TW201536473A - Double-sided workpiece polishing apparatus - Google Patents
Double-sided workpiece polishing apparatus Download PDFInfo
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- TW201536473A TW201536473A TW103136577A TW103136577A TW201536473A TW 201536473 A TW201536473 A TW 201536473A TW 103136577 A TW103136577 A TW 103136577A TW 103136577 A TW103136577 A TW 103136577A TW 201536473 A TW201536473 A TW 201536473A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
本發明係有關於一種工件之兩面研磨裝置。 The present invention relates to a two-sided grinding apparatus for a workpiece.
在是供研磨之工件之典型例的矽晶圓等之半導體晶圓的製造,為了得到更高精度之晶圓的平坦度品質或表面粗糙度品質,一般採用同時研磨晶圓之表背面的兩面研磨製程。 In the manufacture of semiconductor wafers such as tantalum wafers, which are typical examples of workpieces to be polished, in order to obtain higher-precision wafer flatness quality or surface roughness quality, it is generally used to simultaneously polish both sides of the front and back sides of the wafer. Grinding process.
尤其,近年來,從由於半導體元件之微細化與半導體晶圓之大口徑化而在曝光時之半導體晶圓的平坦度要求變得嚴格的背景,在適當的時序結束研磨係重要,藉由作業員調整研磨時間,控制之。 In particular, in recent years, from the viewpoint of the miniaturization of semiconductor elements and the large diameter of semiconductor wafers, the requirement for flatness of semiconductor wafers during exposure is severe, and it is important to finish polishing at an appropriate timing. The staff adjusts the grinding time and controls it.
可是,在藉作業員之研磨時間的調整,研磨副資材之更換時期、或裝置之停止之時序的偏差等,受到研磨環境所造成之影響大,而未必正確地控制研磨量,結果,大多得抑賴作業員之經驗。 However, the adjustment of the polishing time by the operator, the timing of the replacement of the polishing sub-material, or the deviation of the timing of stopping the device, etc., are greatly affected by the polishing environment, and the polishing amount is not necessarily controlled correctly. As a result, most of them are obtained. Defy the experience of the operator.
相對地,例如在專利文獻1,如第3圖所示,提議一種兩面研磨裝置,該兩面研磨裝置係設置:研磨布94,係將孔92設置於上平台91(或下平台),並在上下平台91的研磨面之對應於孔92的位置鑽直徑比孔92大的穴93;及窗構件95,係直徑比孔92大,且比研磨布94之穴93小,厚度比研磨布94薄。 In contrast, for example, in Patent Document 1, as shown in FIG. 3, a double-sided polishing apparatus is proposed which is provided with a polishing cloth 94 which is provided with a hole 92 on the upper stage 91 (or the lower stage), and The grinding surface of the upper and lower stages 91 corresponds to the hole 93 having a larger diameter than the hole 92; and the window member 95 is larger in diameter than the hole 92 and smaller than the hole 93 of the polishing cloth 94, and has a thickness ratio of the polishing cloth 94. thin.
在此兩面研磨裝置,使用量測機構(未圖示),可在研磨中從孔92即時測量工件W的厚度。 In the two-sided polishing apparatus, a measuring mechanism (not shown) is used to instantly measure the thickness of the workpiece W from the hole 92 during grinding.
[專利文獻1]日本專利4654275號公報 [Patent Document 1] Japanese Patent No. 4654275
可是,在專利文獻1之兩面研磨裝置,在研磨中研磨液彈跳而與黏著層96接觸,使黏著層96溶出至研磨液,而降低黏著力或使窗構件95剝離,因剝離之窗構件95與工件W接觸,污染或弄傷工件W,可能使晶圓品質劣化。 However, in the two-side polishing apparatus of Patent Document 1, the polishing liquid bounces during the polishing to come into contact with the adhesive layer 96, and the adhesive layer 96 is eluted to the polishing liquid to lower the adhesion or peel the window member 95 due to the peeling of the window member 95. Contact with the workpiece W, contaminating or injuring the workpiece W may deteriorate the quality of the wafer.
