TW201544234A - 切削方法 - Google Patents
切削方法 Download PDFInfo
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- TW201544234A TW201544234A TW104104274A TW104104274A TW201544234A TW 201544234 A TW201544234 A TW 201544234A TW 104104274 A TW104104274 A TW 104104274A TW 104104274 A TW104104274 A TW 104104274A TW 201544234 A TW201544234 A TW 201544234A
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- IFQUWYZCAGRUJN-UHFFFAOYSA-N ethylenediaminediacetic acid Chemical compound OC(=O)CNCCNCC(O)=O IFQUWYZCAGRUJN-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- 229960002885 histidine Drugs 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
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- 238000009434 installation Methods 0.000 description 1
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 229960003136 leucine Drugs 0.000 description 1
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- 238000000465 moulding Methods 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
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- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
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- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 1
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- 239000010980 sapphire Substances 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229960001153 serine Drugs 0.000 description 1
- IFGCUJZIWBUILZ-UHFFFAOYSA-N sodium 2-[[2-[[hydroxy-(3,4,5-trihydroxy-6-methyloxan-2-yl)oxyphosphoryl]amino]-4-methylpentanoyl]amino]-3-(1H-indol-3-yl)propanoic acid Chemical compound [Na+].C=1NC2=CC=CC=C2C=1CC(C(O)=O)NC(=O)C(CC(C)C)NP(O)(=O)OC1OC(C)C(O)C(O)C1O IFGCUJZIWBUILZ-UHFFFAOYSA-N 0.000 description 1
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- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本發明之課題是提供一種在以切削刀片對至少在切削預定位置上包含延性材料之金屬的被加工物進行切削之時,可抑制毛邊的產生的切削方法。解決手段為以切削刀片對至少在切削預定位置上包含金屬之被加工物進行切削之切削方法,其特徵為,具備一邊將切削液供給至切削刀片切入被加工物之加工點,一邊以該切削刀片切削被加工物之切削預定位置的切削步驟,且該切削液包含有機酸和氧化劑。
