CN117621283A - 切削装置 - Google Patents

切削装置 Download PDF

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CN117621283A
CN117621283A CN202311065539.0A CN202311065539A CN117621283A CN 117621283 A CN117621283 A CN 117621283A CN 202311065539 A CN202311065539 A CN 202311065539A CN 117621283 A CN117621283 A CN 117621283A
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cutting
wafer
acid
rust inhibitor
unit
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竹之内研二
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
    • B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
    • B26D1/12—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis
    • B26D1/14—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis with a circular cutting member, e.g. disc cutter
    • B26D1/141—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis with a circular cutting member, e.g. disc cutter for thin material, e.g. for sheets, strips or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/08—Means for treating work or cutting member to facilitate cutting
    • B26D7/088—Means for treating work or cutting member to facilitate cutting by cleaning or lubricating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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Abstract

本发明提供切削装置，其能够防止切削屑附着于器件，并且能够防止电极氧化生锈。切削装置包含：切削液提供喷嘴，其与切削单元相邻地配设，向切削刀具与被加工物的接触点提供切削液；以及防锈剂提供喷嘴，其在Y轴方向上具有超过被加工物的宽度的长度，该防锈剂提供喷嘴提供防锈剂以确保形成于器件的电极不生锈。

Description

切削装置
技术领域
本发明涉及切削装置，其将正面上由分割预定线划分而形成有多个具有电极的器件的被加工物进行切削。
背景技术
将正面上由交叉的多条分割预定线划分而形成有IC、LSI等多个器件的晶片利用具有能够旋转的切削刀具的切削装置分割成各个器件芯片，分割后的器件芯片被用于移动电话、个人计算机等电子设备。
切削装置构成为包含：卡盘工作台，其对晶片进行保持；切削单元，其具有对保持于该卡盘工作台的晶片进行切削的切削刀具并且该切削刀具能够旋转；X轴进给机构，其将该卡盘工作台和该切削单元相对地在X轴方向上进行切削进给；以及Y轴进给机构，其将该卡盘工作台和切削单元相对地在与X轴方向垂直的Y轴方向上进行分度进给，该切削装置能够将晶片高精度地分割成各个器件芯片。
