KR20010082216A - 유전체 재료 플라즈마 에칭 방법 - Google Patents
유전체 재료 플라즈마 에칭 방법 Download PDFInfo
- Publication number
- KR20010082216A KR20010082216A KR1020017004035A KR20017004035A KR20010082216A KR 20010082216 A KR20010082216 A KR 20010082216A KR 1020017004035 A KR1020017004035 A KR 1020017004035A KR 20017004035 A KR20017004035 A KR 20017004035A KR 20010082216 A KR20010082216 A KR 20010082216A
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- layer
- openings
- reactor
- etch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000001020 plasma etching Methods 0.000 title claims description 26
- 239000003989 dielectric material Substances 0.000 title description 8
- 238000005530 etching Methods 0.000 claims abstract description 66
- 239000007789 gas Substances 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 230000000873 masking effect Effects 0.000 claims abstract description 20
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000376 reactant Substances 0.000 claims abstract description 14
- 229910002091 carbon monoxide Inorganic materials 0.000 claims abstract description 13
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000012159 carrier gas Substances 0.000 claims abstract description 11
- 229910052786 argon Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 210000002381 plasma Anatomy 0.000 description 43
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 23
- 230000035515 penetration Effects 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000005368 silicate glass Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- -1 silicon dioxide Chemical compound 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GNKTZDSRQHMHLZ-UHFFFAOYSA-N [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] Chemical compound [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] GNKTZDSRQHMHLZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- YZYDPPZYDIRSJT-UHFFFAOYSA-K boron phosphate Chemical compound [B+3].[O-]P([O-])([O-])=O YZYDPPZYDIRSJT-UHFFFAOYSA-K 0.000 description 2
- 229910000149 boron phosphate Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000011885 synergistic combination Substances 0.000 description 1
- UTPUGGVELDVHES-UHFFFAOYSA-N tetrafluoromethane hydrofluoride Chemical compound F.FC(F)(F)F UTPUGGVELDVHES-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/163,301 US6297163B1 (en) | 1998-09-30 | 1998-09-30 | Method of plasma etching dielectric materials |
| US09/163,301 | 1998-09-30 | ||
| PCT/US1999/020888 WO2000019506A1 (en) | 1998-09-30 | 1999-09-24 | Method of plasma etching dielectric materials |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077000756A Division KR20070020325A (ko) | 1998-09-30 | 1999-09-24 | 유전체 재료 플라즈마 에칭 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010082216A true KR20010082216A (ko) | 2001-08-29 |
Family
ID=22589392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020017004035A Ceased KR20010082216A (ko) | 1998-09-30 | 1999-09-24 | 유전체 재료 플라즈마 에칭 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6297163B1 (enExample) |
| EP (1) | EP1121714A1 (enExample) |
| JP (1) | JP4499289B2 (enExample) |
| KR (1) | KR20010082216A (enExample) |
| AU (1) | AU6246399A (enExample) |
| TW (1) | TW584672B (enExample) |
| WO (1) | WO2000019506A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100434312B1 (ko) * | 2000-12-21 | 2004-06-05 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택홀 형성 방법 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6518591B1 (en) * | 1998-12-02 | 2003-02-11 | Cypress Semiconductor Corporation | Contact monitor, method of forming same and method of analizing contact-, via- and/or trench-forming processes in an integrated circuit |
| TW434816B (en) * | 1998-12-28 | 2001-05-16 | Asahi Chemical Micro Syst | Method for forming contact hole |
| US6797189B2 (en) | 1999-03-25 | 2004-09-28 | Hoiman (Raymond) Hung | Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon |
| US6251770B1 (en) * | 1999-06-30 | 2001-06-26 | Lam Research Corp. | Dual-damascene dielectric structures and methods for making the same |
| US6749763B1 (en) * | 1999-08-02 | 2004-06-15 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method |
| US20050158666A1 (en) * | 1999-10-15 | 2005-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma |
| JP3586605B2 (ja) * | 1999-12-21 | 2004-11-10 | Ｎｅｃエレクトロニクス株式会社 | シリコン窒化膜のエッチング方法及び半導体装置の製造方法 |
