KR102308402B1 - 지지 부재, 배선 기판, 배선 기판의 제조 방법, 및 반도체 패키지의 제조 방법 - Google Patents

지지 부재, 배선 기판, 배선 기판의 제조 방법, 및 반도체 패키지의 제조 방법 Download PDF

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KR102308402B1
KR102308402B1 KR1020150106351A KR20150106351A KR102308402B1 KR 102308402 B1 KR102308402 B1 KR 102308402B1 KR 1020150106351 A KR1020150106351 A KR 1020150106351A KR 20150106351 A KR20150106351 A KR 20150106351A KR 102308402 B1 KR102308402 B1 KR 102308402B1
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layer
wiring
laminate
foil
metal foil
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KR20160016631A (ko
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도모히로 스즈키
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신꼬오덴기 고교 가부시키가이샤
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    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383Multilayer substrates
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    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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  • Production Of Multi-Layered Print Wiring Board (AREA)
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Families Citing this family (16)

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US9554468B2 (en) * 2013-12-19 2017-01-24 Intel Corporation Panel with releasable core
US9522514B2 (en) 2013-12-19 2016-12-20 Intel Corporation Substrate or panel with releasable core
US9554472B2 (en) * 2013-12-19 2017-01-24 Intel Corporation Panel with releasable core
US9434135B2 (en) 2013-12-19 2016-09-06 Intel Corporation Panel with releasable core
KR101672641B1 (ko) * 2015-07-01 2016-11-03 앰코 테크놀로지 코리아 주식회사 반도체 디바이스의 제조 방법 및 이에 따른 반도체 디바이스
JP6570924B2 (ja) * 2015-08-31 2019-09-04 新光電気工業株式会社 電子部品装置及びその製造方法
US10236245B2 (en) * 2016-03-23 2019-03-19 Dyi-chung Hu Package substrate with embedded circuit
JP6741456B2 (ja) * 2016-03-31 2020-08-19 Fdk株式会社 多層回路基板
JP6594264B2 (ja) * 2016-06-07 2019-10-23 新光電気工業株式会社 配線基板及び半導体装置、並びにそれらの製造方法
JP6894289B2 (ja) * 2017-05-17 2021-06-30 新光電気工業株式会社 配線基板及びその製造方法
KR102450598B1 (ko) * 2017-11-09 2022-10-07 삼성전기주식회사 지지체 부착 인쇄회로기판 및 지지체 부착 인쇄회로기판의 제조방법
JP7359531B2 (ja) * 2018-06-07 2023-10-11 新光電気工業株式会社 配線基板、配線基板の製造方法及び半導体パッケージの製造方法
JP2020004926A (ja) * 2018-07-02 2020-01-09 凸版印刷株式会社 配線基板及び配線基板の製造方法
KR102499039B1 (ko) * 2018-11-08 2023-02-13 삼성전자주식회사 캐리어 기판 및 상기 캐리어 기판을 이용한 반도체 패키지의 제조방법
JP7583362B2 (ja) * 2018-12-14 2024-11-14 三菱瓦斯化学株式会社 半導体素子搭載用パッケージ基板の製造方法
JP7700986B2 (ja) * 2021-10-19 2025-07-01 新光電気工業株式会社 配線基板及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004862A (ja) 2006-06-26 2008-01-10 Cmk Corp プリント配線板及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5177855B2 (ja) * 2008-02-29 2013-04-10 京セラSlcテクノロジー株式会社 配線基板の製造方法
JP4473935B1 (ja) * 2009-07-06 2010-06-02 新光電気工業株式会社 多層配線基板
JP5526746B2 (ja) * 2009-12-04 2014-06-18 凸版印刷株式会社 多層基板の製造方法及び支持基板
JP2012216773A (ja) * 2011-03-29 2012-11-08 Shinko Electric Ind Co Ltd 配線基板及びその製造方法
US20130180769A1 (en) * 2011-09-22 2013-07-18 Hitachi Chemical Company, Ltd. Laminate body, laminate plate, multilayer laminate plate, printed wiring board, and method for manufacture of laminate plate
US9230899B2 (en) * 2011-09-30 2016-01-05 Unimicron Technology Corporation Packaging substrate having a holder, method of fabricating the packaging substrate, package structure having a holder, and method of fabricating the package structure
JP2013138115A (ja) * 2011-12-28 2013-07-11 Kinko Denshi Kofun Yugenkoshi 支持体を有するパッケージ基板及びその製造方法、並びに支持体を有するパッケージ構造及びその製造方法
JP2013214578A (ja) * 2012-03-30 2013-10-17 Ibiden Co Ltd 配線板及びその製造方法
JP2014130856A (ja) * 2012-12-28 2014-07-10 Kyocer Slc Technologies Corp 配線基板の製造方法
TWI474450B (zh) * 2013-09-27 2015-02-21 旭德科技股份有限公司 封裝載板及其製作方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004862A (ja) 2006-06-26 2008-01-10 Cmk Corp プリント配線板及びその製造方法

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