KR102626138B1 - 피처리체의 처리 방법 - Google Patents

피처리체의 처리 방법 Download PDF

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Publication number
KR102626138B1
KR102626138B1 KR1020160128933A KR20160128933A KR102626138B1 KR 102626138 B1 KR102626138 B1 KR 102626138B1 KR 1020160128933 A KR1020160128933 A KR 1020160128933A KR 20160128933 A KR20160128933 A KR 20160128933A KR 102626138 B1 KR102626138 B1 KR 102626138B1
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KR
South Korea
Prior art keywords
processing
etching
gas
film
mask
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KR1020160128933A
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English (en)
Korean (ko)
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KR20170041154A (ko
Inventor
요시히데 기하라
도루 히사마츠
마사노부 혼다
도모유키 오이시
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20170041154A publication Critical patent/KR20170041154A/ko
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Publication of KR102626138B1 publication Critical patent/KR102626138B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
KR1020160128933A 2015-10-06 2016-10-06 피처리체의 처리 방법 KR102626138B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2015-198649 2015-10-06
JP2015198649 2015-10-06
JP2016101357A JP6537473B2 (ja) 2015-10-06 2016-05-20 被処理体を処理する方法
JPJP-P-2016-101357 2016-05-20

Publications (2)

Publication Number Publication Date
KR20170041154A KR20170041154A (ko) 2017-04-14
KR102626138B1 true KR102626138B1 (ko) 2024-01-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160128933A KR102626138B1 (ko) 2015-10-06 2016-10-06 피처리체의 처리 방법

Country Status (4)

Country Link
JP (1) JP6537473B2 (ja)
KR (1) KR102626138B1 (ja)
CN (1) CN107026081B (ja)
TW (1) TWI709996B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
KR102582762B1 (ko) * 2017-05-11 2023-09-25 주성엔지니어링(주) 기판 처리 방법 및 그를 이용한 유기 발광 소자 제조 방법
JP6877290B2 (ja) * 2017-08-03 2021-05-26 東京エレクトロン株式会社 被処理体を処理する方法
JP7145031B2 (ja) * 2017-12-25 2022-09-30 東京エレクトロン株式会社 基板を処理する方法、プラズマ処理装置、及び基板処理装置
CN110010464B (zh) * 2017-12-25 2023-07-14 东京毅力科创株式会社 处理基板的方法
JP2019114692A (ja) 2017-12-25 2019-07-11 東京エレクトロン株式会社 成膜方法
JP7089881B2 (ja) * 2018-01-10 2022-06-23 東京エレクトロン株式会社 成膜方法
JP6910319B2 (ja) * 2018-04-23 2021-07-28 東京エレクトロン株式会社 有機領域をエッチングする方法
JP7178918B2 (ja) * 2019-01-30 2022-11-28 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び処理システム
CN111627809B (zh) * 2019-02-28 2024-03-22 东京毅力科创株式会社 基片处理方法和基片处理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100732A (ja) 2001-09-26 2003-04-04 Nec Yamagata Ltd プラズマｃｖｄ装置のプリコート方法
JP2010219105A (ja) 2009-03-13 2010-09-30 Tokyo Electron Ltd 基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040018742A1 (en) * 2002-07-25 2004-01-29 Applied Materials, Inc. Forming bilayer resist patterns
US6803315B2 (en) * 2002-08-05 2004-10-12 International Business Machines Corporation Method for blocking implants from the gate of an electronic device via planarizing films
KR100480610B1 (ko) * 2002-08-09 2005-03-31 삼성전자주식회사 실리콘 산화막을 이용한 미세 패턴 형성방법
JP2007294905A (ja) * 2006-03-30 2007-11-08 Hitachi High-Technologies Corp 半導体製造方法およびエッチングシステム
JP5100057B2 (ja) * 2006-08-18 2012-12-19 東京エレクトロン株式会社 半導体装置の製造方法
JP5236225B2 (ja) * 2007-07-31 2013-07-17 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4733214B1 (ja) * 2010-04-02 2011-07-27 東京エレクトロン株式会社 マスクパターンの形成方法及び半導体装置の製造方法
JP5956933B2 (ja) * 2013-01-15 2016-07-27 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6230898B2 (ja) * 2013-12-13 2017-11-15 東京エレクトロン株式会社 エッチング方法
JP6462477B2 (ja) * 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100732A (ja) 2001-09-26 2003-04-04 Nec Yamagata Ltd プラズマｃｖｄ装置のプリコート方法
JP2010219105A (ja) 2009-03-13 2010-09-30 Tokyo Electron Ltd 基板処理方法

Also Published As

Publication number Publication date
TWI709996B (zh) 2020-11-11
KR20170041154A (ko) 2017-04-14
CN107026081A (zh) 2017-08-08
TW201724162A (zh) 2017-07-01
JP6537473B2 (ja) 2019-07-03
CN107026081B (zh) 2020-05-15
JP2017073535A (ja) 2017-04-13

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