KR102638814B1 - Substrate processing method and substrate processing device - Google Patents

Abstract

A rinse liquid containing water is supplied to the upper surface of the substrate. The rinse liquid on the upper surface of the substrate is replaced with the first liquid. The first liquid on the upper surface of the substrate is replaced with the second liquid. By removing the second liquid on the top surface of the substrate, the substrate is dried. The solubility of the second liquid in water is less than the solubility of the first liquid in water. The surface tension of the second liquid is lower than the surface tension of the first liquid. The specific gravity of the second liquid is greater than that of the first liquid. The boiling point of the second liquid is above room temperature, and the value obtained by subtracting room temperature from the boiling point of the second liquid is below room temperature.

Description

Substrate processing method and substrate processing device

This application claims priority based on Japanese Patent Application No. 2019-079465 filed on April 18, 2019, and the entire contents of this application are hereby incorporated by reference.

The present invention relates to a substrate processing method and substrate processing apparatus for drying a substrate. Substrates include, for example, semiconductor wafers, substrates for FPD (Flat Panel Display) such as liquid crystal displays and organic EL (electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, and photomasks. These include substrates for solar cells, ceramic substrates, and solar cell substrates.

In the manufacturing process of semiconductor devices, FPDs, etc., necessary processing is performed on substrates such as semiconductor wafers and glass substrates for FPDs. This processing includes supplying a processing liquid such as a chemical liquid or a rinse liquid to the substrate. After the processing liquid is supplied, the processing liquid is removed from the substrate, and the substrate is dried. Patent Document 1 and Patent Document 2 disclose supplying a chemical solution, pure water, IPA (isopropyl alcohol), and HFE (hydrofluoroether) to a substrate in this order, and then drying the substrate.

In paragraph 0021 of Patent Document 1, as the “HFE liquid,” for example, HFE of the Novek (registered trademark) series manufactured by Sumitomo 3M Co., Ltd. can be used. Specifically, as HFE, for example, Novec 7100/7100DL (chemical formula: C ₄ F ₉ OCH ₃ ), Novec 7200 (chemical formula: C ₄ F ₉ OC ₂ H ₅ ), Novec 7300 (chemical formula: C ₆ F ₁₃ OCH) ₃ ), etc. can be used.” Paragraph 0059 of Patent Document 1 states, “For example, HFE71IPA (hydrofluoroether azeotropic mixture) of the Novec (registered trademark) series manufactured by Sumitomo 3M Co., Ltd. may be used.” In Patent Document 2, the type of HFE is not specified.

Japanese Patent Publication No. 2010-50143 Japanese Patent Publication No. 2008-128567

Removing the liquid adhering to the substrate immediately before drying in a short period of time is very important in suppressing pattern collapse. This is because if the liquid is removed from the substrate in a short period of time, the time for which the collapsing force that causes the pattern to collapse can be applied to the pattern can be shortened. The boiling point of Novec 7100 described in Patent Document 1 is 61°C, which is relatively low. However, according to research by the present inventors, it was found that even if a liquid with such a boiling point was used, the collapse of the pattern could not be sufficiently suppressed, depending on the strength of the pattern.

Therefore, one object of the present invention is to provide a substrate processing method and substrate processing apparatus that can dry a substrate while suppressing pattern collapse.

One embodiment of the present invention is a method of drying a substrate while maintaining the substrate horizontally, comprising: a rinse liquid supply step of supplying a rinse liquid containing water to the upper surface of the substrate; and a rinse liquid supply step of supplying a rinse liquid containing water to the upper surface of the substrate. A first substitution process of replacing the rinse liquid on the upper surface of the substrate with the first liquid by supplying a second liquid to the upper surface of the substrate, thereby replacing the first liquid on the upper surface of the substrate with the first liquid. A second substitution process for replacing the second liquid with a second liquid, and a drying process for drying the substrate by removing the second liquid on the upper surface of the substrate, wherein the solubility of the second liquid in water is the value in water. is less than the solubility of the first liquid, the surface tension of the second liquid is lower than the surface tension of the first liquid, the specific gravity of the second liquid is greater than the specific gravity of the first liquid, and the boiling point of the second liquid is (Boiling point at 1 atm. Hereinafter the same.) is equal to or higher than room temperature, and a value obtained by subtracting the room temperature from the boiling point of the second liquid is equal to or lower than the room temperature.

According to this method, a rinse liquid containing water is supplied to the upper surface of a substrate held horizontally. Thereafter, the first liquid is supplied to the upper surface of the substrate held horizontally. As a result, the rinse liquid on the upper surface of the substrate is replaced with the first liquid. Thereafter, the second liquid is supplied to the upper surface of the substrate held horizontally. Thereby, the first liquid on the upper surface of the substrate is replaced by the second liquid. Accordingly, the rinse liquid is replaced with the second liquid step by step. Thereafter, the second liquid is removed from the upper surface of the substrate, and the substrate is dried.

The rinse liquid on the substrate is not directly replaced with the second liquid, but is replaced with the first liquid and then replaced with the second liquid. The solubility of the second liquid in water is less than the solubility of the first liquid in water. In short, the second liquid has a lower affinity for water than the first liquid. When the second liquid is supplied to the upper surface of the substrate on which the rinse liquid is held, the rinse liquid may remain on the upper surface of the substrate. If the remaining amount of rinse liquid containing water with high surface tension is large, pattern collapse is likely to occur when the substrate is dried. By replacing the rinse solution with a first liquid that has a relatively high affinity for water, the amount of rinse solution remaining on the substrate immediately before drying can be reduced.

Additionally, the specific gravity of the second liquid is greater than that of the first liquid. Therefore, at the interface between the first liquid and the second liquid, the second liquid moves toward the upper surface of the substrate due to gravity, and the first liquid moves above the second liquid. That is, the second liquid enters between the first liquid and the substrate due to the difference in specific gravity. Additionally, since the surface tension of the second liquid is low and the specific gravity of the second liquid is high, the second liquid enters between the patterns, and the first liquid between the patterns is replaced by the second liquid. Since the second liquid with such a low surface tension enters between the patterns, when drying the substrate, even if the surface of the second liquid is formed between the patterns, the collapse of the pattern can be reduced.

The boiling point of the second liquid is above room temperature. Accordingly, when the second liquid is used in a room temperature environment, the second liquid does not need to be cooled in order to maintain the second liquid as a liquid. Additionally, the value obtained by subtracting room temperature from the boiling point of the second liquid is room temperature or lower. That is, the boiling point of the second liquid is a value within the range from room temperature to twice room temperature, and is relatively low compared to room temperature. If the boiling point of the second liquid is low, the speed at which the second liquid disappears from the substrate during drying of the substrate increases, so the time for which the collapse force that causes the pattern to collapse is applied to the pattern can be shortened. As a result, the collapse of the pattern can be reduced, and the quality of the substrate after drying can be improved.

The rinse liquid may be water such as pure water, or may be an aqueous solution containing water as a main component (for example, an aqueous solution with a volume percent concentration of water of 50 vol% or more).

In the above embodiment, at least one of the following features may be added to the above substrate processing method.

The rinse liquid supply process includes supplying the rinse liquid to the upper surface of the substrate while rotating the substrate at a rinse liquid supply speed, and the second substitution process includes a second replacement process that is smaller than the rinse liquid supply speed. and supplying the second liquid to the upper surface of the substrate while rotating the substrate at a displacement speed.

According to this method, the first liquid on the upper surface of the substrate is replaced with the second liquid while the substrate is rotated at low speed. When the supply of the second liquid is started, the upper surface of the substrate is composed of a substantially circular film of the second liquid (also referred to as the “second liquid film”) and a ring-shaped film of the first liquid surrounding the second liquid film (“the first liquid film”). It is covered with an amulet (also called an amulet). After that, the outer periphery of the second liquid film gradually widens toward the outer periphery of the upper surface of the substrate while remaining substantially circular. When the difference in properties between the first liquid and the second liquid is large, when the substrate is rotated at high speed, the outer periphery of the second liquid film does not expand while remaining substantially circular, and there is a risk that the first liquid may not be reliably replaced. By rotating the substrate at low speed, this phenomenon can be avoided.

The second replacement process replaces only a portion of the first liquid on the upper surface of the substrate with the second liquid, thereby forming a film of the second liquid and a film of the first liquid surrounding the film of the second liquid. , including a partial replacement process to maintain the state maintained on the upper surface of the substrate.

According to this method, only a portion of the first liquid on the upper surface of the substrate is replaced with the second liquid. As a result, the ring-shaped first liquid film remains at least on the outer periphery of the upper surface of the substrate, and the second liquid collects inside the first liquid film. Because the surface tension of the second liquid is low, if all the first liquid on the top surface of the substrate is replaced with the second liquid, a thin second liquid film is formed on the top surface of the substrate. Additionally, since the boiling point of the second liquid is low, if the supply of new second liquid is stopped, the second liquid on the substrate may evaporate immediately, and a portion of the upper surface of the substrate may be exposed from the second liquid film in a short period of time.

In contrast, since the surface tension of the first liquid is higher than the surface tension of the second liquid, the thickness of the first liquid film remaining on the outer periphery of the upper surface of the substrate is greater than the thickness of the second liquid film. The second liquid supplied to the upper surface of the substrate collects inside the ring-shaped first liquid film. Accordingly, a thick second liquid film is formed inside the first liquid film compared to the case where all the first liquid on the upper surface of the substrate is replaced with the second liquid. This can prevent a portion of the upper surface of the substrate from being exposed from the second liquid film in a short period of time.

The substrate processing method further includes a liquid discharge process of discharging the liquid film of the second liquid from the upper surface of the substrate before the drying process, wherein the liquid discharge process exposes only a portion of the upper surface of the substrate. A hole forming step of forming a hole in the liquid film of the second liquid, and a hole expansion step of expanding an outer edge of the exposed hole to the outer periphery of the upper surface of the substrate.

According to this method, while the second liquid film is held on the upper surface of the substrate, an exposed hole that exposes only a portion of the upper surface of the substrate is formed in the second liquid film. After that, the outer edge of the exposed hole is expanded to the outer periphery of the upper surface of the substrate. As a result, droplets of a size visible to the naked eye disappear from the upper surface of the substrate, and the entire upper surface of the substrate is exposed. In short, the second liquid film is discharged from the upper surface of the substrate while controlling the shape of the second liquid film. Therefore, compared to the case where the second liquid film is discharged in a disorderly manner, the quality of the substrate after drying can be stabilized.

The rinse liquid supply process includes supplying the rinse liquid to the upper surface of the substrate while rotating the substrate at a rinse liquid supply speed, and the hole expansion process includes a liquid discharge speed smaller than the rinse liquid supply speed. and a process of expanding the outer edge of the exposed hole to the outer periphery of the upper surface of the substrate while rotating the substrate.

According to this method, while rotating the substrate at low speed, the inner diameter and outer diameter of the ring-shaped second liquid film in which the exposed hole is formed and the inner diameter of the ring-shaped first liquid film surrounding the second liquid film are increased. When the difference in the properties of the first liquid and the second liquid is large, when the substrate is rotated at high speed, the outer circumference of the second liquid film remains almost circular and does not spread to the outer circumference of the upper surface of the substrate, and the first liquid spreads to the outer periphery of the upper surface of the substrate. There is a risk that it will remain in By rotating the substrate at low speed, this phenomenon can be avoided.

The hole expansion process includes a process of expanding the outer edge of the exposed hole to the outer periphery of the upper surface of the substrate while rotating the substrate at a rotation speed exceeding 0 and being 50 rpm or less.

According to this method, while rotating the substrate at a rotation speed exceeding 0 and not exceeding 50 rpm, the inner diameter and outer diameter of the ring-shaped second liquid film in which the exposed hole is formed, and the inner diameter of the ring-shaped first liquid film surrounding the second liquid film are increased. I order it. Because the centrifugal force applied to the second liquid is small, the inner and outer peripheries of the second liquid film slowly expand. As a result, the outer circumference of the second liquid film can be expanded to the outer circumference of the upper surface of the substrate while remaining substantially circular, and the amount of the first liquid remaining in the outer peripheral portion of the upper surface of the substrate can be reduced to zero or near zero.

The hole forming process includes a heating fluid supply process of discharging a heating fluid higher than the room temperature toward only a portion of the lower surface of the substrate.

According to this method, a heating fluid higher than room temperature is discharged toward only a portion of the lower surface of the substrate. After the heating fluid collides with the lower surface of the substrate, it spreads along the lower surface of the substrate. The substrate is heated by a heating fluid. The second liquid is heated by the substrate. The amount of evaporation of the second liquid per unit time is greatest on the side opposite to the position where the heating fluid collides with the lower surface of the substrate. Therefore, it is possible to control the position where the exposed hole is formed.

The heating fluid may be a liquid or gas at a temperature higher than room temperature, or may be a mixed fluid containing a liquid and a gas at a temperature higher than room temperature. The temperature of the heating fluid may be higher than the boiling point of the second liquid. When the temperature of the heating fluid is higher than the boiling point of the second liquid, the second liquid is vaporized on the side opposite to the position where the heating fluid collided with the lower surface of the substrate, and a large number of small bubbles are interposed between the second liquid and the upper surface of the substrate. . As a result, the second liquid falls from the upper surface of the substrate. In this case, if the thickness of the vapor layer containing the vapor of the second liquid is greater than the height of the pattern, all of the second liquid disappears between the patterns. Therefore, the second liquid film can be discharged from the substrate while preventing collapse of the pattern.

The hole forming process includes a uniform heating process of generating heat in a heater disposed below the substrate so as to overlap the substrate when viewed in plan.

According to this method, heat is generated by a heater disposed below the substrate so as to overlap the substrate when viewed from the top. The substrate is heated by a heater. The second liquid is heated by the substrate. Thereby, an exposed hole penetrating the second liquid film can be formed. Additionally, the heater can directly heat a wider area compared to the case where the heating fluid at a temperature higher than room temperature is discharged toward only a portion of the lower surface of the substrate. Thereby, the substrate and the second liquid film can be heated uniformly.

The temperature of the heater may be higher than the boiling point of the second liquid. If the temperature of the upper surface of the substrate (including the surface of the pattern when a pattern is formed) is higher than the boiling point of the second liquid, the second liquid is vaporized at the interface between the second liquid film and the substrate, forming a large number of small bubbles. is interposed between the second liquid and the upper surface of the substrate. When the second liquid is vaporized at all locations of the interface between the second liquid film and the substrate, a vapor layer containing vapor of the second liquid is formed between the second liquid film and the substrate. As a result, the second liquid falls from the upper surface of the substrate, and the second liquid film rises from the upper surface of the substrate. At this time, the frictional resistance acting on the second liquid film on the substrate is small enough to be considered zero. Therefore, the second liquid film can be discharged from the upper surface of the substrate with a small force.

