KR102436241B1 - 기판 처리 방법 및 열처리 장치 - Google Patents

기판 처리 방법 및 열처리 장치 Download PDF

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Publication number
KR102436241B1
KR102436241B1 KR1020170164141A KR20170164141A KR102436241B1 KR 102436241 B1 KR102436241 B1 KR 102436241B1 KR 1020170164141 A KR1020170164141 A KR 1020170164141A KR 20170164141 A KR20170164141 A KR 20170164141A KR 102436241 B1 KR102436241 B1 KR 102436241B1
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processing chamber
heat treatment
unit
exhaust
metal
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KR20180065914A (ko
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요헤이 사노
신이치로 카와카미
마사시 에노모토
타카히로 시오자와
게이스케 요시다
토모야 오니츠카
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도쿄엘렉트론가부시키가이샤
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    • H01L21/324—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H01L21/027—
    • H01L21/67017—
    • H01L21/67103—
    • H01L21/67772—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020170164141A 2016-12-08 2017-12-01 기판 처리 방법 및 열처리 장치 Active KR102436241B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220103350A KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016238138A JP6781031B2 (ja) 2016-12-08 2016-12-08 基板処理方法及び熱処理装置
JPJP-P-2016-238138 2016-12-08

Related Child Applications (1)

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KR1020220103350A Division KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치

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KR20180065914A KR20180065914A (ko) 2018-06-18
KR102436241B1 true KR102436241B1 (ko) 2022-08-25

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KR1020170164141A Active KR102436241B1 (ko) 2016-12-08 2017-12-01 기판 처리 방법 및 열처리 장치
KR1020220103350A Active KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치
KR1020240004993A Active KR102753390B1 (ko) 2016-12-08 2024-01-11 열처리 방법 및 열처리 장치
KR1020240202558A Pending KR20250006804A (ko) 2016-12-08 2024-12-31 기판 처리 방법 및 기판 처리 시스템

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KR1020220103350A Active KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치
KR1020240004993A Active KR102753390B1 (ko) 2016-12-08 2024-01-11 열처리 방법 및 열처리 장치
KR1020240202558A Pending KR20250006804A (ko) 2016-12-08 2024-12-31 기판 처리 방법 및 기판 처리 시스템

Country Status (5)

Country Link
US (1) US10656526B2 (https=)
JP (1) JP6781031B2 (https=)
KR (4) KR102436241B1 (https=)
CN (2) CN108183068B (https=)
TW (2) TWI746716B (https=)

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KR102750860B1 (ko) * 2018-08-30 2025-01-09 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
JP7129309B2 (ja) * 2018-10-16 2022-09-01 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
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JP2016530565A (ja) * 2013-08-22 2016-09-29 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物

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