KR102496905B1 - 평면 연마 장치 및 캐리어 - Google Patents
평면 연마 장치 및 캐리어 Download PDFInfo
- Publication number
- KR102496905B1 KR102496905B1 KR1020170023261A KR20170023261A KR102496905B1 KR 102496905 B1 KR102496905 B1 KR 102496905B1 KR 1020170023261 A KR1020170023261 A KR 1020170023261A KR 20170023261 A KR20170023261 A KR 20170023261A KR 102496905 B1 KR102496905 B1 KR 102496905B1
- Authority
- KR
- South Korea
- Prior art keywords
- carrier
- thickness
- measuring
- work
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 96
- 238000002834 transmittance Methods 0.000 claims description 28
- 230000005540 biological transmission Effects 0.000 abstract description 16
- 238000005259 measurement Methods 0.000 description 51
- 239000000523 sample Substances 0.000 description 37
- 239000000463 material Substances 0.000 description 14
- 239000000969 carrier Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 6
- 229920003002 synthetic resin Polymers 0.000 description 5
- 239000000057 synthetic resin Substances 0.000 description 5
- 238000007726 management method Methods 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- -1 stainless steel Chemical class 0.000 description 3
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 239000011151 fibre-reinforced plastic Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2016-044113 | 2016-03-08 | ||
| JP2016044113A JP6622117B2 (ja) | 2016-03-08 | 2016-03-08 | 平面研磨装置及びキャリア |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170104925A KR20170104925A (ko) | 2017-09-18 |
| KR102496905B1 true KR102496905B1 (ko) | 2023-02-07 |
Family
ID=59848707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170023261A Active KR102496905B1 (ko) | 2016-03-08 | 2017-02-22 | 평면 연마 장치 및 캐리어 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6622117B2 (enExample) |
| KR (1) | KR102496905B1 (enExample) |
| CN (1) | CN107160288B (enExample) |
| TW (1) | TWI709457B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6760638B2 (ja) * | 2016-04-14 | 2020-09-23 | スピードファム株式会社 | 平面研磨装置 |
| CN107486786A (zh) * | 2017-10-01 | 2017-12-19 | 德清凯晶光电科技有限公司 | 防塌边游星轮 |
| JP7035748B2 (ja) * | 2018-04-11 | 2022-03-15 | 株式会社Sumco | ワークの両面研磨装置 |
| JP7046358B2 (ja) * | 2018-04-17 | 2022-04-04 | スピードファム株式会社 | 研磨装置 |
| JP7364217B2 (ja) * | 2019-11-05 | 2023-10-18 | スピードファム株式会社 | 研磨装置 |
| JP7651151B2 (ja) * | 2019-12-25 | 2025-03-26 | スピードファム株式会社 | ワークホール検出装置及びワークホール検出方法 |
| JP7435113B2 (ja) * | 2020-03-23 | 2024-02-21 | 株式会社Sumco | ワークの両面研磨装置 |
| JP7425411B2 (ja) | 2020-10-12 | 2024-01-31 | 株式会社Sumco | キャリア測定装置、キャリア測定方法、及びキャリア管理方法 |
| CN117506703B (zh) * | 2023-12-01 | 2024-05-10 | 苏州博宏源机械制造有限公司 | 测量装置及抛光系统 |
| TWI880618B (zh) * | 2024-01-31 | 2025-04-11 | 準力機械股份有限公司 | 基板研磨設備的研磨構造 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227393A (ja) | 2007-03-15 | 2008-09-25 | Fujikoshi Mach Corp | ウェーハの両面研磨装置 |
| JP2010045279A (ja) | 2008-08-18 | 2010-02-25 | Nippon Steel Corp | 半導体基板の両面研磨方法 |
| JP2015047656A (ja) | 2013-08-30 | 2015-03-16 | 株式会社Sumco | ワークの両面研磨装置及び両面研磨方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61213611A (ja) * | 1985-03-19 | 1986-09-22 | Nec Corp | 結晶の研磨方法 |
| JPH05309559A (ja) * | 1992-05-12 | 1993-11-22 | Speedfam Co Ltd | 平面研磨方法及び装置 |
| JPH0740233A (ja) * | 1993-07-27 | 1995-02-10 | Speedfam Co Ltd | ワークの厚さ測定装置 |
| JP3326443B2 (ja) * | 1993-08-10 | 2002-09-24 | 株式会社ニコン | ウエハ研磨方法及びその装置 |
