JP3895640B2 - クロスポイントダイオードメモリアレイのアドレス指定及びセンシング - Google Patents

クロスポイントダイオードメモリアレイのアドレス指定及びセンシング Download PDF

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Publication number
JP3895640B2
JP3895640B2 JP2002164627A JP2002164627A JP3895640B2 JP 3895640 B2 JP3895640 B2 JP 3895640B2 JP 2002164627 A JP2002164627 A JP 2002164627A JP 2002164627 A JP2002164627 A JP 2002164627A JP 3895640 B2 JP3895640 B2 JP 3895640B2
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JP
Japan
Prior art keywords
memory
electrodes
address lines
diode
memory array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2002164627A
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English (en)
Japanese (ja)
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JP2003059281A5 (enExample
JP2003059281A (ja
Inventor
カール・タウシグ
リチャード・エルダー
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HP Inc
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Hewlett Packard Co
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Publication of JP2003059281A publication Critical patent/JP2003059281A/ja
Publication of JP2003059281A5 publication Critical patent/JP2003059281A5/ja
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Publication of JP3895640B2 publication Critical patent/JP3895640B2/ja
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP2002164627A 2001-06-05 2002-06-05 クロスポイントダイオードメモリアレイのアドレス指定及びセンシング Expired - Fee Related JP3895640B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/875,496 US6567295B2 (en) 2001-06-05 2001-06-05 Addressing and sensing a cross-point diode memory array
US09/875496 2001-06-05

Publications (3)

Publication Number Publication Date
JP2003059281A JP2003059281A (ja) 2003-02-28
JP2003059281A5 JP2003059281A5 (enExample) 2005-04-07
JP3895640B2 true JP3895640B2 (ja) 2007-03-22

Family

ID=25365914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002164627A Expired - Fee Related JP3895640B2 (ja) 2001-06-05 2002-06-05 クロスポイントダイオードメモリアレイのアドレス指定及びセンシング

Country Status (6)

Country Link
US (1) US6567295B2 (enExample)
EP (1) EP1265248A3 (enExample)
JP (1) JP3895640B2 (enExample)
KR (1) KR20020092831A (enExample)
CN (1) CN100378863C (enExample)
TW (1) TW571439B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US7064879B1 (en) * 2000-04-07 2006-06-20 Microsoft Corporation Magnetically actuated microelectrochemical systems actuator
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
WO2002027768A2 (en) * 2000-09-27 2002-04-04 Nüp2 Incorporated Fabrication of semiconductor devices
US6775048B1 (en) * 2000-10-31 2004-08-10 Microsoft Corporation Microelectrical mechanical structure (MEMS) optical modulator and optical display system
JP2002343562A (ja) * 2001-05-11 2002-11-29 Pioneer Electronic Corp 発光ディスプレイ装置及びその製造方法
US6804959B2 (en) * 2001-12-31 2004-10-19 Microsoft Corporation Unilateral thermal buckle-beam actuator
US6797163B2 (en) * 2002-03-28 2004-09-28 Tetra Holding (Us), Inc. Filtration devices
US7053519B2 (en) * 2002-03-29 2006-05-30 Microsoft Corporation Electrostatic bimorph actuator
US6813182B2 (en) * 2002-05-31 2004-11-02 Hewlett-Packard Development Company, L.P. Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
US6876594B2 (en) * 2002-12-26 2005-04-05 Texas Instruments Incorporated Integrated circuit with programmable fuse array
US7179534B2 (en) * 2003-01-31 2007-02-20 Princeton University Conductive-polymer electronic switch
US6980465B2 (en) * 2003-12-19 2005-12-27 Hewlett-Packard Development Company, L.P. Addressing circuit for a cross-point memory array including cross-point resistive elements
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
US7462513B2 (en) * 2005-08-22 2008-12-09 Lexmark International, Inc. Methods for making printed fuse devices
US7486534B2 (en) * 2005-12-08 2009-02-03 Macronix International Co., Ltd. Diode-less array for one-time programmable memory
KR101048199B1 (ko) 2006-11-20 2011-07-08 파나소닉 주식회사 비휘발성 반도체 기억 장치 및 그 제조 방법
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
WO2009149061A2 (en) * 2008-06-02 2009-12-10 Contour Semiconductor, Inc. Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US8461566B2 (en) * 2009-11-02 2013-06-11 Micron Technology, Inc. Methods, structures and devices for increasing memory density
WO2013046217A2 (en) * 2011-06-13 2013-04-04 Indian Institute Of Technology Bombay Selector device for bipolar rram
JP2013069928A (ja) * 2011-09-22 2013-04-18 Toshiba Corp 不揮発性半導体記憶装置
US10978007B2 (en) * 2018-12-03 2021-04-13 Sharp Life Science (Eu) Limited AM-EWOD circuit configuration with sensing column detection circuit
CN116413678A (zh) * 2021-12-29 2023-07-11 深圳市速腾聚创科技有限公司 阴极选址驱动电路、可寻址驱动电路及激光发射电路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE757114A (fr) * 1969-10-08 1971-03-16 Western Electric Co Memoire a matrice de points de croisement
US4385368A (en) * 1980-11-24 1983-05-24 Raytheon Company Programmable read only memory
US4795657A (en) * 1984-04-13 1989-01-03 Energy Conversion Devices, Inc. Method of fabricating a programmable array
US4782340A (en) * 1986-08-22 1988-11-01 Energy Conversion Devices, Inc. Electronic arrays having thin film line drivers
JPH04348068A (ja) * 1991-03-18 1992-12-03 Toshiba Corp 半導体記憶装置
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6285582B1 (en) * 2000-03-20 2001-09-04 Epitaxial Technologies, Llc Two-dimensional resonant tunneling diode memory system
US6385075B1 (en) * 2001-06-05 2002-05-07 Hewlett-Packard Company Parallel access of cross-point diode memory arrays

Also Published As

Publication number Publication date
CN1397952A (zh) 2003-02-19
TW571439B (en) 2004-01-11
US20020191434A1 (en) 2002-12-19
CN100378863C (zh) 2008-04-02
KR20020092831A (ko) 2002-12-12
JP2003059281A (ja) 2003-02-28
EP1265248A3 (en) 2003-09-17
US6567295B2 (en) 2003-05-20
EP1265248A2 (en) 2002-12-11

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