另一方面,在不安裝窗構件95下從孔92測量晶圓厚度的手法,研磨液浸入至孔92,由於研磨液固接於藉孔92所劃分之平台91的內壁,或已固接之研磨剝離,可能在晶圓W產生刮傷等之傷痕,因此,擔心晶圓品質之降低。而且,這些係不僅晶圓,而且是在圓盤狀之工件的兩面研磨一般會發生的問題。 On the other hand, the method of measuring the thickness of the wafer from the hole 92 without installing the window member 95, the slurry is immersed in the hole 92, and the slurry is fixed to the inner wall of the platform 91 divided by the hole 92, or is fixed. Since the polishing is peeled off, scratches such as scratches may occur on the wafer W, and thus there is a concern that the quality of the wafer is lowered. Moreover, these are not only wafers, but also problems that generally occur on both sides of a disk-shaped workpiece.
本發明係為了解決上述之問題而開發的,其目的在於提供一種工件之兩面研磨裝置,該兩面研磨裝置係可即時測量工件的厚度,並可防止工件受到污染或受損。 The present invention has been made in order to solve the above problems, and an object thereof is to provide a two-face grinding device for a workpiece which can measure the thickness of a workpiece in an instant and prevent the workpiece from being contaminated or damaged.
本發明之主旨構成係如以下所示。 The gist of the present invention is as follows.
本發明之工件的兩面研磨裝置係包括:旋轉平台,係具有上平台及下平台;太陽齒輪,係設置於該旋轉平台之旋轉中 心;內齒輪,係設置於該旋轉平台之外周部;及托運板,係設置於該上平台與該下平台之間,並具有固持工件之一個以上的固持孔,研磨墊分別被黏貼於該上平台之下面及該下平台的上面,其特徵在於:該上平台或該下平台具有從該上平台或該下平台之上面貫穿至下面之一個以上的孔;該研磨墊係將穴設置於對應於該孔的位置;更具備工件厚度計,該工件厚度計係在該工件之兩面研磨中,可從該一個以上的孔及穴即時地測量該工件的厚度;將凹部設置於藉該孔所劃分之該上平台之側壁的底部或藉該孔所劃分之該下平台之側壁的頂部;將直徑比該孔之直徑及該穴之直徑大的窗構件配置於該凹部;該窗構件係經由黏著層,固接於藉設置於該上平台之該凹部所劃分的上側面或藉設置於該下平台之該凹部所劃分的下側面。 The double-face grinding device of the workpiece of the present invention comprises: a rotating platform having an upper platform and a lower platform; and a sun gear disposed in the rotation of the rotating platform The inner gear is disposed at a periphery of the rotating platform; and the shipping plate is disposed between the upper platform and the lower platform, and has one or more retaining holes for holding the workpiece, and the polishing pads are respectively adhered to the a lower surface of the upper platform and an upper surface of the lower platform, wherein the upper platform or the lower platform has one or more holes penetrating from the upper surface of the upper platform or the lower platform to the lower surface; the polishing pad is configured to set the hole Corresponding to the position of the hole; further comprising a workpiece thickness meter, wherein the workpiece thickness gauge is in the grinding of the two sides of the workpiece, the thickness of the workpiece can be measured instantaneously from the one or more holes and holes; and the concave portion is disposed on the hole Dividing the bottom of the side wall of the upper platform or the top of the side wall of the lower platform divided by the hole; arranging a window member having a diameter larger than a diameter of the hole and a diameter of the hole; the window member The adhesive layer is fixed to the upper side surface defined by the concave portion provided on the upper platform or the lower side surface defined by the concave portion provided on the lower platform.
又,在本發明之工件的兩面研磨裝置,該窗構件之直徑係和該凹部與該孔所構成之空洞部分的直徑相等較佳。 Further, in the double-face grinding device of the workpiece of the present invention, the diameter of the window member and the diameter of the recess portion and the hollow portion formed by the hole are preferably equal.
進而,在本發明之工件的兩面研磨裝置,該凹部之高度係與該窗構件之厚度和該黏著層之厚度的和相等較佳。 Further, in the double-faced polishing apparatus of the workpiece of the present invention, the height of the recess is preferably equal to the sum of the thickness of the window member and the thickness of the adhesive layer.
若依據本發明,可提供一種工件之兩面研磨裝置,該兩面研磨裝置係可即時測量工件的厚度,並可防止工件受到污染或受損。 According to the present invention, it is possible to provide a two-face grinding device for a workpiece which can instantly measure the thickness of a workpiece and prevent the workpiece from being contaminated or damaged.