The hole forming process rotates the substrate around a vertical rotation axis passing through the center of the upper surface of the substrate, and discharges the second liquid toward the upper surface of the substrate, so that the second liquid is A scanning process is included to move the position of impact on the upper surface from the central portion of the upper surface of the substrate to the outer peripheral side of the upper surface of the substrate.

According to this method, the second liquid is discharged through the second liquid nozzle while rotating the substrate. Additionally, the position at which the second liquid discharged from the second liquid nozzle collides with the upper surface of the substrate is moved from the central portion of the upper surface of the substrate to the outer peripheral side of the upper surface of the substrate. After moving the second liquid nozzle, the supply of new second liquid to the central portion of the upper surface of the substrate is stopped. Additionally, the second liquid evaporates on the central portion of the upper surface of the substrate and moves outward from the central portion of the upper surface of the substrate due to centrifugal force. Therefore, an exposed hole can be formed in the central portion of the upper surface of the substrate simply by moving the second liquid nozzle outward.

The hole forming step may include a gas supply step of discharging gas toward the liquid film of the second liquid on the upper surface of the substrate. The temperature of the gas may be room temperature or may be higher than room temperature. The hole forming step may include a heat generation step in which heat is generated in a heater disposed above the substrate. The gas supply process may be performed in parallel with the heating fluid supply process, uniform heating process, or scan process. The heat generation process may be performed in parallel with the heating fluid supply process, uniform heating process, scan process, or gas supply process. The heater may be a hot plate or a lamp, or may be other than these. The lamp may be an infrared lamp that emits infrared rays (for example, near infrared rays), an LED lamp containing a light-emitting diode, or may be other than these.

When gas is injected into the second liquid film, the second liquid contained in the second liquid film is pushed outward by the pressure of the gas. Additionally, evaporation of the second liquid is promoted by the supply of gas. In particular, when the temperature of the gas is higher than room temperature, the amount of evaporation of the second liquid per unit time increases. As a result, the thickness of the second liquid film is reduced, and exposed holes are formed in the second liquid film. Additionally, a force for moving the second liquid outward is applied to the second liquid on the substrate from the gas flowing outward along the surface of the second liquid film, so that the second liquid flows outward along the upper surface of the substrate. As a result, the outer edge of the exposed hole can be expanded toward the outer periphery of the upper surface of the substrate.

When the drying process is a process of removing the second liquid on the upper surface of the substrate by rotating the substrate at a high rotation speed greater than the rinse liquid supply speed, the hole forming process is a process of removing the second liquid on the upper surface of the substrate. It may include a rotary hole forming process of rotating the substrate at a liquid discharge speed less than the high rotation speed around a vertical rotation axis passing through the center of the upper surface of the substrate while stopping the supply of the second liquid. The rotary hole forming process may be performed in parallel with the heating fluid supply process, uniform heating process, scanning process, gas supply process, or heat generation process, or may be performed independently.

Because the boiling point of the second liquid is low, when the supply of new second liquid to the upper surface of the substrate is stopped, the second liquid evaporates, and the thickness of the second liquid film gradually decreases. Additionally, when the substrate is rotated, centrifugal force is applied to the second liquid, and the second liquid flows outward along the upper surface of the substrate. The second liquid flows from the inside to positions other than the central portion of the upper surface of the substrate, but the second liquid does not flow to the central portion of the upper surface of the substrate. Accordingly, long after the supply of the second liquid is stopped, an exposed hole penetrating the second liquid film is formed. As a result, exposed holes can be formed simply by rotating the substrate.

The substrate processing method includes a condensation prevention process of maintaining the temperature of the upper surface of the substrate at a value higher than the dew point temperature of the second liquid, in parallel with the liquid discharge process.

According to this method, when forming an exposed hole in the second liquid film or expanding the outer edge of the exposed hole toward the outer circumference of the upper surface of the substrate, the temperature of the upper surface of the substrate is maintained at a value higher than the dew point temperature of the second liquid. After the exposed hole is formed, at least a portion of the upper surface of the substrate is exposed, and the vapor of the second liquid floats around the upper surface of the substrate. Therefore, by maintaining the temperature of the upper surface of the substrate at a value higher than the dew point temperature of the second liquid, droplets of the second liquid can be prevented from being generated in the exposed portion of the upper surface of the substrate exposed from the second liquid film. As a result, the collapse of the pattern or the generation of particles in the exposed portion can be reduced.

The condensation prevention process includes a fluid supply process of discharging a condensation prevention fluid higher than the dew point temperature toward at least one of the upper and lower surfaces of the substrate, and a heat generation process of generating heat in a heater disposed above or below the substrate. It may contain at least one. When the dew point temperature of the second liquid is lower than room temperature, the condensation prevention fluid may be a room temperature liquid or gas, or may be a room temperature mixed fluid containing a liquid and a gas. The condensation prevention fluid may be the heating fluid or the gas discharged toward the second liquid film on the upper surface of the substrate in the gas supply process. The heater may be a hot plate or a lamp, or may be other than these. The lamp may be an infrared lamp that emits infrared rays (for example, near infrared rays), an LED lamp containing a light-emitting diode, or may be other than these.

Another embodiment of the present invention includes a substrate holding unit that holds a substrate horizontally, a rinse liquid supply unit that supplies a rinse liquid containing water to an upper surface of the substrate held in the substrate holding unit, and the substrate. a first replacement unit that replaces the rinse liquid on the upper surface of the substrate with the first liquid by supplying the first liquid to the upper surface of the substrate held in the holding unit; a second replacement unit for replacing the first liquid on the upper surface of the substrate with the second liquid by supplying a second liquid to the upper surface of the substrate; and a second replacement unit on the upper surface of the substrate held in the substrate holding unit. a drying unit that dries the substrate by removing two liquids, wherein the solubility of the second liquid in water is less than the solubility of the first liquid in water, and the surface tension of the second liquid is: The surface tension of the first liquid is lower, the specific gravity of the second liquid is greater than the specific gravity of the first liquid, the boiling point of the second liquid is above room temperature, and the room temperature is subtracted from the boiling point of the second liquid. Provides a substrate processing apparatus below the room temperature. According to this configuration, the same effects as those described above can be achieved.

The rinse liquid supply unit may include a rinse liquid nozzle that discharges the rinse liquid. The first replacement unit may include a first liquid nozzle that discharges the first liquid. The second replacement unit may include a second liquid nozzle that discharges the second liquid. The first liquid nozzle may be the rinse liquid nozzle, or may be a nozzle different from the rinse liquid nozzle. The second liquid nozzle may be the rinse liquid nozzle or the first liquid nozzle, or may be a nozzle different from the rinse liquid nozzle and the first liquid nozzle. The drying unit may include a spin motor that rotates the substrate around a vertical rotation axis passing through the central portion of the upper surface of the substrate.

The above-described or further objects, features and effects in the present invention will become clear from the description of the embodiments described below with reference to the attached drawings.

1A is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention as seen from above.
FIG. 1B is a schematic diagram of the substrate processing apparatus viewed from the side.
FIG. 2 is a schematic diagram of the interior of a processing unit provided in a substrate processing apparatus viewed horizontally.
Fig. 3 is a block diagram showing the hardware of the control device.
FIG. 4 is a process diagram for explaining an example (first embodiment) of substrate processing performed by a substrate processing apparatus.
Fig. 5A is a schematic diagram showing the state of the substrate when the first embodiment is being implemented.
Fig. 5B is a schematic diagram showing the state of the substrate when the first embodiment is being implemented.
Fig. 5C is a schematic diagram showing the state of the substrate when the first embodiment is being implemented.
FIG. 6 is a process diagram for explaining another example (second embodiment) of substrate processing performed by the substrate processing apparatus.
Fig. 7A is a schematic diagram showing the state of the substrate when the second embodiment is being implemented.
Fig. 7B is a schematic diagram showing the state of the substrate when the second embodiment is being implemented.
Fig. 7C is a schematic diagram showing the state of the substrate when the second embodiment is being implemented.
Fig. 7D is a schematic diagram showing the state of the substrate when the second embodiment is being implemented.
Fig. 7E is a schematic diagram showing the state of the substrate when the second embodiment is being implemented.
Fig. 7F is a schematic diagram showing the state of the substrate when the second embodiment is being implemented.
FIG. 8 is a process diagram for explaining another example (third embodiment) of substrate processing performed by the substrate processing apparatus.
Fig. 9A is a schematic diagram showing the state of the substrate when the third embodiment is being implemented.
Fig. 9B is a schematic diagram showing the state of the substrate when the third embodiment is being implemented.
Fig. 9C is a schematic diagram showing the state of the substrate when the third embodiment is being implemented.
Fig. 10 is a process diagram for explaining another example (fourth embodiment) of substrate processing performed by the substrate processing apparatus.
Fig. 11A is a schematic diagram showing the state of the substrate when the fourth embodiment is being implemented.
Fig. 11B is a schematic diagram showing the state of the substrate when the fourth embodiment is being implemented.
Fig. 11C is a schematic diagram showing the state of the substrate when the fourth embodiment is being implemented.
Fig. 12A is a schematic diagram of a spin chuck, a blocking member, and a hot plate viewed horizontally according to the second embodiment of the present invention.
Fig. 12B is a schematic diagram of the spin chuck and hot plate according to the second embodiment of the present invention as seen from above.
FIG. 13 is a process diagram for explaining another example (fifth embodiment) of substrate processing performed by the substrate processing apparatus.
Fig. 14A is a schematic diagram showing the state of the substrate when the fifth embodiment is being implemented.
Fig. 14B is a schematic diagram showing the state of the substrate when the fifth embodiment is being implemented.
Fig. 14C is a schematic diagram showing the state of the substrate when the fifth embodiment is being implemented.

FIG. 1A is a schematic diagram of the substrate processing apparatus 1 according to the first embodiment of the present invention as seen from above. FIG. 1B is a schematic diagram of the substrate processing apparatus 1 viewed from the side.

As shown in FIG. 1A , the substrate processing apparatus 1 is a single wafer type apparatus that processes disc-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 includes a load port LP holding a carrier CA accommodating a substrate W, and a processing liquid or a substrate W transferred from the carrier CA on the load port LP. A plurality of processing units (2) that process with a processing fluid such as a processing gas, a transfer robot that transfers a substrate (W) between the processing unit (2) and a carrier (CA) on a load port (LP), and a substrate processing device. It is provided with a control device (3) that controls (1).

The transfer robot includes an indexer robot (IR) that loads and unloads the substrate W into and out of the carrier CA on the load port LP, and an indexer robot (IR) that carries out the loading and unloading of the substrate W into and out of the plurality of processing units 2. Includes a center robot (CR) that performs unloading. The indexer robot (IR) transports the substrate (W) between the load port (LP) and the center robot (CR), and the center robot (CR) transports the substrate (W) between the indexer robot (IR) and the processing unit 2. W) is returned. The center robot CR includes a hand H1 supporting the substrate W, and the indexer robot IR includes a hand H2 supporting the substrate W.

The plurality of processing units 2 form a plurality of towers TW arranged around the center robot CR when viewed from the top. FIG. 1A shows an example in which four towers TW are formed. The center robot (CR) can access any tower (TW). As shown in FIG. 1B, each tower TW includes a plurality (for example, three) of processing units 2 stacked vertically.

FIG. 2 is a schematic diagram of the inside of the processing unit 2 provided in the substrate processing apparatus 1 viewed horizontally.

The processing unit 2 is a wet processing unit that supplies a processing liquid to the substrate W. The processing unit 2 includes a box-shaped chamber 4 having an internal space, a vertical rotation axis A1 passing through the center of the substrate W while holding one substrate W horizontally within the chamber 4. ) and a spin chuck 10 that rotates around the spin chuck 10, and a conventional processing cup 21 surrounding the spin chuck 10 around the rotation axis A1.

The chamber 4 includes a box-shaped partition 5 formed with a loading/unloading port 5b through which the substrate W passes, and a shutter 7 that opens and closes the loading/unloading port 5b. The FFU 6 (fan filter unit) is arranged on the air outlet 5a formed in the upper part of the partition wall 5. The FFU 6 always supplies clean air (air filtered by a filter) into the chamber 4 from the outlet 5a. The gas in the chamber 4 is discharged from the chamber 4 through the exhaust duct 8 connected to the bottom of the processing cup 21. Thereby, a downflow of clean air is always formed in the chamber 4. The flow rate of exhaust discharged into the exhaust duct (8) changes depending on the opening degree of the exhaust valve (9) disposed within the exhaust duct (8).

The spin chuck 10 includes a disc-shaped spin base 12 held in a horizontal position, a plurality of chuck pins 11 above the spin base 12 to maintain the substrate W in a horizontal position, and It includes a spin shaft 13 extending downward from the center of the spin base 12, and a spin motor 14 that rotates the spin base 12 and a plurality of chuck pins 11 by rotating the spin shaft 13. do. The spin chuck 10 is not limited to a clamp-type chuck in which a plurality of chuck pins 11 are brought into contact with the outer peripheral surface of the substrate W, and the back surface (lower surface) of the substrate W, which is the non-device formation surface, is used as the spin base. It may be a vacuum-type chuck that holds the substrate W horizontally by adsorbing it to the upper surface 12u of (12).

The processing cup 21 includes a plurality of guards 24 that receive the processing liquid discharged outward from the substrate W, and a plurality of cups that receive the processing liquid guided downward by the plurality of guards 24 ( 23) and a cylindrical outer wall member 22 surrounding the plurality of guards 24 and the plurality of cups 23. FIG. 2 shows an example in which four guards 24 and three cups 23 are formed, and the outermost cup 23 is integrated with the third guard 24 from the top.

The guard 24 includes a cylindrical portion 25 surrounding the spin chuck 10, and an annular ceiling portion 26 extending diagonally upward from the upper end of the cylindrical portion 25 toward the rotation axis A1. do. The plurality of ceiling parts 26 are overlapped up and down, and the plurality of cylindrical parts 25 are arranged concentrically. The annular top of the ceiling 26 corresponds to the top 24u of the guard 24 surrounding the substrate W and the spin base 12 when viewed from the top. The plurality of cups 23 are respectively arranged below the plurality of cylindrical portions 25. The cup 23 forms an annular sap groove that receives the treatment liquid guided downward by the guard 24.

The processing unit 2 includes a guard lifting unit 27 that individually raises and lowers the plurality of guards 24 . The guard lifting unit 27 positions the guard 24 at an arbitrary position from the upper value to the lower value. FIG. 2 shows a state in which two guards 24 are arranged at the upper position and the remaining two guards 24 are arranged at the lower position. The upper value is a position where the upper end 24u of the guard 24 is placed above the holding position where the substrate W held by the spin chuck 10 is placed. The lower value is a position where the upper end 24u of the guard 24 is placed below the holding position.

When supplying the processing liquid to the rotating substrate W, at least one guard 24 is disposed at an upper position. In this state, when the processing liquid is supplied to the substrate W, the processing liquid is thrown outward from the substrate W. The dropped processing liquid collides with the inner surface of the guard 24 horizontally facing the substrate W, and is guided to the cup 23 corresponding to the guard 24. As a result, the processing liquid discharged from the substrate W is collected in the cup 23.

