KR102162437B1 - 발광 소자 및 이를 포함하는 발광 소자 패키지 - Google Patents

발광 소자 및 이를 포함하는 발광 소자 패키지 Download PDF

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KR102162437B1
KR102162437B1 KR1020140058603A KR20140058603A KR102162437B1 KR 102162437 B1 KR102162437 B1 KR 102162437B1 KR 1020140058603 A KR1020140058603 A KR 1020140058603A KR 20140058603 A KR20140058603 A KR 20140058603A KR 102162437 B1 KR102162437 B1 KR 102162437B1
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light emitting
electrode
layer
width
semiconductor layer
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Korean (ko)
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KR20150131641A (ko
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문지형
김성균
나민규
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엘지이노텍 주식회사
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Priority to KR1020140058603A priority Critical patent/KR102162437B1/ko
Priority to CN201510005574.2A priority patent/CN105098041B/zh
Priority to US14/606,499 priority patent/US9368691B2/en
Priority to EP15153484.9A priority patent/EP2944862B1/en
Priority to JP2015078920A priority patent/JP2015220456A/ja
Publication of KR20150131641A publication Critical patent/KR20150131641A/ko
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Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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KR1020140058603A 2014-05-15 2014-05-15 발광 소자 및 이를 포함하는 발광 소자 패키지 Active KR102162437B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020140058603A KR102162437B1 (ko) 2014-05-15 2014-05-15 발광 소자 및 이를 포함하는 발광 소자 패키지
CN201510005574.2A CN105098041B (zh) 2014-05-15 2015-01-06 发光器件和包括发光器件的发光器件封装
US14/606,499 US9368691B2 (en) 2014-05-15 2015-01-27 Light emitting device and light emitting device package including the same
EP15153484.9A EP2944862B1 (en) 2014-05-15 2015-02-02 Light emitting device and lighting device including the light emitting device
JP2015078920A JP2015220456A (ja) 2014-05-15 2015-04-08 発光素子及びそれを含む照明装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140058603A KR102162437B1 (ko) 2014-05-15 2014-05-15 발광 소자 및 이를 포함하는 발광 소자 패키지

Publications (2)

Publication Number Publication Date
KR20150131641A KR20150131641A (ko) 2015-11-25
KR102162437B1 true KR102162437B1 (ko) 2020-10-07

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KR1020140058603A Active KR102162437B1 (ko) 2014-05-15 2014-05-15 발광 소자 및 이를 포함하는 발광 소자 패키지

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US (1) US9368691B2 (enExample)
EP (1) EP2944862B1 (enExample)
JP (1) JP2015220456A (enExample)
KR (1) KR102162437B1 (enExample)
CN (1) CN105098041B (enExample)

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US10892390B2 (en) * 2016-02-05 2021-01-12 Lg Innotek Co., Ltd. Light-emitting element and light-emitting element package including the same
KR102263041B1 (ko) * 2016-02-26 2021-06-09 삼성전자주식회사 멀티 컬러를 구현할 수 있는 발광 소자
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KR20180073866A (ko) * 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102737500B1 (ko) * 2016-12-27 2024-12-04 삼성전자주식회사 발광소자 패키지
WO2018212630A1 (ko) 2017-05-19 2018-11-22 엘지이노텍 주식회사 레이저 다이오드
US11705440B2 (en) * 2017-06-26 2023-07-18 PlayNitride Inc. Micro LED display panel
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CN110823845B (zh) * 2018-08-08 2021-05-25 京东方科技集团股份有限公司 光谱仪及其制作方法
US11508876B2 (en) * 2018-12-31 2022-11-22 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
JP6811293B1 (ja) * 2019-08-21 2021-01-13 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
US12426410B2 (en) * 2019-08-28 2025-09-23 Tslc Corporation Semiconductor components and semiconductor structures and methods of fabrication
CN112687775B (zh) 2019-10-18 2021-11-16 厦门三安光电有限公司 一种发光二极管
US20210296530A1 (en) * 2020-03-17 2021-09-23 Magna Electronics Inc. Vehicular display element comprising high density mini-pixel led array
WO2021187891A1 (ko) * 2020-03-18 2021-09-23 엘지이노텍 주식회사 표면발광 레이저소자 및 이를 구비한 거리측정장치
CN113707036A (zh) * 2020-05-22 2021-11-26 北京芯海视界三维科技有限公司 发光模组、显示模组、显示屏及显示器
KR102955389B1 (ko) * 2020-07-06 2026-04-22 서울바이오시스 주식회사 발광 장치 및 그것을 포함하는 제품
WO2022190390A1 (ja) * 2021-03-12 2022-09-15 オリンパスメディカルシステムズ株式会社 光源装置
WO2023070520A1 (zh) * 2021-10-29 2023-05-04 京东方科技集团股份有限公司 一种发光芯片及其制备方法、发光装置
JP7810506B2 (ja) * 2021-12-01 2026-02-03 ルミレッズ リミテッド ライアビリティ カンパニー 中心でピークに達する表面輝度を有するｌｅｄダイ
JP2024122628A (ja) * 2023-02-28 2024-09-09 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
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CN117038833A (zh) * 2023-08-15 2023-11-10 江西乾照光电有限公司 一种led芯片及其制备方法

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Also Published As

Publication number Publication date
US9368691B2 (en) 2016-06-14
US20150333230A1 (en) 2015-11-19
JP2015220456A (ja) 2015-12-07
EP2944862B1 (en) 2021-11-03
KR20150131641A (ko) 2015-11-25
CN105098041A (zh) 2015-11-25
CN105098041B (zh) 2019-11-12
EP2944862A1 (en) 2015-11-18

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