KR102593380B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

Info

Publication number
KR102593380B1
KR102593380B1 KR1020160082516A KR20160082516A KR102593380B1 KR 102593380 B1 KR102593380 B1 KR 102593380B1 KR 1020160082516 A KR1020160082516 A KR 1020160082516A KR 20160082516 A KR20160082516 A KR 20160082516A KR 102593380 B1 KR102593380 B1 KR 102593380B1
Authority
KR
South Korea
Prior art keywords
insulating material
layer
semiconductor device
thin film
metal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020160082516A
Other languages
English (en)
Korean (ko)
Other versions
KR20170004882A (ko
Inventor
키미노리 이시도
미치아키 타마카와
도시히로 이와사키
Original Assignee
가부시키가이샤 앰코테크놀로지재팬
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 앰코테크놀로지재팬 filed Critical 가부시키가이샤 앰코테크놀로지재팬
Publication of KR20170004882A publication Critical patent/KR20170004882A/ko
Priority to KR1020230140340A priority Critical patent/KR102855741B1/ko
Application granted granted Critical
Publication of KR102593380B1 publication Critical patent/KR102593380B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L24/94
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H01L21/76804
    • H01L21/76834
    • H01L21/76838
    • H01L23/142
    • H01L23/147
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435Cross-sectional shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/121Arrangements for protection of devices protecting against mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/04Manufacture or treatment of leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H01L2224/02379
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • H10W70/654Top-view layouts
    • H10W70/655Fan-out layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9413Dispositions of bond pads on encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020160082516A 2015-07-03 2016-06-30 반도체장치 및 그 제조방법 Active KR102593380B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020230140340A KR102855741B1 (ko) 2015-07-03 2023-10-19 반도체장치 및 그 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-134137 2015-07-03
JP2015134137A JP2017017238A (ja) 2015-07-03 2015-07-03 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020230140340A Division KR102855741B1 (ko) 2015-07-03 2023-10-19 반도체장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20170004882A KR20170004882A (ko) 2017-01-11
KR102593380B1 true KR102593380B1 (ko) 2023-10-24

Family

ID=57683221

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020160082516A Active KR102593380B1 (ko) 2015-07-03 2016-06-30 반도체장치 및 그 제조방법
KR1020230140340A Active KR102855741B1 (ko) 2015-07-03 2023-10-19 반도체장치 및 그 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020230140340A Active KR102855741B1 (ko) 2015-07-03 2023-10-19 반도체장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US10256196B2 (https=)
JP (1) JP2017017238A (https=)
KR (2) KR102593380B1 (https=)
CN (2) CN106328607B (https=)
TW (1) TWI771273B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9659911B1 (en) * 2016-04-20 2017-05-23 Powertech Technology Inc. Package structure and manufacturing method thereof
JP6936584B2 (ja) * 2017-02-22 2021-09-15 株式会社アムコー・テクノロジー・ジャパン 電子デバイス及びその製造方法
EP3373714B1 (en) * 2017-03-08 2023-08-23 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Hybrid component carrier and method for manufacturing the same
JP6988360B2 (ja) * 2017-10-18 2022-01-05 昭和電工マテリアルズ株式会社 半導体装置の製造方法及び半導体装置
JP6816046B2 (ja) 2018-02-06 2021-01-20 アオイ電子株式会社 半導体装置の製造方法
US11183474B2 (en) * 2019-11-04 2021-11-23 Advanced Semiconductor Engineering, Inc. Electronic device package and method for manufacturing the same
US12046523B2 (en) * 2019-11-12 2024-07-23 Advanced Semiconductor Engineering, Inc. Semiconductor device packages and methods of manufacturing the same
CN113921473B (zh) 2020-07-10 2024-11-08 江苏长电科技股份有限公司 封装结构和封装结构制造方法
KR102916276B1 (ko) * 2020-09-02 2026-01-22 에스케이하이닉스 주식회사 3차원 구조의 반도체 장치
US12278029B2 (en) * 2021-12-17 2025-04-15 Globalfoundries Singapore Pte. Ltd Heat dissipating structures