1‧‧‧兩面研磨裝置 1‧‧‧Two-side grinding device
2‧‧‧上平台 2‧‧‧Upper platform
3‧‧‧下平台 3‧‧‧Under platform
4‧‧‧旋轉平台 4‧‧‧Rotating platform
5‧‧‧太陽齒輪 5‧‧‧Sun gear
6‧‧‧內齒輪 6‧‧‧Internal gear
7‧‧‧研磨墊 7‧‧‧ polishing pad
8‧‧‧固持孔 8‧‧‧ holding holes
9‧‧‧托運板 9‧‧‧Train board
10‧‧‧孔 10‧‧‧ hole
11‧‧‧穴 11‧‧‧ points
12‧‧‧工件厚度計 12‧‧‧Workpiece thickness gauge
13‧‧‧凹部 13‧‧‧ recess
14‧‧‧窗構件 14‧‧‧Window components
15‧‧‧黏著層 15‧‧‧Adhesive layer
16‧‧‧上側面 16‧‧‧Upper side
W‧‧‧工件(晶圓) W‧‧‧Workpiece (wafer)
第1圖係本發明之一實施形態之兩面研磨裝置的剖面圖。 Fig. 1 is a cross-sectional view showing a double-face polishing apparatus according to an embodiment of the present invention.
第2圖係表示本發明之一實施形態之工件的兩面研磨裝置 之主要部的局部剖面圖。 Figure 2 is a two-side polishing apparatus for a workpiece according to an embodiment of the present invention. A partial cross-section of the main part.
第3圖係表示以往之工件的兩面研磨裝置之主要部的局部剖面圖。 Fig. 3 is a partial cross-sectional view showing a main part of a conventional double-face polishing apparatus.
以下,參照圖面,詳細地舉例表示並說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described and illustrated in detail with reference to the drawings.
第1圖係本發明之一實施形態之兩面研磨裝置的剖面圖。如第1圖所示,此兩面研磨裝置1包括:旋轉平台4,係具有上平台2及與上平台2相對向之下平台3;太陽齒輪5,係設置於旋轉平台4之旋轉中心;及內齒輪6,係圓環狀地設置於旋轉平台4之外周部。如第1圖所示,在上下之旋轉平台4的相對向面,即,係上平台2之研磨面的下面側及係下平台3之研磨面的上面側,分別貼上研磨墊7。 Fig. 1 is a cross-sectional view showing a double-face polishing apparatus according to an embodiment of the present invention. As shown in FIG. 1 , the double-sided grinding apparatus 1 includes a rotating platform 4 having an upper platform 2 and a platform 3 opposite to the upper platform 2; a sun gear 5 disposed at a rotation center of the rotating platform 4; The internal gear 6 is annularly provided on the outer peripheral portion of the rotary table 4. As shown in Fig. 1, the polishing pad 7 is attached to the opposing surface of the upper and lower rotating stages 4, that is, the lower surface side of the polishing surface of the upper platform 2 and the upper surface side of the polishing surface of the lower platform 3.
又,如第1圖所示,此裝置1具備在圖示例為一片之托運板9,該托運板9係設置於上平台2與下平台3之間,並具有固持工件之一個以上的固持孔8。此外,在圖示例,此裝置1具備僅一片托運板9,但是亦可具有複數片托運板9。在圖示例,工件(在本實施形態為晶圓)W被固持於固持孔8。 Further, as shown in Fig. 1, the apparatus 1 is provided with a pallet 9 which is illustrated as a piece, and the pallet 9 is disposed between the upper platform 2 and the lower platform 3 and has one or more holdings for holding the workpiece. Hole 8. Further, in the illustrated example, the apparatus 1 is provided with only one pallet 1 but may also have a plurality of pallets 9. In the example of the drawing, the workpiece (wafer in the present embodiment) W is held by the holding hole 8.
在此,此裝置1係藉由使太陽齒輪5與內齒輪6轉動,可使托運板9進行公轉運動及自轉運動之行星運動。即,一面供給研磨液,一面使托運板9進行行星運動,同時使上平台2及下平台3對托運板9相對地旋轉,藉此,使黏貼於上下之旋轉平台4的研磨墊7與托運板9之固持孔8所固持之工件W的兩面滑動,而可同時研磨工件W的兩面。 Here, the device 1 can rotate the sun gear 5 and the internal gear 6, so that the pallet 9 can perform planetary motion of the revolving motion and the rotation motion. In other words, while the polishing liquid is supplied, the pallet 9 is moved in a planetary motion, and the upper platform 2 and the lower platform 3 are relatively rotated with respect to the pallet 9, whereby the polishing pad 7 adhered to the upper and lower rotating platforms 4 and the consignment are carried. Both sides of the workpiece W held by the holding holes 8 of the plate 9 are slid, and both sides of the workpiece W can be simultaneously polished.
