CN108886355B - 高效功率电压电平转换器电路 - Google Patents

高效功率电压电平转换器电路 Download PDF

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Publication number
CN108886355B
CN108886355B CN201780018467.0A CN201780018467A CN108886355B CN 108886355 B CN108886355 B CN 108886355B CN 201780018467 A CN201780018467 A CN 201780018467A CN 108886355 B CN108886355 B CN 108886355B
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China
Prior art keywords
voltage
voltage level
bypass
pull
domain
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CN201780018467.0A
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English (en)
Chinese (zh)
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CN108886355A (zh
Inventor
R·K·纳德卡尔尼
A·科雷亚莱二世
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/3296—Power saving characterised by the action undertaken by lowering the supply or operating voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/35613—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit the input circuit having a differential configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Manipulation Of Pulses (AREA)
CN201780018467.0A 2016-03-31 2017-03-10 高效功率电压电平转换器电路 Active CN108886355B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/087,812 US11223359B2 (en) 2016-03-31 2016-03-31 Power efficient voltage level translator circuit
US15/087,812 2016-03-31
PCT/US2017/021935 WO2017172329A1 (en) 2016-03-31 2017-03-10 Power efficient voltage level translator circuit

Publications (2)

Publication Number Publication Date
CN108886355A CN108886355A (zh) 2018-11-23
CN108886355B true CN108886355B (zh) 2022-03-29

Family

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Application Number Title Priority Date Filing Date
CN201780018467.0A Active CN108886355B (zh) 2016-03-31 2017-03-10 高效功率电压电平转换器电路

Country Status (7)

Country Link
US (1) US11223359B2 (enExample)
EP (1) EP3437192B1 (enExample)
JP (1) JP6862470B2 (enExample)
KR (1) KR102434320B1 (enExample)
CN (1) CN108886355B (enExample)
BR (1) BR112018069953B1 (enExample)
WO (1) WO2017172329A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535386B2 (en) 2017-05-23 2020-01-14 Arm Limited Level shifter with bypass
US10574236B2 (en) * 2017-08-21 2020-02-25 Arm Limited Level shifter with bypass control
US10622975B2 (en) * 2018-06-11 2020-04-14 Semiconductor Components Industries, Llc Voltage translator using low voltage power supply
JP7494071B2 (ja) * 2020-09-23 2024-06-03 キオクシア株式会社 メモリシステム
US11764784B2 (en) * 2021-07-07 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including a level shifter and method of mitigating a delay between input and output signals
CN119182392A (zh) * 2023-06-21 2024-12-24 澜起电子科技(上海)有限公司 输出驱动电路、时钟芯片及电子设备

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CN102624373A (zh) * 2011-01-26 2012-08-01 飞思卡尔半导体公司 多功能功率域电平转换器

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JPH1184274A (ja) 1997-09-03 1999-03-26 Sumitomo Electric Ind Ltd 光スイッチ
JP3796034B2 (ja) 1997-12-26 2006-07-12 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路装置
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JP4075823B2 (ja) 2004-02-25 2008-04-16 株式会社デンソー コンパレータ回路装置
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CN102624373A (zh) * 2011-01-26 2012-08-01 飞思卡尔半导体公司 多功能功率域电平转换器

Also Published As

Publication number Publication date
WO2017172329A1 (en) 2017-10-05
BR112018069953A2 (pt) 2019-02-05
KR20180124894A (ko) 2018-11-21
EP3437192B1 (en) 2024-06-12
BR112018069953B1 (pt) 2024-03-05
CN108886355A (zh) 2018-11-23
JP6862470B2 (ja) 2021-04-21
US20170288673A1 (en) 2017-10-05
EP3437192A1 (en) 2019-02-06
US11223359B2 (en) 2022-01-11
JP2019516280A (ja) 2019-06-13
KR102434320B1 (ko) 2022-08-18

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