KR102402982B1 - 분할 스퍼터링 타깃 - Google Patents

분할 스퍼터링 타깃 Download PDF

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Publication number
KR102402982B1
KR102402982B1 KR1020197027915A KR20197027915A KR102402982B1 KR 102402982 B1 KR102402982 B1 KR 102402982B1 KR 1020197027915 A KR1020197027915 A KR 1020197027915A KR 20197027915 A KR20197027915 A KR 20197027915A KR 102402982 B1 KR102402982 B1 KR 102402982B1
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KR
South Korea
Prior art keywords
target
division
sputtering target
flat
flat surface
Prior art date
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KR1020197027915A
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English (en)
Korean (ko)
Other versions
KR20190131038A (ko
Inventor
마사히로 미와
히로에이 사사키
춘팅 린
신훼이 우
Original Assignee
미쓰이금속광업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰이금속광업주식회사 filed Critical 미쓰이금속광업주식회사
Publication of KR20190131038A publication Critical patent/KR20190131038A/ko
Application granted granted Critical
Publication of KR102402982B1 publication Critical patent/KR102402982B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020197027915A 2017-03-31 2017-10-27 분할 스퍼터링 타깃 KR102402982B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017072070 2017-03-31
JPJP-P-2017-072070 2017-03-31
PCT/JP2017/038946 WO2018179553A1 (ja) 2017-03-31 2017-10-27 分割スパッタリングターゲット

Publications (2)

Publication Number Publication Date
KR20190131038A KR20190131038A (ko) 2019-11-25
KR102402982B1 true KR102402982B1 (ko) 2022-05-27

Family

ID=63674634

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197027915A KR102402982B1 (ko) 2017-03-31 2017-10-27 분할 스퍼터링 타깃

Country Status (5)

Country Link
JP (1) JP6960989B2 (zh)
KR (1) KR102402982B1 (zh)
CN (1) CN110431252A (zh)
TW (1) TWI745483B (zh)
WO (1) WO2018179553A1 (zh)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08144052A (ja) * 1994-11-22 1996-06-04 Tosoh Corp Ｉｔｏスパッタリングターゲット
JP4470029B2 (ja) * 1999-06-01 2010-06-02 東ソー株式会社 分割ｉｔｏスパッタリングターゲット
JP4694104B2 (ja) 2003-04-18 2011-06-08 大日本印刷株式会社 スパッタリングターゲット
JP5228245B2 (ja) * 2007-08-31 2013-07-03 株式会社三井金属韓国 スパッタリングターゲット
JP2009127125A (ja) * 2007-11-28 2009-06-11 Mitsui Mining & Smelting Co Ltd スパッタリングターゲット材およびこれから得られるスパッタリングターゲット
WO2012063524A1 (ja) * 2010-11-08 2012-05-18 三井金属鉱業株式会社 分割スパッタリングターゲット及びその製造方法
WO2012063525A1 (ja) * 2010-11-08 2012-05-18 三井金属鉱業株式会社 分割スパッタリングターゲット及びその製造方法
CN103348035B (zh) * 2011-04-18 2015-08-12 吉坤日矿日石金属株式会社 溅射靶
TW201249600A (en) * 2011-06-08 2012-12-16 Thintech Materials Technology Co Ltd Processing method for silicon target surface
KR101920170B1 (ko) * 2014-07-03 2018-11-19 스미토모 긴조쿠 고잔 가부시키가이샤 스퍼터링용 타깃재와 그 제조 방법
JP5947413B1 (ja) * 2015-02-13 2016-07-06 Ｊｘ金属株式会社 スパッタリングターゲット及びその製造方法
CN105908137B (zh) * 2015-02-24 2020-12-15 Ｊｘ金属株式会社 溅射靶

Also Published As

Publication number Publication date
TW201837212A (zh) 2018-10-16
CN110431252A (zh) 2019-11-08
TWI745483B (zh) 2021-11-11
JP6960989B2 (ja) 2021-11-05
WO2018179553A1 (ja) 2018-10-04
KR20190131038A (ko) 2019-11-25
JPWO2018179553A1 (ja) 2020-02-13

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