如第1圖所示,上平台2係具有從該上平台2之上面貫穿至下面之一個以上(在圖示例為一個)的孔10。又,在研磨墊7,將穴11設置於對應於孔10的位置。在本例,孔10之直徑d1與穴11之直徑d3係相等。而且,在該孔10的上方,具備工件厚度計12,係在工件W之兩面研磨中可從孔10及穴11即時地測量工件W的厚度。此外,工件厚度計12可採用例如波長可變式之紅外線雷射測量儀器。若依據這種測量儀器,評估在工件W之表面的反射光與在背面之反射光的干涉,可測量工件W的厚度。 As shown in Fig. 1, the upper platform 2 has a hole 10 that penetrates one or more (one in the figure) from the upper surface of the upper platform 2 to the lower surface. Further, in the polishing pad 7, the hole 11 is placed at a position corresponding to the hole 10. In this example, the diameter d1 of the hole 10 is equal to the diameter d3 of the hole 11. Further, a workpiece thickness gauge 12 is provided above the hole 10, and the thickness of the workpiece W can be instantaneously measured from the hole 10 and the hole 11 during the polishing of both surfaces of the workpiece W. Further, the workpiece thickness gauge 12 may employ, for example, a variable wavelength infrared laser measuring instrument. According to this measuring instrument, the thickness of the workpiece W can be measured by evaluating the interference of the reflected light on the surface of the workpiece W with the reflected light on the back surface.
在此,第2圖係表示第1圖所示之工件的兩面研磨裝置1之主要部的局部剖面圖。如第1圖、第2圖所示,在藉孔10所劃分之上平台2之側壁2a的底部2b(即,側壁2a之底面側的角部),設置凹部13。 Here, Fig. 2 is a partial cross-sectional view showing the main part of the double-face polishing apparatus 1 of the workpiece shown in Fig. 1. As shown in FIGS. 1 and 2, the recessed portion 13 is provided in the bottom portion 2b of the side wall 2a of the platform 2 (i.e., the corner portion on the bottom surface side of the side wall 2a).
在本實施形態,凹部13係作成圓環狀地鑿穿底部2b之形狀的空洞部分。 In the present embodiment, the recessed portion 13 is formed as a hollow portion that is cut into the shape of the bottom portion 2b in an annular shape.
而且,如第1圖、第2圖所示,在凹部13,配置直徑d2比孔10之直徑d1及穴11之直徑d3大的窗構件14。在圖示例,窗構件14係圓盤狀的形狀,由例如塑膠之使光透過的材料所構成。 Further, as shown in FIGS. 1 and 2, the window member 14 having a diameter d2 larger than the diameter d1 of the hole 10 and the diameter d3 of the hole 11 is disposed in the recess portion 13. In the illustrated example, the window member 14 has a disk-like shape and is made of, for example, a plastic material that transmits light.
又,在本例,窗構件14之直徑d2係與凹部13及孔10所構成之空洞部分的直徑相同,窗構件14係在其徑向恰好嵌入凹部13。 Further, in this example, the diameter d2 of the window member 14 is the same as the diameter of the hollow portion formed by the recess 13 and the hole 10, and the window member 14 is fitted into the recess 13 in the radial direction thereof.
進而,窗構件14係經由黏著層15,固接於藉設置於上平台2之凹部13所劃分的上側面16。 Further, the window member 14 is fixed to the upper side surface 16 defined by the recess 13 provided in the upper deck 2 via the adhesive layer 15.
在圖示例,凹部13之高度h與窗構件14之厚度t1和黏著層15之厚度t2的和相等,成為藉該窗構件14(之一部分)及黏著層15恰好埋入凹部13的構成。因此,在本實施形態,成為窗構件14的端部被載置於研磨墊7之上的構成。 In the example of the drawing, the height h of the concave portion 13 is equal to the sum of the thickness t1 of the window member 14 and the thickness t2 of the adhesive layer 15, and the configuration is such that the window member 14 (a part) and the adhesive layer 15 are buried in the concave portion 13. Therefore, in the present embodiment, the end portion of the window member 14 is placed on the polishing pad 7.
