KR102476609B1 - 연마방법 및 연마장치 - Google Patents
연마방법 및 연마장치 Download PDFInfo
- Publication number
- KR102476609B1 KR102476609B1 KR1020180065801A KR20180065801A KR102476609B1 KR 102476609 B1 KR102476609 B1 KR 102476609B1 KR 1020180065801 A KR1020180065801 A KR 1020180065801A KR 20180065801 A KR20180065801 A KR 20180065801A KR 102476609 B1 KR102476609 B1 KR 102476609B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- holding
- holding plate
- polishing head
- plate
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 228
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000004744 fabric Substances 0.000 claims abstract description 12
- 238000005259 measurement Methods 0.000 claims abstract description 11
- 238000007517 polishing process Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 210000000988 bone and bone Anatomy 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017115077A JP6312229B1 (ja) | 2017-06-12 | 2017-06-12 | 研磨方法及び研磨装置 |
JPJP-P-2017-115077 | 2017-06-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180135412A KR20180135412A (ko) | 2018-12-20 |
KR102476609B1 true KR102476609B1 (ko) | 2022-12-12 |
Family
ID=61968269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020180065801A KR102476609B1 (ko) | 2017-06-12 | 2018-06-08 | 연마방법 및 연마장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6312229B1 (zh) |
KR (1) | KR102476609B1 (zh) |
CN (1) | CN109015115B (zh) |
TW (1) | TWI763844B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7363978B1 (ja) | 2022-07-04 | 2023-10-18 | 株式会社Sumco | ウェーハ研磨条件の決定方法、ウェーハの製造方法およびウェーハ片面研磨システム |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222784A (ja) | 2001-01-24 | 2002-08-09 | Toshiba Mach Co Ltd | 平面研磨方法及び平面研磨装置 |
JP2004239718A (ja) | 2003-02-05 | 2004-08-26 | Shin Etsu Handotai Co Ltd | バッキングパッドの形状測定方法及び被加工物の研磨方法、並びにバッキングパッドの形状測定装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4313284A (en) * | 1980-03-27 | 1982-02-02 | Monsanto Company | Apparatus for improving flatness of polished wafers |
JP2535943B2 (ja) * | 1987-08-31 | 1996-09-18 | 大同特殊鋼株式会社 | 自動車トンネルの排ガス除塵装置 |
JP2560611B2 (ja) | 1993-07-26 | 1996-12-04 | 日本電気株式会社 | 保護膜およびその製造方法 |
JPH0740231A (ja) * | 1993-07-30 | 1995-02-10 | Sumitomo Sitix Corp | 半導体ウェーハの研磨方法および研磨装置 |
JPH07307317A (ja) * | 1994-05-16 | 1995-11-21 | Nippon Steel Corp | 半導体ウェーハ研磨装置 |
JPH07314327A (ja) * | 1994-05-20 | 1995-12-05 | Sony Corp | ウエハ研磨装置およびその方法 |
TW400567B (en) * | 1995-04-10 | 2000-08-01 | Matsushita Electric Ind Co Ltd | The polishing device and its polishing method for the substrate |
JPH09193003A (ja) * | 1996-01-16 | 1997-07-29 | Nippon Steel Corp | 研磨装置 |
JPH1058315A (ja) * | 1996-08-20 | 1998-03-03 | Sony Corp | 研磨装置及び研磨方法 |
JP4033632B2 (ja) * | 1999-02-02 | 2008-01-16 | 株式会社荏原製作所 | 基板把持装置及び研磨装置 |
JP3926565B2 (ja) * | 1999-03-19 | 2007-06-06 | 富士通株式会社 | 研磨装置、研磨方法及び磁気ヘッドの製造方法 |
DE60128768T2 (de) * | 2000-01-31 | 2007-10-11 | Shin-Etsu Handotai Co., Ltd. | Polierverfahren und vorrichtung |
JP2003260644A (ja) * | 2002-03-07 | 2003-09-16 | Asahi Glass Co Ltd | 板状体の加工方法および加工装置 |
WO2004087371A1 (ja) * | 2003-03-31 | 2004-10-14 | Fujitsu Limited | 加工方法及び装置 |
JP2005332982A (ja) * | 2004-05-20 | 2005-12-02 | Renesas Technology Corp | 半導体装置の製造方法 |
JP5001877B2 (ja) * | 2008-02-26 | 2012-08-15 | 株式会社ディスコ | 板状物搬送装置および板状物搬送方法 |
JP2010056366A (ja) * | 2008-08-29 | 2010-03-11 | Showa Denko Kk | ウェーハの研削装置及び半導体発光素子の製造方法 |
JP2013004928A (ja) * | 2011-06-21 | 2013-01-07 | Shin Etsu Handotai Co Ltd | 研磨ヘッド、研磨装置及びワークの研磨方法 |
JP2014053356A (ja) * | 2012-09-05 | 2014-03-20 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5870960B2 (ja) * | 2013-05-16 | 2016-03-01 | 信越半導体株式会社 | ワークの研磨装置 |
-
2017
- 2017-06-12 JP JP2017115077A patent/JP6312229B1/ja active Active
-
2018
- 2018-05-14 TW TW107116217A patent/TWI763844B/zh active
- 2018-05-25 CN CN201810514993.2A patent/CN109015115B/zh active Active
- 2018-06-08 KR KR1020180065801A patent/KR102476609B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222784A (ja) | 2001-01-24 | 2002-08-09 | Toshiba Mach Co Ltd | 平面研磨方法及び平面研磨装置 |
JP2004239718A (ja) | 2003-02-05 | 2004-08-26 | Shin Etsu Handotai Co Ltd | バッキングパッドの形状測定方法及び被加工物の研磨方法、並びにバッキングパッドの形状測定装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201902618A (zh) | 2019-01-16 |
CN109015115B (zh) | 2021-08-31 |
JP2019000917A (ja) | 2019-01-10 |
JP6312229B1 (ja) | 2018-04-18 |
TWI763844B (zh) | 2022-05-11 |
CN109015115A (zh) | 2018-12-18 |
KR20180135412A (ko) | 2018-12-20 |
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