KR102675995B1 - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기 Download PDF

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Publication number
KR102675995B1
KR102675995B1 KR1020237002324A KR20237002324A KR102675995B1 KR 102675995 B1 KR102675995 B1 KR 102675995B1 KR 1020237002324 A KR1020237002324 A KR 1020237002324A KR 20237002324 A KR20237002324 A KR 20237002324A KR 102675995 B1 KR102675995 B1 KR 102675995B1
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South Korea
Prior art keywords
transistor
imaging device
group
solid
state imaging
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Korean (ko)
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KR20230019213A (ko
Inventor
나나코 카토
토시후미 와카노
유스케 오타케
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소니그룹주식회사
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Classifications

    • H01L27/14643—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H01L27/14609—
    • H01L27/14641—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020237002324A 2014-02-28 2015-02-20 촬상 장치 및 전자 기기 Active KR102675995B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247019601A KR102828652B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014038584A JP6334203B2 (ja) 2014-02-28 2014-02-28 固体撮像装置、および電子機器
JPJP-P-2014-038584 2014-02-28
KR1020227007266A KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
PCT/JP2015/000821 WO2015129226A1 (en) 2014-02-28 2015-02-20 Imaging device and electronic apparatus

Related Parent Applications (1)

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KR1020227007266A Division KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

Related Child Applications (1)

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KR1020247019601A Division KR102828652B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

Publications (2)

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KR20230019213A KR20230019213A (ko) 2023-02-07
KR102675995B1 true KR102675995B1 (ko) 2024-06-18

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KR1020237002324A Active KR102675995B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020227007266A Active KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020247019601A Active KR102828652B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020167022090A Active KR102386941B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

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KR1020227007266A Active KR102492853B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020247019601A Active KR102828652B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기
KR1020167022090A Active KR102386941B1 (ko) 2014-02-28 2015-02-20 촬상 장치 및 전자 기기

Country Status (7)

Country Link
US (4) US10075659B2 (https=)
EP (2) EP3111631B1 (https=)
JP (1) JP6334203B2 (https=)
KR (4) KR102675995B1 (https=)
CN (2) CN111312736B (https=)
TW (1) TWI653891B (https=)
WO (1) WO2015129226A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6334203B2 (ja) 2014-02-28 2018-05-30 ソニー株式会社 固体撮像装置、および電子機器
TWI696278B (zh) 2015-03-31 2020-06-11 日商新力股份有限公司 影像感測器、攝像裝置及電子機器
JP6491519B2 (ja) * 2015-04-02 2019-03-27 キヤノン株式会社 撮像素子及び撮像装置
KR102541701B1 (ko) 2016-01-15 2023-06-13 삼성전자주식회사 씨모스 이미지 센서
EP3516691B1 (en) 2016-10-14 2021-09-22 Huawei Technologies Co., Ltd. Cmos image sensor
KR102717094B1 (ko) 2016-12-27 2024-10-15 삼성전자주식회사 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
KR102701855B1 (ko) 2016-12-28 2024-09-02 삼성전자주식회사 이미지 센서
KR102333610B1 (ko) * 2017-03-06 2021-12-03 에스케이하이닉스 주식회사 이미지 센서
KR102380819B1 (ko) * 2017-04-12 2022-03-31 삼성전자주식회사 이미지 센서
JP2018207291A (ja) 2017-06-05 2018-12-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および撮像装置
KR102356913B1 (ko) * 2017-07-03 2022-02-03 에스케이하이닉스 주식회사 이미지 센서
KR102568744B1 (ko) * 2018-01-29 2023-08-22 에스케이하이닉스 주식회사 이미지 센서
KR102551862B1 (ko) 2018-01-29 2023-07-06 에스케이하이닉스 주식회사 이미지 센서
JP7086783B2 (ja) 2018-08-13 2022-06-20 株式会社東芝 固体撮像装置
TWI887068B (zh) 2018-10-17 2025-06-11 日商索尼半導體解決方案公司 攝像元件及電子機器
CN110809823B (zh) * 2019-09-30 2021-10-29 深圳市汇顶科技股份有限公司 图像传感器的半导体结构、芯片及电子装置
US12375833B2 (en) * 2020-06-09 2025-07-29 Sony Semiconductor Solutions Corporation Solid-state imaging device
CN114697579B (zh) * 2020-12-31 2024-11-12 思特威(上海)电子科技股份有限公司 应用于自动对焦的共享像素结构及图像传感器件
US12274099B2 (en) * 2021-03-31 2025-04-08 Apple Inc. Dual embedded storage nodes and vertical transfer gates for pixels of global shutter image sensors
JP2025125684A (ja) * 2024-02-16 2025-08-28 ソニーセミコンダクタソリューションズ株式会社 光検出装置、電子機器

