KR102638814B1 - 기판 처리 방법 및 기판 처리 장치 - Google Patents
기판 처리 방법 및 기판 처리 장치 Download PDFInfo
- Publication number
- KR102638814B1 KR102638814B1 KR1020217033017A KR20217033017A KR102638814B1 KR 102638814 B1 KR102638814 B1 KR 102638814B1 KR 1020217033017 A KR1020217033017 A KR 1020217033017A KR 20217033017 A KR20217033017 A KR 20217033017A KR 102638814 B1 KR102638814 B1 KR 102638814B1
- Authority
- KR
- South Korea
- Prior art keywords
- liquid
- substrate
- film
- rinse
- nozzle
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 869
- 238000012545 processing Methods 0.000 title claims description 123
- 238000003672 processing method Methods 0.000 title claims description 13
- 239000007788 liquid Substances 0.000 claims abstract description 1152
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 98
- 238000009835 boiling Methods 0.000 claims abstract description 50
- 230000005484 gravity Effects 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 135
- 238000010438 heat treatment Methods 0.000 claims description 48
- 238000001035 drying Methods 0.000 claims description 41
- 239000012530 fluid Substances 0.000 claims description 40
- 230000002093 peripheral effect Effects 0.000 claims description 34
- 238000007599 discharging Methods 0.000 claims description 24
- 238000006073 displacement reaction Methods 0.000 claims description 23
- 238000006467 substitution reaction Methods 0.000 claims description 16
- 238000009833 condensation Methods 0.000 claims description 7
- 230000005494 condensation Effects 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 description 80
- 239000007789 gas Substances 0.000 description 57
- 239000000126 substance Substances 0.000 description 55
- 238000010586 diagram Methods 0.000 description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 41
- 229910001873 dinitrogen Inorganic materials 0.000 description 41
- 239000002585 base Substances 0.000 description 35
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 30
- 239000011261 inert gas Substances 0.000 description 16
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000002438 flame photometric detection Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000012946 outsourcing Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2019-079465 | 2019-04-18 | ||
JP2019079465A JP7208091B2 (ja) | 2019-04-18 | 2019-04-18 | 基板処理方法および基板処理装置 |
PCT/JP2020/015689 WO2020213481A1 (ja) | 2019-04-18 | 2020-04-07 | 基板処理方法および基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20210137182A KR20210137182A (ko) | 2021-11-17 |
KR102638814B1 true KR102638814B1 (ko) | 2024-02-20 |
Family
ID=72837785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020217033017A KR102638814B1 (ko) | 2019-04-18 | 2020-04-07 | 기판 처리 방법 및 기판 처리 장치 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7208091B2 (ja) |
KR (1) | KR102638814B1 (ja) |
CN (1) | CN113728416A (ja) |
TW (1) | TWI799695B (ja) |
WO (1) | WO2020213481A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7301662B2 (ja) | 2019-07-29 | 2023-07-03 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2022178469A (ja) * | 2021-05-20 | 2022-12-02 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010050143A (ja) * | 2008-08-19 | 2010-03-04 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP2017117954A (ja) | 2015-12-24 | 2017-06-29 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2018026402A (ja) * | 2016-08-08 | 2018-02-15 | 東京エレクトロン株式会社 | 液処理方法、基板処理装置及び記憶媒体 |
JP2018164058A (ja) | 2017-03-27 | 2018-10-18 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4767767B2 (ja) * | 2006-06-19 | 2011-09-07 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4763563B2 (ja) * | 2006-09-20 | 2011-08-31 | 大日本スクリーン製造株式会社 | 基板処理方法 |
JP5043406B2 (ja) | 2006-11-21 | 2012-10-10 | 大日本スクリーン製造株式会社 | 基板乾燥方法および基板乾燥装置 |
JP6521242B2 (ja) * | 2015-06-16 | 2019-05-29 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US10546762B2 (en) * | 2016-11-18 | 2020-01-28 | Applied Materials, Inc. | Drying high aspect ratio features |
-
2019
- 2019-04-18 JP JP2019079465A patent/JP7208091B2/ja active Active
-
2020
- 2020-04-07 WO PCT/JP2020/015689 patent/WO2020213481A1/ja active Application Filing
- 2020-04-07 KR KR1020217033017A patent/KR102638814B1/ko active IP Right Grant
- 2020-04-07 CN CN202080028876.0A patent/CN113728416A/zh active Pending
- 2020-04-17 TW TW109112893A patent/TWI799695B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010050143A (ja) * | 2008-08-19 | 2010-03-04 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP2017117954A (ja) | 2015-12-24 | 2017-06-29 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2018026402A (ja) * | 2016-08-08 | 2018-02-15 | 東京エレクトロン株式会社 | 液処理方法、基板処理装置及び記憶媒体 |
JP2018164058A (ja) | 2017-03-27 | 2018-10-18 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2020213481A1 (ja) | 2020-10-22 |
JP2020178046A (ja) | 2020-10-29 |
CN113728416A (zh) | 2021-11-30 |
TWI799695B (zh) | 2023-04-21 |
TW202102314A (zh) | 2021-01-16 |
KR20210137182A (ko) | 2021-11-17 |
JP7208091B2 (ja) | 2023-01-18 |
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GRNT | Written decision to grant |