TWI709457B - Surface polishing apparatus and carrier - Google Patents

Surface polishing apparatus and carrier Download PDF

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Publication number
TWI709457B
TWI709457B TW106107403A TW106107403A TWI709457B TW I709457 B TWI709457 B TW I709457B TW 106107403 A TW106107403 A TW 106107403A TW 106107403 A TW106107403 A TW 106107403A TW I709457 B TWI709457 B TW I709457B
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carrier
thickness
workpiece
light
measuring
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TW106107403A
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TW201731633A (en
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井上裕介
吉原秀明
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日商快遞股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/28Work carriers for double side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/24Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

即使是載具為不具有光透過性之載具的情 況,亦可藉由雷射光來測量該載具的厚度,且省去在前述載具的厚度測量之際將該載具從研磨裝置拆卸的麻煩,使工件之厚度與載具之厚度的間隙管理變得容易,並刪減其作業步驟。 Even if the vehicle is a vehicle that does not transmit light In addition, the thickness of the carrier can also be measured by laser light, and the trouble of removing the carrier from the grinding device during the thickness measurement of the carrier is eliminated, and the gap between the thickness of the workpiece and the thickness of the carrier is eliminated. Management becomes easier, and the operation steps are deleted.

一種用來研磨被保持在載具(30)之工 件(40)的平面研磨裝置(1),具有測量該工件(40)及載具(30)之厚度的厚度測量裝置(X),前述厚度測量裝置(X),係構成為將雷射光照向前述工件(40)及前述載具(30),且根據來自表背面的反射光來測量厚度,前述載具(30),係具有:具有用來保持前述工件(40)之工件保持孔(32)的本體部(31)、以及具備測量孔(34)及嵌入至該測量孔(34)之透光構件(35)的厚度測量部(Y)。 A tool used to grind the carrier (30) The surface grinding device (1) of the piece (40) has a thickness measuring device (X) for measuring the thickness of the workpiece (40) and the carrier (30). The aforementioned thickness measuring device (X) is configured to illuminate the laser To the workpiece (40) and the carrier (30), and measure the thickness based on the reflected light from the front and back. The carrier (30) has: a workpiece holding hole (40) for holding the workpiece (40) The main body part (31) of 32) and the thickness measuring part (Y) provided with a measuring hole (34) and a light-transmitting member (35) embedded in the measuring hole (34).

Description

平面研磨裝置及載具 Plane grinding device and carrier

本發明,係關於用來研磨半導體晶圓等之工件之表背面的平面研磨裝置、以及用來保持前述工件的載具。 The present invention relates to a plane polishing device for polishing the front and back surfaces of a workpiece such as a semiconductor wafer, and a carrier for holding the aforementioned workpiece.

用來研磨半導體晶圓或玻璃基板等之板狀工件的平面研磨裝置,一般係構成為:具有配置成旋轉自如的上定盤及下定盤、以及保持前述工件的載具,將被該載具所保持的前述工件以上定盤及下定盤來夾持,且藉由前述上定盤與下定盤來研磨該工件的表背面。 A flat surface polishing device used to polish plate-shaped workpieces such as semiconductor wafers or glass substrates is generally configured to have an upper and lower platen that are rotatably arranged, and a carrier that holds the aforementioned workpiece. The held work piece is clamped by the upper and lower platens, and the front and back sides of the work are polished by the upper and lower plates.

此種平面研磨裝置,已知係藉由在工件的厚度與載具的厚度之差成為既定值的時間點結束研磨,來得到具有高平面度的工件。因此,以往係如專利文獻1所揭示般,分別測量工件的厚度與載具的厚度,管理該工件的厚度與載具的厚度之差(間隙),而進行研磨加工直到該間隙成為既定值為止。 Such a flat polishing device is known to obtain a high flatness workpiece by terminating the polishing when the difference between the thickness of the workpiece and the thickness of the carrier becomes a predetermined value. Therefore, in the past, as disclosed in Patent Document 1, the thickness of the workpiece and the thickness of the carrier were measured separately, the difference between the thickness of the workpiece and the thickness of the carrier (gap) was managed, and the grinding process was performed until the gap became a predetermined value. .

但是,專利文獻1所揭示者,係在研磨開始 前測量載具的厚度,且在非研磨時(研磨砥粒的切換時機)來測量工件的厚度,故有著作業效率不佳的缺點。 However, as disclosed in Patent Document 1, it is at the beginning of polishing The thickness of the carrier is measured before, and the thickness of the workpiece is measured when it is not grinding (the timing of switching the grinding stone), so it has the disadvantage of poor work efficiency.

另一方面,於專利文獻2揭示有:於支撐框架安裝有雷射光的厚度測量裝置,由該厚度測量裝置對工件照射雷射光,並根據由該工件表面及背面所反射的反射光來算出該工件的厚度。根據此,可在研磨中測量工件的厚度,故作業效率優異。至於載具,由於來自該載具的反射光較弱,故會將該反射光作為測量異常,於是沒有用雷射光進行厚度測量。 On the other hand, Patent Document 2 discloses a thickness measuring device in which a laser beam is mounted on a support frame. The thickness measuring device irradiates a workpiece with the laser beam, and calculates the thickness based on the reflected light reflected from the surface and back of the workpiece. The thickness of the workpiece. According to this, the thickness of the workpiece can be measured during polishing, so the work efficiency is excellent. As for the carrier, since the reflected light from the carrier is weak, the reflected light will be regarded as a measurement anomaly, so no laser light is used for thickness measurement.

由於平面研磨加工所使用的載具係被反覆使用,故必須要有耐久性,於是一般來說使用耐久性優異的載具。其中,又以金屬或纖維強化塑膠等所成之不具有光透過性(透光性)的載具或光透過性(透光性)較低且反射光較弱的載具(以下稱為「不具有光透過性(透光性)的載具」)的反射光,其強度較弱故由反射光所得到的測量資料的峰值會被因研磨加工時之研磨裝置的振動等所產生的雜訊給蓋過,故會被當成雜訊來處理(成為測量異常)。特別是金屬製載具的情況,由於雷射光不會穿透,故無法以該雷射光進行厚度測量。因此,在使用金屬製載具來研磨工件的情況,必須在非研磨時特地將該載具從研磨裝置取出並使用測微器等的測量器具來測量厚度,作業效率差。 Since the carrier used in the surface grinding process is repeatedly used, it must be durable, so in general, a carrier with excellent durability is used. Among them, a carrier made of metal or fiber-reinforced plastic that does not have light transmission (transmittance) or a carrier with low light transmission (transmission) and weak reflected light (hereinafter referred to as " The reflected light of a carrier that does not have light transmittance (transparent)") has weak intensity, so the peak value of the measurement data obtained from the reflected light will be affected by the vibration of the polishing device during the polishing process. If the information is overwritten, it will be treated as noise (it becomes a measurement anomaly). Especially in the case of metal carriers, since the laser light does not penetrate, the thickness measurement cannot be performed with the laser light. Therefore, when a metal carrier is used to polish a workpiece, the carrier must be taken out of the polishing device during non-polishing and the thickness must be measured using a measuring instrument such as a micrometer, which results in poor work efficiency.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2010-45279號公報 [Patent Document 1] JP 2010-45279 A

[專利文獻2]日本特開2008-227393號公報 [Patent Document 2] JP 2008-227393 A

於是,本發明的技術性課題,係即使當載具為上述不具有光透過性(透光性)之載具的情況,亦可藉由雷射光來測量該載具的厚度,沒有必要在測量該載具的厚度之際將該載具從研磨裝置拆除,可有效率地進行間隙管理所致之工件的研磨。 Therefore, the technical problem of the present invention is that even when the carrier is the above-mentioned non-transparent (transparent) carrier, the thickness of the carrier can be measured by laser light, and there is no need to measure When the thickness of the carrier is to be removed from the polishing device, the workpiece can be polished efficiently due to gap management.