此外,在本發明,亦可凹部13之高度h係比窗構件14之厚度t1與黏著層15之厚度t2的和大,此情況成為在研磨墊7與窗構件14之間產生間隙的構成。 Further, in the present invention, the height h of the concave portion 13 may be larger than the sum of the thickness t1 of the window member 14 and the thickness t2 of the adhesive layer 15, and this may cause a gap to be formed between the polishing pad 7 and the window member 14.
在此,黏著層15只要是可使窗構件14固接於上側面16者即可,無特別限定,例如可使用雙面膠帶等。 Here, the adhesive layer 15 is not particularly limited as long as the window member 14 can be fixed to the upper side surface 16 , and for example, a double-sided tape or the like can be used.
以下,說明本實施形態之工件之兩面研磨裝置的作用效果。 Hereinafter, the operation and effect of the double-side polishing apparatus for a workpiece according to the present embodiment will be described.
若依據本實施形態之工件的兩面研磨裝置1,首先,因為將孔10設置於上平台2,並將穴11設置於研磨墊7,所以在工件W之兩面研磨中,藉工件厚度計12,可經由使光從孔10及穴11透過的窗構件14,即時測量工件W的厚度。 According to the double-side lapping apparatus 1 of the workpiece according to the present embodiment, first, since the hole 10 is provided in the upper stage 2 and the hole 11 is placed in the polishing pad 7, the workpiece thickness meter 12 is used in the grinding of both surfaces of the workpiece W, The thickness of the workpiece W can be measured instantaneously via the window member 14 that transmits light from the holes 10 and the holes 11.
而且,在本實施形態之工件的兩面研磨裝置1,將直徑d2比孔10之直徑d1及穴11之直徑d3大的窗構件14配置於凹部13,因為黏著層15係隔著該直徑d2之大的窗構件14位於與研磨面係相反側,所以成為在研磨中藉窗構件14阻止研磨液進入至黏著層15的構造,黏著層15與研磨液不會接觸,因此,不必擔心黏著層15之對研磨液的溶出或黏著力之降低所造成之窗構件14的剝離等。 Further, in the double-side polishing apparatus 1 of the workpiece according to the present embodiment, the window member 14 having a diameter d2 larger than the diameter d1 of the hole 10 and the diameter d3 of the hole 11 is disposed in the concave portion 13, because the adhesive layer 15 is separated by the diameter d2. Since the large window member 14 is located on the opposite side to the polishing surface, the window member 14 prevents the polishing liquid from entering the adhesive layer 15 during polishing, and the adhesive layer 15 does not come into contact with the polishing liquid, so that the adhesive layer 15 does not have to be feared. The peeling of the window member 14 caused by the dissolution or adhesion of the polishing liquid.
進而,因為凹部13係在藉孔10所劃分之上平台2之側壁2a的底部2b所設置,成為將直徑d2之大的窗構件14配置於 該凹部13的構造,所以亦防止側壁2a與研磨液的接觸,亦不必擔心研磨液固接於藉孔10所劃分之側壁2a。 Further, since the concave portion 13 is provided at the bottom portion 2b of the side wall 2a of the platform 2 which is partitioned by the hole 10, the window member 14 having the large diameter d2 is disposed. The configuration of the recessed portion 13 also prevents the side wall 2a from coming into contact with the polishing liquid, and there is no fear that the polishing liquid is fixed to the side wall 2a defined by the borrowing hole 10.
又,因為窗構件14之直徑d2係比穴11之直徑d3大,即使窗構件14剝離,窗構件14亦仍然被載置於研磨墊7之上,窗構件14不會與工件W接觸,而不必擔心污染或弄傷工件W。 Further, since the diameter d2 of the window member 14 is larger than the diameter d3 of the hole 11, even if the window member 14 is peeled off, the window member 14 is still placed on the polishing pad 7, and the window member 14 does not come into contact with the workpiece W, and There is no need to worry about contamination or injury to the workpiece W.
尤其,在本實施形態,因為將各元件之尺寸決定成窗構件14(之一部分)及黏著層15恰好埋入凹部13,所以對於重大或研磨中之離心力等亦由周圍之構成元件支撐窗構件14,而穩定,更抑制黏著層15的剝離。 In particular, in the present embodiment, since the size of each element is determined such that the window member 14 (one part) and the adhesive layer 15 are buried in the concave portion 13, the window member is supported by the surrounding constituent elements for the centrifugal force or the like during the polishing or the like. 14. It is stable and more inhibits the peeling of the adhesive layer 15.