另外，当利用切削刀具对晶片进行切削时，切削屑(污染物)漂浮而附着于晶片的正面，使器件的品质降低，因此提出了如下的技术：向晶片的正面提供清洗水而冲洗切削屑，防止切削屑附着于器件芯片(例如，参照专利文献1)。
专利文献1：日本特开2014-121738号公报
另外，当对QFN(Quad-Flat-Non leaded package：四方扁平无引脚封装)那样的封装基板进行切削时，存在构成器件的电极垫随着时间经过而氧化生锈导致器件的品质降低的问题。
这样的问题不限于对形成QFN的封装基板进行切削的情况，是在对形成有正面上配设有多个电极的器件的半导体晶片进行切削的情况下也可能产生的问题。
发明内容
因此，本发明的目的在于提供切削装置，其能够防止切削屑附着于器件，并且能够防止器件的电极氧化生锈。
根据本发明，提供切削装置，其中，该切削装置具有：卡盘工作台，其对被加工物进行保持，该被加工物在正面上由交叉的多条分割预定线划分而形成有多个具有电极的器件；切削单元，其具有对保持于该卡盘工作台的该被加工物进行切削的切削刀具并且该切削刀具能够旋转；X轴进给机构，其将该卡盘工作台和该切削单元相对地在X轴方向上进行切削进给；Y轴进给机构，其将该卡盘工作台和该切削单元相对地在与X轴方向垂直的Y轴方向上进行分度进给；切削液提供喷嘴，其与该切削单元相邻地配设，向该切削刀具与该被加工物的接触点提供切削液；以及防锈剂提供喷嘴，其在Y轴方向上具有超过该被加工物的宽度的长度，该防锈剂提供喷嘴提供防锈剂以确保形成于该器件的该电极不生锈。
优选该切削液提供喷嘴提供纯水或者提供有机酸与氧化剂的混合液。
根据本发明的切削装置，即使对QFN等封装基板进行切削后经过时间，也能够防止器件的电极氧化生锈，从而解决导致器件的品质降低的问题。
附图说明
图1是本发明实施方式的切削装置的整体立体图。
图2是将图1中记载的切削装置中配设的切削单元放大而示出的立体图。
图3是示出图2所示的防锈剂提供喷嘴和晶片的平面图。
图4是示出切削加工的实施方式的立体图。
图5是图4所示的实施方式的主视图。
标号说明
1：切削装置；2：装置壳体；4：盒；5：暂放台；6：搬出搬入单元；7：搬送单元；8：保持单元；8a：卡盘工作台；8b：保持面；9：切削单元；91：主轴壳体；92：主轴；93：切削刀具；94：罩体；94a：第1罩部件；94b：第2罩部件；94c：刀具检测块；95：切削液提供喷嘴；95a：切削液导入口；95b：喷射口；96：防锈剂提供喷嘴；96a：主体部；96b：喷射孔；96c：防锈剂导入口；10：清洗单元；11：清洗搬送单元；12：拍摄单元；13：防锈剂提供单元；13a：防锈剂贮存容器；13b：防锈剂路径；13c：开闭阀；14：切削液提供单元；14a：切削液贮存容器；14b：切削液路径；14c：开闭阀；100：切削槽；L1：防锈剂；L2：切削液；D：器件；W：晶片；Wa：正面；We：分割预定线。
具体实施方式
以下，参照附图对本发明实施方式的切削装置进行详细说明。
在图1中示出本实施方式的切削装置1的整体立体图。被图示的切削装置1加工的被加工物是形成有器件D的硅(Si)的晶片W，该器件D在正面上配设有多个电极(省略图示)。该晶片W借助粘接带T而保持于环状框架F。
切削装置1具有：盒4(用双点划线表示)，其对多个晶片W进行收纳；暂放台5，盒4中收纳的晶片W被搬出并暂放于该暂放台5；搬出搬入单元6，其将晶片W从盒4搬出至暂放台5，并且将晶片W从暂放台5搬入盒4中；搬送单元7，其将搬出至暂放台5的晶片W吸附而进行旋转，将晶片W载置于保持单元8的卡盘工作台8a的保持面8b；切削单元9，其对吸引保持于卡盘工作台8a的保持面8b的晶片W进行切削；清洗单元10(省略详细说明)，其对被切削单元9切削加工的晶片W进行清洗；清洗搬送单元11，其将已切削加工的晶片W从卡盘工作台8a搬送至清洗单元10；拍摄单元12，其对卡盘工作台8a上的晶片W进行拍摄；以及省略图示的控制器。盒4载置于按照能够通过未图示的升降单元而上下移动的方式配设的盒台4a上，在利用搬出搬入单元6从盒4中搬出晶片W时，盒4的高度能够适当地调整。在装置壳体2内配设有将保持单元8的卡盘工作台8a在X轴方向上进行加工进给的X轴进给机构和将切削单元9在与X轴方向垂直的Y轴方向上进行分度进给的Y轴进给机构(均省略图示)。