為了達成上述目的,根據本發明,提供一種平面研磨裝置,係具有配置成旋轉自如的上定盤及下定盤、以及用來保持工件的載具,將被保持於該載具的工件以前述上定盤及下定盤來夾持並研磨該工件的兩面,其特徵為,前述平面研磨裝置,具有用來測量前述工件及載具之厚度的厚度測量裝置,前述厚度測量裝置,係構成為將雷射光照向前述工件及載具,且根據來自該工件及載具之表面的反射光與來自背面的反射光來測量該工件及載具的厚度,前述載具,係具有:具有用來保持前述工件之工件保持孔的本體部、以及用來測量該載具之厚度的厚度測量 部,該厚度測量部,係具有形成在與前述工件保持孔不同位置的測量孔、以及嵌入至該測量孔的透光構件,該透光構件的光透過性(透光性)係比前述本體部還優異,且,該透光構件的厚度係與前述本體部的厚度相等,且,該透光構件的表背面係與前述本體部的表背面位在相同平面。 In order to achieve the above-mentioned object, according to the present invention, there is provided a surface grinding device, which has an upper and lower platen that are rotatably arranged, and a carrier for holding a workpiece, and the workpiece held on the carrier is The fixed plate and the lower fixed plate are used to clamp and grind both sides of the workpiece. The characteristic is that the flat surface grinding device has a thickness measuring device for measuring the thickness of the workpiece and the carrier, and the thickness measuring device is configured to The light is directed to the workpiece and the carrier, and the thickness of the workpiece and the carrier is measured based on the reflected light from the surface of the workpiece and the carrier and the reflected light from the back. The carrier has: The body part of the workpiece holding hole of the workpiece, and the thickness measurement used to measure the thickness of the carrier The thickness measuring part has a measuring hole formed at a position different from the aforementioned workpiece holding hole, and a light-transmitting member inserted into the measuring hole, and the light-transmitting member has a higher light transmittance (translucent) than the aforementioned body The part is also excellent, and the thickness of the light-transmitting member is equal to the thickness of the body part, and the front and back of the light-transmitting member are on the same plane as the front and back of the body.

關於本發明的平面研磨裝置,其較佳為,前述測量孔的口徑,比前述工件保持孔的口徑還小。且,前述透光構件的研磨速率,係與前述本體部的研磨速率同等或在其之下較佳。 Regarding the surface polishing device of the present invention, it is preferable that the diameter of the measuring hole is smaller than the diameter of the workpiece holding hole. Moreover, the polishing rate of the light-transmitting member is preferably equal to or lower than the polishing rate of the main body.

且,根據本發明,提供一種載具,其配置在平面研磨裝置的上定盤與下定盤之間,用來保持被該上定盤與下定盤研磨的工件,其特徵為,前述載具,係具有:具有用來保持前述工件之工件保持孔的本體部、以及用來以雷射光測量該載具之厚度的厚度測量部,該厚度測量部,係具有形成在與前述工件保持孔不同位置的測量孔、以及嵌入至該測量孔的透光構件,該透光構件的光透過性(透光性)係比前述本體部還優異,且,該透光構件的厚度係與前述本體部的厚度相等,且,該透光構件的表背面係與前述本體部的表背面位在相同平面。 Furthermore, according to the present invention, there is provided a carrier, which is arranged between the upper and lower plates of the planar grinding device, and is used to hold the workpieces ground by the upper and lower plates, characterized in that the aforementioned carrier, It is provided with a body part having a workpiece holding hole for holding the aforementioned workpiece, and a thickness measuring part for measuring the thickness of the carrier with laser light. The thickness measuring part is formed at a position different from the aforementioned workpiece holding hole The measuring hole of the measuring hole and the light-transmitting member embedded in the measuring hole, the light-transmitting member (translucent) is better than the aforementioned body, and the thickness of the light-transmitting member is the same as the thickness of the aforementioned body The thickness is equal, and the front and back of the light-transmitting member are on the same plane as the front and back of the aforementioned main body.

關於本發明的載具,其較佳為,前述測量孔的口徑,比前述工件保持孔的口徑還小。且,前述透光構件的研磨速率,係與前述本體部的研磨速率同等或在其之下較佳。 Regarding the carrier of the present invention, it is preferable that the diameter of the measuring hole is smaller than the diameter of the workpiece holding hole. Moreover, the polishing rate of the light-transmitting member is preferably equal to or lower than the polishing rate of the main body.

如上述般,根據本發明,即使載具為不具有光透過性(透光性)或光透過性(透光性)較低的材料,亦可藉由雷射光測量該載具的厚度,且,在測量載具的厚度之際,沒有必要特地將該載具從研磨裝置拆除,故工件厚度與載具厚度的間隙管理成為容易,能夠刪減作業工數。且,可防止因載具的拆除、再裝填所致之載具的變形或破損,故可防止由該變形或破損使上下定盤對研磨面的接觸成為不均勻而使研磨面的狀態成為不安定導致工件之加工精度偏差的發生,可實現穩定的研磨加工。 As described above, according to the present invention, even if the carrier is a material with no light transmittance (transmittance) or low light transmittance (transparency), the thickness of the carrier can be measured by laser light, and When measuring the thickness of the carrier, there is no need to specifically remove the carrier from the polishing device, so the gap management between the thickness of the workpiece and the thickness of the carrier becomes easy, and the number of work can be reduced. In addition, it can prevent the deformation or damage of the carrier caused by the removal and reloading of the carrier, so it can prevent the deformation or damage from making the contact between the upper and lower table and the polishing surface become uneven and the state of the polishing surface becomes uneven. Stability leads to deviations in the machining accuracy of the workpiece, and stable grinding can be achieved.

1:平面研磨裝置 1: Plane grinding device

2:上定盤 2: Upper fixing

3:下定盤 3: next fix

30:載具 30: Vehicle

31:本體部 31: body part

32:工件保持孔 32: Workpiece holding hole

34:測量孔 34: Measuring hole

35:透光構件 35: light transmitting member

40:工件 40: Workpiece

50:第2探頭 50: 2nd probe

X:厚度測量裝置 X: Thickness measuring device

Y:厚度測量部 Y: Thickness measurement department

圖1為表示關於本發明之平面研磨裝置之一實施形態之整體構造的概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing the overall structure of an embodiment of a flat surface polishing apparatus related to the present invention.

圖2為表示在上定盤與下定盤上所配置之複數個載具的概略俯視圖。 Fig. 2 is a schematic plan view showing a plurality of carriers arranged on the upper plate and the lower plate.

圖3為表示測量工件厚度之狀態的概略部分擴大圖。 Fig. 3 is a schematic enlarged view showing the state of measuring the thickness of the workpiece.

圖4為表示本實施形態之載具之第一例的概略俯視圖。 Fig. 4 is a schematic plan view showing the first example of the carrier of the present embodiment.

圖5為表示前述載具之第二例的概略俯視圖。 Fig. 5 is a schematic plan view showing a second example of the aforementioned carrier.

圖6為表示前述載具之第三例的概略俯視圖。 Fig. 6 is a schematic plan view showing a third example of the aforementioned carrier.

圖7為表示前述載具之第四例的概略俯視圖。 Fig. 7 is a schematic plan view showing a fourth example of the aforementioned carrier.

圖8為表示測量載具厚度之狀態的概略部分擴大圖。 Fig. 8 is an enlarged view of a schematic part showing the state of measuring the thickness of the carrier.

以下,針對關於本發明之平面研磨裝置的一實施形態,使用圖式進行詳細說明。關於本實施形態的平面研磨裝置1,係用來研磨如矽晶圓或玻璃基板般具有光透過性(透光性)之板狀工件40的表背面者,如圖1所示般,於該平面研磨裝置1的機體具有以軸線L為中心旋轉自如地配設的上定盤2及下定盤3與太陽齒輪4及內齒輪5,並在前述下定盤3上具有以等間隔載置且咬合於前述太陽齒輪4及內齒輪5的金屬製載具30。於該載具30,形成有用來保持前述工件40的工件保持孔32。 Hereinafter, an embodiment of the surface polishing apparatus of the present invention will be described in detail using drawings. Regarding the surface polishing device 1 of this embodiment, it is used to polish the front and back surfaces of a plate-shaped workpiece 40 having light permeability (translucent) like a silicon wafer or a glass substrate, as shown in FIG. The body of the surface grinding device 1 has an upper fixed plate 2 and a lower fixed plate 3, a sun gear 4 and an internal gear 5 rotatably arranged around an axis L, and the lower fixed plate 3 is mounted at equal intervals and engaged The metal carrier 30 on the aforementioned sun gear 4 and internal gear 5. In the carrier 30, a workpiece holding hole 32 for holding the aforementioned workpiece 40 is formed.