| US6432318B1 (en) * | 2000-02-17 | 2002-08-13 | Applied Materials, Inc. | Dielectric etch process reducing striations and maintaining critical dimensions |
| US7931820B2 (en) * | 2000-09-07 | 2011-04-26 | Daikin Industries, Ltd. | Dry etching gas and method for dry etching |
| KR100379976B1 (ko) * | 2000-11-27 | 2003-04-16 | 삼성전자주식회사 | 실리콘 산화물 식각용 가스 조성물 및 이를 사용한 실리콘산화물의 식각 방법 |
| CN1249788C (zh) * | 2000-12-21 | 2006-04-05 | 东京毅力科创株式会社 | 绝缘膜的蚀刻方法 |
| US6740593B2 (en) * | 2002-01-25 | 2004-05-25 | Micron Technology, Inc. | Semiconductor processing methods utilizing low concentrations of reactive etching components |
| US6593232B1 (en) | 2002-07-05 | 2003-07-15 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma etch method with enhanced endpoint detection |
| US6838012B2 (en) | 2002-10-31 | 2005-01-04 | Lam Research Corporation | Methods for etching dielectric materials |
| US7083903B2 (en) * | 2003-06-17 | 2006-08-01 | Lam Research Corporation | Methods of etching photoresist on substrates |
| US6949469B1 (en) | 2003-12-16 | 2005-09-27 | Lam Research Corporation | Methods and apparatus for the optimization of photo resist etching in a plasma processing system |
| US7504340B1 (en) * | 2004-06-14 | 2009-03-17 | National Semiconductor Corporation | System and method for providing contact etch selectivity using RIE lag dependence on contact aspect ratio |
| US20070287301A1 (en) | 2006-03-31 | 2007-12-13 | Huiwen Xu | Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics |
| TWI424498B (zh) * | 2006-03-31 | 2014-01-21 | Applied Materials Inc | 用以改良介電薄膜之階梯覆蓋與圖案負載的方法 |
| DE112007002810T5 (de) * | 2007-01-05 | 2009-11-12 | Nxp B.V. | Ätzverfahren mit verbesserter Kontrolle der kritischen Ausdehnung eines Strukturelements an der Unterseite dicker Schichten |
| US7985681B2 (en) * | 2007-06-22 | 2011-07-26 | Micron Technology, Inc. | Method for selectively forming symmetrical or asymmetrical features using a symmetrical photomask during fabrication of a semiconductor device and electronic systems including the semiconductor device |
| US8603363B1 (en) * | 2012-06-20 | 2013-12-10 | Praxair Technology, Inc. | Compositions for extending ion source life and improving ion source performance during carbon implantation |
| JP2014007270A (ja) * | 2012-06-25 | 2014-01-16 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
| CN103824767B (zh) * | 2012-11-16 | 2017-05-17 | 中微半导体设备(上海)有限公司 | 一种深硅通孔的刻蚀方法 |
| JP6557642B2 (ja) * | 2016-09-05 | 2019-08-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5013400A (en) | 1990-01-30 | 1991-05-07 | General Signal Corporation | Dry etch process for forming champagne profiles, and dry etch apparatus |
| US5021121A (en) | 1990-02-16 | 1991-06-04 | Applied Materials, Inc. | Process for RIE etching silicon dioxide |
| US5013398A (en) | 1990-05-29 | 1991-05-07 | Micron Technology, Inc. | Anisotropic etch method for a sandwich structure |
| US5022958A (en) | 1990-06-27 | 1991-06-11 | At&T Bell Laboratories | Method of etching for integrated circuits with planarized dielectric |
| US6171974B1 (en) * | 1991-06-27 | 2001-01-09 | Applied Materials, Inc. | High selectivity oxide etch process for integrated circuit structures |
| US6238588B1 (en) * | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
| US5269879A (en) | 1991-10-16 | 1993-12-14 | Lam Research Corporation | Method of etching vias without sputtering of underlying electrically conductive layer |
| JPH06188229A (ja) * | 1992-12-16 | 1994-07-08 | Tokyo Electron Yamanashi Kk | エッチングの後処理方法 |
| JP3271359B2 (ja) * | 1993-02-25 | 2002-04-02 | ソニー株式会社 | ドライエッチング方法 |
| JP3252518B2 (ja) * | 1993-03-19 | 2002-02-04 | ソニー株式会社 | ドライエッチング方法 |
| US5770098A (en) | 1993-03-19 | 1998-06-23 | Tokyo Electron Kabushiki Kaisha | Etching process |
| KR100264445B1 (ko) | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | 플라즈마처리장치 |
| JPH07161702A (ja) | 1993-10-29 | 1995-06-23 | Applied Materials Inc | 酸化物のプラズマエッチング方法 |
| US5736457A (en) | 1994-12-09 | 1998-04-07 | Sematech | Method of making a damascene metallization |
| JP3778299B2 (ja) | 1995-02-07 | 2006-05-24 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US5626716A (en) | 1995-09-29 | 1997-05-06 | Lam Research Corporation | Plasma etching of semiconductors |
| US5843847A (en) * | 1996-04-29 | 1998-12-01 | Applied Materials, Inc. | Method for etching dielectric layers with high selectivity and low microloading |
