KR102322841B1 - 발광소자 및 이를 포함하는 발광소자 어레이 - Google Patents

발광소자 및 이를 포함하는 발광소자 어레이 Download PDF

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KR102322841B1
KR102322841B1 KR1020140187884A KR20140187884A KR102322841B1 KR 102322841 B1 KR102322841 B1 KR 102322841B1 KR 1020140187884 A KR1020140187884 A KR 1020140187884A KR 20140187884 A KR20140187884 A KR 20140187884A KR 102322841 B1 KR102322841 B1 KR 102322841B1
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type semiconductor
layer
semiconductor layer
electrode
conductivity
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KR20160077686A (ko
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이건화
최병균
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엘지이노텍 주식회사
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Priority to KR1020140187884A priority Critical patent/KR102322841B1/ko
Priority to JP2017529607A priority patent/JP6934812B2/ja
Priority to EP15873673.6A priority patent/EP3240050B1/en
Priority to US15/532,349 priority patent/US10186640B2/en
Priority to PCT/KR2015/014236 priority patent/WO2016105146A1/ko
Priority to CN201580071060.5A priority patent/CN107112394B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00—Illumination
    • Y10S362/80—Light emitting diode

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020140187884A 2014-12-24 2014-12-24 발광소자 및 이를 포함하는 발광소자 어레이 Active KR102322841B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020140187884A KR102322841B1 (ko) 2014-12-24 2014-12-24 발광소자 및 이를 포함하는 발광소자 어레이
JP2017529607A JP6934812B2 (ja) 2014-12-24 2015-12-24 発光素子及びそれを含む発光素子アレイ
EP15873673.6A EP3240050B1 (en) 2014-12-24 2015-12-24 Light emitting diode and light emitting diode array comprising same
US15/532,349 US10186640B2 (en) 2014-12-24 2015-12-24 Light emitting diode and light emitting diode array comprising same
PCT/KR2015/014236 WO2016105146A1 (ko) 2014-12-24 2015-12-24 발광소자 및 이를 포함하는 발광소자 어레이
CN201580071060.5A CN107112394B (zh) 2014-12-24 2015-12-24 发光二极管和包括发光二极管的发光二极管阵列

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Application Number Priority Date Filing Date Title
KR1020140187884A KR102322841B1 (ko) 2014-12-24 2014-12-24 발광소자 및 이를 포함하는 발광소자 어레이

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KR20160077686A KR20160077686A (ko) 2016-07-04
KR102322841B1 true KR102322841B1 (ko) 2021-11-08

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US (1) US10186640B2 (enExample)
EP (1) EP3240050B1 (enExample)
JP (1) JP6934812B2 (enExample)
KR (1) KR102322841B1 (enExample)
CN (1) CN107112394B (enExample)
WO (1) WO2016105146A1 (enExample)

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US10515998B2 (en) * 2017-09-29 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
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CN108511569B (zh) * 2018-03-28 2019-12-06 厦门乾照光电股份有限公司 一种led芯片及制作方法
CN109103315B (zh) * 2018-07-28 2020-09-11 厦门三安光电有限公司 发光组件、微发光二极管及其显示装置
JP7425618B2 (ja) * 2020-02-10 2024-01-31 アオイ電子株式会社 発光装置の製造方法、および発光装置
CN113066915B (zh) * 2021-04-27 2022-10-11 厦门三安光电有限公司 一种led芯片及一种半导体发光器件
CN113659050B (zh) * 2021-08-17 2023-07-04 天津三安光电有限公司 一种发光二极管及其制备方法
WO2023102913A1 (zh) * 2021-12-10 2023-06-15 天津三安光电有限公司 发光二极管及发光装置
CN114551675B (zh) * 2021-12-30 2025-04-04 京东方华灿光电(浙江)有限公司 红光微型发光二极管芯片及其制备方法
KR102664236B1 (ko) * 2022-07-21 2024-05-08 주식회사 엘포톤 반도체 발광소자
US20250294928A1 (en) * 2022-09-19 2025-09-18 Wavelord Co., Ltd Epitaxial die enabling easy detection of electrical defects, semiconductor light-emitting device using same, and manufacturing methods thereof
KR102545077B1 (ko) * 2022-09-19 2023-06-21 웨이브로드 주식회사 반도체 발광 소자용 에피택시 다이, 이를 포함하는 반도체 발광 소자 및 그 제조 방법
KR102566048B1 (ko) * 2022-09-19 2023-08-14 웨이브로드 주식회사 반도체 발광 소자용 에피택시 다이, 이를 포함하는 반도체 발광 소자 및 그 제조 방법
KR102867533B1 (ko) * 2022-12-21 2025-10-14 엘지전자 주식회사 화소용 반도체 발광 소자 및 이를 포함하는 디스플레이 장치

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JP6934812B2 (ja) 2021-09-15
EP3240050A4 (en) 2017-11-01
US10186640B2 (en) 2019-01-22
US20170338380A1 (en) 2017-11-23
CN107112394A (zh) 2017-08-29
KR20160077686A (ko) 2016-07-04
WO2016105146A1 (ko) 2016-06-30
EP3240050B1 (en) 2021-05-19
CN107112394B (zh) 2020-02-14
JP2018501650A (ja) 2018-01-18
EP3240050A1 (en) 2017-11-01

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