KR102788584B1 - 수광 장치 및 수광 장치의 제조 방법, 전자 기기 - Google Patents
수광 장치 및 수광 장치의 제조 방법, 전자 기기 Download PDFInfo
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- KR102788584B1 KR102788584B1 KR1020237033726A KR20237033726A KR102788584B1 KR 102788584 B1 KR102788584 B1 KR 102788584B1 KR 1020237033726 A KR1020237033726 A KR 1020237033726A KR 20237033726 A KR20237033726 A KR 20237033726A KR 102788584 B1 KR102788584 B1 KR 102788584B1
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- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 238000003384 imaging method Methods 0.000 claims abstract description 157
- 239000000758 substrate Substances 0.000 claims abstract description 101
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- 238000012546 transfer Methods 0.000 claims description 41
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- 239000004020 conductor Substances 0.000 description 44
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- 238000006243 chemical reaction Methods 0.000 description 18
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
- H01L2224/081—Disposition
- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2012-159789 | 2012-07-18 | ||
| JP2012159789A JP2014022561A (ja) | 2012-07-18 | 2012-07-18 | 固体撮像装置、及び、電子機器 |
| KR1020237001153A KR102586248B1 (ko) | 2012-07-18 | 2013-07-08 | 수광 장치 및 수광 장치의 제조 방법, 전자 기기 |
| PCT/JP2013/004216 WO2014013696A1 (en) | 2012-07-18 | 2013-07-08 | Solid-state imaging device and electronic apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237001153A Division KR102586248B1 (ko) | 2012-07-18 | 2013-07-08 | 수광 장치 및 수광 장치의 제조 방법, 전자 기기 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20230145237A KR20230145237A (ko) | 2023-10-17 |
| KR102788584B1 true KR102788584B1 (ko) | 2025-03-31 |
Family
ID=48833021
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237033726A Active KR102788584B1 (ko) | 2012-07-18 | 2013-07-08 | 수광 장치 및 수광 장치의 제조 방법, 전자 기기 |
| KR1020217002560A Active KR102281407B1 (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 광 검출 장치 |
| KR1020237001153A Active KR102586248B1 (ko) | 2012-07-18 | 2013-07-08 | 수광 장치 및 수광 장치의 제조 방법, 전자 기기 |
| KR1020207016473A Active KR102270955B1 (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 전자기기 |
| KR1020217022449A Active KR102489178B1 (ko) | 2012-07-18 | 2013-07-08 | 수광 장치 및 수광 장치의 제조 방법, 전자 기기 |
| KR1020207022807A Active KR102217149B1 (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 전자기기 |
| KR1020197017296A Active KR102145138B1 (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 전자기기 |
| KR1020157000304A Ceased KR20150037812A (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 전자기기 |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217002560A Active KR102281407B1 (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 광 검출 장치 |
| KR1020237001153A Active KR102586248B1 (ko) | 2012-07-18 | 2013-07-08 | 수광 장치 및 수광 장치의 제조 방법, 전자 기기 |
| KR1020207016473A Active KR102270955B1 (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 전자기기 |
| KR1020217022449A Active KR102489178B1 (ko) | 2012-07-18 | 2013-07-08 | 수광 장치 및 수광 장치의 제조 방법, 전자 기기 |
| KR1020207022807A Active KR102217149B1 (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 전자기기 |
| KR1020197017296A Active KR102145138B1 (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 전자기기 |
| KR1020157000304A Ceased KR20150037812A (ko) | 2012-07-18 | 2013-07-08 | 고체 촬상장치 및 전자기기 |
Country Status (7)
| Country | Link |
|---|---|
| US (6) | US9508770B2 (enExample) |
| EP (4) | EP2859586B1 (enExample) |
| JP (1) | JP2014022561A (enExample) |
| KR (8) | KR102788584B1 (enExample) |
| CN (8) | CN116404018A (enExample) |
| TW (1) | TWI520320B (enExample) |
| WO (1) | WO2014013696A1 (enExample) |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8779592B2 (en) * | 2012-05-01 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via-free interconnect structure with self-aligned metal line interconnections |
| JP2014022561A (ja) * | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
| JP5813047B2 (ja) * | 2013-04-26 | 2015-11-17 | キヤノン株式会社 | 撮像装置、および、撮像システム。 |
| JP2015195235A (ja) * | 2014-03-31 | 2015-11-05 | ソニー株式会社 | 固体撮像素子、電子機器、および撮像方法 |
| TWI747805B (zh) * | 2014-10-08 | 2021-12-01 | 日商索尼半導體解決方案公司 | 攝像裝置及製造方法、以及電子機器 |
| KR102261268B1 (ko) | 2014-12-29 | 2021-06-09 | 삼성전자주식회사 | 이미지 센서 |
