KR102355112B1 - 촬상 장치 - Google Patents

촬상 장치 Download PDF

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KR102355112B1
KR102355112B1 KR1020140073423A KR20140073423A KR102355112B1 KR 102355112 B1 KR102355112 B1 KR 102355112B1 KR 1020140073423 A KR1020140073423 A KR 1020140073423A KR 20140073423 A KR20140073423 A KR 20140073423A KR 102355112 B1 KR102355112 B1 KR 102355112B1
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South Korea
Prior art keywords
film
transistor
oxide semiconductor
wiring
circuit
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Korean (ko)
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KR20140147713A (ko
Inventor
히로노부 다카하시
유키노리 시마
야수하루 호사카
도시미츠 오보나이
마사시 츠부쿠
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
KR1020140073423A 2013-06-19 2014-06-17 촬상 장치 Active KR102355112B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013128794 2013-06-19
JPJP-P-2013-128794 2013-06-19

Publications (2)

Publication Number Publication Date
KR20140147713A KR20140147713A (ko) 2014-12-30
KR102355112B1 true KR102355112B1 (ko) 2022-01-26

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US (1) US9035301B2 (enExample)
JP (1) JP6663635B2 (enExample)
KR (1) KR102355112B1 (enExample)

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US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
TWI635750B (zh) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 攝像裝置以及其工作方法
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TWI757788B (zh) 2014-06-27 2022-03-11 日商半導體能源研究所股份有限公司 攝像裝置及電子裝置
KR102334986B1 (ko) * 2014-12-09 2021-12-06 엘지디스플레이 주식회사 산화물 반도체층의 결정화 방법, 이를 적용한 반도체 장치 및 이의 제조 방법
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US9685476B2 (en) * 2015-04-03 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
WO2016167277A1 (ja) * 2015-04-17 2016-10-20 シャープ株式会社 撮像パネル、及びそれを備えたｘ線撮像装置
CN104916703B (zh) * 2015-05-07 2018-07-31 京东方科技集团股份有限公司 一种氧化物薄膜晶体管、阵列基板和显示装置
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR102698685B1 (ko) * 2015-09-10 2024-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법
JP2018032839A (ja) * 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
WO2017178912A1 (en) * 2016-04-13 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
KR102075666B1 (ko) * 2018-01-04 2020-02-10 서강대학교 산학협력단 방사선 저항성 금속산화물 반도체 소재, 이의 선별방법 및 전자기기의 방사선 내구성 평가방법
JP2019220684A (ja) * 2018-06-19 2019-12-26 シャープ株式会社 放射線検出器
KR102240971B1 (ko) * 2018-07-10 2021-04-16 한국과학기술원 방사선에 의한 반도체 손상 방지 방법 및 장치
KR102245272B1 (ko) * 2019-04-16 2021-04-28 서강대학교 산학협력단 Zito를 함유하는 방사선 저항성 금속산화물 반도체 조성물 및 이의 제법 및 용도
WO2021072604A1 (zh) * 2019-10-14 2021-04-22 京东方科技集团股份有限公司 一种探测基板、其制作方法及平板探测器
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
CN111244119B (zh) * 2019-12-13 2024-09-10 京东方科技集团股份有限公司 一种探测基板、其制作方法及平板探测器

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