JP6781031B2 - 基板処理方法及び熱処理装置 - Google Patents

基板処理方法及び熱処理装置 Download PDF

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Publication number
JP6781031B2
JP6781031B2 JP2016238138A JP2016238138A JP6781031B2 JP 6781031 B2 JP6781031 B2 JP 6781031B2 JP 2016238138 A JP2016238138 A JP 2016238138A JP 2016238138 A JP2016238138 A JP 2016238138A JP 6781031 B2 JP6781031 B2 JP 6781031B2
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processing chamber
heat treatment
water
outer peripheral
substrate
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English (en)
Japanese (ja)
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JP2018098229A (ja
JP2018098229A5 (https=
Inventor
要平 佐野
要平 佐野
真一路 川上
真一路 川上
正志 榎本
正志 榎本
崇博 塩澤
崇博 塩澤
圭佑 吉田
圭佑 吉田
智也 鬼塚
智也 鬼塚
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2016238138A priority Critical patent/JP6781031B2/ja
Priority to US15/823,661 priority patent/US10656526B2/en
Priority to KR1020170164141A priority patent/KR102436241B1/ko
Priority to TW106142318A priority patent/TWI746716B/zh
Priority to TW110137697A priority patent/TWI789048B/zh
Priority to CN201711293037.8A priority patent/CN108183068B/zh
Priority to CN202310487865.4A priority patent/CN116469755A/zh
Publication of JP2018098229A publication Critical patent/JP2018098229A/ja
Publication of JP2018098229A5 publication Critical patent/JP2018098229A5/ja
Priority to JP2020173830A priority patent/JP6955073B2/ja
Publication of JP6781031B2 publication Critical patent/JP6781031B2/ja
Application granted granted Critical
Priority to KR1020220103350A priority patent/KR102640367B1/ko
Priority to KR1020240004993A priority patent/KR102753390B1/ko
Priority to KR1020240202558A priority patent/KR20250006804A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2016238138A 2016-12-08 2016-12-08 基板処理方法及び熱処理装置 Active JP6781031B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2016238138A JP6781031B2 (ja) 2016-12-08 2016-12-08 基板処理方法及び熱処理装置
US15/823,661 US10656526B2 (en) 2016-12-08 2017-11-28 Substrate treatment method and thermal treatment apparatus
KR1020170164141A KR102436241B1 (ko) 2016-12-08 2017-12-01 기판 처리 방법 및 열처리 장치
TW106142318A TWI746716B (zh) 2016-12-08 2017-12-04 基板處理方法及熱處理裝置
TW110137697A TWI789048B (zh) 2016-12-08 2017-12-04 基板處理方法、基板處理系統及電腦可讀取記憶媒體
CN202310487865.4A CN116469755A (zh) 2016-12-08 2017-12-08 基片处理方法和热处理装置
CN201711293037.8A CN108183068B (zh) 2016-12-08 2017-12-08 基片处理方法和热处理装置
JP2020173830A JP6955073B2 (ja) 2016-12-08 2020-10-15 熱処理方法及び熱処理装置
KR1020220103350A KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치
KR1020240004993A KR102753390B1 (ko) 2016-12-08 2024-01-11 열처리 방법 및 열처리 장치
KR1020240202558A KR20250006804A (ko) 2016-12-08 2024-12-31 기판 처리 방법 및 기판 처리 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016238138A JP6781031B2 (ja) 2016-12-08 2016-12-08 基板処理方法及び熱処理装置

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JP2020173830A Division JP6955073B2 (ja) 2016-12-08 2020-10-15 熱処理方法及び熱処理装置

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JP2018098229A JP2018098229A (ja) 2018-06-21
JP2018098229A5 JP2018098229A5 (https=) 2019-11-14
JP6781031B2 true JP6781031B2 (ja) 2020-11-04

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US (1) US10656526B2 (https=)
JP (1) JP6781031B2 (https=)
KR (4) KR102436241B1 (https=)
CN (2) CN108183068B (https=)
TW (2) TWI746716B (https=)

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Publication number Publication date
CN108183068A (zh) 2018-06-19
KR20220119346A (ko) 2022-08-29
KR102753390B1 (ko) 2025-01-10
TW202205498A (zh) 2022-02-01
KR102640367B1 (ko) 2024-02-23
TW201832305A (zh) 2018-09-01
US10656526B2 (en) 2020-05-19
JP2018098229A (ja) 2018-06-21
US20180164689A1 (en) 2018-06-14
CN108183068B (zh) 2023-05-23
KR20180065914A (ko) 2018-06-18
KR20250006804A (ko) 2025-01-13
TWI746716B (zh) 2021-11-21
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