KR102727771B1 - 후방-조명되는 센서 및 센서를 제조하는 방법 - Google Patents
후방-조명되는 센서 및 센서를 제조하는 방법 Download PDFInfo
- Publication number
- KR102727771B1 KR102727771B1 KR1020217021571A KR20217021571A KR102727771B1 KR 102727771 B1 KR102727771 B1 KR 102727771B1 KR 1020217021571 A KR1020217021571 A KR 1020217021571A KR 20217021571 A KR20217021571 A KR 20217021571A KR 102727771 B1 KR102727771 B1 KR 102727771B1
- Authority
- KR
- South Korea
- Prior art keywords
- epitaxial layer
- layer
- image sensor
- type dopant
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910052796 boron Inorganic materials 0.000 claims abstract description 85
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 84
- 239000002019 doping agent Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 230000005855 radiation Effects 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 262
- 238000000034 method Methods 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 abstract description 14
- 238000001514 detection method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 71
- 239000010703 silicon Substances 0.000 description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 70
- 235000012431 wafers Nutrition 0.000 description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 13
- 238000007689 inspection Methods 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Classifications
-
- H01L27/14683—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H01L27/14601—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862778445P | 2018-12-12 | 2018-12-12 | |
| US62/778,445 | 2018-12-12 | ||
| US16/562,396 US11114491B2 (en) | 2018-12-12 | 2019-09-05 | Back-illuminated sensor and a method of manufacturing a sensor |
| US16/562,396 | 2019-09-05 | ||
| PCT/US2019/065575 WO2020123571A1 (en) | 2018-12-12 | 2019-12-11 | Back-illuminated sensor and a method of manufacturing a sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210091349A KR20210091349A (ko) | 2021-07-21 |
| KR102727771B1 true KR102727771B1 (ko) | 2024-11-07 |
Family
ID=71072930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217021571A Active KR102727771B1 (ko) | 2018-12-12 | 2019-12-11 | 후방-조명되는 센서 및 센서를 제조하는 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11114491B2 (https=) |
| EP (1) | EP3895215B1 (https=) |
| JP (1) | JP7616998B2 (https=) |
| KR (1) | KR102727771B1 (https=) |
| CN (1) | CN113169201B (https=) |
| IL (1) | IL283238B2 (https=) |
| TW (1) | TWI814961B (https=) |
| WO (1) | WO2020123571A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12613197B2 (en) | 2019-12-03 | 2026-04-28 | Kla Corporation | Low-reflectivity back-illuminated image sensor |
| WO2021108921A1 (en) * | 2019-12-05 | 2021-06-10 | Aurora Solar Technologies (Canada) Inc. | Systems and methods of characterizing semiconductor materials |
| US11848350B2 (en) * | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
| WO2022133642A1 (zh) * | 2020-12-21 | 2022-06-30 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构的形成方法 |
| US12015046B2 (en) * | 2021-02-05 | 2024-06-18 | Kla Corporation | Back-illuminated sensor with boron layer deposited using plasma atomic layer deposition |
| US20240243143A1 (en) * | 2023-01-12 | 2024-07-18 | Kla Corporation | Boron-Coated Back-Illuminated Image Sensor With Fluoride-Based Anti-Reflection Coating |
| US12610640B2 (en) * | 2023-10-31 | 2026-04-21 | Kla Corporation | Back-illuminated sensor and method of making same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010093229A (ja) * | 2008-09-10 | 2010-04-22 | Sony Corp | 固体撮像装置の製造方法、固体撮像装置および固体撮像装置の製造基板 |
| JP2017509142A (ja) * | 2014-01-10 | 2017-03-30 | ケーエルエー−テンカー コーポレイション | 裏面照射型センサのための反射防止層 |
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| US11114491B2 (en) | 2021-09-07 |
| US20200194476A1 (en) | 2020-06-18 |
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