| DE69632490T2 (de) * | 1995-03-28 | 2005-05-12 | Applied Materials, Inc., Santa Clara | Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen |
| JP2888339B1 (ja) * | 1998-03-27 | 1999-05-10 | 直江津電子工業株式会社 | 被加工物保持プレート |
| KR101587226B1 (ko) * | 2008-07-31 | 2016-01-20 | 신에쯔 한도타이 가부시키가이샤 | 웨이퍼의 연마 방법 및 양면 연마 장치 |
| CN201419354Y (zh) * | 2009-04-29 | 2010-03-10 | 上海合晶硅材料有限公司 | 一种用于加工薄型硅单晶片的行星片 |
| JP2012205258A (ja) * | 2011-03-28 | 2012-10-22 | Seiko Instruments Inc | 研磨方法、圧電振動片の製造方法、圧電振動子、発振器、電子機器及び電波時計 |
| JP5630414B2 (ja) * | 2011-10-04 | 2014-11-26 | 信越半導体株式会社 | ウェーハの加工方法 |
| JP5896884B2 (ja) * | 2012-11-13 | 2016-03-30 | 信越半導体株式会社 | 両面研磨方法 |
| JP6003800B2 (ja) * | 2013-05-16 | 2016-10-05 | 信越半導体株式会社 | ウェーハの両面研磨方法及び両面研磨システム |
| KR20150053049A (ko) * | 2013-11-07 | 2015-05-15 | 주식회사 엘지실트론 | 웨이퍼의 양면 연마 방법 |
| JP6255991B2 (ja) * | 2013-12-26 | 2018-01-10 | 株式会社Sumco | ワークの両面研磨装置 |
-
2016
- 2016-03-08 JP JP2016044113A patent/JP6622117B2/ja active Active
-
2017
- 2017-02-22 KR KR1020170023261A patent/KR102496905B1/ko active Active
- 2017-03-06 CN CN201710129352.0A patent/CN107160288B/zh active Active
- 2017-03-07 TW TW106107403A patent/TWI709457B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227393A (ja) | 2007-03-15 | 2008-09-25 | Fujikoshi Mach Corp | ウェーハの両面研磨装置 |
| JP2010045279A (ja) | 2008-08-18 | 2010-02-25 | Nippon Steel Corp | 半導体基板の両面研磨方法 |
| JP2015047656A (ja) | 2013-08-30 | 2015-03-16 | 株式会社Sumco | ワークの両面研磨装置及び両面研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017159382A (ja) | 2017-09-14 |
| CN107160288A (zh) | 2017-09-15 |
| CN107160288B (zh) | 2020-06-26 |
| TW201731633A (zh) | 2017-09-16 |
| JP6622117B2 (ja) | 2019-12-18 |
| KR20170104925A (ko) | 2017-09-18 |
| TWI709457B (zh) | 2020-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102496905B1 (ko) | 평면 연마 장치 및 캐리어 | |
| KR102315142B1 (ko) | 평면 연마 장치 | |
| JP6146213B2 (ja) | ワークの両面研磨装置及び両面研磨方法 | |
| TWI752045B (zh) | 研磨裝置 | |
| KR101962479B1 (ko) | 연마 장치의 계측용 창 구조 | |
| KR101527961B1 (ko) | 광파이버 연마장치 | |
| JP6650341B2 (ja) | 断面形状測定方法 | |
| JP2014172131A (ja) | 研削装置 | |
| TW201511884A (zh) | 晶圓的雙面硏磨方法及雙面硏磨系統 | |
| US10920338B1 (en) | Driving unit measuring apparatus and silicon crystal growing apparatus having same | |
| KR101499315B1 (ko) | 연마 두께 조절 기능을 갖는 시편 연마 장치 | |
| JP6594124B2 (ja) | ウェーハ研磨装置 | |
| KR20160120237A (ko) | 박판형상 워크의 제조방법 및 양두 평면 연삭장치 | |
| JP2012240177A (ja) | 研削加工装置及び方法 | |
| JP2006231470A (ja) | 両面ポリッシュ加工機の定寸方法及び定寸装置 | |
| JP6905362B2 (ja) | 研磨装置 | |
| WO2018043054A1 (ja) | ドレッサー | |
| KR102511111B1 (ko) | 디레이어링용 폴리싱 장치 | |
| KR101537074B1 (ko) | 복수의 가공부를 구비한 베어링 가공장치 | |
| JP2016179513A (ja) | 研磨パッドの調整方法 | |
| JP2006237098A (ja) | 半導体ウェーハの両面研磨装置及び両面研磨方法 | |
| KR102893464B1 (ko) | 연마 종점 검출 장치 및 cmp장치 | |
| JP5984253B2 (ja) | 研磨機用定盤の表面加工方法および研磨機用定盤 | |
| KR101285897B1 (ko) | 웨이퍼 연마장치 및 웨이퍼를 연마하는 방법 | |
| TWI619580B (zh) | 平面研磨機及其研磨方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20170222 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20211116 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20170222 Comment text: Patent Application |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20230117 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20230202 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20230203 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |