CN105098041B - 发光器件和包括发光器件的发光器件封装 - Google Patents

发光器件和包括发光器件的发光器件封装 Download PDF

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Publication number
CN105098041B
CN105098041B CN201510005574.2A CN201510005574A CN105098041B CN 105098041 B CN105098041 B CN 105098041B CN 201510005574 A CN201510005574 A CN 201510005574A CN 105098041 B CN105098041 B CN 105098041B
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China
Prior art keywords
light emitting
emitting device
width
electrode
layer
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Chinese (zh)
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CN105098041A (zh
Inventor
文智炯
金省均
罗珉圭
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Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
CN201510005574.2A 2014-05-15 2015-01-06 发光器件和包括发光器件的发光器件封装 Active CN105098041B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2014-0058603 2014-05-15
KR1020140058603A KR102162437B1 (ko) 2014-05-15 2014-05-15 발광 소자 및 이를 포함하는 발광 소자 패키지

Publications (2)

Publication Number Publication Date
CN105098041A CN105098041A (zh) 2015-11-25
CN105098041B true CN105098041B (zh) 2019-11-12

Family

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Family Applications (1)

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CN201510005574.2A Active CN105098041B (zh) 2014-05-15 2015-01-06 发光器件和包括发光器件的发光器件封装

Country Status (5)

Country Link
US (1) US9368691B2 (enExample)
EP (1) EP2944862B1 (enExample)
JP (1) JP2015220456A (enExample)
KR (1) KR102162437B1 (enExample)
CN (1) CN105098041B (enExample)

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KR101646666B1 (ko) * 2015-03-26 2016-08-08 엘지이노텍 주식회사 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치
CN105226177B (zh) * 2015-10-13 2018-03-02 厦门市三安光电科技有限公司 倒装led芯片的共晶电极结构及倒装led芯片
DE102016101612A1 (de) * 2016-01-29 2017-08-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
WO2017135763A1 (ko) * 2016-02-05 2017-08-10 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지
KR102263041B1 (ko) * 2016-02-26 2021-06-09 삼성전자주식회사 멀티 컬러를 구현할 수 있는 발광 소자
US10756202B2 (en) * 2016-06-08 2020-08-25 Intel Corporation Quantum dot device packages
CN109417111B (zh) * 2016-06-20 2021-10-26 苏州乐琻半导体有限公司 半导体器件
KR102550007B1 (ko) * 2016-11-30 2023-07-03 서울바이오시스 주식회사 복수의 발광셀들을 가지는 발광 다이오드
KR20180073866A (ko) * 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102737500B1 (ko) * 2016-12-27 2024-12-04 삼성전자주식회사 발광소자 패키지
WO2018212630A1 (ko) * 2017-05-19 2018-11-22 엘지이노텍 주식회사 레이저 다이오드
US11705440B2 (en) * 2017-06-26 2023-07-18 PlayNitride Inc. Micro LED display panel
JP2019079979A (ja) * 2017-10-26 2019-05-23 豊田合成株式会社 半導体発光素子とその製造方法
CN110823845B (zh) * 2018-08-08 2021-05-25 京东方科技集团股份有限公司 光谱仪及其制作方法
US11508876B2 (en) * 2018-12-31 2022-11-22 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
JP6811293B1 (ja) 2019-08-21 2021-01-13 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
US12426410B2 (en) * 2019-08-28 2025-09-23 Tslc Corporation Semiconductor components and semiconductor structures and methods of fabrication
CN112687775B (zh) * 2019-10-18 2021-11-16 厦门三安光电有限公司 一种发光二极管
US20210296530A1 (en) * 2020-03-17 2021-09-23 Magna Electronics Inc. Vehicular display element comprising high density mini-pixel led array
US20230132771A1 (en) * 2020-03-18 2023-05-04 Lg Innotek Co., Ltd. Surface-emitting laser device and distance measurement device having same
CN113707036A (zh) * 2020-05-22 2021-11-26 北京芯海视界三维科技有限公司 发光模组、显示模组、显示屏及显示器
CN116964374A (zh) * 2021-03-12 2023-10-27 奥林巴斯医疗株式会社 光源装置
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KR20130079941A (ko) * 2012-01-03 2013-07-11 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치

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Also Published As

Publication number Publication date
EP2944862B1 (en) 2021-11-03
US20150333230A1 (en) 2015-11-19
EP2944862A1 (en) 2015-11-18
KR102162437B1 (ko) 2020-10-07
JP2015220456A (ja) 2015-12-07
US9368691B2 (en) 2016-06-14
CN105098041A (zh) 2015-11-25
KR20150131641A (ko) 2015-11-25

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Effective date of registration: 20210818

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China