KR102434320B1 - 전력 효율적 전압 레벨 변환기 회로 - Google Patents

전력 효율적 전압 레벨 변환기 회로 Download PDF

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Publication number
KR102434320B1
KR102434320B1 KR1020187028210A KR20187028210A KR102434320B1 KR 102434320 B1 KR102434320 B1 KR 102434320B1 KR 1020187028210 A KR1020187028210 A KR 1020187028210A KR 20187028210 A KR20187028210 A KR 20187028210A KR 102434320 B1 KR102434320 B1 KR 102434320B1
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South Korea
Prior art keywords
voltage
level converter
voltage level
bypass
bypass mode
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Korean (ko)
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KR20180124894A (ko
Inventor
라훌 크리쉬나쿠마르 나드카르니
안토니 주니어 코레알레
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/3296—Power saving characterised by the action undertaken by lowering the supply or operating voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/35613—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit the input circuit having a differential configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Manipulation Of Pulses (AREA)
KR1020187028210A 2016-03-31 2017-03-10 전력 효율적 전압 레벨 변환기 회로 Active KR102434320B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/087,812 US11223359B2 (en) 2016-03-31 2016-03-31 Power efficient voltage level translator circuit
US15/087,812 2016-03-31
PCT/US2017/021935 WO2017172329A1 (en) 2016-03-31 2017-03-10 Power efficient voltage level translator circuit

Publications (2)

Publication Number Publication Date
KR20180124894A KR20180124894A (ko) 2018-11-21
KR102434320B1 true KR102434320B1 (ko) 2022-08-18

Family

ID=58428362

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187028210A Active KR102434320B1 (ko) 2016-03-31 2017-03-10 전력 효율적 전압 레벨 변환기 회로

Country Status (7)

Country Link
US (1) US11223359B2 (enExample)
EP (1) EP3437192B1 (enExample)
JP (1) JP6862470B2 (enExample)
KR (1) KR102434320B1 (enExample)
CN (1) CN108886355B (enExample)
BR (1) BR112018069953B1 (enExample)
WO (1) WO2017172329A1 (enExample)

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* Cited by examiner, † Cited by third party
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US10535386B2 (en) 2017-05-23 2020-01-14 Arm Limited Level shifter with bypass
US10574236B2 (en) * 2017-08-21 2020-02-25 Arm Limited Level shifter with bypass control
US10622975B2 (en) * 2018-06-11 2020-04-14 Semiconductor Components Industries, Llc Voltage translator using low voltage power supply
JP7494071B2 (ja) * 2020-09-23 2024-06-03 キオクシア株式会社 メモリシステム
US11764784B2 (en) * 2021-07-07 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including a level shifter and method of mitigating a delay between input and output signals
CN119182392A (zh) * 2023-06-21 2024-12-24 澜起电子科技(上海)有限公司 输出驱动电路、时钟芯片及电子设备

Citations (4)

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JP2001036398A (ja) 1999-07-16 2001-02-09 Matsushita Electric Ind Co Ltd レベルシフタ回路
US20030179032A1 (en) 2002-03-25 2003-09-25 Tomohiro Kaneko Level shifter circuit and semiconductor device including the same
JP2005117628A (ja) 2003-10-10 2005-04-28 Arm Ltd データ処理装置におけるレベル・シフト
US20050122820A1 (en) 2003-12-05 2005-06-09 Jong-Hyun Choi Semiconductor devices including an external power voltage control function and methods of operating the same

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JP3866111B2 (ja) 2002-01-18 2007-01-10 株式会社ルネサステクノロジ 半導体集積回路及びバーンイン方法
JP4075823B2 (ja) 2004-02-25 2008-04-16 株式会社デンソー コンパレータ回路装置
US20050270065A1 (en) 2004-06-03 2005-12-08 Dipankar Bhattacharya Coms buffer having higher and lower voltage operation
US7145364B2 (en) * 2005-02-25 2006-12-05 Agere Systems Inc. Self-bypassing voltage level translator circuit
JP2007228330A (ja) 2006-02-24 2007-09-06 Seiko Epson Corp レベルシフタ回路及びそれを具備する半導体集積回路
JP2007306042A (ja) 2006-05-08 2007-11-22 Sony Corp レベル変換回路及びこれを用いた入出力装置
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JP4260176B2 (ja) 2006-08-31 2009-04-30 株式会社沖データ レベルシフト回路、駆動装置、ｌｅｄヘッド及び画像形成装置
KR100856128B1 (ko) 2007-02-12 2008-09-03 삼성전자주식회사 고속 동작이 가능한 레벨 쉬프터 및 그 방법
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JP2001036398A (ja) 1999-07-16 2001-02-09 Matsushita Electric Ind Co Ltd レベルシフタ回路
US20030179032A1 (en) 2002-03-25 2003-09-25 Tomohiro Kaneko Level shifter circuit and semiconductor device including the same
JP2005117628A (ja) 2003-10-10 2005-04-28 Arm Ltd データ処理装置におけるレベル・シフト
US20050122820A1 (en) 2003-12-05 2005-06-09 Jong-Hyun Choi Semiconductor devices including an external power voltage control function and methods of operating the same

Also Published As

Publication number Publication date
WO2017172329A1 (en) 2017-10-05
BR112018069953A2 (pt) 2019-02-05
KR20180124894A (ko) 2018-11-21
EP3437192B1 (en) 2024-06-12
BR112018069953B1 (pt) 2024-03-05
CN108886355A (zh) 2018-11-23
JP6862470B2 (ja) 2021-04-21
US20170288673A1 (en) 2017-10-05
EP3437192A1 (en) 2019-02-06
US11223359B2 (en) 2022-01-11
JP2019516280A (ja) 2019-06-13
CN108886355B (zh) 2022-03-29

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