The processing unit 2 includes a plurality of nozzles that discharge processing liquid toward the substrate W held on the spin chuck 10 . The plurality of nozzles includes a chemical liquid nozzle 31 which discharges a chemical liquid towards the upper surface of the substrate W, a rinse liquid nozzle 35 which discharges a rinse liquid towards the upper surface of the substrate W, and a chemical liquid nozzle 31 which discharges a chemical liquid towards the upper surface of the substrate W It includes a first liquid nozzle 39 that discharges the first liquid toward the upper surface, and a second liquid nozzle 43 that discharges the second liquid toward the upper surface of the substrate W.

The chemical liquid nozzle 31 may be a scan nozzle that can move horizontally within the chamber 4, or may be a fixed nozzle fixed to the partition wall 5 of the chamber 4. The same applies to the rinse liquid nozzle 35, the first liquid nozzle 39, and the second liquid nozzle 43. 2 shows that the chemical liquid nozzle 31, the rinse liquid nozzle 35, the first liquid nozzle 39, and the second liquid nozzle 43 are scan nozzles, and four nozzles corresponding to these four nozzles are moved. An example of a unit being formed is shown.

The chemical liquid nozzle 31 is connected to a chemical liquid pipe 32 that guides the chemical liquid to the chemical liquid nozzle 31 . When the chemical valve 33 installed interposed in the chemical liquid pipe 32 is opened, the chemical liquid is continuously discharged downward from the discharge port of the chemical liquid nozzle 31. The chemical liquid discharged from the chemical liquid nozzle 31 is sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, hydrogen peroxide water, organic acid (e.g. citric acid, oxalic acid, etc.), organic alkali (e.g. TMAH: tetramethyl It may be a liquid containing at least one of ammonium hydroxide, etc.), a surfactant, and a corrosion inhibitor, or it may be a liquid other than these.

Although not shown, the chemical liquid valve 33 includes a valve body formed with an annular valve seat through which the chemical liquid passes, a valve body movable with respect to the valve seat, a closed position where the valve body contacts the valve seat, and a valve body from the valve seat. It includes an actuator that moves the valve body between separately open positions. The same goes for other valves. The actuator may be a pneumatic actuator or an electric actuator, or may be an actuator other than these. The control device 3 opens and closes the chemical liquid valve 33 by controlling the actuator.

The chemical liquid nozzle 31 is connected to a nozzle moving unit 34 that moves the chemical liquid nozzle 31 in at least one of the vertical and horizontal directions. The nozzle moving unit 34 is located at a processing position where the chemical liquid discharged from the chemical liquid nozzle 31 is supplied to the upper surface of the substrate W, and where the chemical liquid nozzle 31 is located around the processing cup 21 when viewed from the top. The chemical liquid nozzle 31 is moved horizontally between the standby positions.

The rinse liquid nozzle (35) is connected to a rinse liquid pipe (36) that guides the rinse liquid to the rinse liquid nozzle (35). When the rinse liquid valve 37 mounted between the rinse liquid pipes 36 is opened, the rinse liquid is continuously discharged downward from the discharge port of the rinse liquid nozzle 35. The rinse liquid discharged from the rinse liquid nozzle 35 is, for example, pure water (deionized water (DIW)). The rinse solution may be carbonated water, electrolyzed ion water, hydrogen water, ozone water, hydrochloric acid water at a diluted concentration (for example, about 10 to 100 ppm), or ammonia water at a diluted concentration (for example, about 10 to 100 ppm). It's okay.

The rinse liquid nozzle 35 is connected to a nozzle moving unit 38 that moves the rinse liquid nozzle 35 in at least one of the vertical and horizontal directions. The nozzle moving unit 38 is located at a processing position where the rinse liquid discharged from the rinse liquid nozzle 35 is supplied to the upper surface of the substrate W, and around the processing cup 21 when the rinse liquid nozzle 35 is viewed from the top. Move the rinse liquid nozzle (35) horizontally between the standby positions located at.

The first liquid nozzle 39 is connected to a first liquid pipe 40 that guides the first liquid to the first liquid nozzle 39. When the first liquid valve 41 mounted on the first liquid pipe 40 is opened, the first liquid is continuously discharged downward from the discharge port of the first liquid nozzle 39. The first liquid nozzle 39 is connected to a nozzle moving unit 42 that moves the first liquid nozzle 39 in at least one of the vertical and horizontal directions. The nozzle moving unit 42 has a processing position where the first liquid discharged from the first liquid nozzle 39 is supplied to the upper surface of the substrate W, and a processing cup (when the first liquid nozzle 39 is viewed from the top) 21) Move the first liquid nozzle 39 horizontally between ambient standby positions.

The second liquid nozzle 43 is connected to a second liquid pipe 44 that guides the second liquid to the second liquid nozzle 43. When the second liquid valve 45 installed interposed in the second liquid pipe 44 is opened, the second liquid is continuously discharged downward from the discharge port of the second liquid nozzle 43. The second liquid nozzle 43 is connected to a nozzle moving unit 46 that moves the second liquid nozzle 43 in at least one of the vertical and horizontal directions. The nozzle moving unit 46 has a processing position where the second liquid discharged from the second liquid nozzle 43 is supplied to the upper surface of the substrate W, and a processing cup (when the second liquid nozzle 43 is viewed from the top) 21) Move the second liquid nozzle 43 horizontally between ambient standby positions.

The solubility of the second liquid in water is less than the solubility of the first liquid in water. The surface tension of the second liquid is lower than the surface tension of the first liquid. The specific gravity of the second liquid is greater than that of the first liquid. The boiling point of the second liquid is room temperature (for example, 20 to 25°C) or higher. The value obtained by subtracting room temperature from the boiling point of the second liquid is room temperature or lower. The value obtained by subtracting room temperature from the boiling point of the second liquid may exceed room temperature. The boiling point of the second liquid may be lower than the boiling point of water. Likewise, the boiling point of the first liquid may be lower than the boiling point of water. The boiling point of the second liquid may be above room temperature, below 50°C, or above 50°C. The vapor pressure of the second liquid may be higher than the vapor pressure of the first liquid. The surface tension of the first liquid may be lower than the surface tension of water.

Below, an example will be described where the first liquid is an IPA liquid (also simply referred to as IPA), and the second liquid is a Novec (registered trademark) 7000 liquid (also simply referred to as Novec7000). Novec7000 is a type of HFE. The second liquid may be a HFE liquid other than Novec7000, a fluorine-based solvent liquid other than HFE, or a liquid other than a fluorine-based solvent. The first liquid may be an alcohol liquid other than IPA, such as propanol or methanol.

The solubility of Novec7000 in water is less than that of IPA in water. The surface tension of Novec7000 is lower than that of IPA. The proportion of Novec7000 is larger than that of IPA. The boiling point of Novec7000 is 34°C. The boiling point of Novec7000 is above room temperature. When the room temperature is 23℃, the boiling point of Novec7000 minus the room temperature is 11, which is below room temperature. The boiling point of Novec7000 is lower than that of IPA. The vapor pressure of Novec7000 is higher than that of IPA.

The processing unit 2 includes a blocking member 51 disposed above the spin chuck 10. Fig. 2 shows an example where the blocking member 51 is a disc-shaped blocking plate. The blocking member 51 includes a disk portion 52 disposed horizontally above the spin chuck 10. The blocking member 51 is supported horizontally by a normal support shaft 53 extending upward from the center of the disk portion 52. The center line of the disk portion 52 is disposed on the rotation axis A1 of the substrate W. The lower surface of the disc portion 52 corresponds to the lower surface 51L of the blocking member 51. The lower surface 51L of the blocking member 51 is an opposing surface that faces the upper surface of the substrate W. The lower surface 51L of the blocking member 51 is parallel to the upper surface of the substrate W and has an outer diameter equal to or larger than the diameter of the substrate W.

The blocking member 51 is connected to a blocking member lifting unit 54 that vertically raises and lowers the blocking member 51. The blocking member lifting unit 54 positions the blocking member 51 at an arbitrary position from the upper position (position shown in FIG. 2) to the lower position. The lower value is such that the lower surface 51L of the blocking member 51 approaches the upper surface of the substrate W to a height at which a scan nozzle such as the chemical liquid nozzle 31 cannot enter between the substrate W and the blocking member 51. It is a close location. The upper value is the separation position where the blocking member 51 retreats to a height at which the scan nozzle can enter between the blocking member 51 and the substrate W.

The plurality of nozzles include a central nozzle 55 that discharges a processing fluid such as a processing liquid or processing gas downward through an upper central opening 61 opened at the center of the lower surface 51L of the blocking member 51. . The center nozzle 55 extends vertically along the rotation axis A1. The center nozzle 55 is arranged in a through hole that penetrates the central part of the blocking member 51 vertically. The inner peripheral surface of the blocking member 51 surrounds the outer peripheral surface of the central nozzle 55 at intervals in the radial direction (direction perpendicular to the rotation axis A1). The center nozzle 55 moves up and down together with the blocking member 51. The discharge port of the central nozzle 55 that discharges the processing fluid is disposed above the upper central opening 61 of the blocking member 51.

The center nozzle 55 is connected to an upper gas pipe 56 that guides the inert gas to the center nozzle 55. The substrate processing apparatus 1 may be provided with a heater 59 that heats the inert gas discharged from the central nozzle 55. When the upper gas valve 57 mounted on the upper gas pipe 56 is opened, the inert gas flows into the center nozzle 55 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 58 that changes the flow rate of the inert gas. ) is continuously discharged downward from the discharge port. The inert gas discharged from the central nozzle 55 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas.

The inner peripheral surface of the blocking member 51 and the outer peripheral surface of the central nozzle 55 form a normal upper gas flow path 62 extending vertically. The upper gas passage 62 is connected to an upper gas pipe 63 that guides the inert gas to the upper central opening 61 of the blocking member 51. When the upper gas valve 64 mounted on the upper gas pipe 63 is opened, the inert gas flows into the blocking member 51 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 65 that changes the flow rate of the inert gas. ) is continuously discharged downward from the upper central opening 61. The inert gas discharged from the upper central opening 61 of the blocking member 51 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas.

The plurality of nozzles include a lower surface nozzle 71 that discharges the processing liquid toward the central portion of the lower surface of the substrate W. The lower surface nozzle 71 includes a nozzle disk portion disposed between the upper surface 12u of the spin base 12 and the lower surface of the substrate W, and a nozzle cylindrical portion extending downward from the nozzle disk portion. The discharge port of the lower nozzle 71 is opened in the central portion of the upper surface of the nozzle disk portion. When the substrate W is held in the spin chuck 10, the discharge port of the lower surface nozzle 71 faces the central portion of the lower surface of the substrate W upward and downward.

The lower surface nozzle 71 is connected to a heating fluid pipe 72 that guides hot water (pure water higher than room temperature), which is an example of the heating fluid, to the lower surface nozzle 71. The pure water supplied to the lower nozzle 71 is heated by a heater 75 installed through the heating fluid pipe 72. When the heating fluid valve 73 mounted on the heating fluid pipe 72 is opened, hot water flows into the lower nozzle 71 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 74 that changes the flow rate of hot water. It is continuously discharged upward from the discharge port. Thereby, hot water is supplied to the lower surface of the substrate W.

The outer peripheral surface of the lower surface nozzle 71 and the inner peripheral surface of the spin base 12 form a normal lower gas flow path 82 extending upward and downward. The lower gas passage 82 includes a lower central opening 81 that opens in the central portion of the upper surface 12u of the spin base 12. The lower gas flow path 82 is connected to a lower gas pipe 83 that guides the inert gas to the lower central opening 81 of the spin base 12. When the lower gas valve 84 mounted on the lower gas pipe 83 is opened, the inert gas flows to the spin base 12 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 85 that changes the flow rate of the inert gas. ) is continuously discharged upward from the lower central opening 81.

The inert gas discharged from the lower central opening 81 of the spin base 12 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas. When the substrate W is held in the spin chuck 10, when the lower central opening 81 of the spin base 12 discharges nitrogen gas, the nitrogen gas is connected to the lower surface of the substrate W and the spin base 12. ) flows radially between the upper surfaces (12u) of Thereby, the space between the substrate W and the spin base 12 is filled with nitrogen gas.

Fig. 3 is a block diagram showing the hardware of the control device 3.

The control device 3 is a computer including a computer main body 3a and a peripheral device 3d connected to the computer main body 3a. The computer main body 3a includes a CPU 3b (central processing unit) that executes various instructions and a main memory 3c that stores information. The peripheral device 3d includes an auxiliary storage device 3e that stores information such as a program (P), a reading device 3f that reads information from a removable medium (RM), a host computer (HC), etc. Includes a communication device (3g) that communicates with other devices.

The control device 3 is connected to an input device and a display device. The input device is operated when an operator, such as a user or a maintenance person, inputs information into the substrate processing apparatus 1. Information is displayed on the screen of the display device. The input device may be any of a keyboard, pointing device, and touch panel, or may be a device other than these. A touch panel display that also serves as an input device and a display device may be formed in the substrate processing apparatus 1.

CPU 3b executes program P stored in auxiliary memory 3e. The program P in the auxiliary storage device 3e may be pre-installed in the control device 3 or may be sent to the auxiliary storage device 3e from the removable media (RM) through the reading device 3f. Alternatively, it may be sent to the auxiliary memory device 3e from an external device such as a host computer (HC) through the communication device 3g.

The auxiliary memory device 3e and removable media (RM) are non-volatile memories that retain memory even when power is not supplied. The auxiliary storage device 3e is a magnetic storage device such as a hard disk drive, for example. Removable media (RM) is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. Removable media (RM) is an example of a computer-readable recording medium on which a program (P) is recorded. Removable media (RM) is a non-transitory type of recording medium.

The auxiliary memory device 3e stores a plurality of recipes. The recipe is information that specifies the processing content, processing conditions, and processing sequence of the substrate W. The plurality of recipes differ from each other in at least one of the processing content of the substrate W, processing conditions, and processing sequence. The control device 3 controls the substrate processing device 1 so that the substrate W is processed according to a recipe specified by the host computer HC. The control device 3 is programmed to execute each of the following processes.

Next, the first embodiment will be described.

FIG. 4 is a process diagram for explaining an example (first embodiment) of processing of the substrate W performed by the substrate processing apparatus 1. 5A to 5C are schematic diagrams showing the state of the substrate W when the first embodiment is being implemented. In the following, reference is made to FIGS. 2 and 4. Reference is made to FIGS. 5A to 5C as appropriate.