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033114A (ja) * 2007-06-29 2009-02-12 Tdk Corp 電子モジュール、及び電子モジュールの製造方法
WO2009150985A1 (ja) 2008-06-12 2009-12-17 住友ベークライト株式会社 半導体素子搭載基板
JP2015018979A (ja) * 2013-07-12 2015-01-29 イビデン株式会社 プリント配線板
JP2015028986A (ja) * 2013-07-30 2015-02-12 イビデン株式会社 プリント配線板及びプリント配線板の製造方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041699A (en) * 1990-05-29 1991-08-20 Motorola, Inc. Laminated thermally conductive substrate
US5674785A (en) * 1995-11-27 1997-10-07 Micron Technology, Inc. Method of producing a single piece package for semiconductor die
US6221693B1 (en) * 1999-06-14 2001-04-24 Thin Film Module, Inc. High density flip chip BGA
JP2002121207A (ja) * 2000-10-16 2002-04-23 Kanegafuchi Chem Ind Co Ltd 組成物とそれを用いた感光性組成物及びカバーレイ
JP2003007916A (ja) * 2001-06-19 2003-01-10 Sanyo Electric Co Ltd 回路装置の製造方法
CA2464078C (en) * 2002-08-09 2010-01-26 Casio Computer Co., Ltd. Semiconductor device and method of manufacturing the same
JP4096774B2 (ja) * 2003-03-24 2008-06-04 セイコーエプソン株式会社 半導体装置、電子デバイス、電子機器、半導体装置の製造方法及び電子デバイスの製造方法
US8143095B2 (en) * 2005-03-22 2012-03-27 Tessera, Inc. Sequential fabrication of vertical conductive interconnects in capped chips
JP2007059821A (ja) * 2005-08-26 2007-03-08 Shinko Electric Ind Co Ltd 配線基板の製造方法
US20080044639A1 (en) * 2006-06-26 2008-02-21 Kwok Pong Chan Polyimide solvent cast films having a low coefficient of thermal expansion and method of manufacture thereof
TWI325745B (en) * 2006-11-13 2010-06-01 Unimicron Technology Corp Circuit board structure and fabrication method thereof
TWI323934B (en) * 2006-12-15 2010-04-21 Unimicron Technology Corp Pcb structre having embedded semiconductor chip and fabrication method thereof
EP2009692A1 (en) * 2007-06-29 2008-12-31 TDK Corporation Electronic module and fabrication method thereof
JP2009130054A (ja) * 2007-11-21 2009-06-11 Shinko Electric Ind Co Ltd 配線基板及びその製造方法
JP2010010644A (ja) * 2008-05-27 2010-01-14 Toshiba Corp 半導体装置の製造方法
US8692135B2 (en) * 2008-08-27 2014-04-08 Nec Corporation Wiring board capable of containing functional element and method for manufacturing same
US7858441B2 (en) * 2008-12-08 2010-12-28 Stats Chippac, Ltd. Semiconductor package with semiconductor core structure and method of forming same
JP2010219489A (ja) 2009-02-20 2010-09-30 Toshiba Corp 半導体装置およびその製造方法
JP2010251688A (ja) 2009-03-25 2010-11-04 Nec Toppan Circuit Solutions Inc 部品内蔵印刷配線板及びその製造方法
JP5237242B2 (ja) * 2009-11-27 2013-07-17 日東電工株式会社 配線回路構造体およびそれを用いた半導体装置の製造方法
US8508954B2 (en) * 2009-12-17 2013-08-13 Samsung Electronics Co., Ltd. Systems employing a stacked semiconductor package
US8198551B2 (en) * 2010-05-18 2012-06-12 Endicott Interconnect Technologies, Inc. Power core for use in circuitized substrate and method of making same
JP2013191690A (ja) * 2012-03-13 2013-09-26 Shin Etsu Chem Co Ltd 半導体装置及びその製造方法
US8658473B2 (en) * 2012-03-27 2014-02-25 General Electric Company Ultrathin buried die module and method of manufacturing thereof
US9431369B2 (en) * 2012-12-13 2016-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Antenna apparatus and method
JP5677406B2 (ja) 2012-12-26 2015-02-25 本田技研工業株式会社 内燃機関の自動停止始動制御装置
CN105144373A (zh) * 2013-03-15 2015-12-09 三菱电机株式会社 半导体装置
JP6013960B2 (ja) * 2013-03-28 2016-10-25 京セラ株式会社 配線基板
CN103268862B (zh) * 2013-05-03 2016-12-28 日月光半导体制造股份有限公司 半导体封装构造及其制造方法
US10446335B2 (en) * 2013-08-08 2019-10-15 Zhuhai Access Semiconductor Co., Ltd. Polymer frame for a chip, such that the frame comprises at least one via in series with a capacitor
CN104576620B (zh) * 2013-10-22 2017-06-20 日月光半导体制造股份有限公司 半导体封装结构与其制造方法
CN104241219B (zh) * 2014-08-26 2019-06-21 日月光半导体制造股份有限公司 元件嵌入式封装结构和其制造方法
CN106256542B (zh) * 2015-06-17 2019-03-26 长兴材料工业股份有限公司 聚酰亚胺树脂及含聚酰亚胺树脂的金属被覆积层板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033114A (ja) * 2007-06-29 2009-02-12 Tdk Corp 電子モジュール、及び電子モジュールの製造方法
WO2009150985A1 (ja) 2008-06-12 2009-12-17 住友ベークライト株式会社 半導体素子搭載基板
JP2015018979A (ja) * 2013-07-12 2015-01-29 イビデン株式会社 プリント配線板
JP2015028986A (ja) * 2013-07-30 2015-02-12 イビデン株式会社 プリント配線板及びプリント配線板の製造方法