且,前述平面研磨裝置1,係具備第1~第4驅動軸2a~5a,其以前述軸線L為中心配設成同軸狀且下端與驅動馬達等的驅動源連接,於第1驅動軸2a的上端安裝有驅動器10,第2驅動軸3a的上端係與前述下定盤3連接,第3驅動軸4a的上端係與前述太陽齒輪4連接,第4驅動軸5a的上端係與前述內齒輪5連接,藉由該等驅動軸2a~5a使前述上定盤2及下定盤3、太陽齒輪4及內齒輪5,以前述軸線L為中心驅動、旋轉。又,前述第1驅動軸2a所致之上定盤2的驅動,係由以下的說明而明瞭。 In addition, the surface polishing device 1 includes first to fourth drive shafts 2a to 5a, which are arranged coaxially with the axis L as the center, and the lower end is connected to a drive source such as a drive motor, and is connected to the first drive shaft 2a A driver 10 is mounted on the upper end of the second drive shaft 3a, the upper end of the second drive shaft 3a is connected to the aforementioned bottom plate 3, the upper end of the third drive shaft 4a is connected to the aforementioned sun gear 4, and the upper end of the fourth drive shaft 5a is connected to the aforementioned internal gear 5. In connection, the upper surface plate 2 and the lower surface plate 3, the sun gear 4, and the internal gear 5 are driven and rotated by the drive shafts 2a to 5a with the axis L as the center. In addition, the driving of the upper surface plate 2 by the aforementioned first driving shaft 2a is made clear from the following description.

於前述上定盤2的上方,設有與前述機體成為一體的支撐框架6,於該支撐框架6,安裝有馬達或氣缸等之昇降用致動器7,於該昇降用致動器7之昇降桿7a 的下端,連結有定盤懸吊件8,於該定盤懸吊件8使前述上定盤2被複數個支承螺柱8a所支撐。在前述定盤懸吊件8的內周、與前述昇降桿7a的外周之間,設有軸承12,藉由該軸承12,使前述昇降桿7a與定盤懸吊件8連結成在上下方向互相固定,但以前述軸線L為中心於旋轉方向相對地旋轉自如。 Above the upper fixed plate 2, a support frame 6 integrated with the machine body is provided. On the support frame 6, a lifting actuator 7 such as a motor or an air cylinder is mounted, and the lifting actuator 7 Lifting rod 7a A fixed plate suspension 8 is connected to the lower end of the plate, and the upper fixed plate 2 is supported by a plurality of support studs 8a in the fixed plate suspension 8. Between the inner circumference of the fixed plate suspension 8 and the outer circumference of the lifting rod 7a, a bearing 12 is provided. With the bearing 12, the lifting rod 7a and the fixed plate suspension 8 are connected in the vertical direction. They are fixed to each other, but are relatively free to rotate in the direction of rotation with the aforementioned axis L as the center.

然後,在工件40的研磨時,藉由前述昇降用致動器7使昇降桿7a伸長並使上定盤2下降至圖1的研磨位置為止時,設在該上定盤2的鉤9與前述第1驅動軸2a之上端的前述驅動器10卡合,藉此使該上定盤2透過前述驅動器10,以前述第1驅動軸2a來驅動、旋轉。 Then, during the grinding of the workpiece 40, when the lifting rod 7a is extended by the lifting actuator 7 and the upper platen 2 is lowered to the grinding position in FIG. 1, the hook 9 and the hook 9 provided on the upper platen 2 The driver 10 at the upper end of the first drive shaft 2a is engaged, so that the upper platen 2 passes through the driver 10 and is driven and rotated by the first drive shaft 2a.

在工件的非研磨時,藉由前述昇降用致動器7使昇降桿7a收縮,並使前述上定盤2從研磨位置上升至離開的退避位置後,解除前述鉤9與驅動器10的卡合。 During the non-grinding of the workpiece, the lifting rod 7a is contracted by the lifting actuator 7 and the upper surface plate 2 is raised from the grinding position to the retracted position, and then the hook 9 and the actuator 10 are released from engagement .

如圖1所示般,在前述上定盤2的下面與下定盤3的上面,分別黏貼有具有均勻厚度的研磨墊11。作為該研磨墊11,使用有不織布製者或聚氨酯製者。但是,研磨墊11並非必須,亦可為取代研磨墊11來黏貼砥石的構造或定盤面本身成為研磨面的構造。 As shown in FIG. 1, a polishing pad 11 having a uniform thickness is stuck on the lower surface of the upper surface plate 2 and the upper surface of the lower surface plate 3. As the polishing pad 11, a nonwoven fabric product or a polyurethane product is used. However, the polishing pad 11 is not essential, and it may be a structure in which the polishing pad 11 is adhered to a stone or a structure in which the surface of the table itself becomes a polishing surface.

前述載具30,係由不具有光透過性(透光性)或光透過性(透光性)較低的材料所成的載具。作為如此之載具的材質,有著:不鏽鋼、SK鋼、鈦等之金屬;陶瓷;使用玻璃纖維、碳纖維、芳綸纖維等的纖維強化塑膠;芳綸樹脂;氯乙烯;夾布酚醛塑料;或是將該等 以具有耐摩耗性、耐藥品性、耐久性的材料來塗覆者等,但在此以金屬來進行說明。如圖4所示般,載具30係在本體部31的外周具有齒輪31a,且在偏心的位置具有與工件成為相同形狀的1個工件保持孔32,在該工件保持孔32內保持有前述工件40(參照圖1及圖2)。該載具30,係載置於前述下定盤3的研磨墊11上,將外周的齒輪31a與前述太陽齒輪4和內齒輪5咬合,藉此以該等太陽齒輪4與內齒輪5的旋轉,來繞前述太陽齒輪4一邊自轉一邊公轉。 The aforementioned carrier 30 is a carrier made of a material that does not have light transmittance (translucency) or has low light transmittance (translucency). As the material of such a carrier, there are: stainless steel, SK steel, titanium and other metals; ceramics; fiber-reinforced plastics using glass fiber, carbon fiber, aramid fiber, etc.; aramid resin; vinyl chloride; cloth phenolic plastic; or Is to wait Those coated with materials having abrasion resistance, chemical resistance, and durability, etc., but metal is described here. As shown in FIG. 4, the carrier 30 has a gear 31a on the outer periphery of the body portion 31, and has a workpiece holding hole 32 having the same shape as the workpiece at an eccentric position. The workpiece holding hole 32 holds the aforementioned Work 40 (refer to FIGS. 1 and 2). The carrier 30 is placed on the polishing pad 11 of the lower platen 3, and the outer gear 31a is engaged with the sun gear 4 and the internal gear 5, thereby rotating the sun gear 4 and the internal gear 5, Come and revolve around the aforementioned sun gear 4 while rotating.

前述載具30,係製作得比研磨前之工件40的厚度還薄,且在將該研磨前的工件40保持在工件保持孔32時,該工件40從載具30的表面往上方突出(參照圖1及圖3)。 The aforementioned carrier 30 is made thinner than the thickness of the workpiece 40 before polishing, and when the workpiece 40 before polishing is held in the workpiece holding hole 32, the workpiece 40 protrudes upward from the surface of the carrier 30 (refer to Figure 1 and Figure 3).

且,前述載具30,係如圖4~圖7所示般,具有漿液導入孔33,在研磨工件40時,由未圖示的漿液供給部所供給的研磨漿液,係通過該漿液導入孔33而遍及工件40的表背面。 Furthermore, the aforementioned carrier 30, as shown in FIGS. 4 to 7, has a slurry introduction hole 33. When the workpiece 40 is polished, the polishing slurry supplied from a slurry supply part not shown passes through the slurry introduction hole. 33 and all over the front and back of the workpiece 40.

