CN117535632A - 成膜设备、控制设备以及成膜方法 - Google Patents

成膜设备、控制设备以及成膜方法 Download PDF

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Publication number
CN117535632A
CN117535632A CN202311487538.5A CN202311487538A CN117535632A CN 117535632 A CN117535632 A CN 117535632A CN 202311487538 A CN202311487538 A CN 202311487538A CN 117535632 A CN117535632 A CN 117535632A
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process chamber
film
film forming
substrate
gas
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CN202311487538.5A
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English (en)
Chinese (zh)
Inventor
药师神弘士
坂本怜士
芝本雅弘
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Canon Anelva Corp
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Canon Anelva Corp
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Priority claimed from PCT/JP2020/041999 external-priority patent/WO2021199479A1/ja
Publication of CN117535632A publication Critical patent/CN117535632A/zh
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5826Treatment with charged particles
    • C23C14/5833Ion beam bombardment
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
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    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/34Sputtering
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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3435Applying energy to the substrate during sputtering
    • C23C14/3442Applying energy to the substrate during sputtering using an ion beam
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/3464Sputtering using more than one target
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/46Sputtering by ion beam produced by an external ion source
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5873Removal of material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32871Means for trapping or directing unwanted particles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physical Vapour Deposition (AREA)
CN202311487538.5A 2020-04-01 2020-11-11 成膜设备、控制设备以及成膜方法 Pending CN117535632A (zh)

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Application Number Priority Date Filing Date Title
JP2020-065522 2020-04-01
JP2020065522 2020-04-01
CN202080099470.1A CN115427606B (zh) 2020-04-01 2020-11-11 成膜设备、成膜设备的控制设备以及成膜方法
PCT/JP2020/041999 WO2021199479A1 (ja) 2020-04-01 2020-11-11 成膜装置、成膜装置の制御装置及び成膜方法

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US11710707B2 (en) * 2020-03-26 2023-07-25 Shibaura Mechatronics Corporation Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method
WO2021199479A1 (ja) * 2020-04-01 2021-10-07 キヤノンアネルバ株式会社 成膜装置、成膜装置の制御装置及び成膜方法
KR102799065B1 (ko) 2021-05-18 2025-04-23 캐논 아네르바 가부시키가이샤 적층체 및 적층체의 제조 방법

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CN1938448A (zh) * 2004-03-15 2007-03-28 伊菲雷技术公司 真空沉积硫化物薄膜期间吸收氧气和水的方法
JP2011195850A (ja) * 2010-03-17 2011-10-06 Fujifilm Corp 成膜方法およびガスバリアフィルム
CN104350174A (zh) * 2012-05-31 2015-02-11 东京毅力科创株式会社 真空处理装置、真空处理方法和存储介质
CN106795626A (zh) * 2014-10-10 2017-05-31 佳能安内华股份有限公司 成膜装置
CN108300968A (zh) * 2017-01-11 2018-07-20 株式会社爱发科 成膜方法及真空处理装置

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US4244798A (en) * 1979-10-29 1981-01-13 General Motors Corporation Exhaust electrode process for exhaust gas oxygen sensor
JPH0250959A (ja) 1988-08-10 1990-02-20 Nok Corp 希土類金属薄膜の製膜方法および製膜装置
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