| JP3319285B2 (ja) * | 1996-06-05 | 2002-08-26 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
| JP3862035B2 (ja) * | 1996-07-17 | 2006-12-27 | ソニー株式会社 | 半導体装置およびその製造方法 |
| JP3997494B2 (ja) * | 1996-09-17 | 2007-10-24 | ソニー株式会社 | 半導体装置 |
| EP0945896B1 (en) * | 1996-10-11 | 2005-08-10 | Tokyo Electron Limited | Plasma etching method |
| JP3713869B2 (ja) * | 1997-02-17 | 2005-11-09 | ソニー株式会社 | 半導体装置の製造方法 |
| US5972235A (en) * | 1997-02-28 | 1999-10-26 | Candescent Technologies Corporation | Plasma etching using polycarbonate mask and low pressure-high density plasma |
| US5780338A (en) | 1997-04-11 | 1998-07-14 | Vanguard International Semiconductor Corporation | Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits |
| GB9712019D0 (en) * | 1997-06-09 | 1997-08-06 | Northern Telecom Ltd | Eye measurement of optical sampling |
| US6051504A (en) | 1997-08-15 | 2000-04-18 | International Business Machines Corporation | Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma |
-
1998
- 1998-09-30 US US09/163,301 patent/US6297163B1/en not_active Expired - Lifetime
-
1999
- 1999-09-24 EP EP99949628A patent/EP1121714A1/en not_active Withdrawn
- 1999-09-24 WO PCT/US1999/020888 patent/WO2000019506A1/en not_active Ceased
- 1999-09-24 AU AU62463/99A patent/AU6246399A/en not_active Abandoned
- 1999-09-24 KR KR1020017004035A patent/KR20010082216A/ko not_active Ceased
- 1999-09-24 JP JP2000572915A patent/JP4499289B2/ja not_active Expired - Fee Related
-
2000
- 2000-01-13 TW TW088116761A patent/TW584672B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100434312B1 (ko) * | 2000-12-21 | 2004-06-05 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택홀 형성 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002526919A (ja) | 2002-08-20 |
| WO2000019506A1 (en) | 2000-04-06 |
| TW584672B (en) | 2004-04-21 |
| JP4499289B2 (ja) | 2010-07-07 |
| WO2000019506A9 (en) | 2000-08-31 |
| AU6246399A (en) | 2000-04-17 |
| US6297163B1 (en) | 2001-10-02 |
| EP1121714A1 (en) | 2001-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20010082216A (ko) | 유전체 재료 플라즈마 에칭 방법 | |
| US6670278B2 (en) | Method of plasma etching of silicon carbide | |
| US6962879B2 (en) | Method of plasma etching silicon nitride | |
| US6617257B2 (en) | Method of plasma etching organic antireflective coating | |
| US7166535B2 (en) | Plasma etching of silicon carbide | |
| KR100628932B1 (ko) | 불화탄소 가스를 사용하는 이산화 실리콘막의 에칭방법 | |
| US6630407B2 (en) | Plasma etching of organic antireflective coating | |
| WO2002080230A2 (en) | Method of plasma etching low-k organosilicate materials | |
| US6746961B2 (en) | Plasma etching of dielectric layer with etch profile control | |
| US20020142610A1 (en) | Plasma etching of dielectric layer with selectivity to stop layer | |
| US6136722A (en) | Plasma etching method for forming hole in masked silicon dioxide | |
| KR20010042983A (ko) | 고 종횡비 개구를 형성하는 방법 | |
| US7273566B2 (en) | Gas compositions | |
| WO2000039846A1 (en) | Method of etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry | |
| KR100702729B1 (ko) | 유도-연결된 플라즈마 공정 시스템에서 고애스펙트비의미세 접점 에칭 공정 | |
| US5908320A (en) | High selectivity BPSG:TiSi2 contact etch process | |
| KR20070020325A (ko) | 유전체 재료 플라즈마 에칭 방법 | |
| WO2025165448A1 (en) | Method for etching a pattern in a layer of a substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20010329 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20040918 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20060331 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20061114 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20060331 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
Patent event date: 20061212 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20061114 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20070730 Appeal identifier: 2006101010844 Request date: 20061212 |
|
| A107 | Divisional application of patent | ||
| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20070111 |
|
| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20061212 Effective date: 20070730 |
|
| PJ1301 | Trial decision |
Patent event code: PJ13011S01D Patent event date: 20070730 Comment text: Trial Decision on Objection to Decision on Refusal Appeal kind category: Appeal against decision to decline refusal Request date: 20061212 Decision date: 20070730 Appeal identifier: 2006101010844 |