sharp Life Science (Eu) Limited AM-EWOD circuit configuration with sensing column detection circuit
CN116413678A (zh) * 2021-12-29 2023-07-11 深圳市速腾聚创科技有限公司 阴极选址驱动电路、可寻址驱动电路及激光发射电路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385368A (en) * 1980-11-24 1983-05-24 Raytheon Company Programmable read only memory
US4795657A (en) * 1984-04-13 1989-01-03 Energy Conversion Devices, Inc. Method of fabricating a programmable array
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
BE757114A (fr) * 1969-10-08 1971-03-16 Western Electric Co Memoire a matrice de points de croisement
US4782340A (en) * 1986-08-22 1988-11-01 Energy Conversion Devices, Inc. Electronic arrays having thin film line drivers
JPH04348068A (ja) * 1991-03-18 1992-12-03 Toshiba Corp 半導体記憶装置
US6285582B1 (en) * 2000-03-20 2001-09-04 Epitaxial Technologies, Llc Two-dimensional resonant tunneling diode memory system
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385368A (en) * 1980-11-24 1983-05-24 Raytheon Company Programmable read only memory
US4795657A (en) * 1984-04-13 1989-01-03 Energy Conversion Devices, Inc. Method of fabricating a programmable array
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device

Also Published As

Publication number Publication date
CN1397952A (zh) 2003-02-19
TW571439B (en) 2004-01-11
US20020191434A1 (en) 2002-12-19
JP3895640B2 (ja) 2007-03-22
KR20020092831A (ko) 2002-12-12
JP2003059281A (ja) 2003-02-28
EP1265248A3 (en) 2003-09-17
US6567295B2 (en) 2003-05-20
EP1265248A2 (en) 2002-12-11

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C06 Publication
PB01 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG ELECTRONICS CO., LTD.

Free format text: FORMER OWNER: HEWLETT-PACKARD CO. (US) P.O. BOX 10301, PALO ALTO CALIFORNIA U.S.A.

Effective date: 20110222

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: STATE OF CALIFORNIA, THE USA TO: GYEONGGI-DO, SOUTH KOREA

TR01 Transfer of patent right

Effective date of registration: 20110222

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Electronics Co.,Ltd.

Address before: California, USA

Patentee before: Hewlett-Packard Co.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20080402