依此方式,若依據本實施形態之工件的兩面研磨裝置1,可即時測量工件W的厚度,而且可防止工件W受到污染或受損,而可提供高品質的晶圓。 In this manner, according to the two-side polishing apparatus 1 of the workpiece according to the present embodiment, the thickness of the workpiece W can be measured instantaneously, and the workpiece W can be prevented from being contaminated or damaged, and a high-quality wafer can be provided.
在此,在本發明,如上述所示,窗構件14之直徑d2係和凹部13與孔10所構成之空洞部分的直徑相等較佳。這是由於藉由無間隙地配置窗構件14,可更加抑制研磨液與黏著層15及側壁2a的接觸,又,更穩定地固定窗構件14。 Here, in the present invention, as described above, the diameter d2 of the window member 14 and the diameter of the hollow portion formed by the recess 13 and the hole 10 are preferably equal. This is because the window member 14 is disposed without a gap, and the contact between the polishing liquid and the adhesive layer 15 and the side wall 2a can be further suppressed, and the window member 14 can be more stably fixed.
又,在本發明,如第2圖所示,凹部13之高度h係與窗構件14之厚度t1和黏著層15之厚度t2的和相等較佳。這是由於藉由無間隙地配置窗構件14,可作成研磨液亦不會與藉凹部13所劃分之旋轉平台4的側壁接觸,又,藉由窗構件14與研磨墊7接觸,更穩定地固定窗構件14。 Further, in the present invention, as shown in Fig. 2, the height h of the concave portion 13 is preferably equal to the sum of the thickness t1 of the window member 14 and the thickness t2 of the adhesive layer 15. This is because the window member 14 is disposed without a gap, so that the polishing liquid does not come into contact with the side wall of the rotating platform 4 which is divided by the recessed portion 13, and the window member 14 is in contact with the polishing pad 7 to be more stably The window member 14 is fixed.
在此,孔10之直徑d1及穴11之直徑d3係只要確保經由該孔10及穴11可藉工件厚度計12測量工件W的厚度即可。尤其,在設置複數個孔10及穴11的情況,為了避免 研磨速率之降低,採用可藉工件厚度計12測量工件W的厚度之最低限的大小較佳。 Here, the diameter d1 of the hole 10 and the diameter d3 of the hole 11 are only required to ensure that the thickness of the workpiece W can be measured by the workpiece thickness gauge 12 via the hole 10 and the hole 11. In particular, in the case of setting a plurality of holes 10 and holes 11, in order to avoid The reduction in the polishing rate is preferably carried out by measuring the minimum thickness of the workpiece W by the workpiece thickness gauge 12.
此外,孔10之直徑d1與穴11之直徑d3係採用相同的大小較佳,但是亦可採用相異的大小,在此情況,使穴11之直徑d3比孔10之直徑d1大或小都可。 Further, the diameter d1 of the hole 10 and the diameter d3 of the hole 11 are preferably the same size, but different sizes may be used, in which case the diameter d3 of the hole 11 is larger or smaller than the diameter d1 of the hole 10. can.
又,窗構件之直徑d2係如上述所示,比孔10之直徑d1及穴11之直徑d3大,但是具體而言,無特別限定,例如,使直徑d2比直徑d1及直徑d3大2mm以上,這在確保黏著層15的寬度並使窗構件14易固接於上側面16上較佳。 Further, the diameter d2 of the window member is larger than the diameter d1 of the hole 10 and the diameter d3 of the hole 11 as described above, but is not particularly limited, and for example, the diameter d2 is larger than the diameter d1 and the diameter d3 by 2 mm or more. This is preferable in ensuring the width of the adhesive layer 15 and allowing the window member 14 to be easily attached to the upper side 16.
以上,說明了本發明之實施形態,本發明係絲毫未限定為上述之實施形態。例如,在上述之實施形態,將孔10設置於上平台2,並將穴11設置於在上平台2所黏貼之研磨墊7,但是亦可將孔10設置於下平台3,並將穴11設置於在下平台3所黏貼之研磨墊7。 The embodiment of the present invention has been described above, and the present invention is not limited to the above embodiment. For example, in the above embodiment, the hole 10 is provided in the upper stage 2, and the hole 11 is placed on the polishing pad 7 adhered to the upper stage 2, but the hole 10 may be placed on the lower stage 3, and the hole 11 may be provided. It is disposed on the polishing pad 7 adhered to the lower platform 3.
