KR102243262B1 - 이미지 센서용 웨이퍼 적층체의 분단 방법 및 분단 장치 - Google Patents

이미지 센서용 웨이퍼 적층체의 분단 방법 및 분단 장치 Download PDF

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Publication number
KR102243262B1
KR102243262B1 KR1020140053029A KR20140053029A KR102243262B1 KR 102243262 B1 KR102243262 B1 KR 102243262B1 KR 1020140053029 A KR1020140053029 A KR 1020140053029A KR 20140053029 A KR20140053029 A KR 20140053029A KR 102243262 B1 KR102243262 B1 KR 102243262B1
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South Korea
Prior art keywords
wafer
glass
along
line
dividing
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KR1020140053029A
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English (en)
Korean (ko)
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KR20150037476A (ko
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타케히로 가미무라
Original Assignee
미쓰보시 다이야몬도 고교 가부시키가이샤
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Publication of KR20150037476A publication Critical patent/KR20150037476A/ko
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Publication of KR102243262B1 publication Critical patent/KR102243262B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020140053029A 2013-09-30 2014-05-01 이미지 센서용 웨이퍼 적층체의 분단 방법 및 분단 장치 KR102243262B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-203711 2013-09-30
JP2013203711A JP6185813B2 (ja) 2013-09-30 2013-09-30 イメージセンサ用ウエハ積層体の分断方法並びに分断装置

Publications (2)

Publication Number Publication Date
KR20150037476A KR20150037476A (ko) 2015-04-08
KR102243262B1 true KR102243262B1 (ko) 2021-04-21

Family

ID=52792961

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140053029A KR102243262B1 (ko) 2013-09-30 2014-05-01 이미지 센서용 웨이퍼 적층체의 분단 방법 및 분단 장치

Country Status (4)

Country Link
JP (1) JP6185813B2 (zh)
KR (1) KR102243262B1 (zh)
CN (1) CN104517826B (zh)
TW (1) TWI603392B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6561565B2 (ja) * 2015-04-30 2019-08-21 三星ダイヤモンド工業株式会社 貼り合わせ基板の分割方法及び分割装置
JP6610026B2 (ja) 2015-06-23 2019-11-27 三星ダイヤモンド工業株式会社 スクライブ装置
JP6578759B2 (ja) 2015-06-29 2019-09-25 三星ダイヤモンド工業株式会社 ブレイク装置
JP6696263B2 (ja) * 2015-09-29 2020-05-20 三星ダイヤモンド工業株式会社 脆性材料基板のスクライブ方法及びスクライブヘッドユニット

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050245051A1 (en) 2002-04-01 2005-11-03 Mitsuboshi Diamond Industrial Co., Ltd. Parting method for fragile material substrate and parting device using the method
US20060162173A1 (en) * 2005-01-24 2006-07-27 Micro Processing Technology, Inc. Scribing system with particle remover
JP2009277884A (ja) 2008-05-14 2009-11-26 Sharp Corp 電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
US20100102437A1 (en) 2007-06-29 2010-04-29 Fujikura Ltd. Semiconductor package and manufacturing method thereof
JP2013122984A (ja) 2011-12-12 2013-06-20 Canon Inc 半導体素子の製造方法
JP2013140916A (ja) 2012-01-06 2013-07-18 Toppan Printing Co Ltd 半導体装置及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590403A (ja) 1991-08-01 1993-04-09 Disco Abrasive Syst Ltd 切削装置
JPH06244279A (ja) 1993-02-19 1994-09-02 Fujitsu Miyagi Electron:Kk ダイシングソー
JP2002224929A (ja) 2001-01-30 2002-08-13 Takemoto Denki Seisakusho:Kk 板状被加工物の切削装置
TWI226877B (en) * 2001-07-12 2005-01-21 Mitsuboshi Diamond Ind Co Ltd Method of manufacturing adhered brittle material substrates and method of separating adhered brittle material substrates
JP2003051464A (ja) 2001-08-03 2003-02-21 Takemoto Denki Seisakusho:Kk 板状被加工物の切削装置における切削検査手段
JP2005001264A (ja) * 2003-06-12 2005-01-06 Sharp Corp 分断装置および分断方法
TWI241018B (en) * 2003-12-19 2005-10-01 Chipmos Technologies Inc Method for manufacturing wafer level image sensor package with chip on glass configuration and structure of the same
KR100608420B1 (ko) * 2004-11-01 2006-08-02 동부일렉트로닉스 주식회사 이미지 센서 칩 패키지 및 그 제조방법
KR20070117183A (ko) * 2006-06-07 2007-12-12 삼성전자주식회사 스크라이브 장비 및 이를 이용한 스크라이브 방법
JP5395446B2 (ja) * 2009-01-22 2014-01-22 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
TWI488824B (zh) * 2011-12-05 2015-06-21 Mitsuboshi Diamond Ind Co Ltd The method and scribing device of glass substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050245051A1 (en) 2002-04-01 2005-11-03 Mitsuboshi Diamond Industrial Co., Ltd. Parting method for fragile material substrate and parting device using the method
US20060162173A1 (en) * 2005-01-24 2006-07-27 Micro Processing Technology, Inc. Scribing system with particle remover
US20100102437A1 (en) 2007-06-29 2010-04-29 Fujikura Ltd. Semiconductor package and manufacturing method thereof
JP2009277884A (ja) 2008-05-14 2009-11-26 Sharp Corp 電子素子モジュールの製造方法、電子素子モジュールおよび電子情報機器
JP2013122984A (ja) 2011-12-12 2013-06-20 Canon Inc 半導体素子の製造方法
JP2013140916A (ja) 2012-01-06 2013-07-18 Toppan Printing Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN104517826B (zh) 2018-06-19
JP2015070135A (ja) 2015-04-13
TW201513191A (zh) 2015-04-01
CN104517826A (zh) 2015-04-15
TWI603392B (zh) 2017-10-21
KR20150037476A (ko) 2015-04-08
JP6185813B2 (ja) 2017-08-23

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