藉由前述平面研磨裝置1進行工件40的研磨之際,在使前述上定盤2上升至退避位置的狀態,如圖2所示般,將複數個前述載具30以等間隔配置在下定盤3上,並將形成於其外周的前述齒輪31a,咬合於前述太陽齒輪4和內齒輪5。然後,在各載具30的工件保持孔32保持工件40之後,如圖1所示般,使前述上定盤2下降至研磨位置,並以該上定盤2和下定盤3夾住載具30。 在此狀態,透過前述驅動軸2a~5a使上定盤2及下定盤3與太陽齒輪4及內齒輪5,以事先設定的旋轉方向及旋轉速度來旋轉,藉由在前述上定盤2與下定盤3之間供給研磨漿液,而使繞著前述太陽齒輪4自轉及公轉的前述載具30所保持的工件40的表背面被前述上定盤2與下定盤3給研磨。 When the workpiece 40 is polished by the plane polishing device 1, the upper platen 2 is raised to the retracted position, as shown in FIG. 2, a plurality of the carriers 30 are arranged on the lower platen at equal intervals 3, and the aforementioned gear 31a formed on its outer periphery is engaged with the aforementioned sun gear 4 and internal gear 5. Then, after the workpiece 40 is held in the workpiece holding hole 32 of each carrier 30, the upper platen 2 is lowered to the grinding position as shown in FIG. 1, and the carrier is clamped by the upper platen 2 and the lower platen 3 30. In this state, the upper fixed plate 2 and the lower fixed plate 3, the sun gear 4 and the internal gear 5 are rotated at the preset rotation direction and rotation speed through the aforementioned drive shafts 2a~5a. The grinding slurry is supplied between the lower platen 3 and the front and back surfaces of the workpiece 40 held by the carrier 30 that rotates and revolves around the sun gear 4 are ground by the upper platen 2 and the lower platen 3.

又,圖2的例中,係將4個載具30在圓周方向以等間隔並排,但配置在下定盤3上的載具30之數量為任意。 In the example of FIG. 2, four carriers 30 are arranged side by side at equal intervals in the circumferential direction, but the number of carriers 30 arranged on the bottom platen 3 is arbitrary.

且,本實施形態的平面研磨裝置1,係構成為:分別測量工件40的厚度(T)與載具30的厚度(t),且在該工件40的厚度與載具30的厚度之差(間隙)成為所期望之值的時間點結束研磨,來進行間隙管理方式的研磨。因此,前述平面研磨裝置1,係具有用來以雷射光測量工件40之厚度與載具30之厚度的光學式厚度測量裝置X。 In addition, the surface polishing apparatus 1 of this embodiment is configured to measure the thickness (T) of the workpiece 40 and the thickness (t) of the carrier 30, respectively, and the difference between the thickness of the workpiece 40 and the thickness of the carrier 30 ( The polishing is completed when the gap) becomes the desired value, and polishing in the gap management method is performed. Therefore, the aforementioned plane polishing device 1 has an optical thickness measuring device X for measuring the thickness of the workpiece 40 and the thickness of the carrier 30 with laser light.

前述厚度測量裝置X,係構成為:可在前述工件40的研磨中,即時地測量該工件40的厚度與前述載具30的厚度之雙方。因此該厚度測量裝置X,係如圖1所示般,具有:輸出紅外線波長領域之雷射光的光源部20;將由該光源部20所輸出的雷射光照射朝向工件40藉此測量該工件40之厚度的第1探頭21;以及將由前述光源部20所輸出的雷射光照射朝向載具30藉此測量該載具30之厚度的第2探頭50。 The thickness measuring device X is configured to be capable of instantly measuring both the thickness of the workpiece 40 and the thickness of the carrier 30 during the grinding of the workpiece 40. Therefore, the thickness measuring device X, as shown in FIG. 1, has: a light source unit 20 that outputs laser light in the infrared wavelength range; and irradiates the laser light output by the light source unit 20 toward the workpiece 40 to measure the workpiece 40 The thickness of the first probe 21; and the second probe 50 that irradiates the laser light output from the light source unit 20 toward the carrier 30 to measure the thickness of the carrier 30.

前述第1探頭21,係設置成與前述上定盤2一起旋轉。亦即,該第1探頭21,係於前述定盤懸吊件8或前述支承螺柱8a等,透過保持支架24而被安裝成朝向下,藉此配置在前述上定盤2的上方,且藉由第1光纜22,透過旋轉接頭23而連接於前述光源部20。然後,如圖3所示般,於前述工件40的研磨加工中,通過形成在前述上定盤2之測量用的第1測量窗部25對該工件40照射雷射光,並接受由該工件40之表面及背面所反射的反射光。根據所接受之反射光的測量資料,係通過前述第1光纜22送至演算控制部29,並在演算控制部29進行演算處理來算出工件40的厚度。 The first probe 21 is arranged to rotate together with the upper platen 2. That is, the first probe 21 is attached to the fixed plate suspension 8 or the supporting stud 8a, etc., and is mounted downward through the holding bracket 24, thereby being arranged above the upper plate 2, and The first optical cable 22 is connected to the aforementioned light source unit 20 through a rotary joint 23. Then, as shown in FIG. 3, in the grinding process of the workpiece 40, the workpiece 40 is irradiated with laser light through the first measurement window 25 formed on the upper surface plate 2 for measurement, and the workpiece 40 is received Reflected light reflected on the surface and back. Based on the received measurement data of reflected light, it is sent to the calculation control unit 29 through the first optical cable 22, and the calculation control unit 29 performs calculation processing to calculate the thickness of the workpiece 40.

前述第1探頭21所致之工件40之厚度的測量,係在繞太陽齒輪4自轉及公轉的載具30所保持的工件40通過前述第1探頭21的正下方亦即前述第1測量窗部25的正下方時進行。 The thickness of the workpiece 40 by the first probe 21 is measured when the workpiece 40 held by the carrier 30 that rotates and revolves around the sun gear 4 passes directly under the first probe 21, that is, the first measurement window. When it is directly below 25.

又,根據前述第1探頭21所接受之反射光的測量資料,係可通過前述第1光纜22以光的狀態直接送至前述演算控制部29,但亦可在前述第1探頭21變換成電氣訊號,通過藉由旋轉接頭23連結該第1探頭21與前述演算控制部29之未圖示的電氣纜線來送至前述演算控制部29,或是以無線傳送亦可。 In addition, based on the measurement data of the reflected light received by the first probe 21, it can be directly sent to the arithmetic control unit 29 through the first optical cable 22 in the state of light, but it can also be converted to electrical by the first probe 21. The signal is sent to the arithmetic control unit 29 via an electric cable (not shown) connecting the first probe 21 and the arithmetic control unit 29 via a rotary joint 23, or may be transmitted wirelessly.

前述第1測量窗部25,係配設在前述第1探頭21的正下方,具有:上下貫通該上定盤2的通過孔26、嵌合於該通過孔26的套管27、以及安裝於該套管27 之下端的透過板28。又,黏貼於前述上定盤2的研磨墊11,於設有前述第1測量窗部25的部分設有開口11a。 The first measurement window 25 is arranged directly below the first probe 21, and has a through hole 26 penetrating the upper platen 2 up and down, a sleeve 27 fitted into the through hole 26, and a The casing 27 The bottom through the plate 28. In addition, the polishing pad 11 adhered to the upper platen 2 has an opening 11a in the portion where the first measurement window 25 is provided.

前述套管27,係合成樹脂製或玻璃製等的圓筒體,具有與前述通過孔26之口徑大致相等的外徑,且上端的突緣部27a固定在上定盤2的上面。又,前述通過孔26及前述套管27並不限於圓筒體,亦可為多角筒體等之形狀。 The sleeve 27 is a cylindrical body made of synthetic resin or glass, and has an outer diameter approximately equal to the diameter of the passage hole 26, and the flange portion 27a at the upper end is fixed to the upper surface of the upper plate 2. In addition, the through hole 26 and the sleeve 27 are not limited to a cylindrical body, and may have a shape such as a polygonal cylindrical body.