此情況係只要將凹部13設置於上平台2之側壁2a的頂部,將直徑比孔10之直徑及穴11之直徑大的窗構件14配置於凹部13,並經由黏著層15將窗構件14固接於藉設置於下平台3之凹部13所劃分的下側面即可。 In this case, the recessed portion 13 is disposed at the top of the side wall 2a of the upper deck 2, and the window member 14 having a diameter larger than the diameter of the hole 10 and the diameter of the pocket 11 is disposed in the recess 13 and the window member 14 is fixed via the adhesive layer 15. It may be connected to the lower side defined by the recess 13 provided in the lower platform 3.
又,在本發明,孔10係設置僅一個,但是亦可作成設置2個以上的孔10,並測量工件W之在各種位置(例如中央部與外周部)之工件W的厚度。在此情況,例如可將工件厚度計12設置於對應於各孔10的位置。此外,可實施各種的變形。 Further, in the present invention, only one hole 10 is provided, but two or more holes 10 may be provided, and the thickness of the workpiece W of the workpiece W at various positions (for example, the center portion and the outer peripheral portion) may be measured. In this case, for example, the workpiece thickness gauge 12 can be disposed at a position corresponding to each of the holes 10. In addition, various modifications can be implemented.
2‧‧‧上平台 2‧‧‧Upper platform
2a‧‧‧側壁 2a‧‧‧ Sidewall
2b‧‧‧底部 2b‧‧‧ bottom
7‧‧‧研磨墊 7‧‧‧ polishing pad
d1、d2、d3‧‧‧直徑 D1, d2, d3‧‧‧ diameter
10‧‧‧孔 10‧‧‧ hole
11‧‧‧穴 11‧‧‧ points
13‧‧‧凹部 13‧‧‧ recess
14‧‧‧窗構件 14‧‧‧Window components
15‧‧‧黏著層 15‧‧‧Adhesive layer
16‧‧‧上側面 16‧‧‧Upper side
h‧‧‧高度 H‧‧‧height
t1、t2‧‧‧厚度 T1, t2‧‧‧ thickness
W‧‧‧工件 W‧‧‧Workpiece
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JP2013270033A JP6255991B2 (en) | 2013-12-26 | 2013-12-26 | Double-side polishing machine for workpieces |
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TWI615240B TWI615240B (en) | 2018-02-21 |
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CN (1) | CN106061681B (en) |
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TWI707742B (en) * | 2016-05-24 | 2020-10-21 | 日商創技股份有限公司 | Window structure for measuring thickness of workpiece |
TWI709457B (en) * | 2016-03-08 | 2020-11-11 | 日商快遞股份有限公司 | Surface polishing apparatus and carrier |
TWI743650B (en) * | 2019-03-22 | 2021-10-21 | 日商Sumco股份有限公司 | Double-side polishing method for workpiece and double-side polishing device for workpiece |
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DE102016116012A1 (en) * | 2016-08-29 | 2018-03-01 | Lapmaster Wolters Gmbh | Method for measuring the thickness of flat workpieces |
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JP6451825B1 (en) * | 2017-12-25 | 2019-01-16 | 株式会社Sumco | Wafer double-side polishing method |
JP7435113B2 (en) * | 2020-03-23 | 2024-02-21 | 株式会社Sumco | Double-sided polishing device for workpieces |
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TWI709457B (en) * | 2016-03-08 | 2020-11-11 | 日商快遞股份有限公司 | Surface polishing apparatus and carrier |
TWI707742B (en) * | 2016-05-24 | 2020-10-21 | 日商創技股份有限公司 | Window structure for measuring thickness of workpiece |
TWI743650B (en) * | 2019-03-22 | 2021-10-21 | 日商Sumco股份有限公司 | Double-side polishing method for workpiece and double-side polishing device for workpiece |
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TWI615240B (en) | 2018-02-21 |
JP2015123545A (en) | 2015-07-06 |
CN106061681B (en) | 2019-07-12 |
CN106061681A (en) | 2016-10-26 |
WO2015097947A1 (en) | 2015-07-02 |
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