KR102290571B1 - 촬상 장치 및 그 동작 방법 - Google Patents

촬상 장치 및 그 동작 방법 Download PDF

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Publication number
KR102290571B1
KR102290571B1 KR1020140098077A KR20140098077A KR102290571B1 KR 102290571 B1 KR102290571 B1 KR 102290571B1 KR 1020140098077 A KR1020140098077 A KR 1020140098077A KR 20140098077 A KR20140098077 A KR 20140098077A KR 102290571 B1 KR102290571 B1 KR 102290571B1
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transistor
wiring
oxide semiconductor
film
circuit
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Korean (ko)
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KR20150016127A (ko
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히로유키 미야케
히데아키 시시도
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1892—Direct radiation image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Molecular Biology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020140098077A 2013-08-02 2014-07-31 촬상 장치 및 그 동작 방법 Active KR102290571B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020210100573A KR20210098886A (ko) 2013-08-02 2021-07-30 촬상 장치 및 그 동작 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-161035 2013-08-02
JP2013161035 2013-08-02

Related Child Applications (1)

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KR1020210100573A Division KR20210098886A (ko) 2013-08-02 2021-07-30 촬상 장치 및 그 동작 방법

Publications (2)

Publication Number Publication Date
KR20150016127A KR20150016127A (ko) 2015-02-11
KR102290571B1 true KR102290571B1 (ko) 2021-08-19

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KR1020140098077A Active KR102290571B1 (ko) 2013-08-02 2014-07-31 촬상 장치 및 그 동작 방법
KR1020210100573A Ceased KR20210098886A (ko) 2013-08-02 2021-07-30 촬상 장치 및 그 동작 방법

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Country Link
US (1) US9190448B2 (enExample)
JP (1) JP6371629B2 (enExample)
KR (2) KR102290571B1 (enExample)
TW (1) TWI635750B (enExample)

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US10896923B2 (en) * 2015-09-18 2021-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of operating an imaging device with global shutter system
JP7148269B2 (ja) 2018-05-02 2022-10-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および撮像装置
JP7240151B2 (ja) 2018-11-22 2023-03-15 株式会社ジャパンディスプレイ 検出装置及び表示装置
JP7360248B2 (ja) * 2019-03-29 2023-10-12 日立Ｇｅニュークリア・エナジー株式会社 耐放射線イメージセンサおよび耐放射線撮像装置
US11269091B2 (en) * 2019-04-23 2022-03-08 Varex Imaging Corporation Threshold voltage stabilizing system and method

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