JP6686069B2 - 蒸発源装置、蒸着装置、および蒸着システム - Google Patents

蒸発源装置、蒸着装置、および蒸着システム Download PDF

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Publication number
JP6686069B2
JP6686069B2 JP2018102198A JP2018102198A JP6686069B2 JP 6686069 B2 JP6686069 B2 JP 6686069B2 JP 2018102198 A JP2018102198 A JP 2018102198A JP 2018102198 A JP2018102198 A JP 2018102198A JP 6686069 B2 JP6686069 B2 JP 6686069B2
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Japan
Prior art keywords
container
vapor deposition
cooling
source device
evaporation source
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JP2018102198A
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English (en)
Japanese (ja)
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JP2019206733A (ja
Inventor
由季 菅原
由季 菅原
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Canon Tokki Corp
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Canon Tokki Corp
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Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Priority to JP2018102198A priority Critical patent/JP6686069B2/ja
Priority to KR1020180125114A priority patent/KR102590304B1/ko
Priority to CN201811362781.3A priority patent/CN110541146B/zh
Publication of JP2019206733A publication Critical patent/JP2019206733A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2018102198A 2018-05-29 2018-05-29 蒸発源装置、蒸着装置、および蒸着システム Active JP6686069B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018102198A JP6686069B2 (ja) 2018-05-29 2018-05-29 蒸発源装置、蒸着装置、および蒸着システム
KR1020180125114A KR102590304B1 (ko) 2018-05-29 2018-10-19 증발원 장치, 증착 장치 및 증착 시스템
CN201811362781.3A CN110541146B (zh) 2018-05-29 2018-11-16 蒸发源装置、蒸镀装置及蒸镀系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018102198A JP6686069B2 (ja) 2018-05-29 2018-05-29 蒸発源装置、蒸着装置、および蒸着システム

Publications (2)

Publication Number Publication Date
JP2019206733A JP2019206733A (ja) 2019-12-05
JP6686069B2 true JP6686069B2 (ja) 2020-04-22

Family

ID=68701307

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JP2018102198A Active JP6686069B2 (ja) 2018-05-29 2018-05-29 蒸発源装置、蒸着装置、および蒸着システム

Country Status (3)

Country Link
JP (1) JP6686069B2 (zh)
KR (1) KR102590304B1 (zh)
CN (1) CN110541146B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109321883B (zh) * 2018-10-15 2020-10-27 武汉华星光电半导体显示技术有限公司 一种蒸镀机
JP7346329B2 (ja) * 2020-02-28 2023-09-19 株式会社アルバック 材料供給装置
CN112011762B (zh) * 2020-07-28 2023-05-23 云谷（固安）科技有限公司 一种蒸镀装置
JP7242626B2 (ja) * 2020-12-10 2023-03-20 キヤノントッキ株式会社 成膜装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2967784B2 (ja) * 1989-12-11 1999-10-25 キヤノン株式会社 堆積膜形成方法及びその装置
JP2004214120A (ja) * 2003-01-08 2004-07-29 Sony Corp 有機電界発光素子の製造装置及び製造方法
JP4490160B2 (ja) 2004-05-13 2010-06-23 株式会社アルバック 有機薄膜の成膜装置
JP2007186787A (ja) * 2005-12-14 2007-07-26 Hitachi Displays Ltd 蒸着坩堝並びにこれを備えた薄膜形成装置、及び表示装置の製造方法
JP4728882B2 (ja) * 2006-06-09 2011-07-20 長州産業株式会社 薄膜堆積用分子線源用坩堝の製造方法
JP2009064631A (ja) * 2007-09-05 2009-03-26 Toshiba Matsushita Display Technology Co Ltd 表示装置の製造装置
JP4758513B2 (ja) * 2009-07-31 2011-08-31 富士フイルム株式会社 容器のスクリーニング方法
JP2012207238A (ja) * 2011-03-29 2012-10-25 Hitachi High-Technologies Corp 蒸着方法および蒸着装置
KR101224773B1 (ko) * 2012-02-23 2013-01-21 박철수 유도가열 방식을 이용한 초고속 진공 증착기
JP2014015637A (ja) * 2012-07-06 2014-01-30 Hitachi High-Technologies Corp 蒸着装置
JP6641226B2 (ja) * 2016-04-28 2020-02-05 キヤノントッキ株式会社 真空蒸着装置並びに蒸発源の冷却方法
JP6641242B2 (ja) * 2016-07-05 2020-02-05 キヤノントッキ株式会社 蒸着装置及び蒸発源

Also Published As

Publication number Publication date
JP2019206733A (ja) 2019-12-05
CN110541146A (zh) 2019-12-06
KR20190135901A (ko) 2019-12-09
CN110541146B (zh) 2023-08-01
KR102590304B1 (ko) 2023-10-16

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