KR102344709B1 - 2차원 비아 필러 구조물들 - Google Patents

2차원 비아 필러 구조물들 Download PDF

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Publication number
KR102344709B1
KR102344709B1 KR1020200172600A KR20200172600A KR102344709B1 KR 102344709 B1 KR102344709 B1 KR 102344709B1 KR 1020200172600 A KR1020200172600 A KR 1020200172600A KR 20200172600 A KR20200172600 A KR 20200172600A KR 102344709 B1 KR102344709 B1 KR 102344709B1
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South Korea
Prior art keywords
segment
conductor
segments
interconnected
sculptural
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KR1020200172600A
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English (en)
Korean (ko)
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KR20200141971A (ko
Inventor
춘-야오 쿠
웬-하오 첸
밍-타오 유
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타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
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Priority claimed from US16/023,711 external-priority patent/US20190148290A1/en
Application filed by 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 filed Critical 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
Publication of KR20200141971A publication Critical patent/KR20200141971A/ko
Application granted granted Critical
Publication of KR102344709B1 publication Critical patent/KR102344709B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020200172600A 2017-11-15 2020-12-10 2차원 비아 필러 구조물들 KR102344709B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762586475P 2017-11-15 2017-11-15
US62/586,475 2017-11-15
US16/023,711 US20190148290A1 (en) 2017-11-15 2018-06-29 Two-Dimensional Via Pillar Structures
US16/023,711 2018-06-29
KR1020180137612A KR20190055748A (ko) 2017-11-15 2018-11-09 2차원 비아 필러 구조물들

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020180137612A Division KR20190055748A (ko) 2017-11-15 2018-11-09 2차원 비아 필러 구조물들

Publications (2)

Publication Number Publication Date
KR20200141971A KR20200141971A (ko) 2020-12-21
KR102344709B1 true KR102344709B1 (ko) 2021-12-31

Family

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Family Applications (1)

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KR1020200172600A KR102344709B1 (ko) 2017-11-15 2020-12-10 2차원 비아 필러 구조물들

Country Status (3)

Country Link
KR (1) KR102344709B1 (de)
CN (1) CN115377057A (de)
DE (1) DE102018125018A1 (de)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209979A (ja) 2004-01-26 2005-08-04 Sony Corp 半導体装置
JP2009252805A (ja) 2008-04-01 2009-10-29 Nec Electronics Corp 半導体集積回路、半導体集積回路のレイアウト方法およびレイアウトプログラム
US20110304994A1 (en) 2010-06-09 2011-12-15 Texas Instruments Incorporated Conductive via structures for routing porosity and low via resistance, and processes of making
US20130140711A1 (en) 2010-10-19 2013-06-06 Panasonic Corporation Semiconductor device
US20140332979A1 (en) 2013-05-03 2014-11-13 Blackcomb Design Automation Inc. Architecture of Spare Wiring Structures for Improved Engineering Change Orders
JP2016051875A (ja) 2014-09-02 2016-04-11 株式会社ソシオネクスト 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04363063A (ja) * 1991-10-04 1992-12-15 Toshiba Corp 半導体集積回路装置
JP4141881B2 (ja) * 2003-04-04 2008-08-27 シャープ株式会社 集積回路
KR20060020387A (ko) * 2004-08-31 2006-03-06 매그나칩 반도체 유한회사 광 집적도를 향상시킨 시모스 이미지센서의 제조방법
KR101005028B1 (ko) * 2005-12-27 2010-12-30 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치
US7944732B2 (en) * 2008-11-21 2011-05-17 Xilinx, Inc. Integrated capacitor with alternating layered segments
US8759893B2 (en) * 2011-09-07 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Horizontal interdigitated capacitor structure with vias
JP6429647B2 (ja) * 2015-01-26 2018-11-28 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209979A (ja) 2004-01-26 2005-08-04 Sony Corp 半導体装置
JP2009252805A (ja) 2008-04-01 2009-10-29 Nec Electronics Corp 半導体集積回路、半導体集積回路のレイアウト方法およびレイアウトプログラム
US20110304994A1 (en) 2010-06-09 2011-12-15 Texas Instruments Incorporated Conductive via structures for routing porosity and low via resistance, and processes of making
US20130140711A1 (en) 2010-10-19 2013-06-06 Panasonic Corporation Semiconductor device
US20140332979A1 (en) 2013-05-03 2014-11-13 Blackcomb Design Automation Inc. Architecture of Spare Wiring Structures for Improved Engineering Change Orders
JP2016051875A (ja) 2014-09-02 2016-04-11 株式会社ソシオネクスト 半導体装置

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Publication number Publication date
DE102018125018A1 (de) 2019-05-16
CN115377057A (zh) 2022-11-22
KR20200141971A (ko) 2020-12-21

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