KR102590304B1 - 증발원 장치, 증착 장치 및 증착 시스템 - Google Patents

증발원 장치, 증착 장치 및 증착 시스템 Download PDF

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Publication number
KR102590304B1
KR102590304B1 KR1020180125114A KR20180125114A KR102590304B1 KR 102590304 B1 KR102590304 B1 KR 102590304B1 KR 1020180125114 A KR1020180125114 A KR 1020180125114A KR 20180125114 A KR20180125114 A KR 20180125114A KR 102590304 B1 KR102590304 B1 KR 102590304B1
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KR
South Korea
Prior art keywords
source device
evaporation source
container
evaporation
cooling
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KR1020180125114A
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English (en)
Korean (ko)
Other versions
KR20190135901A (ko
Inventor
유키 스가와라
Original Assignee
캐논 톡키 가부시키가이샤
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Publication of KR20190135901A publication Critical patent/KR20190135901A/ko
Application granted granted Critical
Publication of KR102590304B1 publication Critical patent/KR102590304B1/ko

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225Oblique incidence of vaporised material on substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020180125114A 2018-05-29 2018-10-19 증발원 장치, 증착 장치 및 증착 시스템 KR102590304B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018102198A JP6686069B2 (ja) 2018-05-29 2018-05-29 蒸発源装置、蒸着装置、および蒸着システム
JPJP-P-2018-102198 2018-05-29

Publications (2)

Publication Number Publication Date
KR20190135901A KR20190135901A (ko) 2019-12-09
KR102590304B1 true KR102590304B1 (ko) 2023-10-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180125114A KR102590304B1 (ko) 2018-05-29 2018-10-19 증발원 장치, 증착 장치 및 증착 시스템

Country Status (3)

Country Link
JP (1) JP6686069B2 (zh)
KR (1) KR102590304B1 (zh)
CN (1) CN110541146B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109321883B (zh) * 2018-10-15 2020-10-27 武汉华星光电半导体显示技术有限公司 一种蒸镀机
JP7346329B2 (ja) * 2020-02-28 2023-09-19 株式会社アルバック 材料供給装置
CN112011762B (zh) * 2020-07-28 2023-05-23 云谷(固安)科技有限公司 一种蒸镀装置
JP7242626B2 (ja) * 2020-12-10 2023-03-20 キヤノントッキ株式会社 成膜装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007186787A (ja) 2005-12-14 2007-07-26 Hitachi Displays Ltd 蒸着坩堝並びにこれを備えた薄膜形成装置、及び表示装置の製造方法
JP2012207238A (ja) 2011-03-29 2012-10-25 Hitachi High-Technologies Corp 蒸着方法および蒸着装置
JP2014015637A (ja) * 2012-07-06 2014-01-30 Hitachi High-Technologies Corp 蒸着装置
JP2018003122A (ja) 2016-07-05 2018-01-11 キヤノントッキ株式会社 蒸着装置及び蒸発源

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2967784B2 (ja) * 1989-12-11 1999-10-25 キヤノン株式会社 堆積膜形成方法及びその装置
JP2004214120A (ja) * 2003-01-08 2004-07-29 Sony Corp 有機電界発光素子の製造装置及び製造方法
JP4490160B2 (ja) 2004-05-13 2010-06-23 株式会社アルバック 有機薄膜の成膜装置
JP4728882B2 (ja) * 2006-06-09 2011-07-20 長州産業株式会社 薄膜堆積用分子線源用坩堝の製造方法
JP2009064631A (ja) * 2007-09-05 2009-03-26 Toshiba Matsushita Display Technology Co Ltd 表示装置の製造装置
JP4758513B2 (ja) * 2009-07-31 2011-08-31 富士フイルム株式会社 容器のスクリーニング方法
KR101224773B1 (ko) * 2012-02-23 2013-01-21 박철수 유도가열 방식을 이용한 초고속 진공 증착기
JP6641226B2 (ja) * 2016-04-28 2020-02-05 キヤノントッキ株式会社 真空蒸着装置並びに蒸発源の冷却方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007186787A (ja) 2005-12-14 2007-07-26 Hitachi Displays Ltd 蒸着坩堝並びにこれを備えた薄膜形成装置、及び表示装置の製造方法
JP2012207238A (ja) 2011-03-29 2012-10-25 Hitachi High-Technologies Corp 蒸着方法および蒸着装置
JP2014015637A (ja) * 2012-07-06 2014-01-30 Hitachi High-Technologies Corp 蒸着装置
JP2018003122A (ja) 2016-07-05 2018-01-11 キヤノントッキ株式会社 蒸着装置及び蒸発源

Also Published As

Publication number Publication date
JP2019206733A (ja) 2019-12-05
JP6686069B2 (ja) 2020-04-22
CN110541146B (zh) 2023-08-01
KR20190135901A (ko) 2019-12-09
CN110541146A (zh) 2019-12-06

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