The substrate W to be processed is, for example, a semiconductor wafer such as a silicon wafer. The surface of the substrate W corresponds to a device formation surface on which devices such as transistors and capacitors are formed. The substrate W may be a substrate W on which a pattern P1 (see FIG. 14A) is formed on the surface of the substrate W, which is the pattern formation surface, but the pattern P1 is not formed on the surface of the substrate W. An unused substrate (W) may also be used. In the latter case, the pattern (P1) may be formed in the chemical solution supply process described later.

When the substrate W is processed by the substrate processing apparatus 1, a loading process (step S1 in FIG. 4) of loading the substrate W into the chamber 4 is performed.

Specifically, with the blocking member 51 positioned at the upper position, all guards 24 positioned at the lower position, and all scan nozzles positioned at the standby position, the center robot CR (see Fig. 1a) While supporting the substrate W with the hand H1, the hand H1 is allowed to enter the chamber 4. Then, the center robot CR places the substrate W on the hand H1 on the plurality of chuck pins 11 with the surface of the substrate W facing upward. After that, the plurality of chuck pins 11 are pressed against the outer peripheral surface of the substrate W, and the substrate W is gripped. After placing the substrate W on the spin chuck 10, the center robot CR retracts the hand H1 from the inside of the chamber 4.

Next, the upper gas valve 64 and the lower gas valve 84 are opened, and the upper central opening 61 of the blocking member 51 and the lower central opening 81 of the spin base 12 allow nitrogen gas to be discharged. commences. Thereby, the space between the substrate W and the blocking member 51 is filled with nitrogen gas. Likewise, the space between the substrate W and the spin base 12 is filled with nitrogen gas. Meanwhile, the guard raising/lowering unit 27 raises at least one guard 24 from the lower level to the upper level. After that, the spin motor 14 is driven, and rotation of the substrate W begins (step S2 in FIG. 4). Thereby, the substrate W rotates at the chemical liquid supply speed (100 rpm or more, less than 1000 rpm).

Next, a chemical liquid supply process (step S3 in FIG. 4 ) is performed in which a chemical liquid is supplied to the upper surface of the substrate W to form a chemical liquid film that covers the entire upper surface of the substrate W.

Specifically, with the blocking member 51 positioned at the upper position and at least one guard 24 positioned at the upper position, the nozzle moving unit 34 moves the chemical liquid nozzle 31 from the standby position to the processing position. Move to . After that, the chemical liquid valve 33 opens, and the chemical liquid nozzle 31 starts discharging the chemical liquid. When a predetermined time elapses after the chemical liquid valve 33 is opened, the chemical liquid valve 33 is closed and discharge of the chemical liquid is stopped. After that, the nozzle moving unit 34 moves the chemical liquid nozzle 31 to the standby position.

The chemical liquid discharged from the chemical liquid nozzle 31 collides with the upper surface of the substrate W rotating at the chemical liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. Therefore, the chemical liquid is supplied to the entire upper surface of the substrate W, and a chemical liquid film covering the entire upper surface of the substrate W is formed. When the chemical liquid nozzle 31 is discharging the chemical liquid, the nozzle moving unit 34 may move the liquid landing position so that the liquid landing position of the chemical liquid on the upper surface of the substrate W passes the central part and the outer peripheral part, and the liquid landing position may be moved so that the chemical liquid lands on the upper surface of the substrate W. You can stop the position.

Next, pure water, which is an example of a rinse liquid, is supplied to the upper surface of the substrate W, and a rinse liquid supply process (step S4 in FIG. 4) is performed to wash away the chemical liquid on the substrate W.

Specifically, with the blocking member 51 positioned at the upper position and at least one guard 24 positioned at the upper position, the nozzle moving unit 38 processes the rinse liquid nozzle 35 from the standby position. Move to location. After that, the rinse liquid valve 37 opens, and the rinse liquid nozzle 35 starts discharging the rinse liquid. Before the discharge of pure water starts, the guard lifting unit 27 may move at least one guard 24 vertically in order to switch the guard 24 that receives the liquid discharged from the substrate W. When a predetermined time elapses after the rinse liquid valve 37 is opened, the rinse liquid valve 37 is closed and discharge of the rinse liquid is stopped. After that, the nozzle moving unit 38 moves the rinse liquid nozzle 35 to the standby position.

The pure water discharged from the rinse liquid nozzle 35 collides with the upper surface of the substrate W rotating at the rinse liquid supply speed (100 rpm or more, less than 1000 rpm), and then crushes the upper surface of the substrate W by centrifugal force. It flows outwards. The chemical liquid on the substrate W is replaced with pure water discharged from the rinse liquid nozzle 35. As a result, a pure water liquid film is formed that covers the entire upper surface of the substrate W. When the rinse liquid nozzle 35 is discharging pure water, the nozzle moving unit 38 may move the liquid landing position of the pure water on the upper surface of the substrate W so that it passes through the central part and the outer peripheral part, and may move the liquid landing position of the pure water on the upper surface of the substrate W. The liquid extraction position may be stopped.

Next, a first replacement process (step S5 in FIG. 4 ) is performed in which the first liquid is supplied to the upper surface of the substrate W and the rinse liquid on the upper surface of the substrate W is replaced with the first liquid.

Specifically, with the blocking member 51 positioned at the upper position and at least one guard 24 positioned at the upper position, the nozzle moving unit 42 moves the first liquid nozzle 39 from the standby position. Move to processing location. Thereafter, the spin chuck 10 rotates the substrate W at a first displacement speed. The first substitution rate may be the same as or different from the rinse liquid supply rate. With the first liquid nozzle 39 positioned above the substrate W, the first liquid valve 41 opens, and the first liquid nozzle 39 starts discharging the first liquid. Before the discharge of the first liquid starts, the guard lifting unit 27 moves at least one guard 24 vertically to switch the guard 24 that receives the liquid discharged from the substrate W. do.

The first liquid discharged from the first liquid nozzle 39 collides with the upper surface of the substrate W rotating at the first displacement speed and then flows outward along the upper surface of the substrate W. The pure water on the substrate W is replaced by the first liquid discharged from the first liquid nozzle 39. As a result, the first liquid film F1 (liquid film of the first liquid. The same applies hereinafter) is formed, which covers the entire upper surface of the substrate W. When the first liquid nozzle 39 is discharging the first liquid, the nozzle moving unit 42 moves the liquid landing position of the first liquid on the upper surface of the substrate W so that it passes the central part and the outer peripheral part. You may do this, or you may stop the liquid extraction position at the center.

After the pure water liquid film is replaced with the first liquid film F1, the first paddle process (step in FIG. 4) holds the first liquid film F1 on the upper surface of the substrate W while stopping the discharge of the first liquid. S6) is implemented.

Specifically, when the first liquid nozzle 39 is stopped at the central processing position where the first liquid discharged from the first liquid nozzle 39 collides with the central portion of the upper surface of the substrate W, the spin chuck 10 ) The rotation speed of this substrate W is reduced from the first displacement speed to the first paddle speed. The first paddle speed is, for example, a speed greater than 0 and less than or equal to 50 rpm. After the rotational speed of the substrate W is lowered to the first paddle speed, the first liquid valve 41 is closed, and discharge of the first liquid is stopped. After that, the nozzle moving unit 42 moves the first liquid nozzle 39 from the central processing position to the standby position.

When the rotation speed of the substrate W is lowered to the first paddle speed, the centrifugal force applied to the first liquid on the substrate W becomes weaker. Therefore, the first liquid is not discharged from the upper surface of the substrate W, or only a trace amount is discharged. Accordingly, even after the discharge of the first liquid is stopped, the first liquid film F1 covering the entire upper surface of the substrate W is maintained on the substrate W. After replacing the pure water liquid film with the first liquid film F1, even if a trace amount of pure water remains between the patterns P1 (see FIG. 14A), this pure water dissolves in the first liquid and diffuses into the first liquid. do. As a result, the pure water remaining between the patterns (P1) can be reduced.

Next, a second replacement process (step S7-1 in FIG. 4) is performed in which the second liquid is supplied to the upper surface of the substrate W, and the first liquid on the upper surface of the substrate W is replaced with the second liquid. .

Specifically, with the blocking member 51 positioned at the upper position and at least one guard 24 positioned at the upper position, the nozzle moving unit 46 moves the second liquid nozzle 43 from the standby position. Move to processing location. Thereafter, the spin chuck 10 rotates the substrate W at a second displacement speed. The second replacement rate may be the same as or different from the rinse liquid supply rate. The second substitution rate may be the same as or different from the first substitution rate. With the second liquid nozzle 43 positioned above the substrate W, the second liquid valve 45 opens, and the second liquid nozzle 43 starts discharging the second liquid. Before the discharge of the second liquid starts, the guard lifting unit 27 moves at least one guard 24 vertically to switch the guard 24 that receives the liquid discharged from the substrate W. do.

The second liquid discharged from the second liquid nozzle 43 collides with the upper surface of the substrate W rotating at the second displacement speed and then flows outward along the upper surface of the substrate W. When the second liquid nozzle 43 is discharging the second liquid, the nozzle moving unit 46 moves the liquid landing position of the second liquid on the upper surface of the substrate W so that it passes the central part and the outer peripheral part. You may do this, or you may stop the liquid extraction position at the center. In this example, the nozzle moving unit 46 stops the second liquid nozzle 43 at the central processing position where the second liquid discharged from the second liquid nozzle 43 collides with the central portion of the upper surface of the substrate W. I order it.

When the second liquid nozzle 43 discharges the second liquid toward the central portion of the upper surface of the substrate W, the second liquid discharged from the second liquid nozzle 43 is discharged from the central portion of the upper surface of the substrate W. 1 Collision with the amulet (F1). The second liquid penetrates the first liquid film F1 and collides with the central portion of the upper surface of the substrate W. The first liquid in the central portion of the upper surface of the substrate W flows outward along the upper surface of the substrate W due to the supply of the second liquid. The second liquid that collides with the central portion of the upper surface of the substrate W flows outward in all directions from the central portion of the upper surface of the substrate W along the upper surface of the substrate W. As a result, as shown in FIG. 5A, a substantially circular second liquid film F2 (liquid film of the second liquid, hereinafter the same applies) covering the central portion of the upper surface of the substrate W, and a second liquid film F2 surrounding the second liquid film F2. A ring-shaped first liquid film F1 is formed on the upper surface of the substrate W.

The specific gravity of the second liquid is greater than that of the first liquid. Therefore, at the interface between the first liquid and the second liquid, the second liquid moves toward the upper surface side of the substrate W by gravity, and the first liquid moves onto the second liquid. In short, the second liquid enters between the first liquid and the substrate W due to the difference in specific gravity (see Figure 5a). As the discharge of the second liquid continues, this interface moves outward along the upper surface of the substrate W. Accordingly, the first liquid remaining between the second liquid and the substrate W can be reduced, and the first liquid can be reliably replaced with the second liquid. Accordingly, the first liquid remaining between the patterns P1 (see FIG. 14A) can be reduced.

As the discharge of the second liquid continues, the outer diameter of the second liquid film F2 gradually increases, and the width of the ring-shaped first liquid film F1 (from the inner circumference of the first liquid film F1 to the outer circumference of the substrate W) The length in the diametric direction) gradually decreases. When a predetermined time elapses after the discharge of the second liquid is started, the outer periphery of the second liquid film F2 spreads to the outer periphery of the upper surface of the substrate W, and all or almost all of the first liquid is replaced by the second liquid. As a result, as shown in FIG. 5B, the second liquid film F2 is formed to cover the entire upper surface of the substrate W. After that, the second liquid valve 45 is closed, and discharge of the second liquid is stopped.

The second liquid is supplied to the upper surface of the substrate W rotating at the second displacement speed. In this example, the second displacement speed is less than the rinse liquid supply speed and is equal to the first paddle speed (e.g., a speed greater than 0 and less than or equal to 50 rpm). In short, the second liquid is discharged toward the upper surface of the substrate W rotating at low speed. As described above, as the discharge of the second liquid continues, the outer diameter of the second liquid film F2 gradually increases. If the second liquid is continuously discharged toward the upper surface of the substrate W rotating at low speed, the outer circumference of the second liquid film F2 expands to the outer circumference of the upper surface of the substrate W while remaining substantially circular.

On the other hand, when the difference in properties between the first liquid and the second liquid is large, if the second liquid is continuously discharged toward the upper surface of the substrate W rotating at high speed, the first liquid will be on the upper surface of the substrate W. There is a risk that it will remain in the outsourcing department. For example, the outer periphery of the second liquid film F2 becomes jagged at the outer periphery of the upper surface of the substrate W when viewed from the top, and there is a risk that the first liquid will remain between the jagged outer periphery of the second liquid film F2. There is. In cases where such a concern exists, the second liquid may be continuously discharged toward the upper surface of the substrate W rotating at low speed as described above.

The spin chuck 10 rotates the substrate W holding the second liquid film F2 covering the entire upper surface of the substrate W at a second displacement speed while the discharge of the second liquid is stopped. As mentioned above, in this example, the second displacement speed is equal to the first paddle speed. When the second displacement speed is equal to the first paddle speed, the second liquid is not discharged from the upper surface of the substrate W, or only a trace amount is discharged. Accordingly, in a state where the discharge of the second liquid is stopped, the second liquid film F2 covering the entire upper surface of the substrate W is maintained on the upper surface of the substrate W (second paddle process (step S8 in FIG. 4 -One)).

Even if a trace amount of the first liquid remains between the second liquid film F2 and the substrate W after replacing the first liquid film F1 with the second liquid film F2, this first liquid is the second liquid. dissolves in and diffuses into the second liquid. As a result, the first liquid remaining between the second liquid film F2 and the substrate W can be reduced. Even after the discharge of the second liquid is stopped, if the second liquid film F2 is maintained on the upper surface of the substrate W, the time for dissolving the first liquid in the second liquid can be extended, allowing more of the first liquid to be absorbed. It can be dissolved in the second liquid.

Next, a drying process (step S11 in FIG. 4) of drying the substrate W by rotating the substrate W at high speed is performed.

Specifically, the blocking member lifting unit 54 lowers the blocking member 51 from the upper position to the lower position. In this state, the spin chuck 10 rotates the substrate W at a high rotation speed (for example, several thousand rpm) greater than the rinse liquid supply speed. The second liquid on the upper surface of the substrate W flows outward along the upper surface of the substrate W in a disorderly manner. Thereby, as shown in FIG. 5C, the second liquid is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W begins, the spin chuck 10 stops rotating. As a result, the rotation of the substrate W is stopped (step S12 in FIG. 4).

Next, a unloading process (step S13 in FIG. 4) is performed to unload the substrate W from the chamber 4.

Specifically, the blocking member lifting unit 54 raises the blocking member 51 to the upper level, and the guard lifting unit 27 lowers all the guards 24 to the lower level. In addition, the upper gas valve 64 and the lower gas valve 84 are closed, and the upper central opening 61 of the blocking member 51 and the lower central opening 81 of the spin base 12 prevent the discharge of nitrogen gas. Stop it. After that, the center robot CR causes the hand H1 to enter the chamber 4. The center robot CR supports the substrate W on the spin chuck 10 with the hand H1 after the plurality of chuck pins 11 release the grip of the substrate W. After that, the center robot CR supports the substrate W with the hand H1 and retracts the hand H1 from the inside of the chamber 4. As a result, the processed substrate W is taken out of the chamber 4.