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657665B1 (en) 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
JP4123415B2 (ja) 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
US20050128327A1 (en) * 2003-12-10 2005-06-16 Bencuya Selim S. Device and method for image sensing
US7635880B2 (en) * 2004-12-30 2009-12-22 Ess Technology, Inc. Method and apparatus for proximate CMOS pixels
JP2007095917A (ja) * 2005-09-28 2007-04-12 Matsushita Electric Ind Co Ltd 固体撮像装置
JP4752447B2 (ja) 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
US20070131992A1 (en) * 2005-12-13 2007-06-14 Dialog Semiconductor Gmbh Multiple photosensor pixel image sensor
JP4350768B2 (ja) * 2007-04-16 2009-10-21 キヤノン株式会社 光電変換装置及び撮像装置
US7964929B2 (en) * 2007-08-23 2011-06-21 Aptina Imaging Corporation Method and apparatus providing imager pixels with shared pixel components
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
JP5292787B2 (ja) * 2007-11-30 2013-09-18 ソニー株式会社 固体撮像装置及びカメラ
JP4630907B2 (ja) * 2008-03-03 2011-02-09 シャープ株式会社 固体撮像装置および電子情報機器
JP5178266B2 (ja) * 2008-03-19 2013-04-10 キヤノン株式会社 固体撮像装置
JP5188275B2 (ja) * 2008-06-06 2013-04-24 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム
JP2009302483A (ja) * 2008-06-17 2009-12-24 Panasonic Corp 固体撮像装置及びその製造方法
US20100230583A1 (en) * 2008-11-06 2010-09-16 Sony Corporation Solid state image pickup device, method of manufacturing the same, image pickup device, and electronic device
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
TWI425629B (zh) * 2009-03-30 2014-02-01 Sony Corp 固態影像拾取裝置及其製造方法，影像拾取裝置及電子裝置
TWI411102B (zh) * 2009-03-31 2013-10-01 Sony Corp 固態成像元件及成像裝置
JP5564874B2 (ja) * 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
JP2011114324A (ja) * 2009-11-30 2011-06-09 Sony Corp 固体撮像装置及び電子機器
JP5564909B2 (ja) 2009-11-30 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5537172B2 (ja) * 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器
JP6003291B2 (ja) 2011-08-22 2016-10-05 ソニー株式会社 固体撮像装置及び電子機器
JP6026102B2 (ja) * 2011-12-07 2016-11-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JP5764783B2 (ja) * 2012-04-19 2015-08-19 国立大学法人東北大学 固体撮像装置
US9305949B2 (en) * 2013-11-01 2016-04-05 Omnivision Technologies, Inc. Big-small pixel scheme for image sensors
JP6334203B2 (ja) * 2014-02-28 2018-05-30 ソニー株式会社 固体撮像装置、および電子機器
TWI696278B (zh) * 2015-03-31 2020-06-11 日商新力股份有限公司 影像感測器、攝像裝置及電子機器
KR102677080B1 (ko) * 2016-12-29 2024-06-24 삼성전자주식회사 이미지 센서 및 그 이미지 센서를 구비한 전자 장치
KR102638779B1 (ko) * 2017-01-03 2024-02-22 삼성전자주식회사 이미지 센서
JP6964479B2 (ja) 2017-10-03 2021-11-10 エヌ・イーケムキャット株式会社 希土類元素骨格置換ゼオライト及びその製造方法、並びにこれらを用いたＮＯｘ吸着材、選択的還元触媒及び自動車排ガス触媒

Also Published As

Publication number Publication date
KR102492853B1 (ko) 2023-01-31
US20230247317A1 (en) 2023-08-03
KR102828652B1 (ko) 2025-07-04
TWI653891B (zh) 2019-03-11
US11683601B2 (en) 2023-06-20
JP2015162646A (ja) 2015-09-07
CN111312736B (zh) 2023-10-24
KR20220034926A (ko) 2022-03-18
US20200366856A1 (en) 2020-11-19
TW201534121A (zh) 2015-09-01
EP3111631B1 (en) 2019-04-03
KR20230019213A (ko) 2023-02-07
CN106030804B (zh) 2020-03-20
EP3518518B1 (en) 2020-08-12
KR20240096885A (ko) 2024-06-26
CN111312736A (zh) 2020-06-19
KR102386941B1 (ko) 2022-04-15
WO2015129226A1 (en) 2015-09-03
EP3518518A1 (en) 2019-07-31
US20170013211A1 (en) 2017-01-12
US20190007631A1 (en) 2019-01-03
KR20160127730A (ko) 2016-11-04
JP6334203B2 (ja) 2018-05-30
EP3111631A1 (en) 2017-01-04
US10075659B2 (en) 2018-09-11
US11044428B2 (en) 2021-06-22
US12096142B2 (en) 2024-09-17
CN106030804A (zh) 2016-10-12

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