且,前述透過板28,係由合成樹脂或玻璃等之具有光透過性(透光性)的材料,較佳為由透明的材料形成板狀者,並安裝成塞住前述套管27下端的開口。 In addition, the transparent plate 28 is made of synthetic resin or glass and other light-transmitting (translucent) material, preferably a transparent material formed into a plate shape, and installed so as to plug the lower end of the sleeve 27 Open up.

另一方面,用來測量載具30之厚度的前述第2探頭50,係朝向下安裝在前述支撐框架6,且藉由第2光纜51連接於前述光源部20。該第2探頭50,係與和上定盤2一起旋轉的前述第1探頭21不同,是在前述支撐框架6的定位置藉由適當的固定手段來固定配置。 On the other hand, the second probe 50 used to measure the thickness of the carrier 30 is mounted on the support frame 6 facing downward, and is connected to the light source unit 20 via a second optical cable 51. The second probe 50 is different from the first probe 21 that rotates with the upper platen 2 in that it is fixedly arranged at a fixed position of the support frame 6 by an appropriate fixing means.

由於係藉由前述第2探頭50,通過旋轉的前述上定盤2來測量載具30的厚度,故於該上定盤2設有一個或複數個用來使雷射光穿透的第2測量窗部52。在圖2所示的實施形態中,合計5個的第2測量窗部52,係在與前述第1測量窗部25相同的圓周上,以等間隔來配設。但是,前述第2測量窗部52的配設位置,亦可為與前述第1測量窗部25在上定盤2之半徑方向不同的位置。 Since the thickness of the carrier 30 is measured by the second probe 50 through the upper surface plate 2 that rotates, the upper surface plate 2 is provided with one or more second measurement devices for the laser light to penetrate窗部52. In the embodiment shown in FIG. 2, a total of five second measurement window portions 52 are arranged on the same circumference as the aforementioned first measurement window portion 25 and are arranged at equal intervals. However, the arrangement position of the second measurement window 52 may be a position different from the first measurement window 25 in the radial direction of the upper platen 2.

且,如圖8所示般,前述第2測量窗部52, 係與前述第1測量窗部25同樣地,具有:上下貫通上定盤2的通過孔26、嵌合於該通過孔26的套管27、以及安裝於該套管27之下端的透過板28。又,黏貼於前述上定盤2的研磨墊11,於設有前述第2測量窗部52的部分,與設有前述第1測量窗部25的部分同樣地設有開口11a。 And, as shown in FIG. 8, the aforementioned second measurement window 52, Like the first measurement window 25 described above, it has a through hole 26 that penetrates the upper platen 2 up and down, a sleeve 27 fitted in the through hole 26, and a permeable plate 28 attached to the lower end of the sleeve 27 . In addition, the polishing pad 11 adhered to the upper platen 2 is provided with an opening 11a in the portion where the second measurement window portion 52 is provided similarly to the portion where the first measurement window portion 25 is provided.

前述套管27,係合成樹脂製或玻璃製等的圓筒體,具有與前述通過孔26之口徑大致相等的外徑,且上端的突緣部27a固定在上定盤2的上面。又,前述通過孔26及前述套管27並不限於圓筒體,亦可為多角筒體等之形狀。 The sleeve 27 is a cylindrical body made of synthetic resin or glass, and has an outer diameter approximately equal to the diameter of the passage hole 26, and the flange portion 27a at the upper end is fixed to the upper surface of the upper plate 2. In addition, the through hole 26 and the sleeve 27 are not limited to a cylindrical body, and may have a shape such as a polygonal cylindrical body.

且,前述透過板28,係由合成樹脂或玻璃等之具有光透過性(透光性)的材料,較佳為由透明的材料形成板狀者,並安裝成塞住前述套管27下端的開口。 In addition, the transparent plate 28 is made of synthetic resin or glass and other light-transmitting (translucent) material, preferably a transparent material formed into a plate shape, and installed so as to plug the lower end of the sleeve 27 Open up.

但是,在前述載具30為金屬製的情況,即使以前述第2探頭50對該載具30照射雷射光,雷射光亦無法穿透該載具30,而無法得到來自該載具30之背面側的反射光,故無法測量該載具30的厚度。 However, when the carrier 30 is made of metal, even if the second probe 50 is used to irradiate the carrier 30 with laser light, the laser light cannot penetrate the carrier 30, and the back surface of the carrier 30 cannot be obtained. It is impossible to measure the thickness of the carrier 30 because of the reflected light from the side.

於是,本發明中,係如圖1~圖4所示般,於前述載具30形成有用來以雷射光測量厚度的1個厚度測量部Y。該厚度測量部Y,係由與前述工件保持孔32及漿液導入孔33形成在不同位置的測量孔34、和埋入至該測量孔34的透光構件35所形成。 Therefore, in the present invention, as shown in FIGS. 1 to 4, one thickness measuring part Y for measuring the thickness by laser light is formed on the carrier 30. The thickness measuring part Y is formed by a measuring hole 34 formed at a different position from the aforementioned workpiece holding hole 32 and slurry introduction hole 33 and a light-transmitting member 35 embedded in the measuring hole 34.

前述測量孔34,係將載具30從表面往背面貫 通之圓形的孔,其口徑以比前述工件保持孔32的口徑還小為佳。藉此,不會損及載具30的強度,可抑制設置在前述測量孔的前述透光構件35與研磨面接觸所產生的摩耗。該測量孔34,以盡量形成在接近載具30之中心的位置較佳。又,前述測量孔34的形狀並不限於圓形,亦可為多角形。 The aforementioned measuring hole 34 penetrates the carrier 30 from the surface to the back The diameter of the circular hole is preferably smaller than the diameter of the aforementioned workpiece holding hole 32. Thereby, the strength of the carrier 30 is not impaired, and the wear caused by the contact between the light-transmitting member 35 provided in the measuring hole and the polishing surface can be suppressed. The measuring hole 34 is preferably formed as close to the center of the carrier 30 as possible. In addition, the shape of the aforementioned measuring hole 34 is not limited to a circular shape, and may be a polygonal shape.

前述透光構件35,係以具有光透過性(透光性)的材料所形成,比前述本體部31的光透過性(透光性)還優異,且具有與前述本體部31之厚度相等的厚度,其表背面與前述本體部31的表背面成為相同平面,且嵌入至前述測量孔34內。 The light-transmitting member 35 is formed of a material having light-transmitting properties (light-transmitting), which is superior to the light-transmitting properties (light-transmitting) of the main body portion 31, and has a thickness equal to that of the main body portion 31. The thickness is such that the front and back surfaces of the main body portion 31 and the front and back surfaces are the same plane, and are inserted into the measuring hole 34.

由於在金屬製的載具30形成有上述般之由測量孔34及透光構件35所成的厚度測量部Y,藉此以前述第2探頭50來對該透光構件35照射雷射光,而可得到來自該透光構件35之表面及背面的反射光,其結果,可測量該載具30的厚度。 Since the metal carrier 30 is formed with the thickness measuring part Y formed by the measuring hole 34 and the light-transmitting member 35 as described above, the second probe 50 is used to irradiate the light-transmitting member 35 with laser light. The reflected light from the surface and back of the light-transmitting member 35 can be obtained, and as a result, the thickness of the carrier 30 can be measured.