| KR102674335B1 (ko) * | 2015-02-27 | 2024-06-12 | 소니그룹주식회사 | 반도체 장치, 고체 촬상 소자, 촬상 장치 및 전자 기기 |
| JP6717290B2 (ja) * | 2015-03-03 | 2020-07-01 | ソニー株式会社 | 半導体装置、および電子機器 |
| TWI696278B (zh) | 2015-03-31 | 2020-06-11 | 日商新力股份有限公司 | 影像感測器、攝像裝置及電子機器 |
| US9848146B2 (en) * | 2015-04-23 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| CN107615481B (zh) * | 2015-05-18 | 2020-07-21 | 索尼公司 | 半导体装置和成像装置 |
| JP6562720B2 (ja) * | 2015-06-04 | 2019-08-21 | 三菱電機株式会社 | タッチスクリーン、タッチパネル、表示装置及び電子機器 |
| DE102015216527B3 (de) * | 2015-08-28 | 2016-10-27 | Siemens Healthcare Gmbh | Röntgendetektor mit kapazitätsoptimiertem, lichtdichtem Padaufbau und medizinisches Gerät mit diesem Röntgendetektor |
| FR3043495A1 (fr) * | 2015-11-09 | 2017-05-12 | St Microelectronics Crolles 2 Sas | Capteur d'images a obturation globale |
| CN107195645B (zh) | 2016-03-14 | 2023-10-03 | 松下知识产权经营株式会社 | 摄像装置 |
| CN108701697B (zh) | 2016-03-30 | 2022-12-16 | 索尼公司 | 固态图像传感器、固态图像传感器的制造方法以及电子设备 |
| JP6789653B2 (ja) * | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
| JP6856983B2 (ja) * | 2016-06-30 | 2021-04-14 | キヤノン株式会社 | 光電変換装置及びカメラ |
| US10490596B2 (en) * | 2016-11-30 | 2019-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for fabricating an image sensor |
| JP2018101699A (ja) * | 2016-12-20 | 2018-06-28 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、固体撮像装置の製造方法および電子機器 |
| US10375338B2 (en) * | 2017-02-01 | 2019-08-06 | Omnivision Technologies, Inc. | Two stage amplifier readout circuit in pixel level hybrid bond image sensors |
| JP6982977B2 (ja) * | 2017-04-24 | 2021-12-17 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP7171170B2 (ja) * | 2017-06-29 | 2022-11-15 | キヤノン株式会社 | 撮像装置、撮像システム、移動体、撮像装置の製造方法 |
| CN107564927A (zh) * | 2017-09-19 | 2018-01-09 | 德淮半导体有限公司 | 图像传感器及其制作方法 |
| JP7148780B2 (ja) * | 2017-09-29 | 2022-10-06 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
| WO2019130702A1 (ja) * | 2017-12-27 | 2019-07-04 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP7267940B2 (ja) * | 2018-02-01 | 2023-05-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| JP7353729B2 (ja) | 2018-02-09 | 2023-10-02 | キヤノン株式会社 | 半導体装置、半導体装置の製造方法 |
| EP3796387B1 (en) | 2018-05-16 | 2025-10-29 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and solid-state imaging device |
| TWI888349B (zh) | 2018-06-05 | 2025-07-01 | 日商索尼半導體解決方案公司 | 固體攝像裝置、固體攝像裝置之製造方法及電子機器 |
| TWI840383B (zh) * | 2018-07-26 | 2024-05-01 | 日商索尼半導體解決方案公司 | 固體攝像裝置 |
| DE112019005071T5 (de) * | 2018-10-12 | 2021-07-15 | Sony Semiconductor Solutions Corporation | Halbleitervorrichtung und festkörperbildsensor |
| TWI848008B (zh) * | 2018-10-17 | 2024-07-11 | 日商索尼半導體解決方案公司 | 攝像元件及電子機器 |
| JP7452962B2 (ja) | 2018-11-16 | 2024-03-19 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JP2020096225A (ja) * | 2018-12-10 | 2020-06-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
| US11984466B2 (en) | 2018-12-13 | 2024-05-14 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and video recording apparatus |
| US12119359B2 (en) | 2018-12-20 | 2024-10-15 | Sony Semiconductor Solutions Corporation | Imaging device |
| WO2020170936A1 (ja) * | 2019-02-20 | 2020-08-27 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| US12142626B2 (en) * | 2019-02-28 | 2024-11-12 | Sony Semiconductor Solutions Corporation | Image sensor |
| TW202101527A (zh) * | 2019-03-15 | 2021-01-01 | 日商索尼半導體解決方案公司 | 攝像裝置及攝像裝置之製造方法以及半導體裝置 |
| TWI860337B (zh) | 2019-03-15 | 2024-11-01 | 日商索尼半導體解決方案公司 | 攝像元件及半導體元件 |
| KR102776686B1 (ko) * | 2019-03-29 | 2025-03-07 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 장치 |
| TWI872085B (zh) * | 2019-06-26 | 2025-02-11 | 日商索尼半導體解決方案公司 | 攝像裝置 |
| TWI868171B (zh) * | 2019-06-26 | 2025-01-01 | 日商索尼半導體解決方案公司 | 攝像裝置 |
| TWI888385B (zh) * | 2019-06-26 | 2025-07-01 | 日商索尼半導體解決方案公司 | 攝像裝置 |
| DE112020003071T5 (de) * | 2019-06-26 | 2022-03-10 | Sony Semiconductor Solutions Corporation | Festkörper-bildgebungsvorrichtung |
| KR102806487B1 (ko) * | 2019-06-26 | 2025-05-13 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 장치 |
| US11973102B2 (en) | 2019-11-29 | 2024-04-30 | Sony Semiconductor Solutions Corporation | Imaging device and electronic apparatus |
| KR102818658B1 (ko) * | 2020-05-29 | 2025-06-11 | 삼성전자주식회사 | 이미지 센서 |
| KR102889665B1 (ko) * | 2020-06-04 | 2025-11-21 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
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