JP6827633B2 - 等方性シリコン及びシリコンゲルマニウムの調整可能な選択性を備えたエッチング - Google Patents

等方性シリコン及びシリコンゲルマニウムの調整可能な選択性を備えたエッチング Download PDF

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JP6827633B2
JP6827633B2 JP2018546013A JP2018546013A JP6827633B2 JP 6827633 B2 JP6827633 B2 JP 6827633B2 JP 2018546013 A JP2018546013 A JP 2018546013A JP 2018546013 A JP2018546013 A JP 2018546013A JP 6827633 B2 JP6827633 B2 JP 6827633B2
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silicon
material layer
substrate
etching
substrate temperature
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JP2019507505A (ja
JP2019507505A5 (https=
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カル，スバディープ
エヌ．タピリー カンダバラ
エヌ．タピリー カンダバラ
モスデン，エラン
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2018546013A 2016-03-02 2017-03-02 等方性シリコン及びシリコンゲルマニウムの調整可能な選択性を備えたエッチング Active JP6827633B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662302584P 2016-03-02 2016-03-02
US201662302587P 2016-03-02 2016-03-02
US62/302,584 2016-03-02
US62/302,587 2016-03-02
PCT/US2017/020503 WO2017151958A1 (en) 2016-03-02 2017-03-02 Isotropic silicon and silicon-germanium etching with tunable selectivity

Publications (3)

Publication Number Publication Date
JP2019507505A JP2019507505A (ja) 2019-03-14
JP2019507505A5 JP2019507505A5 (https=) 2020-02-06
JP6827633B2 true JP6827633B2 (ja) 2021-02-10

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Country Link
US (1) US9984890B2 (https=)
JP (1) JP6827633B2 (https=)
KR (1) KR102323389B1 (https=)
TW (1) TWI625785B (https=)
WO (1) WO2017151958A1 (https=)

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US10685887B2 (en) * 2017-12-04 2020-06-16 Tokyo Electron Limited Method for incorporating multiple channel materials in a complimentary field effective transistor (CFET) device
US10714391B2 (en) * 2017-12-04 2020-07-14 Tokyo Electron Limited Method for controlling transistor delay of nanowire or nanosheet transistor devices
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JP7072440B2 (ja) * 2018-05-16 2022-05-20 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
US10923356B2 (en) * 2018-07-20 2021-02-16 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of silicon-germanium alloys
WO2020042254A1 (zh) * 2018-08-28 2020-03-05 中国科学院微电子研究所 一种高精度的刻蚀方法
CN112789710B (zh) * 2018-10-03 2025-03-04 朗姆研究公司 纳米线的选择性蚀刻
WO2020172208A1 (en) * 2019-02-20 2020-08-27 Tokyo Electron Limited Method for selective etching at an interface between materials
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TW202125622A (zh) 2019-08-28 2021-07-01 美商得昇科技股份有限公司 使用氟自由基處理工件的方法
JP7345334B2 (ja) 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
US12165848B2 (en) 2019-10-29 2024-12-10 Tokyo Electron Limited Substrate processing method, substrate processing apparatus, and method for producing nanowire or nanosheet transistor
JP7653666B2 (ja) * 2020-03-10 2025-03-31 パナソニックＩｐマネジメント株式会社 電子部品のクリーニング方法および素子チップの製造方法
JP7360979B2 (ja) * 2020-03-19 2023-10-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11424120B2 (en) * 2021-01-22 2022-08-23 Tokyo Electron Limited Plasma etching techniques
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JP7771835B2 (ja) * 2021-05-31 2025-11-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7803047B2 (ja) * 2021-06-15 2026-01-21 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2022264380A1 (ja) * 2021-06-17 2022-12-22 株式会社日立ハイテク プラズマ処理方法および半導体装置の製造方法
FR3125915A1 (fr) * 2021-10-07 2023-02-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de gravure selective isotrope de silicium
US12272558B2 (en) * 2022-05-09 2025-04-08 Tokyo Electron Limited Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
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Also Published As

Publication number Publication date
JP2019507505A (ja) 2019-03-14
KR102323389B1 (ko) 2021-11-05
TWI625785B (zh) 2018-06-01
TW201738955A (zh) 2017-11-01
KR20180112869A (ko) 2018-10-12
WO2017151958A1 (en) 2017-09-08
US20170271165A1 (en) 2017-09-21
US9984890B2 (en) 2018-05-29

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