前述透光構件35,作為具有光透過性(透光性)的材料,例如可由:丙烯酸系樹脂、聚氨酯系樹脂‧聚對苯二甲酸乙二酯樹脂(PET)等的合成樹脂;石英;藍寶石;玻璃;矽等所構成,重要的是適當選擇光透過性(透光性)比前述本體部31的材質還要優異的材料。特別是,重要的是適當選擇紅外線波長領域之雷射光的光透過性(透光性)比前述本體部31的材質還要優異的材料(紅外線透過材料)。又,該透光構件35對前述測量孔 34的安裝,例如,亦可由接著劑來接著,亦可為楔式嵌合,可用適當的手段來安裝。 The aforementioned light-transmitting member 35, as a material having light-transmitting properties (light-transmitting properties), can be, for example, acrylic resin, polyurethane resin·polyethylene terephthalate resin (PET) and other synthetic resins; quartz; sapphire ; Glass; silicon, etc., it is important to appropriately select a material that has better light transmittance (transmittance) than the material of the main body 31. In particular, it is important to appropriately select a material (infrared transmissive material) that is superior to the material of the main body 31 in the light transmittance (transmittance) of laser light in the infrared wavelength range. In addition, the light-transmitting member 35 faces the aforementioned measuring hole The installation of 34, for example, can also be connected by an adhesive, or a wedge fitting, and can be installed by appropriate means.

且,前述透光構件35的研磨速率,以與前述本體部31的研磨速率同等或比前述本體部31的研磨速率還低(較難研磨)為佳。其理由,係在研磨加工時,下定盤3的研磨面經常與前述本體部31的下面接觸故前述本體部31受到研磨,且,隨著研磨加工進行會使前述上定盤2與前述本體部31之上面的距離會縮短,使前述上定盤2的研磨面與前述本體部31的上面接觸,藉此會使前述本體部31受到研磨。因此,若前述透光構件35的研磨速率比前述本體部31的研磨速率還高(較易研磨)的話,該透光構件35會被研磨而變得比前述本體部31還薄,導致厚度的測量精度降低。 In addition, the polishing rate of the light-transmitting member 35 is preferably equal to or lower than the polishing rate of the main body 31 (more difficult to polish). The reason is that during the grinding process, the grinding surface of the lower platen 3 is always in contact with the lower surface of the body portion 31, so the body portion 31 is ground, and as the grinding process proceeds, the upper platen 2 and the body portion The distance between the upper surface of the upper surface 31 is shortened, and the grinding surface of the upper surface plate 2 is brought into contact with the upper surface of the main body portion 31, thereby causing the main body portion 31 to be ground. Therefore, if the polishing rate of the transparent member 35 is higher than the polishing rate of the main body 31 (easier to be polished), the transparent member 35 will be polished and become thinner than the main body 31, resulting in a thick The measurement accuracy is reduced.

如圖8所示般,在工件40的研磨加工中以前述第2探頭50所進行之載具30的厚度測量,係使形成於旋轉之上定盤2的前述第2測量窗部52、以及安裝在載具30的前述透光構件35,位在前述第2探頭50之正下方時來進行。此時,由前述第2探頭50對前述透光構件35所照射的雷射光,係在該透光構件35的表面及背面被反射,該反射光係作為測量資料而被前述第2探頭50接受。所接受的測量資料,係通過前述第2光纜51送至演算控制部29,並在演算控制部29進行演算處理來算出載具30的厚度。 As shown in FIG. 8, in the grinding process of the workpiece 40, the thickness measurement of the carrier 30 performed by the second probe 50 is the second measurement window 52 formed on the rotary table 2 and This is performed when the light-transmitting member 35 mounted on the carrier 30 is positioned directly below the second probe 50. At this time, the laser light irradiated by the second probe 50 to the light-transmitting member 35 is reflected on the surface and back of the light-transmitting member 35, and the reflected light is received by the second probe 50 as measurement data . The received measurement data is sent to the calculation control unit 29 via the aforementioned second optical cable 51, and the calculation control unit 29 performs calculation processing to calculate the thickness of the carrier 30.

來自前述第2探頭50的雷射光,可在工件40 的研磨加工中經常照射,但亦可控制成只有在上定盤2的第2測量窗部52與載具30的透光構件35並排在該第2探頭50之正下方的瞬間才照射。此情況,藉由將複數個第2測量窗部52予以等間隔配置,可用規則性的時序來進行照射。又,藉由複數設置第2測量窗部52,測量次數變多而提高測量精度。 The laser light from the aforementioned second probe 50 can be used on the workpiece 40 Irradiation is often performed during the polishing process, but it can be controlled to only irradiate at the moment when the second measuring window 52 of the upper platen 2 and the light-transmitting member 35 of the carrier 30 are aligned directly below the second probe 50. In this case, by arranging a plurality of second measurement windows 52 at equal intervals, irradiation can be performed with regular timing. In addition, by providing the second measurement window 52 in plural, the number of measurements is increased and the measurement accuracy is improved.

且,根據前述第2探頭50的測量資料,係可通過前述第2光纜51以光的狀態直接送至前述演算控制部29,但亦可在前述第2探頭50變換成電氣訊號,通過將該第2探頭50與前述演算控制部29予以連結之未圖示的電氣纜線來送至該演算控制部29,或是以無線傳送亦可。 In addition, the measurement data of the second probe 50 can be directly sent to the arithmetic control unit 29 in the state of light through the second optical cable 51, but it can also be converted into an electrical signal by the second probe 50. An electric cable (not shown) connected to the second probe 50 and the aforementioned arithmetic control unit 29 is sent to the arithmetic control unit 29, or wireless transmission may be used.

若在工件40的研磨加工中以此方式來測量工件40的厚度與載具30的厚度的話,兩者的測量資料係在前述演算控制部29進行比較,在工件40的厚度與載具30的厚度之差成為所期望之值的時間點結束研磨。 If the thickness of the workpiece 40 and the thickness of the carrier 30 are measured in this way during the grinding process of the workpiece 40, the two measurement data are compared in the aforementioned calculation control unit 29, and the thickness of the workpiece 40 is compared with the thickness of the carrier 30. Polishing ends when the difference in thickness reaches a desired value.

又,如上述般在工件40的研磨加工中對該工件40的厚度與載具30的厚度進行測量的情況,雖然前述第1探頭21及第2探頭50,係接受來自前述工件40之表背面的反射光、以及來自前述載具30之透光構件35之表背面的反射光之雙方的反射光,但兩者的峰值有著差異,有必要利用其差異來調整成:使前述第1探頭21僅接受來自工件40的反射光作為測量資料,且使第2探頭50僅接受來自載具30之透光構件35的反射光作為測量資料。 In addition, when measuring the thickness of the workpiece 40 and the thickness of the carrier 30 during the grinding process of the workpiece 40 as described above, although the first probe 21 and the second probe 50 are received from the front and back of the workpiece 40 The reflected light of both the reflected light and the reflected light from the front and back of the light-transmitting member 35 of the carrier 30, but the peak values of the two are different, and it is necessary to use the difference to adjust to: make the first probe 21 Only the reflected light from the workpiece 40 is accepted as the measurement data, and the second probe 50 only accepts the reflected light from the light-transmitting member 35 of the carrier 30 as the measurement data.

前述載具30的厚度測量,可在沒有研磨工件40的時候進行。例如,在研磨開始前將新的工件40設置於載具30時,或是在工件40的研磨後使用純水進行洗滌步驟時等,可利用批次處理間的時間來進行。此時的厚度測量,係使該上定盤2停止而使該上定盤2之任何一個第2測量窗部52位在第2探頭50之正下方的位置,慢慢使太陽齒輪4與內齒輪5旋轉來使載具30自轉及公轉,使前述透光構件35通過前述第2測量窗部52下方來進行。如上述般,在工件40之非研磨時進行載具30之厚度測量的裝置中,形成於上定盤2的前述第2測量窗部52亦可為一個。 The thickness measurement of the aforementioned carrier 30 can be performed when the workpiece 40 is not being ground. For example, when the new workpiece 40 is set on the carrier 30 before the grinding starts, or when the washing step is performed with pure water after the grinding of the workpiece 40, the time between batch processing can be used. The thickness measurement at this time is to stop the upper plate 2 so that any of the second measurement windows 52 of the upper plate 2 are positioned directly below the second probe 50, and slowly connect the sun gear 4 to the inner The gear 5 rotates to cause the carrier 30 to rotate and revolve, and the light-transmitting member 35 passes under the second measurement window 52. As described above, in the device for measuring the thickness of the carrier 30 when the workpiece 40 is not being polished, there may be one second measurement window 52 formed on the upper platen 2.

