KR102190861B1 - 스크라이브 방법 및 스크라이브 장치 - Google Patents

스크라이브 방법 및 스크라이브 장치 Download PDF

Info

Publication number
KR102190861B1
KR102190861B1 KR1020140013835A KR20140013835A KR102190861B1 KR 102190861 B1 KR102190861 B1 KR 102190861B1 KR 1020140013835 A KR1020140013835 A KR 1020140013835A KR 20140013835 A KR20140013835 A KR 20140013835A KR 102190861 B1 KR102190861 B1 KR 102190861B1
Authority
KR
South Korea
Prior art keywords
scribing
angle
scribe
tip
scribing wheel
Prior art date
Application number
KR1020140013835A
Other languages
English (en)
Korean (ko)
Other versions
KR20140114285A (ko
Inventor
켄지 무라카미
마사카즈 타케다
토모코 키노시타
Original Assignee
미쓰보시 다이야몬도 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰보시 다이야몬도 고교 가부시키가이샤 filed Critical 미쓰보시 다이야몬도 고교 가부시키가이샤
Publication of KR20140114285A publication Critical patent/KR20140114285A/ko
Application granted granted Critical
Publication of KR102190861B1 publication Critical patent/KR102190861B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
KR1020140013835A 2013-03-18 2014-02-06 스크라이브 방법 및 스크라이브 장치 KR102190861B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-055346 2013-03-18
JP2013055346A JP6056575B2 (ja) 2013-03-18 2013-03-18 スクライブ方法及びスクライブ装置

Publications (2)

Publication Number Publication Date
KR20140114285A KR20140114285A (ko) 2014-09-26
KR102190861B1 true KR102190861B1 (ko) 2020-12-14

Family

ID=51552167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140013835A KR102190861B1 (ko) 2013-03-18 2014-02-06 스크라이브 방법 및 스크라이브 장치

Country Status (4)

Country Link
JP (1) JP6056575B2 (ja)
KR (1) KR102190861B1 (ja)
CN (1) CN104064518B (ja)
TW (1) TWI589538B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101725733B1 (ko) 2016-07-12 2017-04-11 엘지디스플레이 주식회사 기판 가공 장치 및 이를 이용한 표시장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004271945A (ja) * 2003-03-10 2004-09-30 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置の製造方法およびその装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785906B2 (ja) * 1994-02-14 1998-08-13 日本板硝子株式会社 ガラス板の切断方法
TW308581B (ja) * 1995-11-06 1997-06-21 Mitsuboshi Diamond Kogyo Kk
JPH09278474A (ja) * 1996-04-08 1997-10-28 Nippon Sheet Glass Co Ltd ガラスホイルカッタおよびガラス板切断方法
JP2973354B2 (ja) 1996-04-18 1999-11-08 日本板硝子株式会社 ディスク用ガラス基板
US6099543A (en) * 1998-03-18 2000-08-08 Smith; Thomas C. Ophthalmic surgical blade
JP2001053036A (ja) * 1999-08-16 2001-02-23 Toyo Commun Equip Co Ltd ダイシングブレード及び圧電素板
JP4710148B2 (ja) * 2001-02-23 2011-06-29 パナソニック株式会社 窒化物半導体チップの製造方法
JP2005093503A (ja) * 2003-09-12 2005-04-07 Hitachi Cable Ltd ダイシング方法
JP2005129741A (ja) * 2003-10-24 2005-05-19 Tokyo Seimitsu Co Ltd ダイシングブレード及びダイシング方法
JP2006237375A (ja) * 2005-02-25 2006-09-07 Toshiba Corp ダイシング方法
JP4346598B2 (ja) * 2005-10-06 2009-10-21 株式会社東芝 化合物半導体素子及びその製造方法
KR20100065632A (ko) * 2008-12-08 2010-06-17 세메스 주식회사 스크라이브 휠
JP5832064B2 (ja) * 2009-01-30 2015-12-16 三星ダイヤモンド工業株式会社 カッター及びそれを用いた脆性材料基板の分断方法
JP5080551B2 (ja) * 2009-12-24 2012-11-21 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP5123996B2 (ja) * 2010-07-08 2013-01-23 三星ダイヤモンド工業株式会社 溝付きカッターホイール

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004271945A (ja) * 2003-03-10 2004-09-30 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置の製造方法およびその装置

Also Published As

Publication number Publication date
TWI589538B (zh) 2017-07-01
KR20140114285A (ko) 2014-09-26
CN104064518A (zh) 2014-09-24
JP2014183101A (ja) 2014-09-29
JP6056575B2 (ja) 2017-01-11
CN104064518B (zh) 2019-03-19
TW201437162A (zh) 2014-10-01

Similar Documents

Publication Publication Date Title
JP5179068B2 (ja) 化合物半導体素子の製造方法
JP5119463B2 (ja) 発光素子及びその製造方法
CN102714152B (zh) 功能元件及其制造方法
WO2013176089A1 (ja) 加工対象物切断方法、加工対象物、及び、半導体素子
US20190035684A1 (en) Method for manufacturing silicon carbide semiconductor device
JPH0888201A (ja) サファイアを基板とする半導体素子
JP2013089622A (ja) 半導体基板のブレイク方法
JP2016207908A (ja) 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP6244431B2 (ja) スクライブ装置
JP5493275B2 (ja) 半導体装置の製造方法
JP6455166B2 (ja) 半導体ウエハおよび半導体チップの製造方法
CN104508799B (zh) 加工对象物切断方法
TW200524185A (en) Method for production of semiconductor chip and semiconductor chip
KR102190861B1 (ko) 스크라이브 방법 및 스크라이브 장치
KR20150044374A (ko) 탄성 지지판, 파단장치 및 분단방법
KR101192526B1 (ko) 웨이퍼로부터 반도체 칩을 제조하기 위한 방법 및 반도체 구성 요소
JP4594707B2 (ja) 半導体チップ製造方法
KR102587182B1 (ko) 판상물의 가공 방법
JP2013161944A (ja) ダイシング方法
JP2014086446A (ja) ＳｉＣウェハの切断方法
KR102453527B1 (ko) 커터 휠
JP2005088455A (ja) ダイヤモンドスクライバー
JP5989422B2 (ja) 半導体装置の製造方法
JP2020151929A (ja) 脆性材料基板のブレイク装置およびブレイク方法
US20240139883A1 (en) Method for processing gallium oxide substrate

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
X091 Application refused [patent]
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant