TWI709457B - 平面研磨裝置及載具 - Google Patents

平面研磨裝置及載具 Download PDF

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Publication number
TWI709457B
TWI709457B TW106107403A TW106107403A TWI709457B TW I709457 B TWI709457 B TW I709457B TW 106107403 A TW106107403 A TW 106107403A TW 106107403 A TW106107403 A TW 106107403A TW I709457 B TWI709457 B TW I709457B
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TW
Taiwan
Prior art keywords
carrier
thickness
workpiece
light
measuring
Prior art date
Application number
TW106107403A
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English (en)
Chinese (zh)
Other versions
TW201731633A (zh
Inventor
井上裕介
吉原秀明
Original Assignee
日商快遞股份有限公司
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Application filed by 日商快遞股份有限公司 filed Critical 日商快遞股份有限公司
Publication of TW201731633A publication Critical patent/TW201731633A/zh
Application granted granted Critical
Publication of TWI709457B publication Critical patent/TWI709457B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW106107403A 2016-03-08 2017-03-07 平面研磨裝置及載具 TWI709457B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016044113A JP6622117B2 (ja) 2016-03-08 2016-03-08 平面研磨装置及びキャリア
JP2016-044113 2016-03-08

Publications (2)

Publication Number Publication Date
TW201731633A TW201731633A (zh) 2017-09-16
TWI709457B true TWI709457B (zh) 2020-11-11

Family

ID=59848707

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106107403A TWI709457B (zh) 2016-03-08 2017-03-07 平面研磨裝置及載具

Country Status (4)

Country Link
JP (1) JP6622117B2 (enExample)
KR (1) KR102496905B1 (enExample)
CN (1) CN107160288B (enExample)
TW (1) TWI709457B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6760638B2 (ja) * 2016-04-14 2020-09-23 スピードファム株式会社 平面研磨装置
CN107486786A (zh) * 2017-10-01 2017-12-19 德清凯晶光电科技有限公司 防塌边游星轮
JP7035748B2 (ja) * 2018-04-11 2022-03-15 株式会社Sumco ワークの両面研磨装置
JP7046358B2 (ja) * 2018-04-17 2022-04-04 スピードファム株式会社 研磨装置
JP7364217B2 (ja) * 2019-11-05 2023-10-18 スピードファム株式会社 研磨装置
JP7651151B2 (ja) * 2019-12-25 2025-03-26 スピードファム株式会社 ワークホール検出装置及びワークホール検出方法
JP7435113B2 (ja) * 2020-03-23 2024-02-21 株式会社Sumco ワークの両面研磨装置
JP7425411B2 (ja) * 2020-10-12 2024-01-31 株式会社Sumco キャリア測定装置、キャリア測定方法、及びキャリア管理方法
CN117506703B (zh) * 2023-12-01 2024-05-10 苏州博宏源机械制造有限公司 测量装置及抛光系统
TWI880618B (zh) * 2024-01-31 2025-04-11 準力機械股份有限公司 基板研磨設備的研磨構造

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021109A (en) * 2008-07-31 2010-06-01 Shinetsu Handotai Kk Wafer polishing method and double side polishing apparatus
EP1970163B1 (en) * 2007-03-15 2010-09-22 Fujikoshi Machinery Corporation Double-side polishing apparatus
TW201304404A (zh) * 2011-03-28 2013-01-16 Seiko Instr Inc 研磨方法、壓電振動片之製造方法、壓電振動子、振盪器、電子機器及電波時鐘
WO2013051184A1 (ja) * 2011-10-04 2013-04-11 信越半導体株式会社 ウェーハの加工方法
TW201436012A (zh) * 2012-11-13 2014-09-16 Shinetsu Handotai Kk 雙面研磨方法
WO2014185008A1 (ja) * 2013-05-16 2014-11-20 信越半導体株式会社 ウェーハの両面研磨方法及び両面研磨システム
TW201515768A (zh) * 2013-08-30 2015-05-01 Sumco Corp 工件之兩面硏磨裝置及兩面硏磨方法
TW201536473A (zh) * 2013-12-26 2015-10-01 Sumco Corp 工件之兩面硏磨裝置

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JPS61213611A (ja) * 1985-03-19 1986-09-22 Nec Corp 結晶の研磨方法
JPH05309559A (ja) * 1992-05-12 1993-11-22 Speedfam Co Ltd 平面研磨方法及び装置
JPH0740233A (ja) * 1993-07-27 1995-02-10 Speedfam Co Ltd ワークの厚さ測定装置
JP3326443B2 (ja) * 1993-08-10 2002-09-24 株式会社ニコン ウエハ研磨方法及びその装置
DE69632490T2 (de) * 1995-03-28 2005-05-12 Applied Materials, Inc., Santa Clara Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
JP2888339B1 (ja) * 1998-03-27 1999-05-10 直江津電子工業株式会社 被加工物保持プレート
JP2010045279A (ja) * 2008-08-18 2010-02-25 Nippon Steel Corp 半導体基板の両面研磨方法
CN201419354Y (zh) * 2009-04-29 2010-03-10 上海合晶硅材料有限公司 一种用于加工薄型硅单晶片的行星片
KR20150053049A (ko) * 2013-11-07 2015-05-15 주식회사 엘지실트론 웨이퍼의 양면 연마 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1970163B1 (en) * 2007-03-15 2010-09-22 Fujikoshi Machinery Corporation Double-side polishing apparatus
TW201021109A (en) * 2008-07-31 2010-06-01 Shinetsu Handotai Kk Wafer polishing method and double side polishing apparatus
TW201304404A (zh) * 2011-03-28 2013-01-16 Seiko Instr Inc 研磨方法、壓電振動片之製造方法、壓電振動子、振盪器、電子機器及電波時鐘
WO2013051184A1 (ja) * 2011-10-04 2013-04-11 信越半導体株式会社 ウェーハの加工方法
TW201436012A (zh) * 2012-11-13 2014-09-16 Shinetsu Handotai Kk 雙面研磨方法
WO2014185008A1 (ja) * 2013-05-16 2014-11-20 信越半導体株式会社 ウェーハの両面研磨方法及び両面研磨システム
TW201515768A (zh) * 2013-08-30 2015-05-01 Sumco Corp 工件之兩面硏磨裝置及兩面硏磨方法
TW201536473A (zh) * 2013-12-26 2015-10-01 Sumco Corp 工件之兩面硏磨裝置

Also Published As

Publication number Publication date
KR20170104925A (ko) 2017-09-18
JP6622117B2 (ja) 2019-12-18
JP2017159382A (ja) 2017-09-14
CN107160288A (zh) 2017-09-15
TW201731633A (zh) 2017-09-16
CN107160288B (zh) 2020-06-26
KR102496905B1 (ko) 2023-02-07

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