KR102497060B1 - 도전성 재료, 성형품 및 전자 부품 - Google Patents

도전성 재료, 성형품 및 전자 부품 Download PDF

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Publication number
KR102497060B1
KR102497060B1 KR1020217010424A KR20217010424A KR102497060B1 KR 102497060 B1 KR102497060 B1 KR 102497060B1 KR 1020217010424 A KR1020217010424 A KR 1020217010424A KR 20217010424 A KR20217010424 A KR 20217010424A KR 102497060 B1 KR102497060 B1 KR 102497060B1
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KR
South Korea
Prior art keywords
conductive material
resin
plating
plating layer
alloy
Prior art date
Application number
KR1020217010424A
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English (en)
Korean (ko)
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KR20210056399A (ko
Inventor
야스노리 사사키
다카히로 가와무라
요시아키 고바야시
아키히로 아이바
Original Assignee
제이엑스금속주식회사
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Publication of KR20210056399A publication Critical patent/KR20210056399A/ko
Application granted granted Critical
Publication of KR102497060B1 publication Critical patent/KR102497060B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/16—Electroplating with layers of varying thickness
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Laminated Bodies (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR1020217010424A 2018-10-18 2019-07-18 도전성 재료, 성형품 및 전자 부품 KR102497060B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018196988A JP6805217B2 (ja) 2018-10-18 2018-10-18 導電性材料、成型品及び電子部品
JPJP-P-2018-196988 2018-10-18
PCT/JP2019/028333 WO2020079905A1 (ja) 2018-10-18 2019-07-18 導電性材料、成型品及び電子部品

Publications (2)

Publication Number Publication Date
KR20210056399A KR20210056399A (ko) 2021-05-18
KR102497060B1 true KR102497060B1 (ko) 2023-02-07

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KR1020217010424A KR102497060B1 (ko) 2018-10-18 2019-07-18 도전성 재료, 성형품 및 전자 부품

Country Status (4)

Country Link
JP (1) JP6805217B2 (zh)
KR (1) KR102497060B1 (zh)
CN (1) CN112805413B (zh)
WO (1) WO2020079905A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102420220B1 (ko) * 2020-05-29 2022-07-13 주식회사 포스코 연료전지 분리판용 스테인리스강

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3228789B2 (ja) 1992-07-11 2001-11-12 新光電気工業株式会社 樹脂用インサート部材の製造方法
JPH09148508A (ja) * 1995-11-29 1997-06-06 Nippon Denkai Kk 半導体装置用リードフレーム及びこれを用いた樹脂封止型半導体装置
JPH1027873A (ja) 1996-07-11 1998-01-27 Nippon Koujiyundo Kagaku Kk 半導体装置用リードフレーム
JPH10265991A (ja) * 1997-03-24 1998-10-06 Nikko Kinzoku Kk 樹脂密着性に優れためっき材
JP3916586B2 (ja) * 2003-05-16 2007-05-16 株式会社三井ハイテック リードフレームのめっき方法
JP2006093559A (ja) 2004-09-27 2006-04-06 Sumitomo Metal Mining Package Materials Co Ltd リードフレームおよびその製造方法
JP5400447B2 (ja) * 2009-03-31 2014-01-29 三井金属鉱業株式会社 粗化処理銅箔、粗化処理銅箔の製造方法及び銅張積層板
JP5614538B2 (ja) * 2010-09-30 2014-10-29 アイテック株式会社 複合めっき被膜の形成方法
JP5555146B2 (ja) * 2010-12-01 2014-07-23 株式会社日立製作所 金属樹脂複合構造体及びその製造方法、並びにバスバ、モジュールケース及び樹脂製コネクタ部品
JP2013111881A (ja) * 2011-11-29 2013-06-10 Polyplastics Co 金属部品の製造方法、及び複合成形体
JP6171275B2 (ja) * 2012-07-02 2017-08-02 大日本印刷株式会社 透明フィルム及びその製造方法
US20150279824A1 (en) * 2014-03-28 2015-10-01 Vijay K. Nair Electronic package and method of forming an electronic package
JP5927637B1 (ja) * 2015-06-19 2016-06-01 Hoya株式会社 プレス成形用ガラス素材、プレス成形用ガラス素材の製造方法、及び光学素子の製造方法
WO2016208509A1 (ja) * 2015-06-25 2016-12-29 コニカミノルタ株式会社 成形型、光学素子、及び光学素子の製造方法
KR102490491B1 (ko) * 2015-07-29 2023-01-19 나믹스 코포레이션 조면화 처리 구리박, 동장 적층판 및 프린트 배선판
KR102503365B1 (ko) * 2015-09-01 2023-02-24 후루카와 덴키 고교 가부시키가이샤 내열성이 우수한 도금재 및 그 제조방법
JP2017055044A (ja) * 2015-09-11 2017-03-16 古河電気工業株式会社 リードフレーム
JP6789965B2 (ja) * 2015-11-05 2020-11-25 古河電気工業株式会社 リードフレーム材およびその製造方法
JPWO2017179447A1 (ja) 2016-04-12 2018-04-19 古河電気工業株式会社 リードフレーム材およびその製造方法
CN110114515A (zh) * 2016-12-27 2019-08-09 古河电气工业株式会社 表面处理材料及使用该表面处理材料制作的零件
KR102482396B1 (ko) * 2016-12-27 2022-12-28 후루카와 덴끼고교 가부시키가이샤 리드 프레임재 및 이의 제조 방법 및 반도체 패키지

Also Published As

Publication number Publication date
KR20210056399A (ko) 2021-05-18
CN112805413A (zh) 2021-05-14
JP2020063493A (ja) 2020-04-23
CN112805413B (zh) 2024-01-12
WO2020079905A1 (ja) 2020-04-23
JP6805217B2 (ja) 2020-12-23

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