参照图2，更具体地说明图1所示的切削装置1中配设的切削单元9。图2是将图1所示的切削装置1的切削单元9的主要部分和移动到切削单元9的正下方的保持单元8放大示出的立体图。根据图2能够理解，切削单元9具有：主轴壳体91，其沿Y轴方向延伸；主轴92，其被主轴壳体91支承为旋转自如；环状的切削刀具93，其以装卸自如的方式支承于主轴92的前端侧；罩体94，其安装于主轴壳体91的前端，覆盖该切削刀具93；切削液提供喷嘴95(虚线所示)，其向切削刀具93与晶片W的接触点即切削加工位置提供切削液L2；以及防锈剂提供喷嘴96，其提供防锈剂L1(随后详细叙述)，该防锈剂L1发挥作用以确保器件D的电极不生锈。另外，主轴92通过配设于主轴92的后端侧的省略图示的电动机而被旋转驱动。另外，本实施方式的切削单元9除了上述的Y轴进给机构以外，还具有使切削单元9在Z轴方向上移动而进行切入进给的切入进给机构(省略图示)。
如图2所示，罩体94具有：第1罩部件94a，其固定于主轴壳体91的前端；第2罩部件94b，其通过螺钉而固定于第1罩部件94a的前表面；以及切削刀具检测块94c，其从第1罩部件94a的上表面通过螺钉而固定。在切削刀具检测块94c中配设有用于检测切削刀具93的外周端部侧的磨损和缺损的刀具传感器(省略图示)。
防锈剂提供喷嘴96与切削单元9相邻地配设，在本实施方式中，防锈剂提供喷嘴96具有：中空圆筒状的主体部96a，其沿着Y轴方向配设；多个喷射孔96b，它们在该主体部96a中朝向切削刀具93侧下方配设，朝向卡盘工作台8a所保持的晶片W喷射防锈剂L1；以及防锈剂导入口96c，其形成于该主体部96a的里侧端部。在防锈剂导入口96c上连接有提供防锈剂L1的防锈剂提供单元13。防锈剂提供喷嘴96通过省略图示的固定部件而固定于罩体94或主轴壳体91，从而与切削单元9一体地移动。
防锈剂提供单元13具有：贮存防锈剂L1的防锈剂贮存容器13a；将防锈剂贮存容器13a与防锈剂导入口96c连接的防锈剂路径13b；以及将防锈剂路径13b开闭的开闭阀13c。该防锈剂贮存容器13a具有省略图示的泵，通过使该泵进行动作并且打开开闭阀13c，能够从防锈剂提供喷嘴96的喷射孔96b喷射防锈剂L1。
图2中虚线所示的切削液提供喷嘴95配设于切削单元9，在本实施方式中形成于第1罩部件94a内，将从切削液导入口95a导入的切削液L2朝向切削刀具93与被切削加工的晶片W的接触点提供。在切削液导入口95a上连接切削液提供单元14。切削液提供单元14具有：贮存切削液L2的切削液贮存容器14a；将切削液贮存容器14a与切削液导入口95a连接的切削液路径14b；以及将切削液路径14b开闭的开闭阀14c。该切削液贮存容器14a具有省略图示的泵，通过使该泵进行动作并且打开开闭阀14c，能够从切削液提供喷嘴95的喷射口95b喷射切削液L2。
以下对本实施方式的防锈剂L1进行说明。本发明中采用的防锈剂L1是防止将被加工物(在本实施方式中为硅晶片W)切削而分割得到的器件D的电极氧化生锈的液体，例如可以采用如下成分的防锈剂。
作为可以用作上述防锈剂L1的1,2,3-三唑衍生物，可以举出在形成1,2,3-三唑环的氮原子上不具有取代基，并且在1,2,3-三唑的4位和/或5位上导入有选自由羟基、羧基、磺基、氨基、氨基甲酰基、苯酰胺基、氨磺酰基和磺酰胺基组成的组中的取代基，或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、苯酰胺基、氨磺酰基和磺酰胺基组成的组中的至少1种取代基取代的烷基或芳基的物质。
另外，作为可以用作防锈剂L1的1,2,4-三唑衍生物，可以举出在形成1,2,4-三唑环的氮原子上不具有取代基，并且在1,2,4-三唑的2位和/或5位上导入有选自由磺基、氨基甲酰基、苯酰胺基、氨磺酰基和磺酰胺基组成的组中的取代基，或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、苯酰胺基、氨磺酰基和磺酰胺基组成的组中的至少1种取代基取代的烷基或芳基的物质。
上述的防锈剂提供喷嘴96在切削加工时提供防锈剂L1，以确保卡盘工作台8a所保持的晶片W的器件D的电极不氧化，关于防锈剂提供喷嘴96和上述的卡盘工作台8a所保持的晶片W，设定成满足根据图3说明的以下的条件。另外，图3是示出保持于上述保持单元8的卡盘工作台8a的晶片W和配设于切削单元9的防锈剂提供喷嘴96的平面图，为了便于说明，将切削单元9的除防锈剂提供喷嘴96以外的结构(罩体94、主轴壳体91等)省略。晶片W是在正面Wa上由分割预定线We划分而形成有多个器件D的晶片，晶片W借助粘接带T而保持于环状框架F，该环状框架F具有能够收纳晶片W的开口Fa。
