KR102169835B1 - 연마액, 화학적 기계적 연마 방법 - Google Patents

연마액, 화학적 기계적 연마 방법 Download PDF

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Publication number
KR102169835B1
KR102169835B1 KR1020187036008A KR20187036008A KR102169835B1 KR 102169835 B1 KR102169835 B1 KR 102169835B1 KR 1020187036008 A KR1020187036008 A KR 1020187036008A KR 20187036008 A KR20187036008 A KR 20187036008A KR 102169835 B1 KR102169835 B1 KR 102169835B1
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KR
South Korea
Prior art keywords
polishing
polishing liquid
acid
group
polished
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KR1020187036008A
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English (en)
Korean (ko)
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KR20190007025A (ko
Inventor
테츠야 카미무라
Original Assignee
후지필름 가부시키가이샤
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Publication of KR20190007025A publication Critical patent/KR20190007025A/ko
Application granted granted Critical
Publication of KR102169835B1 publication Critical patent/KR102169835B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020187036008A 2016-06-22 2017-06-01 연마액, 화학적 기계적 연마 방법 KR102169835B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-123235 2016-06-22
JP2016123235 2016-06-22
PCT/JP2017/020409 WO2017221660A1 (ja) 2016-06-22 2017-06-01 研磨液、化学的機械的研磨方法

Publications (2)

Publication Number Publication Date
KR20190007025A KR20190007025A (ko) 2019-01-21
KR102169835B1 true KR102169835B1 (ko) 2020-10-26

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KR1020187036008A KR102169835B1 (ko) 2016-06-22 2017-06-01 연마액, 화학적 기계적 연마 방법

Country Status (5)

Country Link
JP (1) JP6761469B2 (zh)
KR (1) KR102169835B1 (zh)
CN (1) CN109312211A (zh)
TW (1) TWI744337B (zh)
WO (1) WO2017221660A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6924616B2 (ja) * 2017-05-25 2021-08-25 ニッタ・デュポン株式会社 研磨用スラリー
JP7002354B2 (ja) * 2018-01-29 2022-02-04 ニッタ・デュポン株式会社 研磨用組成物
US20220049125A1 (en) * 2018-12-12 2022-02-17 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
CN109746771B (zh) * 2019-02-14 2020-11-20 南京航空航天大学 一种CsPbX3无机钙钛矿晶体材料的抛光方法
CN113993968A (zh) * 2019-06-17 2022-01-28 福吉米株式会社 研磨用组合物
JP7368997B2 (ja) * 2019-09-30 2023-10-25 株式会社フジミインコーポレーテッド 研磨用組成物
CN114227527A (zh) * 2020-09-09 2022-03-25 中国科学院微电子研究所 研磨试剂及其制备方法、化学机械研磨方法及其装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008095078A1 (en) 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5176078A (en) * 1974-12-23 1976-07-01 Hitachi Ltd Handaboshokumakuo hodokoshita handotaisochi
KR100661273B1 (ko) * 2005-04-28 2006-12-26 테크노세미켐 주식회사 고단차 산화막의 평탄화를 위한 화학기계적 연마조성물
JP5133874B2 (ja) * 2005-04-28 2013-01-30 テクノ セミケム シーオー．， エルティーディー． 高段差酸化膜の平坦化のための自動研磨停止機能を有する化学機械的研磨組成物
US20090302266A1 (en) * 2006-04-03 2009-12-10 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, and kit for preparing aqueous dispersion for chemical mechanical polishing
EP2071615B1 (en) * 2006-10-06 2012-07-18 JSR Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device
JP5333742B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5176078B2 (ja) 2008-04-15 2013-04-03 日立化成株式会社 金属膜用研磨液及びこれを用いた研磨方法
JP2009105455A (ja) * 2009-02-10 2009-05-14 Hitachi Chem Co Ltd 素子分離形成方法
WO2013152894A1 (de) * 2012-04-13 2013-10-17 Boehringer Ingelheim International Gmbh Zerstäuber mit kodiermitteln

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008095078A1 (en) 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
The International Journal of Manufacturing Technology, 2003, 22.5-6: 401-409
Wear, 2010, 268.5-6: 837-844

Also Published As

Publication number Publication date
JPWO2017221660A1 (ja) 2019-04-25
JP6761469B2 (ja) 2020-09-23
CN109312211A (zh) 2019-02-05
KR20190007025A (ko) 2019-01-21
TWI744337B (zh) 2021-11-01
TW201805399A (zh) 2018-02-16
WO2017221660A1 (ja) 2017-12-28

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