Description
本發明是有關於適合對QFN基板或將TEG形成在分割預定線上之晶圓等進行切削的切削方法。
近年來,行動電話、個人電腦等電氣機器被要求要更加地輕量化、小型化,作為適合此小型化之器件,已開發出將半導體晶片封裝以形成器件之稱為晶片尺寸封裝(chip size package)(CSP)的技術且正供作實用。
CSP是藉由將例如QFN(Quad Flat Non-Lead Package)基板分割成一個個的器件而形成。QFN基板是由以預定間隔進行配置之複數個半導體晶片、以將各半導體晶片區隔劃分的方式形成為格子狀的電極框、從電極框往內側以魚骨的形式進行配置並連接於形成在各半導體晶片的表面上之接合墊(bonding pad)的電極端子,以及模製成將各半導體晶片和電極框包覆在內之樹脂層所構成。
為了將QFN基板分割成一個個的CSP,是透過具備可旋轉之切削刀片的切削裝置將QFN基板的電極框切斷,並將魚骨形式的電極端子按照一個個的器件進行分離以形
成CSP(參照例如,日本專利特開2004-259936號公報)。
另一方面,在半導體晶圓的分割預定線上形成有複數個由例如銅所構成之用於評價半導體器件的電氣特性之稱為TEG(Test Element Group)的特性評價用金屬元件。透過在分割預定線上形成複數個特性評價用金屬元件,可以在分割半導體晶圓之時切削除去TEG。
當以切削刀片對QFN基板或將TEG形成在分割預定線上之半導體晶圓等,在切削預定位置上包含延性材料之金屬的被加工物進行切削時,會在金屬部分產生毛邊。所產生之毛邊會有引發端子之間的短路,或在處理被加工物的過程中因毛邊掉落至接合墊上等而產生接合不良等的問題。
於是,已經有像例如日本專利特開2001-77055號公報中所揭示之毛邊對策用往復切削方法,或者像日本專利特開2007-125667號公報中所揭示之設置去毛邊用噴嘴,以用來除去所產生之毛邊的各種方法被提出。
專利文獻1:日本專利特開2004-259936號公報
專利文獻2:日本專利特開2001-77055號公報
專利文獻3:日本專利特開2007-125667號公報
如上所述,為了除去切削加工所產生之金屬毛邊,雖然以往已提出過各種方法,但仍然有要用以往的方法將產生之金屬毛邊完全去除會非常困難的問題。
本發明是有鑑於此種問題點而作成的,其目的為提供一種在以切削刀片對至少在切削預定位置上包含延性材料之金屬的被加工物進行切削之時,可抑制毛邊的產生的切削方法。
根據本發明所提供的切削方法,是以切削刀片對至少在切削預定位置上包含金屬之被加工物進行切削之切削方法,其特徵在於具備:一邊將切削液供給至切削刀片切入被加工物之加工點,一邊以該切削刀片切削被加工物之切削預定位置的切削步驟,且該切削液包含有機酸和氧化劑。
較理想的是,切削液還含有防蝕劑。較理想的是,對於切削刀片,是一邊在切削刀片的徑向上賦予超音波振動一邊實施切削步驟。
在本發明之切削方法中,是一邊對加工點供給包含有機酸和氧化劑之切削液一邊執行切削作業。可透過切削液所含有之有機酸將金屬改質而抑制其延性,其結果為,不但可以抑制毛邊的產生,還可因為切削液含有氧化劑而利用切削液使形成於金屬表面的膜質變化,使金屬失去延性而變得容易去除,而可促進加工性。
在請求項2所記載之發明中,是藉由使切削液含有防蝕劑而防止金屬的腐蝕(溶出)。
2‧‧‧切削裝置
4‧‧‧吸引台
6‧‧‧吸引部
8‧‧‧固定治具(保持治具)
10‧‧‧QFN基板
12、12A‧‧‧切削單元
14、36‧‧‧主軸
16、44‧‧‧切削刀片
18‧‧‧校準機構
18‧‧‧校準單元
24‧‧‧金屬框架
25‧‧‧外周剩餘區域
25a‧‧‧非器件區域
26a、26b、26c‧‧‧器件區域
27a、27b‧‧‧切割預定線
28‧‧‧器件形成部
30‧‧‧切削液供給噴嘴
31‧‧‧切削液
32‧‧‧主軸殼體
34‧‧‧鏜孔
44a‧‧‧刀刃
48‧‧‧超音波振動器
50‧‧‧壓電元件
52、54‧‧‧環狀電極板
56‧‧‧電動馬達
58‧‧‧馬達裝設部
60‧‧‧轉子
62‧‧‧定子線圈
64‧‧‧電力供給機構
66‧‧‧旋轉變壓器
68‧‧‧受電機構
70‧‧‧供電機構
72‧‧‧旋轉芯
74‧‧‧受電線圈