Next, the second embodiment will be described.

Since the flow of the second embodiment from the loading process (step S1 in Fig. 6) to the first paddle process (step S6 in Fig. 6) is the same as the first embodiment, the flow after the second replacement process will be described below. do.

FIG. 6 is a process diagram for explaining another example (second embodiment) of processing of the substrate W performed by the substrate processing apparatus 1. 7A to 7F are schematic diagrams showing the state of the substrate W when the second embodiment is being implemented. In the following, reference is made to FIGS. 2 and 6. Reference is made to FIGS. 7A to 7F as appropriate.

After the first liquid film F1 is formed, the second liquid is supplied to the upper surface of the substrate W, and the first liquid on the upper surface of the substrate W is replaced with the second liquid in a second replacement process (in FIG. 6) Step S7-2) is carried out.

Specifically, with the blocking member 51 positioned at the upper position and at least one guard 24 positioned at the upper position, the nozzle moving unit 46 moves the second liquid nozzle 43 from the standby position. Move to processing location. Thereafter, the spin chuck 10 rotates the substrate W at a second displacement speed. The second replacement rate may be the same as or different from the rinse liquid supply rate. The second substitution rate may be the same as or different from the first substitution rate. With the second liquid nozzle 43 positioned above the substrate W, the second liquid valve 45 opens, and the second liquid nozzle 43 starts discharging the second liquid.

Before the discharge of the second liquid starts, the guard lifting unit 27 moves at least one guard 24 vertically to switch the guard 24 that receives the liquid discharged from the substrate W. do. When the second liquid nozzle 43 is discharging the second liquid, the nozzle moving unit 46 moves the liquid landing position of the second liquid on the upper surface of the substrate W so that it passes the central part and the outer peripheral part. You may do this, or you may stop the liquid extraction position at the center. In this example, the nozzle moving unit 46 stops the second liquid nozzle 43 at the central processing position where the second liquid discharged from the second liquid nozzle 43 collides with the central portion of the upper surface of the substrate W. I order it.

As shown in FIG. 7A, when the second liquid is discharged toward the central portion of the upper surface of the substrate W, a substantially circular second liquid film F2 covering the central portion of the upper surface of the substrate W, and a second liquid film F2 ) A ring-shaped first liquid film F1 surrounding the ) is formed on the upper surface of the substrate W. As the discharge of the second liquid continues, the outer diameter of the second liquid film F2 gradually increases and the width of the ring-shaped first liquid film F1 gradually decreases. The second liquid valve 45 is closed before the first liquid film F1 disappears from the upper surface of the substrate W. As shown in FIG. 7B , for example, the total amount of the second liquid discharged from the second liquid nozzle 43 is controlled so that the first liquid film F1 remains only on the outer peripheral portion of the upper surface of the substrate W. The width of the first liquid film (F1) is smaller than the radius of the second liquid film (F2).

The spin chuck 10 rotates the substrate W holding the substantially circular second liquid film F2 and the ring-shaped first liquid film F1 at a second displacement speed while the discharge of the second liquid is stopped. I order it. The second displacement speed may be the same as the first paddle speed (e.g., a speed greater than 0 and less than or equal to 50 rpm). When the second displacement speed is equal to the first paddle speed, the first liquid is not discharged from the upper surface of the substrate W, or only a trace amount is discharged. Therefore, as shown in FIG. 7B, in a state in which discharge of the second liquid is stopped, the substantially circular second liquid film F2 and the ring-shaped first liquid film F1 are maintained on the upper surface of the substrate W ( Second paddle process (step S8-2 in FIG. 6)).

If the outer periphery of the second liquid film F2 is expanded to the outer periphery of the upper surface of the substrate W without leaving a ring-shaped first liquid film F1 on the outer periphery of the upper surface of the substrate W, the thin second liquid film F2 is formed on the substrate W. It is formed on the upper surface of (W). This is because the surface tension of the second liquid is low. In addition, in addition to the thinness of the second liquid film F2, the volatility of the second liquid is high, so when the discharge of the second liquid is stopped, the second liquid on the substrate W evaporates immediately, and the upper surface of the substrate W A portion of may be exposed from the second liquid film (F2) in a short period of time.

In contrast, since the surface tension of the first liquid is higher than the surface tension of the second liquid, the thickness of the first liquid film F1 remaining on the outer peripheral portion of the upper surface of the substrate W is greater than the thickness of the second liquid film F2. . The second liquid supplied to the upper surface of the substrate W collects inside the ring-shaped first liquid film F1. Accordingly, a thicker second liquid film F2 is formed inside the first liquid film F1 than in the case where the outer circumference of the second liquid film F2 is expanded to the outer circumference of the upper surface of the substrate W. Thereby, it is possible to prevent a part of the upper surface of the substrate W from being exposed from the second liquid film F2 in a short period of time.

Next, an exposed hole H exposing the central portion of the upper surface of the substrate W from the second liquid film F2 is formed in the second liquid film F2, and the outer edge of this exposed hole H is exposed to the substrate W ) A liquid discharge process is carried out to expand the outer circumference of the upper surface.

Specifically, in a state in which the blocking member 51 is located at the upper position and at least one guard 24 is located at the upper position, the heating fluid valve 73 is opened, and the lower surface nozzle 71 is configured to open the heating fluid. Discharging of hot water (for example, 45 to 60°C), which is an example, is started. The discharge of hot water may be started before or after the second liquid is supplied to the upper surface of the substrate W, or may be started simultaneously with the second liquid being supplied to the upper surface of the substrate W. The discharge of hot water is stopped after the outer edge of the exposed hole H expands to the outer periphery of the upper surface of the substrate W. After the exposed hole H is formed, the discharge of hot water may be stopped before the outer edge of the exposed hole H extends to the outer periphery of the upper surface of the substrate W.

Additionally, the spin chuck 10 rotates the substrate W at a liquid discharge speed. The liquid discharge speed is greater than the first paddle speed. The liquid discharge rate may be the same as or different from the second replacement rate. In this example, the liquid discharge speed is greater than the first paddle speed and less than the rinse liquid supply speed. When the liquid discharge speed is different from the second displacement speed, the rotation speed of the substrate W may be changed before or after the discharge of hot water starts, or may be changed at the same time as the discharge of hot water starts. In addition, before the discharge of hot water starts, the guard lifting unit 27 moves at least one guard 24 vertically in order to switch the guard 24 that receives the liquid discharged from the substrate W. do.

As shown in FIG. 7C, the lower surface nozzle 71 stops discharging the second liquid to the substrate W, and a substantially circular second liquid film F2 and a ring-shaped first liquid film F1 are formed on the substrate W. While held on the upper surface of the substrate (W), hot water is discharged toward the central portion of the lower surface of the substrate (W). The hot water discharged upward from the lower surface nozzle 71 collides with the central part of the lower surface of the substrate W and then flows outward along the lower surface of the rotating substrate W. As a result, hot water is supplied to the entire lower surface of the substrate W, and the entire substrate W is heated. The first liquid and the second liquid on the upper surface of the substrate W are heated indirectly via the substrate W.

Evaporation of the first liquid and the second liquid is promoted by heating the first liquid and the second liquid. Since the hot water discharged from the lower surface nozzle 71 first collides with the central part of the lower surface of the substrate W, the amount of heat transferred from the hot water to the substrate W increases as it approaches the central part of the lower surface of the substrate W. The evaporation rate of the second liquid is greatest in the central part of the upper surface of the substrate W. Therefore, as shown in FIG. 7D, a substantially circular exposed hole H penetrating the central part of the second liquid film F2 is formed (hole forming process (step S9-2 in FIG. 6)), and the second liquid film F2 is formed. (F2) It changes into this ring shape. As a result, the central portion of the upper surface of the substrate W is exposed from the second liquid film F2.

After the exposed hole H is formed in the central portion of the second liquid film F2, the second liquid forming the inner periphery of the ring-shaped second liquid film F2 evaporates. As a result, the inner diameter of the second liquid film F2 corresponding to the diameter of the exposed hole H is expanded. Additionally, the second liquid on the upper surface of the substrate W flows outward along the upper surface of the substrate W due to centrifugal force, and the inner and outer diameters of the second liquid film F2 expand. The first liquid on the outer periphery of the upper surface of the substrate W is pressed outward by the second liquid and discharged from the substrate W. Thereby, as shown in FIG. 7E, the first liquid film F1 is discharged from the substrate W. After that, as shown in FIG. 7F, the inner periphery of the second liquid film F2 expands to the outer periphery of the upper surface of the substrate W (hole expansion process (step S10-2 in FIG. 6)), and the second liquid film F2 ) is discharged from the substrate (W). As a result, droplets of a size visible to the naked eye disappear from the upper surface of the substrate W, and the entire upper surface of the substrate W is exposed.

The temperature of the hot water may be any value as long as it is higher than room temperature and below the boiling point of water. The temperature of the hot water may be higher than the boiling point of the second liquid. For example, the temperature of the hot water may be slightly higher than the boiling point of the second liquid. Specifically, the value obtained by subtracting the boiling point of the second liquid from the temperature of the hot water may be room temperature or lower. When the temperature of the hot water is above the boiling point of the second liquid, at least the central portion of the upper surface of the substrate W is heated to a temperature above the boiling point of the second liquid.

When the temperature of the hot water is slightly higher than the boiling point of the second liquid, the second liquid is vaporized at least in the central portion of the upper surface of the substrate W, and a large number of small bubbles are interposed between the second liquid and the upper surface of the substrate W. . When the discharge of hot water is started before the supply of the second liquid is started, the second liquid enters between the first liquid and the substrate W due to the difference in specific gravity, and immediately after being supplied to the substrate W (for example, the substrate ( It is vaporized on the upper surface of the substrate W (within 5 seconds after being supplied to W).

When the second liquid is vaporized at the interface between the second liquid film (F2) and the substrate (W), a vapor layer containing the vapor of the second liquid (see FIG. 14A) is between the second liquid film (F2) and the substrate (W). is formed, and the second liquid falls from the upper surface of the substrate W. In this case, if the thickness of the vapor layer is greater than the height of the pattern P1, all the second liquid disappears between the patterns P1. Therefore, the second liquid film F2 can be discharged from the substrate W while preventing collapse of the pattern P1.

Next, a drying process (step S11 in FIG. 6) of drying the substrate W by rotating the substrate W at high speed is performed.

Specifically, the blocking member lifting unit 54 lowers the blocking member 51 from the upper position to the lower position. In this state, the spin chuck 10 rotates the substrate W at a high rotation speed (for example, several thousand rpm) greater than the rinse liquid supply speed. Even if droplets of a size that cannot be seen with the naked eye remain on the upper surface of the substrate W (for example, between the patterns P1), such droplets evaporate while the substrate W is rotating at high speed. Thereby, the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W begins, the spin chuck 10 stops rotating. Thereby, the rotation of the substrate W is stopped (step S12 in FIG. 6).

Next, a unloading process (step S13 in FIG. 6) of unloading the substrate W from the chamber 4 is performed.

Specifically, the blocking member lifting unit 54 raises the blocking member 51 to the upper level, and the guard lifting unit 27 lowers all the guards 24 to the lower level. In addition, the upper gas valve 64 and the lower gas valve 84 are closed, and the upper central opening 61 of the blocking member 51 and the lower central opening 81 of the spin base 12 prevent the discharge of nitrogen gas. Stop it. After that, the center robot CR causes the hand H1 to enter the chamber 4. The center robot CR supports the substrate W on the spin chuck 10 with the hand H1 after the plurality of chuck pins 11 release the grip of the substrate W. After that, the center robot CR supports the substrate W with the hand H1 and retracts the hand H1 from the inside of the chamber 4. As a result, the processed substrate W is taken out of the chamber 4.

Next, a third embodiment will be described.

Since the flow of the third embodiment from the loading process (step S1 in FIG. 8) to the first paddle process (step S6 in FIG. 8) is the same as the first embodiment, the flow after the second replacement process will be described below. Explain.

FIG. 8 is a process diagram for explaining another example (third embodiment) of processing of the substrate W performed by the substrate processing apparatus 1. 9A to 9C are schematic diagrams showing the state of the substrate W when the third embodiment is being implemented. In the following, reference is made to FIGS. 2 and 8. Reference is made to FIGS. 9A to 9C as appropriate.

After the first liquid film F1 is formed, the second liquid is supplied to the upper surface of the substrate W to replace the first liquid on the upper surface of the substrate W with the second liquid (see Figure 8). Step S7-3) is carried out.

Specifically, with the blocking member 51 positioned at the upper position and at least one guard 24 positioned at the upper position, the nozzle moving unit 46 moves the second liquid nozzle 43 from the standby position. Move to processing location. Thereafter, the spin chuck 10 rotates the substrate W at a second displacement speed. The second replacement rate may be the same as or different from the rinse liquid supply rate. The second substitution rate may be the same as or different from the first substitution rate. With the second liquid nozzle 43 positioned above the substrate W, the second liquid valve 45 opens, and the second liquid nozzle 43 starts discharging the second liquid.

Before the discharge of the second liquid starts, the guard lifting unit 27 moves at least one guard 24 vertically to switch the guard 24 that receives the liquid discharged from the substrate W. do. When the second liquid nozzle 43 is discharging the second liquid, the nozzle moving unit 46 moves the liquid landing position of the second liquid on the upper surface of the substrate W so that it passes the central part and the outer peripheral part. You may do this, or you may stop the liquid extraction position at the center. In this example, the nozzle moving unit 46 stops the second liquid nozzle 43 at the central processing position where the second liquid discharged from the second liquid nozzle 43 collides with the central portion of the upper surface of the substrate W. I order it.

When the second liquid is discharged toward the central portion of the upper surface of the substrate W, a substantially circular second liquid film F2 covering the central portion of the upper surface of the substrate W and a ring-shaped second liquid film F2 surrounding the second liquid film F2 are formed. 1 Liquid film F1 is formed on the upper surface of the substrate W. As the discharge of the second liquid continues, the outer diameter of the second liquid film F2 gradually increases and the width of the ring-shaped first liquid film F1 gradually decreases. When a predetermined time elapses after the second liquid valve 45 is opened, the outer periphery of the second liquid film F2 expands to the outer periphery of the upper surface of the substrate W, and all or almost all of the first liquid is converted to the second liquid. is replaced.

After the central portion of the upper surface of the substrate W is covered with the second liquid film F2, an exposure hole H exposing the central portion of the upper surface of the substrate W from the second liquid film F2 is formed. , and a liquid discharge process is performed to expand the outer edge of the exposed hole H to the outer periphery of the upper surface of the substrate W.

