KR20000038583A - 내부전압 발생장치 - Google Patents
내부전압 발생장치 Download PDFInfo
- Publication number
- KR20000038583A KR20000038583A KR1019980053638A KR19980053638A KR20000038583A KR 20000038583 A KR20000038583 A KR 20000038583A KR 1019980053638 A KR1019980053638 A KR 1019980053638A KR 19980053638 A KR19980053638 A KR 19980053638A KR 20000038583 A KR20000038583 A KR 20000038583A
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- internal
- output
- internal voltage
- drive transistor
- Prior art date
Links
- 238000010586 diagram Methods 0.000 description 17
- 239000000872 buffer Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
Description
Claims (4)
- 내부회로에 안정적인 동작전압을 인가하기 위한 내부전압 발생장치에 있어서,기준전압을 발생하는 기준전압 발생부와,상기 기준전압과 상기 내부회로에 입력되는 내부전압을 비교하는 비교부와,상기 비교부의 출력전압에 의해 제어되고 전원전압단과 상기 내부회로의 내부전압 입력단 사이에 연결된 제 1 스위칭소자와,상기 제 1 스위칭소자와 병렬적으로 구성되어 상기 전원전압단과 상기 내부회로의 내부전압 입력단 사이에 연결되는 제 2 스위칭소자와,동작모드 및 스탠바이 모드에 따라 상기 제 2 스위칭소자의 온/오프를 제어하여 상기 내부회로로 입력되는 내부전압의 레벨을 조절하는 내부전압 조절부를 포함하여 구성되는 것을 특징으로 하는 내부전압 발생장치.
- 제 1 항에 있어서, 상기 내부 전압 조절부는 상기 동작 모드 및 스탠바이 모드에 따라 로직 "0" 또는 "1"을 출력하는 디지탈 스위치 제어부를 더 포함하는 것을 특징으로 하는 내부전압 발생장치.
- 제 2 항에 있어서, 상기 디지탈 스위치 제어부의 출력 주기 또는 듀티(duty)비는 상기 전원전압의 크기에 따라 제한하는 것을 특징으로 하는 내부전압 발생장치.
- 제 1 항에 있어서, 상기 내부전압 조절부는 상기 디지탈 스위치 제어부의 출력과 상기 비교부의 출력을 입력하여 논리연산하는 논리연산부를 더 포함하여 상기 논리연산부의 출력 주기 또는 듀티(duty)비는 상기 전원전압의 크기에 따라 제한하는 것을 특징으로 하는 내부전압 발생장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980053638A KR100282437B1 (ko) | 1998-12-08 | 1998-12-08 | 내부전압 발생장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980053638A KR100282437B1 (ko) | 1998-12-08 | 1998-12-08 | 내부전압 발생장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000038583A true KR20000038583A (ko) | 2000-07-05 |
KR100282437B1 KR100282437B1 (ko) | 2001-02-15 |
Family
ID=19561793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980053638A KR100282437B1 (ko) | 1998-12-08 | 1998-12-08 | 내부전압 발생장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100282437B1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100452327B1 (ko) * | 2002-07-08 | 2004-10-12 | 삼성전자주식회사 | 반도체 메모리 장치의 내부 전원 전압 발생회로 |
KR100506108B1 (ko) * | 2001-09-21 | 2005-08-05 | 가부시끼가이샤 도시바 | 반도체 집적 회로 및 반도체 메모리 |
KR100733953B1 (ko) * | 2006-06-15 | 2007-06-29 | 삼성전자주식회사 | 플래시 메모리 장치의 전압 레귤레이터 |
US7928798B2 (en) | 2006-12-29 | 2011-04-19 | Hynix Semiconductor Inc. | Internal voltage generation device |
-
1998
- 1998-12-08 KR KR1019980053638A patent/KR100282437B1/ko not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506108B1 (ko) * | 2001-09-21 | 2005-08-05 | 가부시끼가이샤 도시바 | 반도체 집적 회로 및 반도체 메모리 |
KR100452327B1 (ko) * | 2002-07-08 | 2004-10-12 | 삼성전자주식회사 | 반도체 메모리 장치의 내부 전원 전압 발생회로 |
KR100733953B1 (ko) * | 2006-06-15 | 2007-06-29 | 삼성전자주식회사 | 플래시 메모리 장치의 전압 레귤레이터 |
US7928798B2 (en) | 2006-12-29 | 2011-04-19 | Hynix Semiconductor Inc. | Internal voltage generation device |
Also Published As
Publication number | Publication date |
---|---|
KR100282437B1 (ko) | 2001-02-15 |
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