76‧‧‧定子鐵心
78‧‧‧供電線圈
80、92‧‧‧電氣配線
82‧‧‧交流電源
84‧‧‧電壓調整機構
86‧‧‧頻率調整機構
88‧‧‧控制機構
90‧‧‧輸入機構
94‧‧‧控制電路
X、Y、Z、±X、±Y、±Z‧‧‧方向
圖1是顯示切削裝置之一例的局部切斷的立體圖。
圖2是說明切削步驟之模式性立體圖。
圖3是可賦予超音波振動之切削單元的剖面圖。
以下,參照附圖詳細說明本發明之實施形態。參照圖1,所示為適合用以實施本發明之切削方法的切削裝置2的局部切斷立體圖。在切削裝置2的吸引台4上形成有連通至圖未示的吸引源之吸引部6。吸引台4是配置成可在X軸方向上往復運動並且可旋轉。
成為被加工物之封裝基板的一種的QFN基板10是載置於固定治具(保持治具)8上,並將搭載有QFN基板10的固定治具8載置於切削裝置2的吸引台4上。
當將載置有QFN基板10之固定治具8載置於吸引台4上,並從吸引部6讓吸引力產生作用後,即可使吸引力分別作用在固定治具8之圖未示的吸引孔中,而吸引保持QFN基板10。
在切削裝置2上,配置有將切削刀片16裝設在主軸14之前端部而構成之切削單元12。而且,以可以和切削單元12一體地在Y軸方向及Z軸方向上移動的方式配置有
用以檢測QFN基板10之應切削的切削預定線之校準機構18。
透過固定治具8吸引保持在吸引台4上之QFN基板10是藉由朝+X軸方向移動而定位於校準單元18的正下方,且藉由構成校準單元18的攝像單元20拍攝表面而實施檢測應切削之切削預定線的校準。
其次,參照圖2,說明本發明之實施形態之切削方法。被加工物之QFN基板10具有矩形的金屬框架24,在被金屬框架24之外周剩餘區域25及非器件區域25a所圍繞的區域中,在圖示之例中有3個器件區域26a、26b、26c存在。
於各器件區域26a、26b、26c中,界定形成有以縱橫設置成相互直交之第1及第2切削預定線27a、27b所劃分出的複數個器件形成部28,且在一個個的器件形成部28中形成有複數個電極(圖未示)。
各電極彼此透過模塑形於金屬框架24上的樹脂而形成絕緣。藉由切削第1切削預定線27a及第2切削預定線27b,可使各器件的電極顯露在其兩側。
圖2中,12為切削裝置的切削單元,是將切削刀片16裝設在藉由圖未示之馬達旋轉驅動的主軸14的前端部上而構成。且配置有鄰接於切削刀片16以將切削液供給到切削刀片16切入被加工物之加工點的切削液供給噴嘴30。
在本實施形態之切削方法中,是在吸引台4上透過固定治具8吸引保持QFN基板10,並一邊由切削液供給噴
嘴30將切削液31供給到切削刀片16切入被加工物(即QFN基板10)之加工點,一邊將吸引台4朝+X方向加工傳送,以藉切削刀片16切削QFN基板10的第1切削預定線27a。由切削液供給噴嘴30所供給的切削液31,至少含有有機酸和氧化劑。較理想的是,切削液31還含有防蝕劑。
於Y軸方向上分度傳送切削單元12,並且一邊由切削液供給噴嘴30供給切削液31一邊以切削刀片16依序地對第1切削預定線27a進行切削。接著,將吸引台4旋轉90°後,一邊由切削液供給噴嘴30供給切削液31一邊以切削刀片16依序地對第2切削預定線27b進行切削以將QFN基板10分割成CSP。
本實施形態之切削方法,是一邊將至少含有有機酸和氧化劑之切削液31供應到切削刀片16切入QFN基板10之加工點一邊執行切削。透過切削液31中所含有之有機酸,可將QFN基板10中可能含有之金屬改質以抑制延性而對QFN基板10進行切削。因此,透過這種切削,將不會有從金屬上產生毛邊(突起物)之情形。又,藉由使用氧化劑,可將金屬的表面氧化而降低金屬的延性,使金屬表面的加工性提升。
作為有機酸,可採用例如,分子內至少具有1個羧基和至少1個胺基的化合物。此時,胺基中的至少1個宜為2級或3級的胺基。並且,作為有機酸而使用的化合物宜具有取代基。
可以作為有機酸而使用之胺基酸,可以列舉出甘
胺酸、二羥乙基甘胺酸、甘胺醯甘胺酸、羥乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別異白胺酸、L-異白胺酸、L-苯丙胺酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺酸、L-麩醯胺酸、氮絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-組胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫鹼(ergothioneine)、蜂毒明肽(apamin)、第一型血管收縮素(angiotensin I)、第二型血管收縮素(angiotensin II)及抗痛素(antipain)等。其中,尤以甘胺酸、L-丙胺酸、L-脯胺酸、L-組胺酸、L-離胺酸,以及二羥乙基甘胺酸為較佳。