Specifically, in a state where the second liquid nozzle 43 is discharging the second liquid, the nozzle moving unit 46 moves the second liquid nozzle 43 from the central processing position to the outer processing position. The central processing position is a position where the second liquid discharged from the second liquid nozzle 43 collides with the central portion of the upper surface of the substrate W. The outer processing position is an outer processing position where the second liquid discharged from the second liquid nozzle 43 collides with the outer peripheral portion of the upper surface of the substrate W.

The nozzle moving unit 46 may move the second liquid nozzle 43 from the central processing position to the outer processing position at a constant speed, or may move the second liquid nozzle 43 while changing the moving speed of the second liquid nozzle 43. ) may be moved from the central processing location to the outsourced processing location. In addition, the movement of the second liquid nozzle 43 may be started before or after the outer circumference of the second liquid film F2 spreads to the outer circumference of the upper surface of the substrate W, and the outer circumference of the second liquid film F2 may be started to extend to the outer circumference of the upper surface of the substrate W. It may be started at the same time as it spreads to the outer periphery of the upper surface of W). FIG. 9A shows an example in which the second liquid nozzle 43 moves from the central processing position before the outer periphery of the second liquid film F2 spreads to the outer periphery of the upper surface of the substrate W.

The spin chuck 10 rotates the substrate W at a liquid discharge speed. The liquid discharge speed is greater than the first paddle speed. The liquid discharge rate may be the same as or different from the second replacement rate. In this example, the liquid discharge speed is greater than the first paddle speed and less than the rinse liquid supply speed. When the liquid discharge speed is different from the second displacement speed, the rotation speed of the substrate W may be changed before or after the movement of the second liquid nozzle 43 begins, It may be changed as soon as it is disclosed.

After the second liquid nozzle 43 moves away from the central processing position, the second liquid discharged from the second liquid nozzle 43 is not supplied to the central portion of the upper surface of the substrate W. In short, no new second liquid is supplied to the central portion of the upper surface of the substrate W. The existing second liquid in the central portion of the upper surface of the substrate W evaporates. Therefore, as shown in FIG. 9B, long after the second liquid nozzle 43 moves away from the central processing position, a substantially circular exposed hole H penetrating the central part of the second liquid film F2 is formed ( In the hole forming process (step S9-3 in FIG. 8), the second liquid film F2 is changed into a ring shape. As a result, the central portion of the upper surface of the substrate W is exposed from the second liquid film F2.

As can be seen by comparing FIGS. 9B and 9C, the inner diameter of the second liquid film F2 corresponding to the diameter of the exposed hole H increases as the second liquid nozzle 43 moves away from the central processing position. do. When there is a ring-shaped first liquid film F1 around the second liquid film F2, the width of the first liquid film F1 decreases as the second liquid nozzle 43 moves away from the central processing position. All of the first liquid constituting the first liquid film F1 is discharged from the substrate W before the second liquid nozzle 43 reaches the outer processing position.

Additionally, when the second liquid nozzle 43 reaches the outer processing position, the second liquid valve 45 is closed and discharge of the second liquid is stopped. After that, the nozzle moving unit 46 moves the second liquid nozzle 43 to the standby position. After the discharge of the second liquid is stopped, the ring-shaped second liquid film F2 remains on the outer peripheral portion of the upper surface of the substrate W, and only the outer peripheral portion of the upper surface of the substrate W is covered with the second liquid. The ring-shaped second liquid film F2 remaining on the upper surface of the substrate W after the discharge of the second liquid is stopped is discharged from the upper surface of the substrate W by centrifugal force (hole expansion process (step S10 in FIG. 8- 3)). As a result, droplets of a size visible to the naked eye disappear from the upper surface of the substrate W, and the entire upper surface of the substrate W is exposed.

Next, a drying process (step S11 in FIG. 8) of drying the substrate W by rotating the substrate W at high speed is performed.

Specifically, the blocking member lifting unit 54 lowers the blocking member 51 from the upper position to the lower position. In this state, the spin chuck 10 rotates the substrate W at a high rotation speed (for example, several thousand rpm) greater than the rinse liquid supply speed. Even if droplets of a size that cannot be seen with the naked eye remain on the upper surface of the substrate W (for example, between the patterns P1), such droplets evaporate while the substrate W is rotating at high speed. Thereby, the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W begins, the spin chuck 10 stops rotating. Thereby, the rotation of the substrate W is stopped (step S12 in FIG. 8).

Next, a unloading process (step S13 in FIG. 8 ) is performed to unload the substrate W from the chamber 4.

Specifically, the blocking member lifting unit 54 raises the blocking member 51 to the upper level, and the guard lifting unit 27 lowers all the guards 24 to the lower level. In addition, the upper gas valve 64 and the lower gas valve 84 are closed, and the upper central opening 61 of the blocking member 51 and the lower central opening 81 of the spin base 12 prevent the discharge of nitrogen gas. Stop it. After that, the center robot CR causes the hand H1 to enter the chamber 4. The center robot CR supports the substrate W on the spin chuck 10 with the hand H1 after the plurality of chuck pins 11 release the grip of the substrate W. After that, the center robot CR supports the substrate W with the hand H1 and retracts the hand H1 from the inside of the chamber 4. As a result, the processed substrate W is taken out of the chamber 4.

Next, the fourth embodiment will be described.

Since the flow of the fourth embodiment from the loading process (step S1 in FIG. 10) to the second paddle process (step S8-3 in FIG. 10) is the same as the third embodiment, the flow after the liquid discharge process will be described below. Explain.

FIG. 10 is a process diagram for explaining another example (fourth embodiment) of processing of the substrate W performed by the substrate processing apparatus 1. 11A to 11C are schematic diagrams showing the state of the substrate W when the fourth embodiment is being implemented. In the following, reference is made to FIGS. 2 and 10. Reference is made to FIGS. 11A to 11C as appropriate.

After the central portion of the upper surface of the substrate W is covered with the second liquid film F2, an exposure hole H exposing the central portion of the upper surface of the substrate W from the second liquid film F2 is formed. , and a liquid discharge process is performed to expand the outer edge of the exposed hole H to the outer periphery of the upper surface of the substrate W.

Specifically, in a state where the blocking member 51 is positioned at the upper position and at least one guard 24 is positioned at the upper position, the upper gas valve 64 is opened and the central nozzle 55 is supplied with nitrogen gas. Starts discharging (see Figure 11a). The temperature of the nitrogen gas discharged from the central nozzle 55 may be room temperature or may exceed room temperature. The discharge of nitrogen gas may be started before or after the outer periphery of the second liquid film F2 extends to the outer periphery of the upper surface of the substrate W, and the outer periphery of the second liquid film F2 may be started to extend to the outer periphery of the upper surface of the substrate W. It may be started at the same time as it is expanded. FIG. 11A shows an example in which the discharge of nitrogen gas starts before the outer periphery of the second liquid film F2 extends to the outer periphery of the upper surface of the substrate W.

The blocking member lifting unit 54 may position the blocking member 51 in the lower position before or after the discharge of nitrogen gas starts, and may position the blocking member 51 in the lower position at the same time as the discharge of nitrogen gas starts. You can position it. When the central nozzle 55 is discharging nitrogen gas, the spin chuck 10 may rotate the substrate W at the liquid discharge speed or may stop the substrate W. The liquid discharge speed is greater than the first paddle speed. The liquid discharge rate may be the same as or different from the second replacement rate. In this example, the liquid discharge speed is greater than the first paddle speed and less than the rinse liquid supply speed. When the liquid discharge speed is different from the second replacement speed, the rotation speed of the substrate W may be changed before or after the discharge of nitrogen gas starts, or may be changed at the same time as the discharge of nitrogen gas starts.

The nitrogen gas discharged from the central nozzle 55 collides with the second liquid film F2 at the central portion of the upper surface of the substrate W and then flows outward in all directions along the surface of the second liquid film F2. As a result, an airflow is formed that flows outward in all directions from the central portion of the upper surface of the substrate W. When nitrogen gas is injected into the central part of the second liquid film F2, the second liquid contained in the second liquid film F2 is pushed outward by the pressure of the nitrogen gas. Additionally, evaporation of the second liquid is promoted by supplying nitrogen gas. As a result, as shown in FIG. 11B, the thickness of the central portion of the second liquid film F2 is reduced, and a substantially circular exposed hole H is formed in the central portion of the second liquid film F2 (hole forming process (FIG. 10 Step S9-4)).

Additionally, a force for moving the second liquid outward is applied to the second liquid on the substrate W from the nitrogen gas flowing outward along the surface of the second liquid film F2, causing the second liquid to move against the upper surface of the substrate W. It flows outwards. When the spin chuck 10 rotates the substrate W, centrifugal force is also applied to the second liquid on the substrate W. As shown in FIG. 11C, the inner diameter and outer diameter of the ring-shaped second liquid film F2 increase as the second liquid flows outward along the upper surface of the substrate W.

When the ring-shaped first liquid film F1 remains on the outer peripheral portion of the upper surface of the substrate W, the first liquid on the outer peripheral portion of the upper surface of the substrate W is pressed outward by the second liquid, thereby forming the substrate W. is emitted from As a result, the first liquid film F1 is discharged from the substrate W. After that, the inner periphery of the second liquid film F2 is expanded to the outer periphery of the upper surface of the substrate W (hole expansion process (step S10-4 in FIG. 10)). Even when no ring-shaped first liquid film F1 remains on the outer periphery of the upper surface of the substrate W, the inner periphery of the second liquid film F2 extends to the outer periphery of the upper surface of the substrate W. As a result, droplets of a size visible to the naked eye disappear from the upper surface of the substrate W, and the entire upper surface of the substrate W is exposed.

Next, a drying process (step S11 in FIG. 10) of drying the substrate W by rotating the substrate W at high speed is performed.

Specifically, when the blocking member 51 is located at the upper position, the blocking member lifting unit 54 lowers the blocking member 51 from the upper position to the lower position. In this state, the spin chuck 10 rotates the substrate W at a high rotation speed (for example, several thousand rpm) greater than the rinse liquid supply speed. Even if droplets of a size that cannot be seen with the naked eye remain on the upper surface of the substrate W (for example, between the patterns P1), such droplets evaporate while the substrate W is rotating at high speed. Thereby, the substrate W is dried. When a predetermined time elapses after the high-speed rotation of the substrate W begins, the spin chuck 10 stops rotating. Thereby, the rotation of the substrate W is stopped (step S12 in FIG. 10).

Next, a unloading process (step S13 in FIG. 10) of unloading the substrate W from the chamber 4 is performed.

Specifically, the blocking member lifting unit 54 raises the blocking member 51 to the upper level, and the guard lifting unit 27 lowers all the guards 24 to the lower level. In addition, the upper gas valve 64 and the lower gas valve 84 are closed, and the upper central opening 61 of the blocking member 51 and the lower central opening 81 of the spin base 12 prevent the discharge of nitrogen gas. Stop it. After that, the center robot CR causes the hand H1 to enter the chamber 4. The center robot CR supports the substrate W on the spin chuck 10 with the hand H1 after the plurality of chuck pins 11 release the grip of the substrate W. After that, the center robot CR supports the substrate W with the hand H1 and retracts the hand H1 from the inside of the chamber 4. As a result, the processed substrate W is taken out of the chamber 4.

As described above, in the first to fourth examples, a rinse liquid containing water is supplied to the upper surface of the substrate W held horizontally. Thereafter, the first liquid is supplied to the upper surface of the substrate W held horizontally. As a result, the rinse liquid on the upper surface of the substrate W is replaced with the first liquid. Thereafter, the second liquid is supplied to the upper surface of the substrate W held horizontally. As a result, the first liquid on the upper surface of the substrate W is replaced with the second liquid. Accordingly, the rinse liquid is replaced with the second liquid step by step. Thereafter, the second liquid is removed from the upper surface of the substrate W, and the substrate W is dried.

The rinse liquid on the substrate W is not directly replaced with the second liquid, but is replaced with the first liquid and then replaced with the second liquid. The solubility of the second liquid in water is less than the solubility of the first liquid in water. That is, the second liquid has a lower affinity for water than the first liquid. When the second liquid is supplied to the upper surface of the substrate W on which the rinse liquid is held, the rinse liquid may remain on the upper surface of the substrate W. If the remaining amount of rinse liquid containing water with high surface tension is large, collapse of the pattern P1 (see FIG. 14A) is likely to occur when the substrate W is dried. By replacing the rinse solution with a first liquid that has a relatively high affinity for water, the amount of rinse solution remaining on the substrate (W) immediately before drying can be reduced.

Additionally, the specific gravity of the second liquid is greater than that of the first liquid. Therefore, at the interface between the first liquid and the second liquid, the second liquid moves toward the upper surface side of the substrate W due to gravity, and the first liquid moves above the second liquid. In short, the second liquid enters between the first liquid and the substrate W due to the difference in specific gravity. In addition, since the surface tension of the second liquid is low and the specific gravity of the second liquid is large, the second liquid enters between the patterns (P1), and the first liquid between the patterns (P1) is replaced by the second liquid. . Since the second liquid having such a low surface tension enters between the patterns P1, when drying the substrate W, even if the surface of the second liquid is formed between the patterns P1, the pattern P1 may collapse. can be reduced.

The boiling point of the second liquid is room temperature or higher. Accordingly, when the second liquid is used in a room temperature environment, the second liquid does not need to be cooled in order to maintain the second liquid as a liquid. Additionally, the value obtained by subtracting room temperature from the boiling point of the second liquid is room temperature or lower. In short, the boiling point of the second liquid is within the range from room temperature to twice room temperature, and is relatively low compared to room temperature. When the boiling point of the second liquid is low, the speed at which the second liquid disappears from the substrate W increases during drying of the substrate W, so the time at which the collapse force that causes the pattern P1 to collapse is applied to the pattern P1 can be shortened. As a result, the collapse of the pattern P1 can be reduced, and the quality of the substrate W after drying can be improved.

In the first to fourth examples, the first liquid on the upper surface of the substrate W is replaced with the second liquid while the substrate W is rotated at low speed. When the supply of the second liquid is started, the upper surface of the substrate W is covered with the substantially circular second liquid film F2 and the ring-shaped first liquid film F1 surrounding the second liquid film F2. After that, the outer circumference of the second liquid film F2 gradually widens toward the outer circumference of the upper surface of the substrate W while remaining substantially circular. When the difference in the properties of the first liquid and the second liquid is large, when the substrate W is rotated at high speed, the outer periphery of the second liquid film F2 does not widen while remaining almost circular, and the first liquid is not surely replaced. There is a risk that it will not happen. This phenomenon can be avoided in advance by rotating the substrate W at low speed.

