KR102262814B1 - 카바메이트 성분을 포함하는 포토레지스트 - Google Patents

카바메이트 성분을 포함하는 포토레지스트 Download PDF

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KR102262814B1
KR102262814B1 KR1020140065976A KR20140065976A KR102262814B1 KR 102262814 B1 KR102262814 B1 KR 102262814B1 KR 1020140065976 A KR1020140065976 A KR 1020140065976A KR 20140065976 A KR20140065976 A KR 20140065976A KR 102262814 B1 KR102262814 B1 KR 102262814B1
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South Korea
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group
acid
photoresist
photoresist composition
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KR20140141518A (ko
Inventor
3세 윌리엄 윌리엄스
콩 류
쳉-바이 슈
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C269/00—Preparation of derivatives of carbamic acid, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C269/04—Preparation of derivatives of carbamic acid, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups from amines with formation of carbamate groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C271/00—Derivatives of carbamic acids, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C271/06—Esters of carbamic acids
    • C07C271/08—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms
    • C07C271/24—Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atom of at least one of the carbamate groups bound to a carbon atom of a ring other than a six-membered aromatic ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
KR1020140065976A 2013-05-31 2014-05-30 카바메이트 성분을 포함하는 포토레지스트 Active KR102262814B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/907,789 US10539870B2 (en) 2013-05-31 2013-05-31 Photoresists comprising carbamate component
US13/907,789 2013-05-31

Publications (2)

Publication Number Publication Date
KR20140141518A KR20140141518A (ko) 2014-12-10
KR102262814B1 true KR102262814B1 (ko) 2021-06-08

Family

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KR1020140065976A Active KR102262814B1 (ko) 2013-05-31 2014-05-30 카바메이트 성분을 포함하는 포토레지스트

Country Status (5)

Country Link
US (1) US10539870B2 (https=)
JP (1) JP6613020B2 (https=)
KR (1) KR102262814B1 (https=)
CN (1) CN104216224B (https=)
TW (1) TWI533091B (https=)

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JP5203575B2 (ja) 2005-05-04 2013-06-05 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． コーティング組成物
US9256125B2 (en) 2013-03-30 2016-02-09 Rohm And Haas Electronic Materials, Llc Acid generators and photoresists comprising same
TWI636326B (zh) * 2015-05-15 2018-09-21 Rohm And Haas Electronic Materials Korea Ltd. 光鹼產生劑及包括其的光致抗蝕劑組成物
JP2017019997A (ja) * 2015-06-01 2017-01-26 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 酸発生剤化合物及びそれを含むフォトレジスト
TWI672562B (zh) * 2015-09-30 2019-09-21 南韓商羅門哈斯電子材料韓國公司 光致抗蝕劑組合物及方法
CN106556972B (zh) * 2015-09-30 2021-07-27 罗门哈斯电子材料韩国有限公司 用于光刻的罩面层组合物和方法
TWI646397B (zh) * 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
US11315798B2 (en) 2016-04-08 2022-04-26 Intel Corporation Two-stage bake photoresist with releasable quencher
JP6957989B2 (ja) * 2016-06-30 2021-11-02 住友化学株式会社 レジスト組成物
CN109690405B (zh) * 2016-09-15 2022-10-04 日产化学株式会社 抗蚀剂下层膜形成用组合物
HUE064664T2 (hu) 2018-01-30 2024-04-28 Univ Texas Pipekolinsav-észterek a proteaszóma gátlására
JP7283372B2 (ja) * 2019-01-25 2023-05-30 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP7268615B2 (ja) * 2019-02-27 2023-05-08 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7344956B2 (ja) * 2019-03-29 2023-09-14 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
JP7542343B2 (ja) * 2020-07-07 2024-08-30 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP2024059081A (ja) * 2022-10-17 2024-04-30 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
CN119529268A (zh) * 2023-08-30 2025-02-28 中国科学技术大学 单组分光刻胶及其制备方法与应用

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JP2011197067A (ja) * 2010-03-17 2011-10-06 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2012073279A (ja) * 2009-09-16 2012-04-12 Sumitomo Chemical Co Ltd レジスト組成物
JP2012073606A (ja) * 2010-09-03 2012-04-12 Shin Etsu Chem Co Ltd パターン形成方法及び化学増幅ポジ型レジスト材料
JP2012072062A (ja) * 2009-09-16 2012-04-12 Sumitomo Chemical Co Ltd レジスト組成物
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JP2013011905A (ja) * 2012-09-18 2013-01-17 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法

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JP2012073612A (ja) 2010-09-14 2012-04-12 Rohm & Haas Electronic Materials Llc マルチアミド成分を含むフォトレジスト
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JP5836230B2 (ja) * 2011-09-15 2015-12-24 富士フイルム株式会社 パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及び、レジスト膜、並びに、これらを用いた電子デバイスの製造方法
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JP2011057663A (ja) * 2009-08-11 2011-03-24 Sumitomo Chemical Co Ltd 化合物及びフォトレジスト組成物
JP2012073279A (ja) * 2009-09-16 2012-04-12 Sumitomo Chemical Co Ltd レジスト組成物
JP2012072062A (ja) * 2009-09-16 2012-04-12 Sumitomo Chemical Co Ltd レジスト組成物
JP2011197067A (ja) * 2010-03-17 2011-10-06 Sumitomo Chemical Co Ltd レジスト組成物及びレジストパターンの製造方法
JP2012073606A (ja) * 2010-09-03 2012-04-12 Shin Etsu Chem Co Ltd パターン形成方法及び化学増幅ポジ型レジスト材料
JP2012137729A (ja) * 2010-12-07 2012-07-19 Shin Etsu Chem Co Ltd 塩基性化合物、化学増幅レジスト材料及びパターン形成方法
JP2013011905A (ja) * 2012-09-18 2013-01-17 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
CN104216224B (zh) 2020-03-24
JP2014235432A (ja) 2014-12-15
JP6613020B2 (ja) 2019-11-27
CN104216224A (zh) 2014-12-17
KR20140141518A (ko) 2014-12-10
US10539870B2 (en) 2020-01-21
US20140356785A1 (en) 2014-12-04
TW201502707A (zh) 2015-01-16
TWI533091B (zh) 2016-05-11

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