KR102323389B1 - 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 - Google Patents

튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 Download PDF

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KR102323389B1
KR102323389B1 KR1020187028266A KR20187028266A KR102323389B1 KR 102323389 B1 KR102323389 B1 KR 102323389B1 KR 1020187028266 A KR1020187028266 A KR 1020187028266A KR 20187028266 A KR20187028266 A KR 20187028266A KR 102323389 B1 KR102323389 B1 KR 102323389B1
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silicon
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germanium
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KR20180112869A (ko
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숩하딥 칼
엔 타필리 칸다바라
애런 모스덴
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/30608—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020187028266A 2016-03-02 2017-03-02 튜닝가능한 선택도를 갖는 등방성 실리콘 및 실리콘-게르마늄 에칭 Active KR102323389B1 (ko)

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US201662302584P 2016-03-02 2016-03-02
US201662302587P 2016-03-02 2016-03-02
US62/302,584 2016-03-02
US62/302,587 2016-03-02
PCT/US2017/020503 WO2017151958A1 (en) 2016-03-02 2017-03-02 Isotropic silicon and silicon-germanium etching with tunable selectivity

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KR20180112869A KR20180112869A (ko) 2018-10-12
KR102323389B1 true KR102323389B1 (ko) 2021-11-05

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US (1) US9984890B2 (https=)
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WO (1) WO2017151958A1 (https=)

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JP7072440B2 (ja) * 2018-05-16 2022-05-20 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
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TW202125622A (zh) 2019-08-28 2021-07-01 美商得昇科技股份有限公司 使用氟自由基處理工件的方法
JP7345334B2 (ja) 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
US12165848B2 (en) 2019-10-29 2024-12-10 Tokyo Electron Limited Substrate processing method, substrate processing apparatus, and method for producing nanowire or nanosheet transistor
JP7653666B2 (ja) * 2020-03-10 2025-03-31 パナソニックＩｐマネジメント株式会社 電子部品のクリーニング方法および素子チップの製造方法
JP7360979B2 (ja) * 2020-03-19 2023-10-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11424120B2 (en) * 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques
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JP7771835B2 (ja) * 2021-05-31 2025-11-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7803047B2 (ja) * 2021-06-15 2026-01-21 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2022264380A1 (ja) * 2021-06-17 2022-12-22 株式会社日立ハイテク プラズマ処理方法および半導体装置の製造方法
FR3125915A1 (fr) * 2021-10-07 2023-02-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de gravure selective isotrope de silicium
US12272558B2 (en) * 2022-05-09 2025-04-08 Tokyo Electron Limited Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
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JP2019507505A (ja) 2019-03-14
TWI625785B (zh) 2018-06-01
TW201738955A (zh) 2017-11-01
KR20180112869A (ko) 2018-10-12
WO2017151958A1 (en) 2017-09-08
US20170271165A1 (en) 2017-09-21
JP6827633B2 (ja) 2021-02-10
US9984890B2 (en) 2018-05-29

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