於圖5~圖7表示關於本發明之載具30的變形例。 5 to 7 show a modification of the carrier 30 of the present invention.

圖5所示的載具30和圖4所示的載具30之不同處,係3個厚度測量部Y在載具30的圓周方向以等間隔(120度間隔)形成。如上述般,藉由設置複數個厚度測量部Y,來增大測量資料的取得數量。 The difference between the carrier 30 shown in FIG. 5 and the carrier 30 shown in FIG. 4 is that three thickness measuring parts Y are formed at equal intervals (120-degree intervals) in the circumferential direction of the carrier 30. As described above, by providing a plurality of thickness measurement parts Y, the number of acquisitions of measurement data can be increased.

於圖6所示的載具30,在載具30的圓周方向以等間隔(120度間隔)形成有3個工件保持孔32,且在鄰接之前述工件保持孔32間個別地形成有3個漿液導入孔33,於該載具30的中心部形成有單一的厚度測量部Y。載具30的中心部,係在該載具30自轉及公轉之際移動量最少的位置,故藉由在此處設置厚度測量部Y,有著在研磨加工中不容易使透光構件35被上定盤2和下定盤3研磨的 優點。 In the carrier 30 shown in FIG. 6, three workpiece holding holes 32 are formed at equal intervals (120 degree intervals) in the circumferential direction of the carrier 30, and three adjacent workpiece holding holes 32 are individually formed The slurry introduction hole 33 has a single thickness measuring part Y formed in the center of the carrier 30. The center part of the carrier 30 is at the position where the movement of the carrier 30 is the least when it rotates and revolves. Therefore, by providing the thickness measuring part Y here, it is not easy to place the light-transmitting member 35 in the grinding process. Grinding plate 2 and bottom plate 3 advantage.

圖7所示的載具30和圖6所示的載具30之不同處,係形成有複數個厚度測量部Y。亦即,分別夾持各漿液導入孔33來形成2個厚度測量部Y,藉此共形成有三組亦即6個厚度測量部Y。 The difference between the carrier 30 shown in FIG. 7 and the carrier 30 shown in FIG. 6 is that a plurality of thickness measuring parts Y are formed. That is, each of the slurry introduction holes 33 is sandwiched to form two thickness measuring parts Y, whereby a total of three groups, that is, six thickness measuring parts Y are formed.

如此一來,本實施形態的平面研磨裝置1中,即使在照射雷射光時使用由具有比來自工件40之反射光強度還低反射光強度的材料所成的載具30,亦可測量工件40的厚度與載具30的厚度並以間隙管理方式來進行研磨,其結果,可得到具有高平面度的工件40。而且,前述載具30之厚度的測量,係將該載具30設置在平面研磨裝置不必取出就可藉由雷射光來進行,故不像以往的裝置那般,必須將載具從裝置取出並藉由測微器等來進行測量,故省去測量的麻煩而有優異的作業性。且,由於沒有必要每次都進行載具的拆除、再裝填,可防止載具的變形或破損,故可防止由該變形或破損所起因之上下定盤對研磨面的接觸成為不均勻且研磨面的狀態成為不安定導致工件的加工精度偏差的發生,其結果,可實現穩定的研磨加工。 In this way, in the surface polishing apparatus 1 of the present embodiment, even if the carrier 30 made of a material having a reflected light intensity lower than the reflected light intensity from the workpiece 40 is used when the laser light is irradiated, the workpiece 40 can be measured. The thickness of φ and the thickness of the carrier 30 are polished in a gap management manner. As a result, a workpiece 40 with high flatness can be obtained. Moreover, the measurement of the thickness of the aforementioned carrier 30 can be carried out by laser light without taking out the carrier 30 by setting the carrier 30 in the flat polishing device. Therefore, unlike the conventional device, the carrier must be removed from the device and The measurement is performed by a micrometer, etc., so it saves the trouble of measurement and has excellent workability. Moreover, since it is not necessary to remove and reload the carrier every time, it can prevent the deformation or damage of the carrier, so it can prevent the contact between the upper and lower plates on the grinding surface from becoming uneven and grinding due to the deformation or damage. When the state of the surface becomes unstable, deviations in the machining accuracy of the workpiece occur, and as a result, stable polishing processing can be realized.

以上,針對關於本發明的平面研磨裝置進行了說明,但本發明並不限定於上述的實施形態及變形例,在不超脫申請專利範圍主旨的範圍內可進行各種設計變更。例如,如前述般,前述第1探頭21及第2探頭50,係可接受來自前述工件40之表背面的反射光、以及來自前述載具30之透光構件35之表背面的反射光等雙方的反 射光,故可省略任一方的探頭,構成為藉由第1探頭21或第2探頭50來測量工件40的厚度與載具30的厚度之雙方。且,亦可構成為省略第1測量窗部25和第2測量窗部52之任一方的測量窗部,而藉由第1測量窗部25或第2測量窗部52來測量工件40的厚度與載具30的厚度之雙方。 As mentioned above, the surface polishing device of the present invention has been described, but the present invention is not limited to the above-mentioned embodiments and modifications, and various design changes can be made without departing from the scope of the patent application. For example, as described above, the first probe 21 and the second probe 50 can receive both the reflected light from the front and back surfaces of the workpiece 40 and the reflected light from the front and back surfaces of the light-transmitting member 35 of the carrier 30. The anti Since light is emitted, either of the probes can be omitted, and the first probe 21 or the second probe 50 is configured to measure both the thickness of the workpiece 40 and the thickness of the carrier 30. Moreover, it may be configured to omit any one of the first measurement window 25 and the second measurement window 52, and use the first measurement window 25 or the second measurement window 52 to measure the thickness of the workpiece 40 And the thickness of the carrier 30.

1:平面研磨裝置 1: Plane grinding device

2:上定盤 2: Upper fixing

2a:第1驅動軸 2a: 1st drive shaft

3:下定盤 3: next fix

3a:第2驅動軸 3a: 2nd drive shaft

4:太陽齒輪 4: Sun gear

4a:第3驅動軸 4a: 3rd drive shaft

5:內齒輪 5: Internal gear

5a:第4驅動軸 5a: 4th drive shaft

6:支撐框架 6: Support frame

7:昇降用致動器 7: Actuator for lifting

7a:昇降桿 7a: Lifting rod

8:定盤懸吊件 8: Fixing plate suspension

8a:支承螺柱 8a: Support stud

9:鉤 9: hook

10:驅動器 10: Drive

11:研磨墊 11: Grinding pad

11a:開口 11a: opening

12:軸承 12: Bearing

20:光源部 20: Light source

21:第1探頭 21: The first probe

22:第1光纜 22: The first optical cable

23:旋轉接頭 23: Rotary joint

24:保持支架 24: Keep the bracket

25:第1測量窗部 25: The first measurement window

29:演算控制部 29: Calculation Control Department

30:載具 30: Vehicle

31:本體部 31: body part

32:工件保持孔 32: Workpiece holding hole

34:測量孔 34: Measuring hole

35:透光構件 35: light transmitting member

40:工件 40: Workpiece

50:第2探頭 50: 2nd probe

51:第2光纜 51: 2nd optical cable

52:第2測量窗部 52: The second measurement window

X:厚度測量裝置 X: Thickness measuring device

Y:厚度測量部 Y: Thickness measurement department

Claims (6)

