KR102213729B1 - 절삭 방법 - Google Patents

절삭 방법 Download PDF

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Publication number
KR102213729B1
KR102213729B1 KR1020150026547A KR20150026547A KR102213729B1 KR 102213729 B1 KR102213729 B1 KR 102213729B1 KR 1020150026547 A KR1020150026547 A KR 1020150026547A KR 20150026547 A KR20150026547 A KR 20150026547A KR 102213729 B1 KR102213729 B1 KR 102213729B1
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KR
South Korea
Prior art keywords
cutting
acid
group
cutting blade
metal
Prior art date
Application number
KR1020150026547A
Other languages
English (en)
Korean (ko)
Other versions
KR20150108310A (ko
Inventor
겐지 다케노우치
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20150108310A publication Critical patent/KR20150108310A/ko
Application granted granted Critical
Publication of KR102213729B1 publication Critical patent/KR102213729B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020150026547A 2014-03-17 2015-02-25 절삭 방법 KR102213729B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-053195 2014-03-17
JP2014053195A JP6274926B2 (ja) 2014-03-17 2014-03-17 切削方法

Publications (2)

Publication Number Publication Date
KR20150108310A KR20150108310A (ko) 2015-09-25
KR102213729B1 true KR102213729B1 (ko) 2021-02-05

Family

ID=54069670

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150026547A KR102213729B1 (ko) 2014-03-17 2015-02-25 절삭 방법

Country Status (5)

Country Link
US (1) US9349647B2 (ja)
JP (1) JP6274926B2 (ja)
KR (1) KR102213729B1 (ja)
CN (1) CN104934308B (ja)
TW (1) TWI647062B (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018181903A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181899A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 板状被加工物の加工方法
JP2018181909A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181902A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181900A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 板状被加工物の加工方法
JP6824581B2 (ja) * 2017-04-04 2021-02-03 株式会社ディスコ 加工方法
JP6890885B2 (ja) * 2017-04-04 2021-06-18 株式会社ディスコ 加工方法
JP2018181901A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP6824582B2 (ja) * 2017-04-04 2021-02-03 株式会社ディスコ 加工方法
JP2018181907A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181908A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP6949421B2 (ja) * 2017-05-09 2021-10-13 株式会社ディスコ 加工方法
JP6836491B2 (ja) * 2017-11-07 2021-03-03 株式会社荏原製作所 デバイスが形成された基板を個々のチップに分割するための方法および装置
JP6994363B2 (ja) * 2017-11-22 2022-01-14 株式会社ディスコ 切削装置
JP2019126746A (ja) * 2018-01-22 2019-08-01 株式会社ディスコ 加工装置
JP7150390B2 (ja) 2018-02-14 2022-10-11 株式会社ディスコ 加工装置
JP7340911B2 (ja) * 2018-08-17 2023-09-08 株式会社ディスコ パッケージ基板の加工方法
TW202126408A (zh) 2020-01-02 2021-07-16 財團法人工業技術研究院 毛邊清除裝置

Citations (7)

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Publication number Priority date Publication date Assignee Title
JP2001308037A (ja) * 2000-04-26 2001-11-02 Seiko Epson Corp ダイシング方法
US20040209443A1 (en) * 2003-04-21 2004-10-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
US20070269980A1 (en) 2006-05-19 2007-11-22 Cree, Inc. Methods for reducing contamination of semiconductor devices and materials during wafer processing
JP2008227187A (ja) 2007-03-13 2008-09-25 Nec Electronics Corp ダイシングブレード
JP2009032726A (ja) * 2007-07-24 2009-02-12 Disco Abrasive Syst Ltd ウエーハの分割方法
CN102311863A (zh) 2010-07-09 2012-01-11 气体产品与化学公司 晶片切割方法及用于该方法的组合物
JP2013184277A (ja) 2012-03-09 2013-09-19 Disco Corp バイト切削装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211670A (ja) * 1994-01-13 1995-08-11 Ryoden Semiconductor Syst Eng Kk 半導体装置のダイシング方法
JP3128508B2 (ja) * 1996-04-12 2001-01-29 株式会社アルテクス 超音波振動カッター
US6310017B1 (en) * 1999-02-01 2001-10-30 Ct Associates, Inc. Cleaner composition, method for making and using same
JP4394210B2 (ja) 1999-09-08 2010-01-06 株式会社ディスコ 切削方法
JP2001334494A (ja) * 2000-05-26 2001-12-04 Suzuki Motor Corp 超音波カッタ
JP2004153086A (ja) * 2002-10-31 2004-05-27 Showa Denko Kk 金属研磨組成物、金属膜の研磨方法および基板の製造方法
JP2004259936A (ja) 2003-02-26 2004-09-16 Disco Abrasive Syst Ltd Ｑｆｎ基板の処理方法
EP1628336B1 (en) * 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid and cleaning method
JP2007125667A (ja) 2005-11-07 2007-05-24 Disco Abrasive Syst Ltd 基板の切断装置
CN104093810B (zh) * 2012-02-01 2016-01-20 日立化成株式会社 金属用研磨液及研磨方法
JP2013161998A (ja) * 2012-02-07 2013-08-19 Disco Abrasive Syst Ltd 切削方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001308037A (ja) * 2000-04-26 2001-11-02 Seiko Epson Corp ダイシング方法
US20040209443A1 (en) * 2003-04-21 2004-10-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
US20070269980A1 (en) 2006-05-19 2007-11-22 Cree, Inc. Methods for reducing contamination of semiconductor devices and materials during wafer processing
JP2008227187A (ja) 2007-03-13 2008-09-25 Nec Electronics Corp ダイシングブレード
JP2009032726A (ja) * 2007-07-24 2009-02-12 Disco Abrasive Syst Ltd ウエーハの分割方法
CN102311863A (zh) 2010-07-09 2012-01-11 气体产品与化学公司 晶片切割方法及用于该方法的组合物
JP2012019219A (ja) * 2010-07-09 2012-01-26 Air Products & Chemicals Inc ウエハーダイシングのための方法及び当該方法に有用な組成物
JP2013184277A (ja) 2012-03-09 2013-09-19 Disco Corp バイト切削装置

Also Published As

Publication number Publication date
TWI647062B (zh) 2019-01-11
US20150262881A1 (en) 2015-09-17
CN104934308A (zh) 2015-09-23
KR20150108310A (ko) 2015-09-25
US9349647B2 (en) 2016-05-24
TW201544234A (zh) 2015-12-01
JP2015177089A (ja) 2015-10-05
CN104934308B (zh) 2020-03-17
JP6274926B2 (ja) 2018-02-07

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