又,可以作為有機酸而使用之胺基多元酸(amino polyacid),可以列舉出亞胺二乙酸、氮基三乙酸、二乙三胺五乙酸、乙二胺四乙酸、羥乙基亞胺二乙酸、氮基三亞甲基膦酸(nitrilotris(methylene)phosphonic acid)、乙二胺-N,N,N',N'-四亞甲基磺酸、1,2-二胺丙烷四乙酸、二醇醚二胺四乙酸、反式環己烷二胺四乙酸、乙二胺鄰羥基苯基乙
酸、乙二胺二琥珀酸(SS體)、β-丙胺酸二乙酸、N-(2-羧酸根合乙基)-L-天冬胺酸,以及N,N'-雙(2-羥基芐基)乙二胺-N,N'-二乙酸等。
此外,可以作為有機酸而使用之羧酸,可以列舉出甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、蘋果酸、琥珀酸、庚二酸、氫硫乙酸、乙醛酸、氯乙酸、丙酮酸、乙醯乙酸、戊二酸等之飽和羧酸,或丙烯酸、甲基丙烯酸、巴豆酸、反丁烯二酸、順丁烯二酸、中康酸、檸康酸、烏頭酸等之不飽和羧酸、安息香酸類、甲苯甲酸、鄰苯二甲酸類、萘甲酸類、焦蜜石酸,以及萘二甲酸等之環狀不飽和羧酸等。
作為氧化劑,可以使用例如,過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水及銀(II)鹽、鐵(III)鹽,或其有機錯鹽等。
又,也可在切削液31中混合防蝕劑。藉由混合防蝕劑,可防止QFN基板10所含有之金屬腐蝕(溶出)。作為防蝕劑,較理想的是使用例如,分子內具有3個以上的氮原子,且具有稠環構造的芳香雜環化合物,或者是分子內具有4個以上之氮原子的芳香雜環化合物。此外,芳香雜環化合物宜含有羧基、磺酸基、羥基、烷氧基。具體來說,宜為四唑衍生物、1,2,3-三唑衍生物,以及1,2,4-三唑衍生物。
可以作為防蝕劑而使用的四唑衍生物,可以列舉
出在形成四唑環之氮原子上不具有取代基,且在四唑的第5位置上導入以下的基之四唑衍生物:選自於由磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基,或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代之烷基。
又,可以作為防蝕劑而使用的1,2,3-三唑衍生物,可以列舉出在形成1,2,3-三唑環之氮原子上不具有取代基,且在1,2,3-三唑的第4位置及/或第5位置上導入以下的基之三唑衍生物:選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基,或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
又,可以作為防蝕劑而使用的1,2,4-三唑衍生物,可以列舉出在形成1,2,4-三唑環之氮原子上不具有取代基,且在1,2,4-三唑的第2位置及/或第5位置上導入以下的基之三唑衍生物:選自於由磺酸基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基,或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
在上述之實施形態中,雖然針對適用於QFN基板10之例來說明本發明之切削方法,但被加工物並不受限於
此,本發明之切削方法也可適用於分割預定線上形成有TEG(Test Element Group)之晶圓,或如金屬板的僅以金屬構成之被加工物。
在實施本發明之切削方法時,較理想的是,依照被加工物的種類,由切削液供給噴嘴30供給切削液31,並且一邊在切削刀片16的徑向上對切削刀片16賦予超音波振動,一邊實施切削步驟。
可對切削刀片賦予超音波振動之切削單元的剖面圖顯示於圖3。切削單元12A之主軸殼體32具有鏜孔34,且是將主軸36可旋轉地收容於此鏜孔34中。
主軸36上配置有對切削刀片44賦予超音波振動的超音波振動器48。超音波振動器48是由在主軸36的軸向上被偏極化之環狀的壓電元件50,和裝設於該壓電元件50的兩側之偏極面上的環狀電極板52、54所構成。