从图3的平面图能够理解，防锈剂提供喷嘴96沿着Y轴方向配设，在Y轴方向上具有超过被加工物即晶片W的Y轴方向的宽度P1的长度。另外，如图3所示，形成于防锈剂提供喷嘴96的主体部96a的多个喷射孔96b设定成由位于一侧端部的喷射孔96b和位于另一侧端部的喷射孔96b规定的长度P2比晶片W的宽度P1长。并且，按照从喷射孔96b向保持于卡盘工作台8a的晶片W的宽度方向的整个区域提供防锈剂L1的方式设定形成多个喷射孔96b的数量和间隔。此外，在上述的实施方式中，在防锈剂提供喷嘴96上形成多个喷射孔96b而提供防锈剂L1，但本发明并不限于此，也可以从沿着防锈剂提供喷嘴96的长度方向形成的缝提供防锈剂L1。此时的缝的长度按照超过上述晶片W的宽度P1的长度的尺寸设定。上述的防锈剂提供单元13、切削液提供单元14以及各动作部由上述的控制器控制。
以下对本实施方式的切削液L2进行说明。在本发明中采用的切削液L2是从上述切削液提供喷嘴95提供至切削刀具93与晶片W的接触点的液体，例如能够采用纯水或者以下说明的成分的有机酸与氧化剂的混合液。
作为可以用作构成从切削液提供喷嘴95提供的混合液的有机酸的氨基酸，可以举出甘氨酸、二羟基乙基甘氨酸、双甘氨肽、羟基乙基甘氨酸、N-甲基甘氨酸、β-丙氨酸、L-丙氨酸、L-2-氨基丁酸、L-正缬氨酸、L-缬氨酸、L-亮氨酸、L-正亮氨酸、L-别异亮氨酸、L-异亮氨酸、L-苯丙氨酸、L-脯氨酸、肌氨酸、L-鸟氨酸、L-赖氨酸、牛磺酸、L-丝氨酸、L-苏氨酸、L-别苏氨酸、L-高丝氨酸、L-甲状腺素、L-酪氨酸、3，5-二碘-L-酪氨酸、β-(3，4-二羟基苯基)-L-丙氨酸、4-羟基-L-脯氨酸、L-半胱氨酸、L-甲硫氨酸、L-乙硫氨酸、L-羊毛硫氨酸、L-胱硫醚、L-胱氨酸、L-磺基丙氨酸、L-谷氨酸、L-天冬氨酸、S-(羧甲基)-L-半胱氨酸、4-氨基丁酸、L-天冬酰胺、L-谷氨酰胺、氮杂丝氨酸、L-刀豆氨酸、L-瓜氨酸、L-精氨酸、δ-羟基-L-赖氨酸、肌酸、L-犬尿氨酸、L-组氨酸、1-甲基-L-组氨酸、3-甲基-L-组氨酸、L-色氨酸、放线菌素C1、麦角硫因、蜂毒明肽、血管紧张素I、血管紧张素II和抗痛素等。其中，优选甘氨酸、L-丙氨酸、L-脯氨酸、L-组氨酸、L-赖氨酸、二羟基乙基甘氨酸等。
另外，作为可以用作构成上述混合液的有机酸的氨基多元酸，可以举出亚氨基二乙酸、次氮基三乙酸、二亚乙基三胺五乙酸、乙二胺四乙酸、羟基乙基亚氨基二乙酸、次氮基三亚甲基膦酸、乙二胺-N，N，N'，N'-四亚甲基磺酸、1，2-二氨基丙烷四乙酸、乙二醇醚二胺四乙酸、反式环己烷二胺四乙酸、乙二胺邻羟基苯基乙酸、乙二胺二琥珀酸(SS体)、β-丙氨酸二乙酸、N-(2-羧酸根乙基(カルボキシラートエチル))-L-天冬氨酸、N，N'-双(2-羟基苄基)乙二胺-N，N'-二乙酸等。
另外，作为可以用作构成所述混合液的有机酸的羧酸，可以举出甲酸、乙醇酸、丙酸、乙酸、丁酸、己酸、草酸、丙二酸、戊二酸、己二酸、苹果酸、琥珀酸、庚二酸、巯基乙酸、乙醛酸、氯乙酸、丙酮酸、乙酰乙酸、戊二酸等饱和羧酸；丙烯酸、甲基丙烯酸、巴豆酸、富马酸、马来酸、中康酸、柠康酸、乌头酸等不饱和羧酸；以及苯甲酸类、甲苯甲酸、邻苯二甲酸类、萘甲酸类、均苯四酸、萘二甲酸等环状不饱和羧酸等。
作为构成从切削液提供喷嘴95提供的混合液的氧化剂，例如可以使用过氧化氢、过氧化物、硝酸盐、碘酸盐、高碘酸盐、次氯酸盐、亚氯酸盐、氯酸盐、高氯酸盐、过硫酸盐、重铬酸盐、高锰酸盐、铈酸盐、钒酸盐、臭氧水和银(II)盐、铁(III)盐及其有机络盐等。
如上所述，通过使用有机酸与氧化剂的混合液作为切削液，能够发挥如下的功能：确保切削加工时向卡盘工作台8a所保持的晶片W的正面Wa飞散的切削屑不附着，并且良好地去除通过切削加工而各个分割的器件D上形成的毛刺等而避免器件D的品质降低。另外，也可以在上述切削液L2中混合上述防锈剂L1。
