KR102779246B1 - 성막 장치, 성막 장치의 제어 장치 및 성막 방법 - Google Patents

성막 장치, 성막 장치의 제어 장치 및 성막 방법 Download PDF

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KR102779246B1
KR102779246B1 KR1020227030318A KR20227030318A KR102779246B1 KR 102779246 B1 KR102779246 B1 KR 102779246B1 KR 1020227030318 A KR1020227030318 A KR 1020227030318A KR 20227030318 A KR20227030318 A KR 20227030318A KR 102779246 B1 KR102779246 B1 KR 102779246B1
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film
room
substrate
gas
process room
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KR20220136402A (ko
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히로시 야쿠시지
레이지 사카모토
마사히로 시바모토
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캐논 아네르바 가부시키가이샤
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Priority to KR1020257007394A priority Critical patent/KR20250036964A/ko
Priority claimed from PCT/JP2020/041999 external-priority patent/WO2021199479A1/ja
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/5833Ion beam bombardment
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
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    • C23C14/3442Applying energy to the substrate during sputtering using an ion beam
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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
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    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
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    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32871Means for trapping or directing unwanted particles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physical Vapour Deposition (AREA)
KR1020227030318A 2020-04-01 2020-11-11 성막 장치, 성막 장치의 제어 장치 및 성막 방법 Active KR102779246B1 (ko)

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Application Number Priority Date Filing Date Title
KR1020257007394A KR20250036964A (ko) 2020-04-01 2020-11-11 성막 장치, 성막 장치의 제어 장치 및 성막 방법

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JPJP-P-2020-065522 2020-04-01
JP2020065522 2020-04-01
PCT/JP2020/041999 WO2021199479A1 (ja) 2020-04-01 2020-11-11 成膜装置、成膜装置の制御装置及び成膜方法

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KR102779246B1 true KR102779246B1 (ko) 2025-03-12

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US (1) US12606904B2 (https=)
JP (1) JP6932873B1 (https=)
KR (2) KR102779246B1 (https=)
CN (2) CN117535632A (https=)

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US11710707B2 (en) * 2020-03-26 2023-07-25 Shibaura Mechatronics Corporation Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method
WO2021199479A1 (ja) * 2020-04-01 2021-10-07 キヤノンアネルバ株式会社 成膜装置、成膜装置の制御装置及び成膜方法
KR102799065B1 (ko) 2021-05-18 2025-04-23 캐논 아네르바 가부시키가이샤 적층체 및 적층체의 제조 방법

Citations (1)

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Publication number Priority date Publication date Assignee Title
WO2016056275A1 (ja) * 2014-10-10 2016-04-14 キヤノンアネルバ株式会社 成膜装置

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US4244798A (en) * 1979-10-29 1981-01-13 General Motors Corporation Exhaust electrode process for exhaust gas oxygen sensor
JPH0250959A (ja) 1988-08-10 1990-02-20 Nok Corp 希土類金属薄膜の製膜方法および製膜装置
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