一種平面研磨裝置,係具有配置成旋轉自如的上定盤及下定盤、以及用來保持工件的載具,將被保持於該載具的前述工件以前述上定盤及下定盤來夾持並研磨該工件的兩面,其特徵為,前述平面研磨裝置,具有用來測量前述工件及載具之厚度的厚度測量裝置,前述厚度測量裝置,係構成為將雷射光照向前述工件及載具,且根據來自該工件及載具之表面的反射光與來自背面的反射光來測量該工件及載具的厚度,前述載具,係具有:具有用來保持前述工件之工件保持孔的本體部、以及用來測量該載具之厚度的厚度測量部,該厚度測量部,係具有形成在與前述工件保持孔不同位置的測量孔、以及嵌入至該測量孔的透光構件,該透光構件的光透過性係比前述本體部還優異,且,該透光構件的厚度係與前述本體部的厚度相等,且,該透光構件的表背面係與前述本體部的表背面位在相同平面。 A surface grinding device is provided with an upper and lower plate that are configured to rotate freely, and a carrier for holding a workpiece, and the workpiece held on the carrier is clamped and held by the upper and lower plates. Grinding both sides of the workpiece is characterized in that the plane polishing device has a thickness measuring device for measuring the thickness of the workpiece and the carrier, and the thickness measuring device is configured to direct laser light to the workpiece and the carrier, The thickness of the workpiece and the carrier is measured according to the reflected light from the surface of the workpiece and the carrier and the reflected light from the back. The carrier has: a body portion with a workpiece holding hole for holding the workpiece, And a thickness measuring part used to measure the thickness of the carrier, the thickness measuring part having a measuring hole formed at a position different from the aforementioned workpiece holding hole, and a light-transmitting member embedded in the measuring hole, the light-transmitting member The light transmittance is better than that of the main body, and the thickness of the light-transmitting member is equal to the thickness of the main body, and the front and back of the light-transmitting member are on the same plane as the front and back of the main body. 如請求項1所述之平面研磨裝置,其中,前述測量孔的口徑,比前述工件保持孔的口徑還小。 The surface polishing device according to claim 1, wherein the diameter of the measuring hole is smaller than the diameter of the workpiece holding hole. 如請求項1或2所述之平面研磨裝置,其中,前述透光構件的研磨速率,係與前述本體部的研磨速率同等或在其之下。 The surface polishing device according to claim 1 or 2, wherein the polishing rate of the light-transmitting member is equal to or lower than the polishing rate of the main body. 一種載具,其配置在平面研磨裝置的上定盤與下 定盤之間,用來保持被該上定盤與下定盤研磨的工件,其特徵為,前述載具,係具有:具有用來保持前述工件之工件保持孔的本體部、以及用來以雷射光測量該載具之厚度的厚度測量部,該厚度測量部,係具有形成在與前述工件保持孔不同位置的測量孔、以及嵌入至該測量孔的透光構件,該透光構件的光透過性係比前述本體部還優異,且,該透光構件的厚度係與前述本體部的厚度相等,且,該透光構件的表背面係與前述本體部的表背面位在相同平面。 A carrier, which is arranged on the upper and lower plates of a plane grinding device Between the fixed plates, it is used to hold the workpiece ground by the upper and lower fixed plates. The carrier is characterized in that the carrier has: a body portion with a workpiece holding hole for holding the workpiece, and a mine A thickness measuring part for measuring the thickness of the carrier by light irradiation. The thickness measuring part has a measuring hole formed at a position different from the aforementioned workpiece holding hole, and a light-transmitting member embedded in the measuring hole. The light of the light-transmitting member transmits The performance is better than that of the main body, and the thickness of the light-transmitting member is equal to the thickness of the main body, and the front and back of the light-transmitting member are on the same plane as the front and back of the main body. 如請求項4所述之載具,其中,前述測量孔的口徑,比前述工件保持孔的口徑還小。 The carrier according to claim 4, wherein the diameter of the measuring hole is smaller than the diameter of the workpiece holding hole. 如請求項4或5所述之載具,其中,前述透光構件的研磨速率,係與前述本體部的研磨速率同等或在其之下。 The carrier according to claim 4 or 5, wherein the polishing rate of the transparent member is equal to or lower than the polishing rate of the main body.
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6760638B2 (en) * 2016-04-14 2020-09-23 スピードファム株式会社 Flat surface polishing device
CN107486786A (en) * 2017-10-01 2017-12-19 德清凯晶光电科技有限公司 Anti- turned-down edge erratic star wheel
JP7035748B2 (en) * 2018-04-11 2022-03-15 株式会社Sumco Work double-sided polishing device
JP7046358B2 (en) * 2018-04-17 2022-04-04 スピードファム株式会社 Polishing equipment
JP7364217B2 (en) * 2019-11-05 2023-10-18 スピードファム株式会社 polishing equipment
JP2021102245A (en) * 2019-12-25 2021-07-15 スピードファム株式会社 Workpiece hole detection device and workpiece hole detection method
JP7435113B2 (en) * 2020-03-23 2024-02-21 株式会社Sumco Double-sided polishing device for workpieces
JP7425411B2 (en) * 2020-10-12 2024-01-31 株式会社Sumco Carrier measurement device, carrier measurement method, and carrier management method
CN117506703B (en) * 2023-12-01 2024-05-10 苏州博宏源机械制造有限公司 Measuring device and polishing system

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021109A (en) * 2008-07-31 2010-06-01 Shinetsu Handotai Kk Wafer polishing method and double side polishing apparatus
EP1970163B1 (en) * 2007-03-15 2010-09-22 Fujikoshi Machinery Corporation Double-side polishing apparatus
TW201304404A (en) * 2011-03-28 2013-01-16 Seiko Instr Inc Polishing method, manufacturing method of piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic apparatus and radio-controlled timepiece
WO2013051184A1 (en) * 2011-10-04 2013-04-11 信越半導体株式会社 Wafer processing method
TW201436012A (en) * 2012-11-13 2014-09-16 Shinetsu Handotai Kk Double-sided polishing method
WO2014185008A1 (en) * 2013-05-16 2014-11-20 信越半導体株式会社 Method for double-sided polishing of wafer, and double-sided-polishing system
TW201515768A (en) * 2013-08-30 2015-05-01 Sumco Corp Device and method for polishing workpiece at double sides
TW201536473A (en) * 2013-12-26 2015-10-01 Sumco Corp Double-sided workpiece polishing apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61213611A (en) * 1985-03-19 1986-09-22 Nec Corp Polishing method for crystal
JPH05309559A (en) * 1992-05-12 1993-11-22 Speedfam Co Ltd Plane surface polishing method and device
JPH0740233A (en) * 1993-07-27 1995-02-10 Speedfam Co Ltd Thickness measuring device of work
JP3326443B2 (en) * 1993-08-10 2002-09-24 株式会社ニコン Wafer polishing method and apparatus therefor
DE69632490T2 (en) * 1995-03-28 2005-05-12 Applied Materials, Inc., Santa Clara Method and device for in-situ control and determination of the end of chemical mechanical grading
JP2888339B1 (en) * 1998-03-27 1999-05-10 直江津電子工業株式会社 Workpiece holding plate
JP2010045279A (en) * 2008-08-18 2010-02-25 Nippon Steel Corp Method for polishing both surface of semiconductor substrate
CN201419354Y (en) * 2009-04-29 2010-03-10 上海合晶硅材料有限公司 Planet wafer for processing thin-type single crystal silicon wafer
KR20150053049A (en) * 2013-11-07 2015-05-15 주식회사 엘지실트론 Double Side Polishing Method for Wafer

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1970163B1 (en) * 2007-03-15 2010-09-22 Fujikoshi Machinery Corporation Double-side polishing apparatus
TW201021109A (en) * 2008-07-31 2010-06-01 Shinetsu Handotai Kk Wafer polishing method and double side polishing apparatus
TW201304404A (en) * 2011-03-28 2013-01-16 Seiko Instr Inc Polishing method, manufacturing method of piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic apparatus and radio-controlled timepiece
WO2013051184A1 (en) * 2011-10-04 2013-04-11 信越半導体株式会社 Wafer processing method
TW201436012A (en) * 2012-11-13 2014-09-16 Shinetsu Handotai Kk Double-sided polishing method
WO2014185008A1 (en) * 2013-05-16 2014-11-20 信越半導体株式会社 Method for double-sided polishing of wafer, and double-sided-polishing system
TW201515768A (en) * 2013-08-30 2015-05-01 Sumco Corp Device and method for polishing workpiece at double sides
TW201536473A (en) * 2013-12-26 2015-10-01 Sumco Corp Double-sided workpiece polishing apparatus

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