壓電元件50是由鈦酸鋇、鋯鈦酸鉛,以及鉭酸鋰等之壓電陶瓷所構成。如此所構成之超音波振動器48於透過後述之電力供給機構對環狀電極板52、54施加預定頻率的交流電後,就可於主軸36上產生超音波振動。再者,也可以做成在主軸36的軸向上配置複數個超音波振動器48。
切削單元12A包括有旋轉驅動主軸36之電動馬達56。電動馬達56可由例如永磁式馬達所構成。電動馬達56是由裝設於形成在主軸36的中間部之馬達裝設部58上的永久磁石所形成的轉子60,和位於轉子60的外周側而配置於主軸殼體32上的定子線圈62所構成。
如此所構成之電動馬達56,透過後述之電力供給機構對定子線圈62施加交流電以使轉子60旋轉,並藉此使裝設有轉子60的主軸36旋轉。
切削單元12A還包括有,可對超音波振動器48施加交流電,並且對電動馬達56施加交流電之電力供給機構64。電力供給機構64包含配置於主軸36之一端(右端)上的旋轉變壓器66。
旋轉變壓器66具備有配置於主軸36之右端的受電機構68,和與受電機構68相向配置之供電機構70。受電機構68是由裝設於主軸36上的旋轉芯72,和捲繞在旋轉芯72上的受電線圈74所構成。
在如此所構成之受電機構68之受電線圈74的一端透過導電線連接有壓電元件50的電極板52,且在受電線圈74的另一端透過導電線連接有壓電元件50的電極板54。
供電機構70是由配置於受電機構68的外周側的定子鐵心76,和配置於定子鐵心76上之供電線圈78所構成。並可透過電氣配線80將交流電供給到如此所構成之供電機構70的供電線圈78。
電力供給機構64具備有交流電源82、被插入在交流電源82和旋轉變壓器66之供電線圈78之間的電壓調整機構84、用以調整供給到供電機構70之交流電的頻率的頻率調整機構86、用以控制電壓調整機構84及頻率調整機構86的控制機構88,以及將要賦予到切削刀片44之超音波振動的振幅等輸入控制機構88的輸入機構90。
交流電源82可透過控制電路94及電氣配線92將交流電供給到電動馬達56的定子線圈62。可以使用NF回路設計株式會社(NF Corporation)所提供的商品名為「DF-1905」的數位式信號發生器(Digital function generator)來作為頻率調整機構86。透過DF-1905,即可以在10Hz~500kHz的範圍內適當地調整頻率。
以下,針對切削單元12A的作用進行說明。由電力供給機構64將交流電供給到電動馬達56的定子線圈62。其結果,可使電動馬達56旋轉以旋轉主軸36,並使得利用螺絲46而被安裝於主軸36的前端部上的切削刀片44被帶動旋轉。44a是切削刀片44的刀刃。
另一方面,電力供給機構64可藉由控制機構88控制電壓供給機構84及頻率調整機構86,並將交流電控制在預定的電壓值,並且將交流電的頻率調整到預定頻率,而將預定頻率的交流電供給到構成旋轉變壓器66之供電機構70的供電線圈78。
當像這樣將預定頻率的交流電供給到供電線圈78時,即可透過旋轉之受電機構68的受電線圈74將預定頻率的交流電施加到超音波振動器48的電極板52和電極板54之間。
其結果,超音波振動器48會在徑向上反覆位移而形成超音波振動。此超音波振動會透過主軸36傳達至切削刀片44,使切削刀片44在徑向上形成超音波振動。
在本實施形態之切削方法中,是由切削液供給噴
嘴30供給切削液31,並且一邊對高速旋轉之切削刀片44在其徑向上施加超音波振動一邊切削被加工物。當以切削刀片切削具有金屬膜的藍寶石、碳化矽(SiC)、玻璃等的硬質脆性材料時,雖然在切削面會產生缺損,但是透過一邊對切削刀片賦予超音波振動一邊切削這類的被加工物的作法,就可以抑制在切削面上產生缺損。此外,藉由一邊供給切削液31一邊進行切削,可以抑制毛邊的產生。
10‧‧‧QFN基板
12‧‧‧切削單元
14‧‧‧主軸
16‧‧‧切削刀片
24‧‧‧金屬框架
25‧‧‧外周剩餘區域
25a‧‧‧非器件區域
26a、26b、26c‧‧‧器件區域
27‧‧‧切削預定線
28‧‧‧器件形成部
30‧‧‧切削液供給噴嘴
31‧‧‧切削液
X、Y、Z‧‧‧方向
Claims (3)
- 一種切削方法,是以切削刀片切削在切削預定位置上至少包含金屬之被加工物之切削方法,其特徵在於具備:一邊將切削液供給至切削刀片切入被加工物之加工點,一邊以該切削刀片切削被加工物之切削預定位置的切削步驟,且該切削液包含有機酸和氧化劑。
- 如請求項1之切削方法,其中,該切削液還含有防蝕劑。