In the second to fourth examples, only a part of the first liquid on the upper surface of the substrate W is replaced with the second liquid. As a result, the ring-shaped first liquid film F1 remains at least in the outer peripheral portion of the upper surface of the substrate W, and the second liquid collects inside the first liquid film F1. Because the surface tension of the second liquid is low, if all the first liquid on the upper surface of the substrate W is replaced with the second liquid, a thin second liquid film F2 is formed on the upper surface of the substrate W. In addition, since the boiling point of the second liquid is low, when the supply of new second liquid is stopped, the second liquid on the substrate W evaporates immediately, and a part of the upper surface of the substrate W forms a second liquid film (F2) in a short period of time. ) may be exposed from.

In contrast, since the surface tension of the first liquid is higher than the surface tension of the second liquid, the thickness of the first liquid film F1 remaining on the outer peripheral portion of the upper surface of the substrate W is greater than the thickness of the second liquid film F2. . The second liquid supplied to the upper surface of the substrate W collects inside the ring-shaped first liquid film F1. Accordingly, a thick second liquid film F2 is formed inside the first liquid film F1 compared to the case where all the first liquid on the upper surface of the substrate W is replaced with the second liquid. Thereby, it is possible to prevent a part of the upper surface of the substrate W from being exposed from the second liquid film F2 in a short period of time.

In the second to fourth embodiments, while the second liquid film F2 is held on the upper surface of the substrate W, an exposure hole H exposing only a portion of the upper surface of the substrate W is formed through the second liquid film. It is formed in (F2). After that, the outer edge of the exposed hole H is expanded to the outer periphery of the upper surface of the substrate W. As a result, droplets of a size visible to the naked eye disappear from the upper surface of the substrate W, and the entire upper surface of the substrate W is exposed. In short, the second liquid film F2 is discharged from the upper surface of the substrate W while controlling the shape of the second liquid film F2. Therefore, compared to the case where the second liquid film F2 is discharged in a disorderly manner, the quality of the substrate W after drying can be stabilized.

In the second to fourth embodiments, while rotating the substrate W at a low speed, the inner diameter and outer diameter of the ring-shaped second liquid film F2 in which the exposed hole H is formed, and the second liquid film F2 are surrounded. increases the inner diameter of the ring-shaped first liquid film F1. When the difference in properties between the first liquid and the second liquid is large, when the substrate W is rotated at high speed, the outer circumference of the second liquid film F2 remains almost circular and does not extend to the outer circumference of the upper surface of the substrate W. , there is a risk that the first liquid may remain on the outer periphery of the upper surface of the substrate W. This phenomenon can be avoided in advance by rotating the substrate W at low speed.

In the second to fourth embodiments, while rotating the substrate W at a rotation speed exceeding 0 and not exceeding 50 rpm, the inner diameter and outer diameter of the ring-shaped second liquid film F2 in which the exposed hole H is formed are , the inner diameter of the ring-shaped first liquid film F1 surrounding the second liquid film F2 is increased. Since the centrifugal force applied to the second liquid is small, the inner and outer peripheries of the second liquid film F2 slowly widen. As a result, the outer circumference of the second liquid film F2 can be expanded to the outer circumference of the upper surface of the substrate W while remaining substantially circular, and the amount of the first liquid remaining in the outer peripheral portion of the upper surface of the substrate W can be reduced to zero or near zero. It can be reduced.

In the second embodiment, hot water (pure water higher than room temperature), which is an example of a heating fluid with a temperature higher than room temperature, is discharged toward only a portion of the lower surface of the substrate W. After the hot water collides with the lower surface of the substrate W, it spreads along the lower surface of the substrate W. The substrate W is heated by hot water. The second liquid is heated by the substrate W. The amount of evaporation of the second liquid per unit time is greatest on the side opposite to the position where the hot water collides with the lower surface of the substrate W. Therefore, it is possible to control the position where the exposed hole (H) is formed.

In the second embodiment, when forming the exposed hole H in the second liquid film F2 or expanding the outer edge of the exposed hole H toward the outer circumference of the upper surface of the substrate W, an example of a condensation prevention fluid is used. Hot water is supplied to the lower surface of the substrate W, and the temperature of the upper surface of the substrate W is maintained at a value higher than the dew point temperature of the second liquid. After the exposed hole H is formed, at least a portion of the upper surface of the substrate W is exposed, and the vapor of the second liquid floats around the upper surface of the substrate W. Therefore, by maintaining the temperature of the upper surface of the substrate W at a value higher than the dew point temperature of the second liquid, droplets of the second liquid are formed on the exposed portion of the upper surface of the substrate W exposed from the second liquid film F2. You can prevent it from happening. As a result, the collapse of the pattern or the generation of particles in the exposed portion can be reduced.

In the third embodiment, the second liquid is discharged through the second liquid nozzle 43 while rotating the substrate W. Additionally, the position at which the second liquid discharged from the second liquid nozzle 43 collides with the upper surface of the substrate W is moved from the central portion of the upper surface of the substrate W to the outer peripheral side of the upper surface of the substrate W. After moving the second liquid nozzle 43, the supply of new second liquid to the central portion of the upper surface of the substrate W is stopped. Additionally, the second liquid evaporates on the central portion of the upper surface of the substrate W and moves outward from the central portion of the upper surface of the substrate W due to centrifugal force. Therefore, the exposed hole H can be formed in the central portion of the upper surface of the substrate W simply by moving the second liquid nozzle 43 outward.

Next, the second embodiment will be described.

The main difference between the first embodiment and the second embodiment is that a hot plate 92 is formed in place of the lower nozzle 71.

In the following FIGS. 12A, 12B, 13, and 14A to 14C, configurations equivalent to those shown in FIGS. 1A to 11C are given the same reference numerals as in FIG. 1A, etc., and their descriptions are omitted.

Fig. 12A is a schematic diagram of the spin chuck 10, the blocking member 51, and the hot plate 92 according to the second embodiment of the present invention viewed horizontally. FIG. 12B is a schematic diagram of the spin chuck 10 and the hot plate 92 viewed from above. FIG. 12A shows a state in which the blocking member 51 is located at the upper position.

As shown in FIG. 12A, the hot plate 92 is disposed between the substrate W and the spin base 12. The hot plate 92 includes a heating element 93 that generates Joule heat when energized, and an outer case 94 that accommodates the heating element 93. The heating element 93 and the outer case 94 are disposed below the substrate W. The heating element 93 is connected to wiring (not shown) that supplies power to the heating element 93. The temperature of the heating element 93 is changed by the control device 3. When the control device 3 causes the heating element 93 to generate heat, the entire substrate W is heated uniformly.

The outer case 94 of the hot plate 92 includes a disk-shaped base portion 95 disposed below the substrate W, and a plurality of hemispherical protrusions 96 that protrude upward from the upper surface of the base portion 95. ) includes. The upper surface of the base portion 95 is parallel to the lower surface of the substrate W and has an outer diameter smaller than the diameter of the substrate W. The plurality of protrusions 96 contact the lower surface of the substrate W at a position away from the upper surface of the base portion 95 upward. The plurality of protrusions 96 are arranged at a plurality of positions within the upper surface of the base portion 95 so that the substrate W is supported horizontally. The substrate W is supported horizontally with the lower surface of the substrate W spaced upward from the upper surface of the base portion 95.

As shown in FIG. 12B , a plurality of chuck pins 11 are arranged around the hot plate 92 . The center line of the hot plate 92 is disposed on the rotation axis A1 of the substrate W. Even if the spin chuck 10 rotates, the hot plate 92 does not rotate. The outer diameter of the hot plate 92 is smaller than the diameter of the substrate W. The difference between the outer diameter of the hot plate 92 and the diameter of the substrate W is the height of the chuck pin 11 (see Fig. 12a. The upper and lower surfaces from the upper surface 12u of the spin base 12 to the top of the chuck pin 11 length of direction) is smaller than

As shown in FIG. 12A, the hot plate 92 is supported horizontally by a support axis 97 extending downward from the center of the hot plate 92. The hot plate 92 can move up and down with respect to the spin base 12. The hot plate 92 is connected to the plate lifting unit 98 via a support shaft 97. The plate lifting unit 98 vertically raises and lowers the hot plate 92 between the upper position (position indicated by a solid line in FIG. 12A) and the lower position (position indicated by a two-dash line in FIG. 12A). The upper value is the contact position where the hot plate 92 contacts the lower surface of the substrate W. The lower position is a proximate position disposed between the lower surface of the substrate W and the upper surface 12u of the spin base 12 in a state where the hot plate 92 is separated from the substrate W.

The plate lifting unit 98 positions the hot plate 92 at an arbitrary position from the upper position to the lower position. In a state where the substrate W is supported by a plurality of chuck pins 11 and the grip of the substrate W is released, when the hot plate 92 rises to the upper level, the plurality of hot plate 92 The protrusion 96 contacts the lower surface of the substrate W, and the substrate W is supported on the hot plate 92. After that, the substrate W is lifted by the hot plate 92 and falls upward from the plurality of chuck pins 11. In this state, when the hot plate 92 is lowered to the lower value, the substrate W on the hot plate 92 is placed on the plurality of chuck pins 11, and the hot plate 92 is moved away from the substrate W. falls downward. In this way, the substrate W is transferred between the plurality of chuck pins 11 and the hot plate 92.

Next, the fifth embodiment will be described.

Since the flow of the fifth embodiment from the loading process (step S1 in Fig. 13) to the second paddle process (step S8-2 in Fig. 13) is the same as the second embodiment, the flow after the liquid discharge process will be described below. Explain.

FIG. 13 is a process diagram for explaining another example (fifth embodiment) of processing of the substrate W performed by the substrate processing apparatus 1. 14A to 14C are schematic diagrams showing the state of the substrate W when the fifth embodiment is being implemented. Below, reference is made to FIGS. 12A, 12B, and 13. Reference is made to FIGS. 14A to 14C as appropriate.

After the substantially circular second liquid film F2 covering the central portion of the upper surface of the substrate W and the ring-shaped first liquid film F1 surrounding the second liquid film F2 are formed on the upper surface of the substrate W, , an exposed hole (H) exposing the central portion of the upper surface of the substrate (W) from the second liquid film (F2) is formed in the second liquid film (F2), and the outer edge of this exposed hole (H) is formed at the outer edge of the substrate (W). A liquid discharge process is carried out to expand the outer circumference of the upper surface.

Specifically, in a state where the blocking member 51 is positioned at the upper position and at least one guard 24 is positioned at the upper position, the hot plate 92 generates heat and starts heating the substrate W. . The heat generation of the hot plate 92 may be started before or after the second liquid is supplied to the substrate W, or may be started simultaneously with the second liquid being supplied to the substrate W. The hot plate 92 may heat the substrate W in a state in contact with the lower surface of the substrate W, or may heat the substrate W in a state away from the lower surface of the substrate W. The temperature of the substrate W may be changed by changing the temperature of the hot plate 92, or may be changed by changing the distance between the substrate W and the hot plate 92.

When heating the substrate W while the hot plate 92 is in contact with the lower surface of the substrate W, the substrate W is stopped on the hot plate 92 . When heating the substrate W in a state where the hot plate 92 is separated from the lower surface of the substrate W, the spin chuck 10 rotates the substrate W at a liquid discharge speed. The liquid discharge speed is greater than the first paddle speed. The liquid discharge rate may be the same as or different from the second replacement rate. In this example, the liquid discharge speed is greater than the first paddle speed and less than the rinse liquid supply speed. When the liquid discharge rate is different from the second displacement rate, the rotation speed of the substrate W may be changed before or after the heating of the substrate W is started, or may be changed at the same time as the heating of the substrate W is started. do.

As shown in FIG. 14A , when the hot plate 92 heats the substrate W, the first liquid and the second liquid on the upper surface of the substrate W are heated via the substrate W. Thereby, evaporation of the first liquid and the second liquid is promoted. The upper gas valve 64 (see FIG. 2) is opened after the hot plate 92 begins heating the substrate W. Thereby, as shown in FIG. 14B, the center nozzle 55 starts discharging nitrogen gas. The temperature of the nitrogen gas discharged from the central nozzle 55 may be room temperature or may exceed room temperature. The nitrogen gas discharged from the central nozzle 55 collides with the second liquid film F2 at the central portion of the upper surface of the substrate W and then flows outward in all directions along the surface of the second liquid film F2. As a result, an airflow is formed that flows outward in all directions from the central portion of the upper surface of the substrate W.

When nitrogen gas is injected into the central part of the second liquid film F2, the second liquid contained in the second liquid film F2 is pushed outward by the pressure of the nitrogen gas. Additionally, evaporation of the second liquid is promoted by supplying nitrogen gas. As a result, as shown in FIG. 14B, the thickness of the central portion of the second liquid film F2 is reduced, and a substantially circular exposed hole H is formed in the central portion of the second liquid film F2 (hole forming process (FIG. 13 Step S9-5)). Additionally, a force for moving the second liquid outward is applied to the second liquid on the substrate W from the nitrogen gas flowing outward along the surface of the second liquid film F2, causing the second liquid to move against the upper surface of the substrate W. It flows outwards. When the spin chuck 10 rotates the substrate W, centrifugal force is also applied to the second liquid on the substrate W.

The inner diameter and outer diameter of the ring-shaped second liquid film F2 increase as the second liquid flows outward along the upper surface of the substrate W. The first liquid on the outer periphery of the upper surface of the substrate W is pressed outward by the second liquid and discharged from the substrate W. Accordingly, as shown in FIG. 14C, the first liquid film F1 is discharged from the substrate W. After that, the inner periphery of the second liquid film F2 is expanded to the outer periphery of the upper surface of the substrate W (hole expansion process (step S10-5 in FIG. 13)). As a result, droplets of a size visible to the naked eye disappear from the upper surface of the substrate W, and the entire upper surface of the substrate W is exposed.

When the supply of power to the hot plate 92 is started, the entire or almost entire upper surface of the hot plate 92 generates heat. Therefore, compared to the case where a heating fluid such as hot water is discharged toward the central portion of the lower surface of the substrate W, the substrate W can be heated uniformly. As long as the temperature is higher than room temperature, the temperature of the hot plate 92 when heating the substrate W may be any value. The temperature of the hot plate 92 may be equal to or higher than the boiling point of the second liquid. The value obtained by subtracting the boiling point of the second liquid from the temperature of the hot plate 92 may be room temperature or lower.

If the temperature of the upper surface of the substrate W (including the surface of the pattern P1 when the pattern P1 is formed) is higher than the boiling point of the second liquid, the second liquid forms the second liquid film F2. is vaporized at the interface between the second liquid and the substrate W, and a large number of small bubbles are interposed between the second liquid and the upper surface of the substrate W. When the second liquid is vaporized at all places of the interface between the second liquid film (F2) and the substrate (W), a vapor layer containing the vapor of the second liquid (see FIG. 14A) is formed between the second liquid film (F2) and the substrate (W) ) is formed between As a result, the second liquid falls from the upper surface of the substrate W, and the second liquid film F2 floats from the upper surface of the substrate W. At this time, the frictional resistance acting on the second liquid film F2 on the substrate W is small enough to be considered zero. Therefore, the second liquid film F2 can be discharged from the upper surface of the substrate W with a small force.

