TWI625785B - 具有可調節選擇性之等向性矽與矽化鍺蝕刻 - Google Patents

具有可調節選擇性之等向性矽與矽化鍺蝕刻 Download PDF

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TWI625785B
TWI625785B TW106106786A TW106106786A TWI625785B TW I625785 B TWI625785 B TW I625785B TW 106106786 A TW106106786 A TW 106106786A TW 106106786 A TW106106786 A TW 106106786A TW I625785 B TWI625785 B TW I625785B
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Taiwan
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substrate
silicon
material layer
processing
temperature
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TW106106786A
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English (en)
Chinese (zh)
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TW201738955A (zh
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Subhadeep KAL
蘇巴迪普 卡爾
Kandabara N. Tapily
坎達巴拉 Ｎ 泰伯利
Aelan Mosden
艾倫 莫斯登
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Tokyo Electron Limited
東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW106106786A 2016-03-02 2017-03-02 具有可調節選擇性之等向性矽與矽化鍺蝕刻 TWI625785B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662302584P 2016-03-02 2016-03-02
US201662302587P 2016-03-02 2016-03-02
US62/302,584 2016-03-02
US62/302,587 2016-03-02

Publications (2)

Publication Number Publication Date
TW201738955A TW201738955A (zh) 2017-11-01
TWI625785B true TWI625785B (zh) 2018-06-01

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TW106106786A TWI625785B (zh) 2016-03-02 2017-03-02 具有可調節選擇性之等向性矽與矽化鍺蝕刻

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Country Link
US (1) US9984890B2 (https=)
JP (1) JP6827633B2 (https=)
KR (1) KR102323389B1 (https=)
TW (1) TWI625785B (https=)
WO (1) WO2017151958A1 (https=)

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US10685887B2 (en) * 2017-12-04 2020-06-16 Tokyo Electron Limited Method for incorporating multiple channel materials in a complimentary field effective transistor (CFET) device
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JP7072440B2 (ja) * 2018-05-16 2022-05-20 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
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US10892158B2 (en) * 2019-04-01 2021-01-12 Hitachi High-Tech Corporation Manufacturing method of a semiconductor device and a plasma processing apparatus
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JP7653666B2 (ja) * 2020-03-10 2025-03-31 パナソニックＩｐマネジメント株式会社 電子部品のクリーニング方法および素子チップの製造方法
JP7360979B2 (ja) * 2020-03-19 2023-10-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
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JP7771835B2 (ja) * 2021-05-31 2025-11-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7803047B2 (ja) * 2021-06-15 2026-01-21 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2022264380A1 (ja) * 2021-06-17 2022-12-22 株式会社日立ハイテク プラズマ処理方法および半導体装置の製造方法
FR3125915A1 (fr) * 2021-10-07 2023-02-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de gravure selective isotrope de silicium
US12272558B2 (en) * 2022-05-09 2025-04-08 Tokyo Electron Limited Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
US12261053B2 (en) * 2022-08-10 2025-03-25 Tokyo Electron Limited Substrate processing with selective etching
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Also Published As

Publication number Publication date
JP2019507505A (ja) 2019-03-14
KR102323389B1 (ko) 2021-11-05
TW201738955A (zh) 2017-11-01
KR20180112869A (ko) 2018-10-12
WO2017151958A1 (en) 2017-09-08
US20170271165A1 (en) 2017-09-21
JP6827633B2 (ja) 2021-02-10
US9984890B2 (en) 2018-05-29

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