- 如請求項1或2之切削方法,其中,是一邊對該切削刀片在該切削刀片的徑向上賦予超音波振動一邊實施該切削步驟。
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TWI781280B (zh) * | 2018-01-22 | 2022-10-21 | 日商迪思科股份有限公司 | 加工裝置 |
TWI803681B (zh) * | 2018-08-17 | 2023-06-01 | 日商迪思科股份有限公司 | 封裝基板的加工方法 |
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JP2018181907A (ja) * | 2017-04-04 | 2018-11-15 | 株式会社ディスコ | 加工方法 |
JP2018181901A (ja) * | 2017-04-04 | 2018-11-15 | 株式会社ディスコ | 加工方法 |
JP2018181903A (ja) * | 2017-04-04 | 2018-11-15 | 株式会社ディスコ | 加工方法 |
JP2018181909A (ja) * | 2017-04-04 | 2018-11-15 | 株式会社ディスコ | 加工方法 |
JP2018181908A (ja) | 2017-04-04 | 2018-11-15 | 株式会社ディスコ | 加工方法 |
JP6890885B2 (ja) * | 2017-04-04 | 2021-06-18 | 株式会社ディスコ | 加工方法 |
JP6824581B2 (ja) * | 2017-04-04 | 2021-02-03 | 株式会社ディスコ | 加工方法 |
JP6824582B2 (ja) * | 2017-04-04 | 2021-02-03 | 株式会社ディスコ | 加工方法 |
JP2018181899A (ja) * | 2017-04-04 | 2018-11-15 | 株式会社ディスコ | 板状被加工物の加工方法 |
JP2018181902A (ja) * | 2017-04-04 | 2018-11-15 | 株式会社ディスコ | 加工方法 |
JP2018181900A (ja) * | 2017-04-04 | 2018-11-15 | 株式会社ディスコ | 板状被加工物の加工方法 |
JP6949421B2 (ja) * | 2017-05-09 | 2021-10-13 | 株式会社ディスコ | 加工方法 |
JP6836491B2 (ja) * | 2017-11-07 | 2021-03-03 | 株式会社荏原製作所 | デバイスが形成された基板を個々のチップに分割するための方法および装置 |
JP6994363B2 (ja) * | 2017-11-22 | 2022-01-14 | 株式会社ディスコ | 切削装置 |
JP7150390B2 (ja) * | 2018-02-14 | 2022-10-11 | 株式会社ディスコ | 加工装置 |
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TWI781280B (zh) * | 2018-01-22 | 2022-10-21 | 日商迪思科股份有限公司 | 加工裝置 |
TWI803681B (zh) * | 2018-08-17 | 2023-06-01 | 日商迪思科股份有限公司 | 封裝基板的加工方法 |
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US9349647B2 (en) | 2016-05-24 |
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CN104934308B (zh) | 2020-03-17 |
US20150262881A1 (en) | 2015-09-17 |
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CN104934308A (zh) | 2015-09-23 |
KR102213729B1 (ko) | 2021-02-05 |
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