Also Published As

Publication number Publication date
KR20230149283A (ko) 2023-10-26
US10256196B2 (en) 2019-04-09
TWI771273B (zh) 2022-07-21
CN106328607B (zh) 2021-05-25
TW201709468A (zh) 2017-03-01
CN106328607A (zh) 2017-01-11
US20170005044A1 (en) 2017-01-05
JP2017017238A (ja) 2017-01-19
KR20170004882A (ko) 2017-01-11
KR102855741B1 (ko) 2025-09-08
CN111524863A (zh) 2020-08-11

Similar Documents

Publication Publication Date Title
KR102855741B1 (ko) 반도체장치 및 그 제조방법
US8305766B2 (en) Electronic component-embedded printed circuit board and method of manufacturing the same
CN102738116B (zh) 电子部件内藏基板以及其制造方法
US11452199B2 (en) Electronic module with single or multiple components partially surrounded by a thermal decoupling gap
CN1768559A (zh) 多层印刷电路板
US20080142951A1 (en) Circuit board structure with embedded semiconductor chip
US7602062B1 (en) Package substrate with dual material build-up layers
KR20190023297A (ko) 절연 필름 및 이를 구비한 회로 기판
US20250285925A1 (en) Component Carrier and Method of Manufacturing the Same
US8829361B2 (en) Wiring board and mounting structure using the same
US11551989B2 (en) Component carrier and method of manufacturing the same
CN120224780A (zh) 一种玻璃基三维互连结构及基于其的封装架构
JP2011151048A (ja) 電子部品の製造方法および電子部品
JP2020065088A (ja) 半導体装置及びその製造方法
CN103458629A (zh) 多层电路板及其制作方法
KR20130051124A (ko) 폴리이미드 코어를 이용한 박형 다층 인쇄회로기판 및 그 제조방법
CN113130438B (zh) 部件承载件及其制造方法
EP4677960A1 (en) Component carrier and method of manufacturing the same
KR20110131047A (ko) 매립형 인쇄회로기판 제조방법 및 매립형 인쇄회로기판 제조용 구조물
TW202333314A (zh) 半導體封裝及半導體裝置
TW202534895A (zh) 安裝構造體
KR20170002259A (ko) 인쇄회로기판 및 그 제조방법
KR20160074398A (ko) 반도체 장치
JP2013128000A (ja) パッケージ基板及びその製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
GRNT Written decision to grant
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000