本实施方式的切削装置1具有大致如上所述的结构，以下，对通过切削装置1对作为被加工物的晶片W进行切削加工的方式进行说明。另外，本发明的被加工物是上述那样的板状的硅的晶片W，多个器件D形成在由分割预定线We划分的正面Wa上。
在利用根据图1进行了说明的切削装置1的切削单元9实施切削加工时，首先，利用搬出搬入单元6将收纳于盒4中的晶片W搬出至暂放台5，利用搬送单元7将晶片W搬送至图1中定位于搬出搬入位置的卡盘工作台8a上。在将晶片W载置于卡盘工作台8a并进行吸引保持之后，利用省略图示的X轴进给机构将晶片W定位于拍摄单元12的正下方而进行拍摄，对作为应切削加工的区域的晶片W的规定的分割预定线We进行检测而使该规定的分割预定线We与X轴方向对齐。接着，实施即将开始切削的分割预定线We与切削单元9的切削刀具93的对位，将切削单元9定位于规定的加工开始位置。
接着，如图4所示，使切削单元9的切削刀具93向R1所示的方向高速旋转并且定位于在与X轴方向对齐的第1方向上延伸的分割预定线We，使上述的防锈剂提供单元13和切削液提供单元14进行动作，从防锈剂提供喷嘴96和切削液提供喷嘴95喷射防锈剂L1和切削液L2。然后，使上述切入进给机构进行动作而使切削刀具93从晶片W的正面Wa侧向Z轴方向切入，并且使上述的X轴进给机构进行动作而将晶片W在图中箭头X所示的X轴方向上进行加工进给而形成切削槽100。另外，在本实施方式中，对选择混合了上述有机酸和氧化剂的混合液作为切削液L2并从切削液提供喷嘴95进行提供的情况进行说明，但切削液L2也可以是纯水。
图5中示出形成上述切削槽100的切削加工的实施方式的主视图。在图5中，为了便于说明，省略了罩体94的第2罩部件94b和刀具检测块94c，并且以剖面示出形成有切削液提供喷嘴95的第1罩部件94a的一部分。
如果形成了上述的切削槽100，则将切削单元9的切削刀具93分度进给至在Y轴方向上与形成了该切削槽100的分割预定线We相邻的未加工的分割预定线We上，与上述同样地形成切削槽100。通过反复进行这些动作，沿着在第1方向上延伸的所有分割预定线We形成切削槽100。接着，使晶片W旋转90度，使在与之前形成有切削槽100的第1方向垂直的第2方向上延伸的分割预定线We与X轴方向对齐，一边提供上述的防锈剂L1和切削液L2，一边对在第2方向上延伸的所有分割预定线We实施切削加工，沿着形成于晶片W的所有分割预定线We形成切削槽100。由此，晶片W的器件D被分割成各个器件芯片。
从图4、图5可知，从防锈剂提供喷嘴96向晶片W的正面Wa上提供防锈剂L1，因此能够防止构成器件D的电极氧化生锈，从而解决导致器件D的品质降低的问题。另外，从切削液提供喷嘴95朝向切削刀具93与晶片W的接触点提供切削液L2，另外如上所述，在切削液L2是有机酸与氧化剂的混合液的情况下，按照向晶片W的正面Wa飞散的切削屑不会附着在晶片W上的方式发挥作用，并且能够良好地去除切削加工时形成于器件D的毛刺等。
另外，通过本发明切削的被加工物不限于上述实施方式的晶片W。例如，也可以是被称为QFN(四方扁平无引脚封装)的配设有多个器件的封装基板。利用上述切削装置1沿着分割预定线对该基板进行切削，从而电极在各个分割的器件的外周露出。即使在将这样的基板分割成各个器件的情况下，也能够防止通过切削加工而分割的器件的电极氧化生锈，从而解决导致该器件的品质降低的问题。

Claims (2)

1.一种切削装置，其中，
该切削装置具有：
卡盘工作台，其对被加工物进行保持，该被加工物在正面上由交叉的多条分割预定线划分而形成有多个具有电极的器件；
切削单元，其具有对保持于该卡盘工作台的该被加工物进行切削的切削刀具并且该切削刀具能够旋转；
X轴进给机构，其将该卡盘工作台和该切削单元相对地在X轴方向上进行切削进给；
Y轴进给机构，其将该卡盘工作台和该切削单元相对地在与X轴方向垂直的Y轴方向上进行分度进给；
切削液提供喷嘴，其与该切削单元相邻地配设，向该切削刀具与该被加工物的接触点提供切削液；以及
防锈剂提供喷嘴，其在Y轴方向上具有超过该被加工物的宽度的长度，该防锈剂提供喷嘴提供防锈剂以确保形成于该器件的该电极不生锈。
2.根据权利要求1所述的切削装置，其中，
该切削液提供喷嘴提供纯水或者提供有机酸与氧化剂的混合液。
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