Next, a drying process (step S11 in FIG. 13) of drying the substrate W by rotating the substrate W at high speed is performed.

Specifically, when the hot plate 92 supports the lower surface of the substrate W, the substrate W is passed from the hot plate 92 to the plurality of chuck pins 11, and the plurality of chuck pins ( 11) Hold this substrate (W). Additionally, the blocking member lifting unit 54 lowers the blocking member 51 from the upper position to the lower position. In this state, the spin chuck 10 rotates the substrate W at a high rotation speed (for example, several thousand rpm) greater than the rinse liquid supply speed. Even if droplets of a size that cannot be seen with the naked eye remain on the upper surface of the substrate W (for example, between the patterns P1), such droplets evaporate while the substrate W is rotating at high speed. Thereby, the substrate W is dried. While the substrate W is rotating at high speed, the hot plate 92 may generate heat to promote evaporation of the liquid droplets. When a predetermined time elapses after the high-speed rotation of the substrate W begins, the spin chuck 10 stops rotating. Thereby, the rotation of the substrate W is stopped (step S12 in FIG. 13).

Next, a carrying out process (step S13 in FIG. 13) of unloading the substrate W from the chamber 4 is performed.

Specifically, the blocking member lifting unit 54 raises the blocking member 51 to the upper level, and the guard lifting unit 27 lowers all the guards 24 to the lower level. In addition, the upper gas valve 64 and the lower gas valve 84 are closed, and the upper central opening 61 of the blocking member 51 and the lower central opening 81 of the spin base 12 prevent the discharge of nitrogen gas. Stop it. After that, the center robot CR causes the hand H1 to enter the chamber 4. The center robot CR supports the substrate W on the spin chuck 10 with the hand H1 after the plurality of chuck pins 11 release the grip of the substrate W. After that, the center robot CR supports the substrate W with the hand H1 and retracts the hand H1 from the inside of the chamber 4. As a result, the processed substrate W is taken out of the chamber 4.

In the second embodiment, in addition to the effects related to the first embodiment, the following effects can be achieved. Specifically, in the fifth embodiment, the hot plate 92, which is an example of a heater disposed below the substrate W so as to overlap the substrate W when viewed in plan, generates heat. The substrate W is heated by the hot plate 92. The second liquid is heated by the substrate W. As a result, the exposed hole H penetrating the second liquid film F2 can be formed. Additionally, the hot plate 92 can directly heat a wider area compared to the case where heating fluid higher than room temperature is discharged toward only a portion of the lower surface of the substrate W. Thereby, the substrate W and the second liquid film F2 can be heated uniformly.

In the fifth embodiment, when forming the exposed hole H in the second liquid film F2 or expanding the outer edge of the exposed hole H toward the outer periphery of the upper surface of the substrate W, the hot plate 92 The substrate W is heated to maintain the temperature of the upper surface of the substrate W at a value higher than the dew point temperature of the second liquid. After the exposed hole H is formed, at least a portion of the upper surface of the substrate W is exposed, and the vapor of the second liquid floats around the upper surface of the substrate W. Therefore, by maintaining the temperature of the upper surface of the substrate W at a value higher than the dew point temperature of the second liquid, droplets of the second liquid are formed on the exposed portion of the upper surface of the substrate W exposed from the second liquid film F2. You can prevent it from happening. As a result, the collapse of the pattern P1 and the generation of particles in the exposed portion can be reduced.

Other Embodiments

The present invention is not limited to the content of the above-described embodiments, and various changes are possible.

For example, in the first to fifth embodiments, at least one of the first paddle process and the second paddle process may be omitted.

In the first to fifth examples, the first liquid on the upper surface of the substrate W may be replaced with the second liquid while the substrate W is stopped.

In the second to fifth embodiments, the hole forming step and the hole expanding step may be omitted. In other words, after the first liquid film F1 and the second liquid film F2 are held on the upper surface of the substrate W, a drying process may be performed without forming the exposed hole H.

In the second embodiment, a heating fluid such as hot water is not supplied to the lower surface of the substrate W, but an exposed hole H is formed, and the outer edge of the exposed hole H is aligned with the outer periphery of the upper surface of the substrate W. You can expand it to . When the substrate W is rotated while stopping the supply of new second liquid to the upper surface of the substrate W, the thickness of the second liquid film F2 gradually decreases. Additionally, the second liquid flows from the inside to positions other than the central portion of the upper surface of the substrate W, but the second liquid does not flow to the central portion of the upper surface of the substrate W. Accordingly, long after the supply of the second liquid is stopped, the exposed hole H penetrating the second liquid film F2 is formed. Thereby, the exposed hole H can be formed just by rotating the substrate W.

In the fourth embodiment, after the exposed hole H is formed in the second liquid film F2 by supply of nitrogen gas, the position at which the nitrogen gas collides with the upper surface of the substrate W is defined as the upper surface of the substrate W. It may be moved from the central part to the outer peripheral part of the upper surface of the substrate W. In this case, the nitrogen gas can be discharged not through the central nozzle 55 disposed in the center of the blocking member 51, but through a scan nozzle that can move horizontally within the chamber 4.

In examples other than the second and fifth embodiments, when forming the exposed hole H in the second liquid film F2, the outer edge of the exposed hole H is aligned with the outer periphery of the upper surface of the substrate W. When expanding laterally, the temperature of the upper surface of the substrate W may be maintained at a value higher than the dew point temperature of the second liquid. In this case, a room temperature fluid (for example, room temperature pure water) may be supplied to the lower surface of the substrate W, as long as the temperature of the upper surface of the substrate W is maintained at a value higher than the dew point temperature of the second liquid.

In the second embodiment, a heater other than the hot plate 92 may be disposed below the substrate W. The heater may be a lamp or may be other than the hot plate 92 and the lamp. The lamp may be an infrared lamp that emits infrared rays (for example, near infrared rays), an LED lamp containing a light-emitting diode, or may be other than these.

In addition to the disk portion 52, the blocking member 51 may include a cylindrical portion extending downward from the outer peripheral portion of the disk portion 52. In this case, when the blocking member 51 is disposed at the lower tooth, the substrate W held by the spin chuck 10 is surrounded by the cylindrical portion.

The blocking member 51 may rotate around the rotation axis A1 together with the spin chuck 10. For example, the blocking member 51 may be placed on the spin base 12 so as not to contact the substrate W. In this case, since the blocking member 51 is connected to the spin base 12, the blocking member 51 rotates in the same direction and at the same speed as the spin base 12.

The blocking member 51 may be omitted. However, when supplying a liquid such as pure water to the lower surface of the substrate W, it is preferable that the blocking member 51 is formed. This is because liquid droplets that have returned from the lower surface of the substrate W to the upper surface of the substrate W along the outer peripheral surface of the substrate W or liquid droplets that bounce inward from the processing cup 21 can be blocked by the blocking member 51. .

The substrate processing apparatus 1 is not limited to an apparatus that processes a circular substrate W, and may be an apparatus that processes a polygonal substrate W.

Two or more of all the above-described configurations may be combined. Two or more of all the above processes may be combined.

The plurality of chuck pins 11 are an example of a substrate holding unit. The rinse liquid nozzle 35 is an example of a rinse liquid supply unit. The first liquid nozzle 39 is an example of the first replacement unit. The second liquid nozzle 43 is an example of a second replacement unit. The spin motor 14 is an example of a drying unit.

Although the embodiments of the present invention have been described in detail, these are only specific examples used to clarify the technical content of the present invention, and the present invention should not be construed as limited to these specific examples, and the spirit and scope of the present invention The scope is limited only by the appended claims.

1 Substrate processing device
10 spin chuck
11 chuck pin
14 spin motor
35 Rinse liquid nozzle
39 First liquid nozzle
43 Second liquid nozzle
55 center nozzle
71 lower nozzle
73 Heated Fluid Valve
75 heater
92 hot plate
A1 rotation axis
F1 1st amulet
F2 2nd amulet
H exposed ball
P1 pattern
W substrate

Claims (13)

As a method of drying the substrate while holding the substrate horizontal,
a rinse liquid supply process of supplying a rinse liquid containing water to the upper surface of the substrate;
a first substitution process of replacing the rinse liquid on the upper surface of the substrate with the first liquid by supplying the first liquid to the upper surface of the substrate;
a second substitution process of replacing the first liquid on the upper surface of the substrate with the second liquid by supplying the second liquid to the upper surface of the substrate;
A drying process of drying the substrate by removing the second liquid on the upper surface of the substrate,
the solubility of the second liquid in water is less than the solubility of the first liquid in water,
The surface tension of the second liquid is lower than the surface tension of the first liquid,
The specific gravity of the second liquid is greater than the specific gravity of the first liquid,
The boiling point of the second liquid is above room temperature, and the value obtained by subtracting the room temperature from the boiling point of the second liquid is below the room temperature,
The second replacement process stops the supply of the second liquid to the substrate before all of the liquid film of the first liquid disappears from the upper surface of the substrate, so that only a portion of the first liquid on the upper surface of the substrate is removed. Comprising a partial substitution process in which the liquid film of the second liquid and the liquid film of the first liquid surrounding the liquid film of the second liquid are maintained on the upper surface of the substrate by replacing with the second liquid. Substrate processing method. According to claim 1,
The rinse liquid supply process includes supplying the rinse liquid to the upper surface of the substrate while rotating the substrate at a rinse liquid supply speed,
The second displacement process includes supplying the second liquid to the upper surface of the substrate while rotating the substrate at a second displacement speed that is smaller than the rinse liquid supply speed. delete The method of claim 1 or 2,
The substrate processing method further includes a liquid discharge process of discharging the liquid film of the second liquid from the upper surface of the substrate before the drying process,
The liquid discharge process includes a hole forming process of forming an exposed hole in the liquid film of the second liquid, exposing only a portion of the upper surface of the substrate, and a hole expansion process of expanding the outer edge of the exposed hole to the outer periphery of the upper surface of the substrate. Including, a substrate processing method. According to claim 4,
The rinse liquid supply process includes supplying the rinse liquid to the upper surface of the substrate while rotating the substrate at a rinse liquid supply speed,
The hole expansion process includes a process of expanding the outer edge of the exposed hole to the outer periphery of the upper surface of the substrate while rotating the substrate at a liquid discharge speed that is less than the rinse liquid supply speed. According to claim 4,
The hole expansion step includes a step of expanding the outer edge of the exposed hole to the outer periphery of the upper surface of the substrate while rotating the substrate at a rotation speed exceeding 0 and being 50 rpm or less. According to claim 4,
The hole forming step includes a heating fluid supply step of discharging a heating fluid higher than the room temperature toward only a portion of the lower surface of the substrate. According to claim 4,
The hole forming step is a substrate processing method including a uniform heating step of generating heat in a heater disposed below the substrate so as to overlap the substrate when viewed in plan. According to claim 4,
The hole forming process rotates the substrate around a vertical rotation axis passing through the center of the upper surface of the substrate, and discharges the second liquid toward the upper surface of the substrate, so that the second liquid is A substrate processing method comprising a scanning step of moving the position of impact on the upper surface from the central portion of the upper surface of the substrate to the outer peripheral side of the upper surface of the substrate. According to claim 4,
A substrate processing method comprising, in parallel with the liquid discharge process, a condensation prevention process of maintaining the temperature of the upper surface of the substrate at a value higher than the dew point temperature of the second liquid. a substrate holding unit that holds the substrate horizontally;
a rinse liquid supply unit that supplies a rinse liquid containing water to the upper surface of the substrate held in the substrate holding unit;
a first replacement unit for replacing the rinse liquid on the upper surface of the substrate with the first liquid by supplying the first liquid to the upper surface of the substrate held in the substrate holding unit;
a second replacement unit for replacing the first liquid on the upper surface of the substrate with the second liquid by supplying a second liquid to the upper surface of the substrate held in the substrate holding unit;
a drying unit that dries the substrate by removing the second liquid on the upper surface of the substrate held in the substrate holding unit,
the solubility of the second liquid in water is less than the solubility of the first liquid in water,
The surface tension of the second liquid is lower than the surface tension of the first liquid,
The specific gravity of the second liquid is greater than the specific gravity of the first liquid,
The boiling point of the second liquid is above room temperature, and the value obtained by subtracting the room temperature from the boiling point of the second liquid is below the room temperature,
The second displacement unit stops the supply of the second liquid to the substrate before all of the liquid film of the first liquid disappears from the upper surface of the substrate, so that only a portion of the first liquid on the upper surface of the substrate A partial replacement unit that maintains the liquid film of the second liquid and the liquid film of the first liquid surrounding the liquid film of the second liquid in a state maintained on the upper surface of the substrate by replacing with the second liquid, Substrate processing equipment. As a method of drying the substrate while holding the substrate horizontal,
a rinse liquid supply process of supplying a rinse liquid containing water to the upper surface of the substrate;
a first substitution process of replacing the rinse liquid on the upper surface of the substrate with the first liquid by supplying the first liquid to the upper surface of the substrate;
a second substitution process of replacing the first liquid on the upper surface of the substrate with the second liquid by supplying the second liquid to the upper surface of the substrate;
A drying process of drying the substrate by removing the second liquid on the upper surface of the substrate,
The surface tension of the second liquid is lower than the surface tension of the first liquid,
The specific gravity of the second liquid is greater than the specific gravity of the first liquid,
The second replacement process stops the supply of the second liquid to the substrate before all of the liquid film of the first liquid disappears from the upper surface of the substrate, so that only a portion of the first liquid on the upper surface of the substrate is removed. Comprising a partial substitution process in which the liquid film of the second liquid and the liquid film of the first liquid surrounding the liquid film of the second liquid are maintained on the upper surface of the substrate by replacing with the second liquid. Substrate processing method. a substrate holding unit that holds the substrate horizontally;
a rinse liquid supply unit that supplies a rinse liquid containing water to the upper surface of the substrate held in the substrate holding unit;
a first replacement unit for replacing the rinse liquid on the upper surface of the substrate with the first liquid by supplying the first liquid to the upper surface of the substrate held in the substrate holding unit;
a second replacement unit for replacing the first liquid on the upper surface of the substrate with the second liquid by supplying a second liquid to the upper surface of the substrate held in the substrate holding unit;
a drying unit that dries the substrate by removing the second liquid on the upper surface of the substrate held in the substrate holding unit,
The surface tension of the second liquid is lower than the surface tension of the first liquid,
The specific gravity of the second liquid is greater than the specific gravity of the first liquid,
The second displacement unit stops the supply of the second liquid to the substrate before all of the liquid film of the first liquid disappears from the upper surface of the substrate, so that only a portion of the first liquid on the upper surface of the substrate A partial replacement unit that maintains the liquid film of the second liquid and the liquid film of the first liquid surrounding the liquid film of the second liquid in a state maintained on the upper surface of the substrate by replacing with the second liquid, Substrate processing equipment.